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21. 发明授权

US07667236B2 Optimized contact design for thermosonic bonding of flip-chip devices 有权
标题翻译：优化的倒装芯片器件热键合接触设计
公开(公告)号：US07667236B2
公开(公告)日：2010-02-23
申请号：US10588473
申请日：2004-12-22
申请人： Ivan Eliashevich , Hari Venugopalan , Xiang Gao , Michael J. Sackrison
发明人： Ivan Eliashevich , Hari Venugopalan , Xiang Gao , Michael J. Sackrison
IPC分类号： H01L27/15
CPC分类号： H01L33/382 , H01L33/20 , H01L33/62 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2924/01079 , H01L2924/12041 , H01L2224/05599
摘要： A light emitting device (A) includes a semiconductor die (100). The semiconductor die includes: an epitaxial structure (120) arranged on a substrate (160), the epitaxial structure forming an active light generating region (140) between a first layer (120n) on a first side of the active region and having a first conductivity type, and a second layer (120p) on a second side of the active region and having a second conductivity type, the second side of the active region being opposite the first side of the active region and the second conductivity type being different that the first conductivity type; a first contact (180n) in operative electrical communication with the active region via the first layer in the epitaxial structure, the first contact being arranged on a side of the epitaxial structure opposite the substrate; a second contact (180p) in operative electrical communication with the active region via the second layer in the epitaxial structure, the second contact being arranged on a side of the epitaxial structure opposite the substrate; a first contact trace corresponding to the first contact and defined at a surface thereof distal from the substrate, the first trace including at least one area designated for bonding (320n); and, a second contact trace corresponding the second contact and defined at a surface thereof distal from the substrate, the second trace including at least one area (320p) designated for bonding. Suitably, the first contact trace is substantially enclosed within the second contact trace.
摘要翻译：发光器件（A）包括半导体管芯（100）。所述半导体管芯包括：布置在衬底（160）上的外延结构（120），所述外延结构在所述有源区的第一侧上的第一层（120n）之间形成有源光产生区（140），并且具有第一导电类型和在有源区的第二侧上的第二层（120p），并具有第二导电类型，有源区的第二面与有源区的第一侧相反，第二导电类型不同于第一导电类型; 通过外延结构中的第一层与有源区域电连通的第一接触（180n），第一接触件布置在与衬底相对的外延结构的一侧上; 通过外延结构中的第二层与有源区域电连通的第二触点（180p），第二触点布置在与衬底相对的外延结构的一侧上; 第一接触迹线对应于第一接触并限定在其远离基底的表面，第一迹线包括指定用于接合的至少一个区域（320n）; 以及对应于所述第二接触并限定在其远离所述衬底的表面的第二接触迹线，所述第二迹线包括指定用于接合的至少一个区域（320p）。适当地，第一接触迹线基本上封闭在第二接触迹线内。

22. 发明申请

US20070004088A1 Laser separation of encapsulated submount 审中-公开
标题翻译：激光分离封装的底座
公开(公告)号：US20070004088A1
公开(公告)日：2007-01-04
申请号：US11482363
申请日：2006-07-07
申请人： Michael Sackrison , Xiang Gao , Bryan Shelton , Ivan Eliashevich
发明人： Michael Sackrison , Xiang Gao , Bryan Shelton , Ivan Eliashevich
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , H01L21/78 , H01L2924/0002 , H01L2924/00
摘要： In a light emitting package fabrication process, a plurality of light emitting chips (10) are attached on a sub-mount wafer (14). The attached light emitting chips (10) are encapsulated. Fracture-initiating trenches (30, 32) are laser cut into the sub-mount wafer (14) between the attached light emitting chips (10) using a laser. The sub-mount wafer (14) is fractured along the fracture initiating trenches (30, 32).
摘要翻译：在发光封装制造工艺中，多个发光芯片（10）安装在子安装晶片（14）上。附着的发光芯片（10）被封装。使用激光将断裂引发沟槽（30,32）激光切割到附接的发光芯片（10）之间的子安装晶片（14）中。子安装晶片（14）沿断裂引发沟槽（30,32）断裂。

23. 发明授权

US07078319B2 Laser separated die with tapered sidewalls for improved light extraction 失效
标题翻译：具有锥形侧壁的激光分离模具，用于改进光提取
公开(公告)号：US07078319B2
公开(公告)日：2006-07-18
申请号：US10432081
申请日：2001-11-16
申请人： Ivan Eliashevich , Mark Gottfried
发明人： Ivan Eliashevich , Mark Gottfried
IPC分类号： H01L21/301 , H01L21/46 , H01L21/78
CPC分类号： H01L33/20 , B23K26/073 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/78 , H01L33/0095 , H01L2224/05568 , H01L2224/05573 , H01L2224/0558 , H01L2224/11 , H01L2924/10158 , Y10S438/948 , H01L2224/05644 , H01L2924/00014 , H01L2224/05666
摘要： A method for separating individual optoelectronic devices, such as LEDs, from a wafer includes directing a laser beam having a width toward a major surface of the semiconductor wafer. The laser beam has an image with a first portion of a first energy per unit width and a second portion of a second energy per unit width less than the first energy. The laser beam image cuts into the first major surface of the semiconductor wafer to produce individual devices.
摘要翻译：用于从晶片分离诸如LED的各个光电子器件的方法包括将具有宽度的激光束引向半导体晶片的主表面。激光束具有第一部分具有每单位宽度的第一能量的图像，并且具有小于第一能量的每单位宽度的第二能量的第二部分。激光束图像切入半导体晶片的第一主表面以产生单独的器件。

24. 发明申请

US20060030125A1 Laser separation of encapsulated submount 失效
公开(公告)号：US20060030125A1
公开(公告)日：2006-02-09
申请号：US10911052
申请日：2004-08-04
申请人： Michael Sackrison , Xiang Gao , Bryan Shelton , Ivan Eliashevich
发明人： Michael Sackrison , Xiang Gao , Bryan Shelton , Ivan Eliashevich
IPC分类号： H01L21/78
CPC分类号： H01L33/0095 , H01L21/78 , H01L2924/0002 , H01L2924/00
摘要： In a light emitting package fabrication process, a plurality of light emitting chips (10) are attached on a sub-mount wafer (14). The attached light emitting chips (10) are encapsulated. Fracture-initiating trenches (30, 32) are laser cut into the sub-mount wafer (14) between the attached light emitting chips (10) using a laser. The sub-mount wafer (14) is fractured along the fracture initiating trenches (30, 32).

25. 发明授权

US06653215B1 Contact to n-GaN with Au termination 有权
标题翻译：接触到具有Au终端的n-GaN
公开(公告)号：US06653215B1
公开(公告)日：2003-11-25
申请号：US09971965
申请日：2001-10-05
申请人： Michael G. Brown , Ivan Eliashevich , Keng Ouyang , Hari Venugopalan
发明人： Michael G. Brown , Ivan Eliashevich , Keng Ouyang , Hari Venugopalan
IPC分类号： H01L2128
CPC分类号： H01L33/38 , H01L2933/0016
摘要： A contact for n-type III-V semiconductor such as GaN and related nitride-based semiconductors is formed by depositing Al,Ti,Pt and Au in that order on the n-type semiconductor and annealing the resulting stack, desirably at about 400-600° C. for about 1-10 minutes. The resulting contact provides a low-resistance, ohmic contact to the semiconductor and excellent bonding to gold leads.
摘要翻译：通过在n型半导体上依次沉积Al，Ti，Pt和Au并且对所得到的叠层进行退火，最好在约400℃下，形成诸如GaN和相关氮化物基半导体的n型III-V半导体的触点， 600℃约1-10分钟。所得到的接触提供了对半导体的低电阻，欧姆接触和与金引线的极好接合。

26. 发明授权

US06642548B1 Light-emitting diodes with loop and strip electrodes and with wide medial sections 有权
标题翻译：具有环形和带状电极的发光二极管以及宽的中间部分
公开(公告)号：US06642548B1
公开(公告)日：2003-11-04
申请号：US09692953
申请日：2000-10-20
申请人： Michael G. Brown , Ivan Eliashevich , Louis A. Koszi
发明人： Michael G. Brown , Ivan Eliashevich , Louis A. Koszi
IPC分类号： H01L3300
CPC分类号： H01L33/38 , H01L33/20
摘要： Light emitting diodes such as those formed from gallium nitride based semiconductors are provided with electrode and pad structures which facilitate current spreading. The LED may be formed as a die with a lower contact surface and a mesa projecting upwardly from the lower contact surface. An electrode on the lower contact surface may be in the form of a ring substantially encircling the mesa. In other arrangements, the pad and/or electrode on the lower contact surface is disposed in an indentation on one edge of the mesa whereas the pad on the top of the mesa is disposed adjacent the opposite edge of the mesa.
摘要翻译：诸如由基于氮化镓的半导体形成的发光二极管设置有便于电流扩散的电极和焊盘结构。 LED可以形成为具有下接触表面的模具和从下接触表面向上突出的台面。下接触表面上的电极可以是基本上环绕台面的环的形式。在其他布置中，下接触表面上的焊盘和/或电极设置在台面的一个边缘上的凹陷中，而台面的顶部上的焊盘邻近台面的相对边缘设置。

27. 发明授权

US06413839B1 Semiconductor device separation using a patterned laser projection 有权
标题翻译：使用图案化激光投影的半导体器件分离
公开(公告)号：US06413839B1
公开(公告)日：2002-07-02
申请号：US09178287
申请日：1998-10-23
申请人： Michael G. Brown , Ivan Eliashevich , Mark Gottfried , Robert F. Karlicek, Jr. , James E. Nering
发明人： Michael G. Brown , Ivan Eliashevich , Mark Gottfried , Robert F. Karlicek, Jr. , James E. Nering
IPC分类号： H01L2146
CPC分类号： B23K26/0738 , B23K26/066 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/3043 , H01L21/6836 , H01L21/78 , H01L33/0095 , H01L2221/68327 , H01L2221/6834 , H01L2924/0002 , Y10S438/94 , H01L2924/00
摘要： A method for separating a semiconductor wafer into several thousand devices or dies by laser ablation. Semiconductor wafers are initially pre-processed to create multiple devices, such as blue LEDs, on the wafers. The wafers are then mounted with tape coated with a generally high level adhesive. The mounted wafer is then placed on a vacuum chuck (which is itself positioned on a computer controlled positioning table) to hold it in place during the cutting process. The cutting surface is then covered with a protective layer to prevent contamination from the effluent resulting from the actual cutting process. A laser beam is generated and passed through optical elements and masks to create a pattern, such as a line or multiple lines. The patterned laser projection is directed at the wafer at a substantially normal angle and applied to the wafer until at least a partial cut is achieved through it. A mechanical separation process completes the separation when only a partial cut is achieved by the patterned laser projection. The dies are then transferred to a grip ring for further processing.
摘要翻译：通过激光烧蚀将半导体晶片分离成数千个器件或管芯的方法。半导体晶片最初被预处理以在晶片上产生多个器件，例如蓝色LED。然后将晶片安装在涂有一般高水平粘合剂的胶带上。然后将安装的晶片放置在真空吸盘（其本身位于计算机控制的定位台上），以在切割过程中将其保持在适当位置。然后用保护层覆盖切割表面，以防止来自实际切割过程的流出物的污染。生成激光束并通过光学元件和掩模以产生图案，例如线或多条线。图案化的激光投影以基本上正常的角度指向晶片，并施加到晶片，直到通过它至少实现部分切割。当通过图案化的激光投影仅实现部分切割时，机械分离过程完成分离。然后将模具转移到握环以进一步处理。

28. 发明授权

US07456035B2 Flip chip light emitting diode devices having thinned or removed substrates 有权
标题翻译：倒装芯片发光二极管器件具有减薄或移除的衬底
公开(公告)号：US07456035B2
公开(公告)日：2008-11-25
申请号：US10899864
申请日：2004-07-27
申请人： Ivan Eliashevich , Boris Kolodin , Emil P. Stefanov
发明人： Ivan Eliashevich , Boris Kolodin , Emil P. Stefanov
IPC分类号： H01L21/00
CPC分类号： H01L25/0753 , H01L33/0079 , H01L33/62 , H01L2224/16 , H01L2224/48091 , H01L2924/00014
摘要： In a method for fabricating a flip-chip light emitting diode device, epitaxial layers (14, 114) are deposited on a growth substrate (16, 116) to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die (10, 110). The device die (10, 110) is flip chip bonded to a mount (12, 112). The flip chip bonding includes securing the device die (10, 110) to the mount (12, 112) by bonding at least one electrode (20, 22, 120) of the device die (10, 110) to at least one bonding pad (26, 28, 126) of the mount (12, 112). Subsequent to the flip chip bonding, a thickness of the growth substrate (16, 116) of the device die (10, 110) is reduced.
摘要翻译：在制造倒装芯片发光二极管器件的方法中，外延层（14,114）沉积在生长衬底（16,116）上以产生外延晶片。在外延晶片上制造多个发光二极管器件。切割外延晶片以产生器件管芯（10,110）。器件管芯（10,110）被倒装芯片结合到安装件（12,112）上。倒装芯片接合包括通过将器件管芯（10,110）的至少一个电极（20,22，120）粘合到至少一个焊盘（10,110）上来将器件管芯（10,110）固定到安装座（12,112）（12,112）的底部（26,28,126）。在倒装芯片接合之后，器件管芯（10,110）的生长衬底（16,116）的厚度减小。

29. 发明申请

US20070236956A1 Super bright LED power package 审中-公开
标题翻译：超亮LED电源包
公开(公告)号：US20070236956A1
公开(公告)日：2007-10-11
申请号：US11394895
申请日：2006-03-31
申请人： Boris Kolodin , Shawn Du , Emil Radkov , Mark Mayer , Ivan Eliashevich
发明人： Boris Kolodin , Shawn Du , Emil Radkov , Mark Mayer , Ivan Eliashevich
IPC分类号： G02B6/00 , F21V9/00
CPC分类号： G02B6/0008 , F21S41/00 , F21Y2115/10 , G02B3/00 , G02B6/04
摘要： At least two light emitting diodes emit a non-parallel light beam. A condensing system, operationally coupled with the light emitting diodes, receives the emitted non-parallel light beam and converts the received non-parallel light beam into a parallel light beam. A non-imaging concentrator includes an input surface which collects the parallel light beam, and an output surface, which includes phosphor material and outputs light.
摘要翻译：至少两个发光二极管发射非平行光束。与发光二极管可操作地耦合的冷凝系统接收所发射的非平行光束并将接收到的非平行光束转换为平行光束。非成像集中器包括收集平行光束的输入表面和包括磷光体材料并输出光的输出表面。

30. 发明申请

US20050263854A1 Thick laser-scribed GaN-on-sapphire optoelectronic devices 审中-公开
标题翻译：厚激光刻划蓝宝石蓝宝石光电器件
公开(公告)号：US20050263854A1
公开(公告)日：2005-12-01
申请号：US11123796
申请日：2005-05-06
申请人： Bryan Shelton , Hari Venugopalan , Sebastien Libon , Ivan Eliashevich
发明人： Bryan Shelton , Hari Venugopalan , Sebastien Libon , Ivan Eliashevich
IPC分类号： B23K26/40 , H01L21/461 , H01L21/78 , H01L29/20 , H01L33/00
CPC分类号： H01L33/0095 , B23K26/40 , B23K2103/50 , H01L21/78
摘要： A sapphire wafer having a thickness greater than 125 microns and having devices disposed thereon is laser scribed to form a grid array pattern of laser scribe lines laser scribed into the sapphire wafer. The sapphire wafer is separated along the laser scribe lines to separate a plurality of device dice defined by the grid array pattern of laser scribe lines. Each device die includes (i) a device and (ii) a portion of the sapphire wafer having the thickness greater than 125 microns. In some embodiments, a GaN LED device die includes a GaN based LED device, and a sapphire substrate supporting the GaN based LED device. The sapphire substrate has: (i) a thickness greater than 125 microns effective for increased light extraction due to a lower critical angle for total internal reflection; and (ii) sides generated by laser scribing.
摘要翻译：激光刻划厚度大于125微米并具有设置在其上的器件的蓝宝石晶片，以形成激光刻划到蓝宝石晶片中的激光划线的栅格阵列图案。沿着激光划线分离蓝宝石晶片以分离由激光划线的栅格阵列图案限定的多个器件裸片。每个器件裸片包括（i）器件和（ii）蓝宝石晶片的厚度大于125微米的部分。在一些实施例中，GaN LED器件管芯包括GaN基LED器件和支撑GaN基LED器件的蓝宝石衬底。蓝宝石衬底具有：（i）厚度大于125微米，对于增加光提取有效，由于全内反射的临界角较小; 和（ii）通过激光划线产生的边。

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