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    • 24. 发明授权
    • Array substrate for use in LCD device and method of fabricating same
    • 用于LCD装置的阵列基板及其制造方法
    • US06627470B2
    • 2003-09-30
    • US09779438
    • 2001-02-09
    • Soon-Sung YooDong-Yeung KwakHu-Sung KimYu-Ho JungYong-Wan KimDuk-Jin ParkWoo-Chae Lee
    • Soon-Sung YooDong-Yeung KwakHu-Sung KimYu-Ho JungYong-Wan KimDuk-Jin ParkWoo-Chae Lee
    • H01L2100
    • H01L29/66765G02F1/1368H01L27/12H01L27/124H01L27/1248H01L29/78669
    • A TFT array substrate has a PAI pattern, and the PAI pattern has an over-etched portion of the pure amorphous silicon layer. This over-etched portion prevents a short between the pixel electrode and the pure amorphous silicon layer (i.e., the active layer). The over-etched portion also enables the aperture ratio to increase. a gate line over a said substrate; a data line over the said substrate being perpendicular to the gate line; a passivation layer covering the data line, the passivation layer divided into a residual passivation layer and a etched passivation layer; a doped amorphous silicon layer formed under the data line and corresponding in size to the data line; a pure amorphous silicon layer formed under the doped amorphous silicon layer and having a over-etched portion in the peripheral portions, wherein the over-etched portion is over-etched from the edges of the residual passivation layer toward the inner side; an insulator layer under the pure amorphous silicon layer; a TFT formed near the crossing of the gate line and the data line; and a pixel electrode overlapping the data line and contacting the TFT.
    • TFT阵列基板具有PAI图案,并且PAI图案具有纯非晶硅层的过蚀刻部分。 该过蚀刻部分防止像素电极和纯非晶硅层(即有源层)之间的短路。 过蚀刻部分还使孔径比增加。 在所述衬底上的栅极线; 所述衬底上的数据线垂直于所述栅极线; 覆盖数据线的钝化层,钝化层分为残留钝化层和蚀刻钝化层; 形成在数据线之下且与数据线大小对应的掺杂非晶硅层; 形成在掺杂非晶硅层下面并且在周边部分中具有过蚀刻部分的纯非晶硅层,其中过蚀刻部分从残余钝化层的边缘向内侧被过度蚀刻; 在纯非晶硅层下面的绝缘体层; 形成在栅极线和数据线的交叉点附近的TFT; 以及与数据线重叠并与TFT接触的像素电极。
    • 25. 发明申请
    • Switchable 3-Dimensional Conversion Device, Method for Manufacturing the Same and Stereoscopic Image Display Device Using the Same
    • 可切换三维转换装置及其制造方法及使用其的立体图像显示装置
    • US20120001890A1
    • 2012-01-05
    • US13174969
    • 2011-07-01
    • Yun-Ho KOOKSoon-Sung YooChul-Ho KimHee-Jin Im
    • Yun-Ho KOOKSoon-Sung YooChul-Ho KimHee-Jin Im
    • G09G3/36C23F1/00G06F3/038
    • G02B27/26G02B27/2214G02F1/13394G02F1/29G02F2001/294
    • The present invention is for a switchable 3-dimensional conversion device having a spacer stably formed at a predetermined height by imprinting, a manufacturing method thereof and a stereoscopic image display device using the same, the method includes: providing a first electrode on an inner surface of a first substrate; applying a resin material to the first electrode to a predetermined thickness; placing a mold structure which has a concave part formed with a predetermined depth thereon, on the resin material; stamping the resin material using the mold structure, in order to form a spacer pattern; dry etching the spacer pattern to form a spacer; forming a plurality of second electrodes, which are spaced from one another and have longitudinal axes in one direction, respectively, on a second substrate; and arranging the first and second substrates opposite to each other, bonding the same, and forming a liquid crystal layer between the first and second substrates.
    • 本发明涉及一种可切换的三维转换装置,其具有通过压印而以预定高度稳定地形成的间隔件,其制造方法和使用其的立体图像显示装置,该方法包括:在内表面上提供第一电极 的第一衬底; 将树脂材料施加到所述第一电极至预定厚度; 在所述树脂材料上放置具有在其上形成有预定深度的凹部的模具结构; 使用模具结构冲压树脂材料,以形成间隔图案; 干蚀刻间隔图案以形成间隔物; 形成多个第二电极,所述多个第二电极彼此间隔开,并且在第二基板上分别具有在一个方向上的纵向轴线; 并且将第一和第二基板彼此相对布置,将其接合,并且在第一和第二基板之间形成液晶层。
    • 29. 发明授权
    • Array substrate for a liquid crystal display and method for fabricating thereof
    • 液晶显示器用阵列基板及其制造方法
    • US06906760B2
    • 2005-06-14
    • US09917861
    • 2001-07-31
    • Soon-Sung YooDong-Yeung KwakHu-Sung KimYu-Ho JungYong-Wan KimDuk-Jin ParkWoo-Chae Lee
    • Soon-Sung YooDong-Yeung KwakHu-Sung KimYu-Ho JungYong-Wan KimDuk-Jin ParkWoo-Chae Lee
    • G02F1/1333G02F1/1362G02F1/136
    • G02F1/136286G02F2001/136263
    • A liquid crystal display device includes a substrate, a thin film transistor disposed on the substrate, the thin film transistor including a gate electrode, a source electrode and a drain electrode, a gate line arranged in a first direction on the substrate, the gate line connected with the gate electrode of the thin film transistor, a gate insulation layer disposed on the substrate and covering the gate line and the gate electrode of the thin film transistor, an intrinsic semiconductor layer disposed on the gate insulation layer, an extrinsic semiconductor layer disposed on the intrinsic semiconductor layer, a data line arranged in a second direction substantially perpendicular to the first direction disposed on the extrinsic semiconductor layer, the data line connected to the source electrode of the thin film transistor, first and second dummy metal layers formed over the gate line and arranged on opposite sides of the data line, a passivation layer covering the data line, the source electrode, the drain electrode and the first and second dummy metal layers, and a pixel electrode located at a pixel region defined by an intersection of the gate line and the data line, the pixel electrode contacting the drain electrode of the thin film transistor.
    • 液晶显示装置包括基板,设置在基板上的薄膜晶体管,薄膜晶体管,其包括栅电极,源电极和漏电极,在基板上沿第一方向排列的栅极线,栅极线 与所述薄膜晶体管的栅电极连接,栅极绝缘层,设置在所述基板上并覆盖所述薄膜晶体管的栅极线和栅极,设置在所述栅极绝缘层上的本征半导体层,设置在所述栅极绝缘层上的外部半导体层 在本征半导体层上,沿与第二方向大致垂直的第二方向布置在非本征半导体层上的数据线,与薄膜晶体管的源极连接的数据线,形成在该半导体层上的第一和第二虚设金属层 栅极线并布置在数据线的相对侧,覆盖数据线的钝化层,源极 电极,漏电极和第一和第二虚拟金属层,以及位于由栅极线和数据线的交点限定的像素区域的像素电极,该像素电极与薄膜晶体管的漏电极接触。
    • 30. 发明授权
    • Liquid crystal display device and method of manufacturing the same
    • 液晶显示装置及其制造方法
    • US06862051B2
    • 2005-03-01
    • US10397261
    • 2003-03-27
    • Byung-Chul AhnSoon-Sung YooYong-Wan Kim
    • Byung-Chul AhnSoon-Sung YooYong-Wan Kim
    • G02F1/136G02F1/1362
    • G02F1/13458G02F1/136213G02F1/136227
    • A liquid crystal display, and a method of manufacturing thereof, includes providing a substrate; depositing sequentially a first metal layer and a first insulating layer on the substrate; patterning the first metal layer and the first insulating layer using a first mask to form a gate line and a first gate insulating layer; depositing sequentially a second gate insulating layer, a pure semiconductor layer, a doped semiconductor layer and a second metal layer over the whole substrate; patterning the second metal layer using a second mask to form a data line, source and drain electrodes, a capacitor electrode, the capacitor electrode overlapping a portion of the gae line; etching the doped semiconductor layer between the source and drain electrodes to form a channel region; depositing a third insulating layer over the whole substrate; patterning the third insulating layer using a third mask to form a passivation film, the passivation film having a smaller width than the data line and covering the source and drain electrodes and exposing a portion of the drain electrode and the capacitor electrode; depositing a transparent conductive material layer over the whole substrate; and patterning the transparent conductive material layer using a fourth mask to pixel electrode, the pixel electrode contacting the drain electrode.
    • 液晶显示器及其制造方法包括提供基板; 在基板上依次沉积第一金属层和第一绝缘层; 使用第一掩模对第一金属层和第一绝缘层进行构图以形成栅极线和第一栅极绝缘层; 在整个衬底上依次沉积第二栅绝缘层,纯半导体层,掺杂半导体层和第二金属层; 使用第二掩模图案化第二金属层以形成数据线,源极和漏极,电容器电极,电容器电极与gae线的一部分重叠; 蚀刻源极和漏极之间的掺杂半导体层以形成沟道区; 在整个衬底上沉积第三绝缘层; 使用第三掩模对第三绝缘层进行图案化以形成钝化膜,所述钝化膜具有比所述数据线更小的宽度并且覆盖所述源电极和漏电极并暴露所述漏电极和所述电容器电极的一部分; 在整个基板上沉积透明导电材料层; 以及使用第四掩模到像素电极对所述透明导电材料层进行图案化,所述像素电极与所述漏极接触。