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    • 23. 发明授权
    • Aluminum sputtering while biasing wafer
    • 铝溅射同时偏置晶圆
    • US07378002B2
    • 2008-05-27
    • US11209328
    • 2005-08-23
    • Wei Ti LeeTed GuoSang-Ho Yu
    • Wei Ti LeeTed GuoSang-Ho Yu
    • C23C14/35H01L21/44
    • C23C14/185C23C14/025C23C14/046C23C14/345
    • An aluminum sputtering process including RF biasing the wafer and a two-step aluminum fill process and apparatus used therefor to fill aluminum into a narrow via hole by sputtering under two distinctly different conditions, preferably in two different plasma sputter reactors. The first step includes sputtering a high fraction of ionized aluminum atoms onto a relatively cold wafer, e.g., held at less than 150° C., and relatively highly biased to attract aluminum atoms into the narrow holes and etch overhangs. The second step includes more neutral sputtering onto a relatively warm wafer, e.g. held at greater than 250° C., and substantially unbiased to provide a more isotropic and uniform aluminum flux. The magnetron scanned about the back of the aluminum target may be relatively small and unbalanced in the first step and relatively large and balanced in the second.
    • 一种铝溅射工艺,包括RF偏置晶片和两步铝填充工艺和装置,用于在两个明显不同的条件下,优选在两个不同的等离子体溅射反应器中通过溅射将铝填充到窄通孔中。 第一步包括将大部分电离铝原子溅射到相对冷的晶片上,例如保持在小于150℃,并且相当高的偏压以将铝原子吸引到窄孔中并蚀刻突出端。 第二步包括在相对温暖的晶片上的更中性的溅射,例如 保持在大于250℃,并且基本上无偏差以提供更多的各向同性和均匀的铝通量。 围绕铝靶的背面扫描的磁控管可能在第一步骤中相对较小并且不平衡,而在第二步中相对较大且平衡。
    • 25. 发明授权
    • Staged aluminum deposition process for filling vias
    • 分阶段铝沉积工艺用于填充过孔
    • US06352620B2
    • 2002-03-05
    • US09340977
    • 1999-06-28
    • Sang-Ho YuYonghwa Chris ChaMurali AbburiShri SinghviFufa Chen
    • Sang-Ho YuYonghwa Chris ChaMurali AbburiShri SinghviFufa Chen
    • C23L1434
    • H01L21/76882
    • The present invention is a semiconductor metallization process for providing complete via fill on a substrate and a planar metal surface, wherein the vias are free of voids and the metal surface is free of grooves. In one aspect of the invention, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A PVD metal layer, such as PVD Al or PVD Cu, is then deposited onto the refractory layer at a pressure below about 1 milliTorr to provide a conformal PVD metal layer. Then the vias or contacts are filled with metal, such as by reflowing additional metal deposited by physical vapor deposition on the conformal PVD metal layer. The process is preferably carried out in an integrated processing system that includes a long throw PVD chamber, wherein a target and a substrate are separated by a long throw distance of at least 100 mm, and a hot metal PVD chamber that also serves as a reflow chamber.
    • 本发明是用于在基板和平面金属表面上提供完整的通孔填充的半导体金属化工艺,其中通孔没有空隙,并且金属表面没有凹槽。 在本发明的一个方面中,将耐火层沉积在具有高比例接触或在其上形成的通孔的基底上。 然后将PVD金属层(例如PVD Al或PVD Cu)以低于约1毫乇的压力沉积在耐火层上,以提供保形PVD金属层。 然后,通孔或触点填充金属,例如通过在保形PVD金属层上物理气相沉积沉积的附加金属回流。 该方法优选在包括长投影PVD室的集成处理系统中进行,其中靶和衬底以至少100mm的长距离距离分开,以及也用作回流的热金属PVD室 房间。