专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20110135824A1 Electroless Deposition System 审中-公开
标题翻译：无电沉积系统
公开(公告)号：US20110135824A1
公开(公告)日：2011-06-09
申请号：US13028607
申请日：2011-02-16
申请人： Ron Rulkens , Robert D. Tas , Shashank Ravindra Kulkarni , Artur Kolics , Nancy E. Gilbert
发明人： Ron Rulkens , Robert D. Tas , Shashank Ravindra Kulkarni , Artur Kolics , Nancy E. Gilbert
IPC分类号： B05D1/18 , B05D5/00
CPC分类号： C23C18/1682 , C23C18/1617 , C23C18/1619 , H05K3/187
摘要： An electroless deposition method includes providing a deposition solution, and saturating the deposition solution with an oxygen concentration in a range from about two thousand parts per million to about twenty thousand parts per million, and replenishing deionized water in the deposition solution.
摘要翻译：无电解沉积方法包括提供沉积溶液，并使沉积溶液饱和在约百万分之几到百万分之一的范围内的氧浓度，并在沉积溶液中补充去离子水。

22. 发明授权

US07913644B2 Electroless deposition system 有权
标题翻译：无电沉积系统
公开(公告)号：US07913644B2
公开(公告)日：2011-03-29
申请号：US11537643
申请日：2006-09-30
申请人： Ron Rulkens , Robert D. Tas , Shashank Ravindra Kulkarni , Artur Kolics , Nancy E. Gilbert
发明人： Ron Rulkens , Robert D. Tas , Shashank Ravindra Kulkarni , Artur Kolics , Nancy E. Gilbert
IPC分类号： B05C3/02
CPC分类号： C23C18/1682 , C23C18/1617 , C23C18/1619 , H05K3/187
摘要： An electroless deposition system includes a deposition solution, and saturating the deposition solution with an oxygen concentration in a range from about two thousand parts per million to about twenty thousand parts per million.
摘要翻译：无电解沉积系统包括沉积溶液，并使沉积溶液饱和，氧浓度在约百万分之几到百万分之一的范围内。

23. 发明申请

US20070287277A1 SEMICONDUCTOR SYSTEM WITH SURFACE MODIFICATION 有权
标题翻译：具有表面改性的半导体系统
公开(公告)号：US20070287277A1
公开(公告)日：2007-12-13
申请号：US11760722
申请日：2007-06-08
申请人： Artur Kolics , Nanhai Li , Marina Polyanskaya , Mark Weise , Jason Corneille
发明人： Artur Kolics , Nanhai Li , Marina Polyanskaya , Mark Weise , Jason Corneille
IPC分类号： H01L21/44
CPC分类号： H01L21/76861 , B08B3/04 , C11D7/08 , C11D7/22 , C11D7/32 , H01L21/31053 , H01L21/76829 , H01L21/76838 , H01L21/76849 , H01L21/76862 , H01L21/76864
摘要： A semiconductor system includes: providing a dielectric layer; providing a conductor in the dielectric layer, the conductor exposed at the top of the dielectric layer; capping the exposed conductor; and modifying the surface of the dielectric layer, modifying the surface of the dielectric layer, wherein modifying the surface includes cleaning conductor ions from the dielectric layer by dissolving the conductor in a low pH solution, dissolving the dielectric layer under the conductor ions, mechanically enhanced cleaning, or chemisorbing a hydrophobic layer on the dielectric layer.
摘要翻译：半导体系统包括：提供电介质层; 在所述电介质层中提供导体，所述导体暴露于所述电介质层的顶部; 盖住暴露的导体; 并且改变介电层的表面，改变介电层的表面，其中改性表面包括通过将导体溶解在低pH溶液中来清洁介电层的导体离子，将介电层溶解在导体离子之下，机械增强清洁或化学吸附介电层上的疏水层。

24. 发明授权

US06908512B2 Temperature-controlled substrate holder for processing in fluids 有权
标题翻译：用于在流体中加工的温度控制的基板支架
公开(公告)号：US06908512B2
公开(公告)日：2005-06-21
申请号：US10247895
申请日：2002-09-20
申请人： Igor C. Ivanov , Jonathan Weiguo Zhang , Artur Kolics
发明人： Igor C. Ivanov , Jonathan Weiguo Zhang , Artur Kolics
IPC分类号： B24B37/30 , B24B49/14 , C23C18/16 , H01L21/00 , H01L21/288 , H01L21/687 , G05C13/00
CPC分类号： C23C18/163 , B24B37/30 , B24B49/14 , C23C18/1678 , H01L21/288 , H01L21/2885 , H01L21/67248 , H01L21/68785
摘要： A substrate holder has a disk-like body with a central recess having diameter smaller than the diameter of the substrate placed onto the upper surface of the holder. The substrate can be clamped in place by the clamps of the edge-grip mechanism or placed into a seat without the use of clamps. In both cases, the substrate forms a partial wall that confines the heating/cooling recess or chamber. The aforementioned recess is filled with a cooling or heating liquid (depending on the mode of metal deposition) selectively supplied from a liquid heating or cooling system. In order to ensure in the working chamber above the substrate a pressure slightly higher than the pressure in the cooling/heating recess, the working chamber is first filled with the working solution under the atmospheric pressure, and then the recess is filled with a heating or cooling liquid with simultaneous increase of pressure in the working chamber to a level slightly exceeding the pressure in the recess. The substrate holder of the invention provides direct heat/cool-exchange between the heating/cooling medium and the substrate and allows instantaneous change of temperature of the heating/cooling liquid.
摘要翻译：衬底保持器具有盘状体，其具有直径小于放置在保持器的上表面上的衬底的直径的中心凹部。基板可以通过边缘抓握机构的夹具夹紧就位，或者不使用夹具而放置在座中。在这两种情况下，基板形成限制加热/冷却凹部或室的局部壁。上述凹部填充有从液体加热或冷却系统选择性地供应的冷却或加热液体（取决于金属沉积的模式）。为了确保在基板上方的工作室内的压力略高于冷却/加热凹槽中的压力，工作室首先在大气压力下被工作溶液填充，然后用加热或冷却液体，同时将工作室中的压力提高到稍微超过凹部中的压力的水平。本发明的衬底保持器在加热/冷却介质和衬底之间提供直接的热/冷交换，并且允许加热/冷却液体的温度的瞬时变化。

25. 发明授权

US08632628B2 Solutions and methods for metal deposition 有权
标题翻译：金属沉积的方法和方法
公开(公告)号：US08632628B2
公开(公告)日：2014-01-21
申请号：US12916427
申请日：2010-10-29
申请人： Artur Kolics
发明人： Artur Kolics
IPC分类号： C23C18/31 , C23C18/32 , C23C18/34 , C23C18/36 , C23C18/38 , C23C18/40 , C23C18/42 , C23C18/44
CPC分类号： H01B1/02 , C23C18/31 , C23C18/32 , C23C18/36 , C23C18/48 , C23C18/50
摘要： One aspect of the present invention is a deposition solution to deposit metals and metal alloys such as for fabrication of electronic devices. According to one embodiment, the deposition solution comprises metal ions and a pH adjustor. The pH adjustor comprises a functional group having a general formula (R1R2N)(R3R4N)C═N—R5 where: N is nitrogen; C is carbon; and R1, R2, R3, R4, and R5 are the same or different and represent hydrogen, alkyl group, aryl group, or alkylaryl group. Another aspect of the presented invention is a method of preparing deposition solutions. Still another aspect of the present invention is a method of fabricating electronic devices.
摘要翻译：本发明的一个方面是沉积诸如用于制造电子器件的金属和金属合金的沉积溶液。根据一个实施方案，沉积溶液包含金属离子和pH调节剂。 pH调节剂包括具有通式（R 1 R 2 N）（R 3 R 4 N）C = N-R 5的官能团，其中：N是氮; C是碳; 并且R 1，R 2，R 3，R 4和R 5相同或不同，表示氢，烷基，芳基或烷基芳基。本发明的另一方面是制备沉积溶液的方法。本发明的另一方面是制造电子器件的方法。

26. 发明授权

US08518815B2 Methods, devices, and materials for metallization 有权
标题翻译：用于金属化的方法，装置和材料
公开(公告)号：US08518815B2
公开(公告)日：2013-08-27
申请号：US12832034
申请日：2010-07-07
申请人： Artur Kolics , William T. Lee , Fritz Redeker
发明人： Artur Kolics , William T. Lee , Fritz Redeker
IPC分类号： H01L21/44
CPC分类号： H01L24/04 , H01L21/76849 , H01L23/481 , H01L24/03 , H01L24/05 , H01L2224/03464 , H01L2224/0401 , H01L2224/05026 , H01L2224/05099 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05571 , H01L2224/05573 , H01L2224/05599 , H01L2224/05611 , H01L2224/05639 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/05666 , H01L2224/13 , H01L2224/13023 , H01L2224/13025 , H01L2224/13099 , H01L2224/131 , H01L2224/13599 , H01L2224/29099 , H01L2224/29599 , H01L2924/00012 , H01L2924/00013 , H01L2924/00014 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/014 , H01L2924/14 , H01L2224/05552 , H01L2924/00
摘要： A method of making an electronic device which in one embodiment comprises providing a substrate, electrolessly depositing a barrier metal at least on portions of the substrate, and using wet chemistry such as electroless deposition to deposit a substantially gold-free wetting layer having solder wettability onto the barrier metal. An electronic device which in one embodiment comprises a metallization stack. The metallization stack comprises a barrier metal deposited electrolessly and a substantially gold-free wetting layer deposited on the barrier metal, and the wetting layer is wettable by solder.
摘要翻译：一种制造电子器件的方法，其在一个实施例中包括提供衬底，至少在衬底的一部分上无电沉积阻挡金属，并且使用湿化学如无电镀沉积将具有焊料润湿性的基本上无金的润湿层沉积到屏障金属。在一个实施例中的电子设备包括金属化堆叠。金属化堆叠包括无电沉积的阻挡金属和沉积在阻挡金属上的基本无金的润湿层，并且润湿层可被焊料润湿。

27. 发明申请

US20130078808A1 ELECTROLESS DEPOSITION SOLUTIONS AND PROCESS CONTROL 审中-公开
标题翻译：电沉积解决方案和工艺控制
公开(公告)号：US20130078808A1
公开(公告)日：2013-03-28
申请号：US13681332
申请日：2012-11-19
申请人： Artur Kolics
发明人： Artur Kolics
IPC分类号： H01L21/02 , C09D5/24
CPC分类号： H01L21/02697 , C09D5/24 , C23C18/1601 , C23C18/1617 , C23C18/34 , C23C18/50 , H01L21/288 , H01L21/76849 , H05K3/244
摘要： One embodiment of the present invention is a method of electroless deposition of cap layers for fabricating an integrated circuit. The method includes controlling the composition of an electroless deposition bath so as to substantially maintain the electroless deposition properties of the bath. Other embodiments of the present invention include electroless deposition solutions. Still another embodiment of the present invention is a composition used to recondition an electroless deposition bath.
摘要翻译：本发明的一个实施例是用于制造集成电路的盖层的无电沉积方法。该方法包括控制无电沉积浴的组成，以便基本保持浴的无电沉积性能。本发明的其它实施方案包括无电沉积溶液。本发明的另一个实施方案是用于重新形成无电沉积浴的组合物。

28. 发明申请

US20120213914A1 Apparatus and Method for Electroless Deposition of Materials on Semiconductor Substrates 有权
标题翻译：半导体衬底上材料的无电沉积的装置和方法
公开(公告)号：US20120213914A1
公开(公告)日：2012-08-23
申请号：US13408039
申请日：2012-02-29
申请人： Igor C. Ivanov , Jonathan Weiguo Zhang , Artur Kolics
发明人： Igor C. Ivanov , Jonathan Weiguo Zhang , Artur Kolics
IPC分类号： B05D5/12
CPC分类号： C23C18/1676 , C23C18/1628 , C23C18/163 , C23C18/1632 , C23C18/168 , C23C18/1682 , H01L21/288
摘要： An apparatus is provided having a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus also includes a solution heater and a control system for controlling temperature and pressure in the chamber. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.
摘要翻译：提供一种装置，其具有能够被密封并且能够承受增加的压力和高温的可关闭室。该室具有用于供应各种处理液体的多个入口，例如沉积溶液，用于冲洗的水等，以及用于在压力下供应气体的端口。该装置还包括解决方案加热器和用于控制室内的温度和压力的控制系统。通过在压力下和稍低于溶液沸点的温度下进行沉积工艺来实现均匀沉积。该解决方案可以从上面通过形成在盖中的淋浴喷头或者通过室的底部供应。冲洗或其它辅助溶液经由可平行于其上的衬底上方的可径向移动的化学分配臂供应。

29. 发明申请

US20120013008A1 METALLIZATION PROCESSES, MIXTURES, AND ELECTRONIC DEVICES 有权
标题翻译：金属化工艺，混合物和电子器件
公开(公告)号：US20120013008A1
公开(公告)日：2012-01-19
申请号：US12835534
申请日：2010-07-13
申请人： Artur Kolics , Fritz Redeker
发明人： Artur Kolics , Fritz Redeker
IPC分类号： H01L23/532 , C25D15/00
CPC分类号： H05K1/09 , C23C18/1607 , C23C18/1662 , C23C18/1834 , C23C18/1844 , C23C18/31 , C23C18/40 , C23C18/50 , C23C18/52 , C25D3/12 , C25D3/20 , C25D3/22 , C25D3/30 , C25D3/38 , C25D3/46 , C25D3/48 , C25D3/50 , C25D3/54 , C25D3/562 , C25D5/02 , C25D7/123 , C25D15/00 , H01L21/288 , H01L21/2885 , H01L21/76877 , H01L21/76898 , H01L23/53209 , H01L23/53238 , H01L23/53252 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： One aspect of the present invention is a method of processing a substrate. In one embodiment, the method comprises forming an electrical conductor on or in the substrate by providing a mixture comprising metal particles and an electroless deposition solution and electrolessly depositing a metal matrix and co-depositing the metal particles. In another embodiment, the method comprises forming an electrical conductor on or in the substrate by providing a mixture comprising metal particles and an electrochemical plating solution and electrochemically plating a metal matrix and co-depositing the metal particles. Another aspect of the present invention is a mixture for the formation of an electrical conductor on or in a substrate. Another aspect of the present invention is an electronic device.
摘要翻译：本发明的一个方面是一种处理衬底的方法。在一个实施方案中，该方法包括通过提供包含金属颗粒和无电镀沉积溶液的混合物和无电沉积金属基质并共沉积金属颗粒在基底上或基底上形成电导体。在另一个实施方案中，该方法包括通过提供包含金属颗粒和电化学电镀溶液的混合物以及电化学镀金属基质并共沉积金属颗粒在基底上或基底上形成电导体。本发明的另一方面是用于在基底上或基底中形成电导体的混合物。本发明的另一方面是电子设备。

30. 发明申请

US20110143553A1 INTEGRATED TOOL SETS AND PROCESS TO KEEP SUBSTRATE SURFACE WET DURING PLATING AND CLEAN IN FABRICATION OF ADVANCED NANO-ELECTRONIC DEVICES 审中-公开
标题翻译：综合工具集和工艺在高级纳米电子设备制造过程中保护基底表面湿润清洗和清洁
公开(公告)号：US20110143553A1
公开(公告)日：2011-06-16
申请号：US12965765
申请日：2010-12-10
申请人： Yaxin Wang , Shijian Li , Fritz Redeker , John Parks , Artur Kolics , Hyungsuk Alexander Yoon , Tarek Suwwan de Felipe , Mikhail Korolik
发明人： Yaxin Wang , Shijian Li , Fritz Redeker , John Parks , Artur Kolics , Hyungsuk Alexander Yoon , Tarek Suwwan de Felipe , Mikhail Korolik
IPC分类号： H01L21/469 , B05C3/02 , B05C11/00 , B05C11/02
CPC分类号： H01L21/288 , C23C18/1642 , C23C18/1689 , C23C18/1872 , H01L21/76849
摘要： Methods and systems for handling a substrate through processes including an integrated electroless deposition process includes processing a surface of the substrate in an electroless deposition module to deposit a layer over conductive features of the substrate using a deposition fluid. The surface of the substrate is then rinsed in the electroless deposition module with a rinsing fluid. The rinsing is controlled to prevent de-wetting of the surface so that a transfer film defined from the rinsing fluid remains coated over the surface of the substrate. The substrate is removed from the electroless deposition module while maintaining the transfer film over the surface of the substrate. The transfer film over the surface of the substrate prevents drying of the surface of the substrate so that the removing is wet. The substrate, once removed from the electroless deposition module, is moved into a post-deposition module while maintaining the transfer film over the surface of the substrate.
摘要翻译：用于通过包括集成无电沉积工艺的工艺处理衬底的方法和系统包括在无电沉积模块中处理衬底的表面以使用沉积流体在衬底的导电特征上沉积层。然后用清洗液在无电沉积模块中冲洗基材的表面。控制冲洗以防止表面的脱湿，使得从冲洗流体限定的转印膜保持涂覆在基材的表面上。将基底从无电沉积模块移除，同时将转印膜保持在衬底的表面上。衬底表面上的转印膜防止了衬底表面的干燥，使得去除被弄湿。一旦从无电镀沉积模块中取出的衬底被移动到后沉积模块中，同时将转印膜保持在衬底的表面上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式