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21. 发明申请

US20100321991A1 Chalcogenide Devices Exhibiting Stable Operation from the As-Fabricated State 审中-公开
标题翻译：从制造国展示稳定运行的硫族化物装置
公开(公告)号：US20100321991A1
公开(公告)日：2010-12-23
申请号：US12871975
申请日：2010-08-31
申请人： Sergey A. Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
发明人： Sergey A. Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
IPC分类号： G11C11/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： A chalcogenide material and chalcogenide memory device having less stringent requirements for formation, improved thermal stability and/or faster operation. The chalcogenide materials include materials comprising Ge, Sb and Te in which the Ge and/or Te content is lean relative to the commonly used Ge2Sb2Te5 chalcogenide composition. Electrical devices containing the instant chalcogenide materials show a rapid convergence of the set resistance during cycles of setting and resetting the device from its as-fabricated state, thus leading to a reduced or eliminated need to subject the device to post-fabrication electrical formation prior to end-use operation. Improved thermal stability is manifested in terms of prolonged stability of the resistance of the device at elevated temperatures, which leads to an inhibition of thermally induced setting of the reset state in the device. Significant improvements in the 10 year data retention temperature are demonstrated. Faster device operation is achieved through an increased speed of crystallization, which acts to shorten the time required to transform the chalcogenide material from its reset state to its set state in an electrical memory device.
摘要翻译：一种硫族化物材料和硫族化物记忆装置，其对形成，改进的热稳定性和/或更快的操作要求不太严格。硫属化物材料包括Ge，Sb和Te的材料，其中Ge和/或Te含量相对于通常使用的Ge 2 Sb 2 Te 5硫族化物组合物是稀的。包含瞬时硫族化物材料的电气装置显示设定循环期间的设定电阻的快速收敛以及将器件从其制造状态复位，从而导致减少或消除了将器件置于后制造电形成之前最终使用操作。改进的热稳定性表现在器件在升高的温度下的电阻的延长的稳定性，这导致抑制器件中复位状态的热诱导设置。展示了10年数据保存温度的显着改进。通过提高结晶速度实现更快的器件操作，其用于缩短将硫族化物材料从其复位状态转换到其在电存储器件中的设定状态所需的时间。

22. 发明申请

US20090109737A1 Method of restoring variable resistance memory device 有权
标题翻译：可变电阻存储器件的恢复方法
公开(公告)号：US20090109737A1
公开(公告)日：2009-04-30
申请号：US11981343
申请日：2007-10-31
申请人： Sergey A. Kostylev
发明人： Sergey A. Kostylev
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C13/0033 , G11C16/3431 , G11C2013/0073
摘要： Methods of programming a phase-change memory device that remedy device failure. The methods includes applying a sequence of two or more electrical energy pulses to the device, where the sequence of pulses includes positive polarity pulses and negative polarity pulses. In one method, two or more pulses of an initial polarity are applied and are followed by one or more pulses having opposite polarity. In another method, pulses of an initial polarity are repeatedly applied until the device fails and one or more pulses of opposite polarity are subsequently applied to restore the device to its initial performance. The pulses may be set pulses, reset pulses, or pulses that produce programmed states having a resistance intermediate between the set resistance and reset resistance of the device.
摘要翻译：编程改变设备故障的相变存储器件的方法。所述方法包括将两个或多个电能脉冲的序列应用于该装置，其中脉冲序列包括正极性脉冲和负极性脉冲。在一种方法中，施加初始极性的两个或更多个脉冲，并且后跟一个或多个具有相反极性的脉冲。在另一种方法中，重复施加初始极性的脉冲，直到器件发生故障，并且随后施加相反极性的一个或多个脉冲以将器件恢复到初始性能。脉冲可以是产生编程状态的脉冲，复位脉冲或脉冲，其具有位于设备的设定电阻和复位电阻之间的电阻。

23. 发明授权

US07525117B2 Chalcogenide devices and materials having reduced germanium or telluruim content 有权
标题翻译：硫族化物装置和具有降低的锗或碲化物含量的材料
公开(公告)号：US07525117B2
公开(公告)日：2009-04-28
申请号：US11301211
申请日：2005-12-12
申请人： Sergey A. Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
发明人： Sergey A. Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
IPC分类号： H01L29/02
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： A chalcogenide material and memory device exhibiting fast operation over an extended range of reset state resistances. Electrical devices containing the chalcogenide materials permit rapid transformations from the reset state to the set state for reset and set states having a high resistance ratio. The devices provide for high resistance contrast of memory states while preserving fast operational speeds. The chalcogenide materials include Ge, Sb and Te where the Ge and/or Te content is lean relative to Ge2Sb2Te5. In one embodiment, the concentration of Ge is between 11% and 22%, the concentration of Sb is between 22% and 65%, and the concentration of Te is between 28% and 55%. In a preferred embodiment, the concentration of Ge is between 15% and 18%, the concentration of Sb is between 32% and 35%, and the concentration of Te is between 48% and 51%.
摘要翻译：在扩展的复位状态电阻范围内呈现快速操作的硫族化物材料和存储器件。含有硫族化物材料的电气装置允许从复位状态到设定状态的快速转换以及具有高电阻比的设定状态。这些器件提供高电阻对比度的存储器状态，同时保持快速的操作速度。硫族化物材料包括Ge，Sb和Te，其中Ge和/或Te含量相对于Ge 2 Sb 2 Te 5是贫的。在一个实施方案中，Ge的浓度为11％至22％，Sb的浓度为22％至65％，Te的浓度为28％至55％。在优选的实施方案中，Ge的浓度为15％至18％，Sb的浓度为32％至35％，Te的浓度为48％至51％。

24. 发明授权

US07327602B2 Methods of accelerated life testing of programmable resistance memory elements 失效
标题翻译：可编程电阻存储元件加速寿命测试方法
公开(公告)号：US07327602B2
公开(公告)日：2008-02-05
申请号：US10960263
申请日：2004-10-07
申请人： Sergey A. Kostylev , Tyler Lowrey , Wolodymyr Czubatyj
发明人： Sergey A. Kostylev , Tyler Lowrey , Wolodymyr Czubatyj
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C29/50 , G11C2013/0078 , G11C2013/0092
摘要： A method of testing a programmable resistance memory element. The method includes applying a plurality of reset pulses to the memory element. Each of the reset pulses having an energy which is greater than the minimum energy needed to program the memory element from its set state to its reset state.
摘要翻译：一种测试可编程电阻存储元件的方法。该方法包括将多个复位脉冲施加到存储元件。每个复位脉冲具有大于将存储器元件从其设置状态编程到其复位状态所需的最小能量的能量。

25. 发明授权

US06914801B2 Method of eliminating drift in phase-change memory 有权
标题翻译：消除相变存储器漂移的方法
公开(公告)号：US06914801B2
公开(公告)日：2005-07-05
申请号：US10437134
申请日：2003-05-13
申请人： Sergey A. Kostylev , Wolodymyr Czubatyj , Tyler Lowrey
发明人： Sergey A. Kostylev , Wolodymyr Czubatyj , Tyler Lowrey
IPC分类号： G11C11/00 , G11C16/02
CPC分类号： G11C13/0004
摘要： A method of operating a electrically programmable phase-change memory element. The method includes the step of applying an electrical signal to memory element which is sufficient to return the memory element to its pre-drift resistance state.
摘要翻译：一种操作电可编程相变存储元件的方法。该方法包括将电信号施加到存储元件的步骤，其足以将存储元件返回到其预漂移电阻状态。

26. 发明授权

US08000125B2 Method of programming multi-layer chalcogenide devices 有权
标题翻译：编制多层硫属化物装置的方法
公开(公告)号：US08000125B2
公开(公告)日：2011-08-16
申请号：US12178148
申请日：2008-07-23
申请人： Regino Sandoval , Sergey A. Kostylev , Wolodymyr Czubatyj , Tyler Lowrey
发明人： Regino Sandoval , Sergey A. Kostylev , Wolodymyr Czubatyj , Tyler Lowrey
IPC分类号： G11C11/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： A method of programming a multi-layer chalcogenide electronic device. The device includes an active region in electrical communication with two terminals, where the active region includes two or more layers. The method includes providing an electrical signal between the two terminals, where the electrical signal alters an electrical characteristic of a layer remote from one of the terminals. In one embodiment, the layer remote from the terminal is a chalcogenide material and the electrical characteristic is resistance. In another embodiment, an electrical characteristic of the layer in contact with the terminal is also altered. The alteration of an electrical characteristic may be caused by a transformation of a chalcogenide material from one structural state to another structural state.
摘要翻译：一种编程多层硫族化物电子器件的方法。该器件包括与两个端子电连通的有源区域，其中有源区域包括两层或更多层。该方法包括在两个终端之间提供电信号，其中电信号改变远离其中一个终端的层的电特性。在一个实施例中，远离终端的层是硫族化物材料，并且电特性是电阻。在另一个实施例中，与终端接触的层的电特性也被改变。电特性的改变可能是由硫族化物材料从一种结构状态转变为另一种结构状态引起的。

27. 发明授权

US07990761B2 Immunity of phase change material to disturb in the amorphous phase 有权
标题翻译：相变材料在非晶相中的干扰的抗扰度
公开(公告)号：US07990761B2
公开(公告)日：2011-08-02
申请号：US12080001
申请日：2008-03-31
申请人： George Gordon , Semyon D. Savransky , Ward Parkinson , Sergey A. Kostylev , James Reed , Tyler Lowrey , Ilya V. Karpov , Gianpaolo Spadini
发明人： George Gordon , Semyon D. Savransky , Ward Parkinson , Sergey A. Kostylev , James Reed , Tyler Lowrey , Ilya V. Karpov , Gianpaolo Spadini
IPC分类号： G11C11/00
CPC分类号： G11C13/0033 , G11C8/10 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/0035 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C16/3431 , G11C29/04 , G11C2013/0052 , G11C2013/0078 , G11C2013/0092 , G11C2213/76
摘要： Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
摘要翻译：通过在对相变存储器中的复位状态进行编程时产生基本上不含结晶核的非晶相，可以减小从复位到设定状态的干扰。在一些实施例中，这可以通过使用超过相变存储元件的阈值电压的电流或电压来实现，但不超过将导致干扰的安全电流电压来实现。

28. 发明授权

US07767992B2 Multi-layer chalcogenide devices 有权
标题翻译：多层硫属化物装置
公开(公告)号：US07767992B2
公开(公告)日：2010-08-03
申请号：US11451913
申请日：2006-06-13
申请人： Regino Sandoval , Sergey A. Kostylev , Wolodymyr Czubatyj , Tyler Lowrey
发明人： Regino Sandoval , Sergey A. Kostylev , Wolodymyr Czubatyj , Tyler Lowrey
IPC分类号： H01L29/02
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： A multi-layer chalcogenide electronic device. The device includes an active region in electrical communication with two terminals, where the active region includes two or more layers. In one embodiment, the pore region includes two or more chalcogenide materials which differ in chemical composition. In another embodiment, the pore region includes one or more chalcogenide materials and a layer of Sb. The devices offer the advantages of minimal conditioning requirements, fast set speeds, high reset resistances and low set resistances.
摘要翻译：多层硫族化物电子器件。该器件包括与两个端子电连通的有源区域，其中有源区域包括两层或更多层。在一个实施方案中，孔区域包括化学组成不同的两种或更多种硫族化物材料。在另一个实施方案中，孔区包括一种或多种硫族化物材料和一层Sb。该器件具有最小的调理要求，快速设定速度，高复位电阻和低设定电阻的优点。

29. 发明申请

US20090244962A1 Immunity of phase change material to disturb in the amorphous phase 有权
标题翻译：相变材料在非晶相中的干扰的抗扰度
公开(公告)号：US20090244962A1
公开(公告)日：2009-10-01
申请号：US12080001
申请日：2008-03-31
申请人： George Gordon , Semyon D. Savransky , Ward Parkinson , Sergey A. Kostylev , James Reed , Tyler Lowrey , Ilya V. Karpov , Gianpaolo Spadini
发明人： George Gordon , Semyon D. Savransky , Ward Parkinson , Sergey A. Kostylev , James Reed , Tyler Lowrey , Ilya V. Karpov , Gianpaolo Spadini
IPC分类号： G11C11/00
CPC分类号： G11C13/0033 , G11C8/10 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/0035 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C16/3431 , G11C29/04 , G11C2013/0052 , G11C2013/0078 , G11C2013/0092 , G11C2213/76
摘要： Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
摘要翻译：通过在对相变存储器中的复位状态进行编程时产生基本上不含结晶核的非晶相，可以减小从复位到设定状态的干扰。在一些实施例中，这可以通过使用超过相变存储元件的阈值电压的电流或电压来实现，但不超过将导致干扰的安全电流电压来实现。

30. 发明授权

US07504675B2 Phase change memories with improved programming characteristics 有权
标题翻译：具有改进编程特性的相变存储器
公开(公告)号：US07504675B2
公开(公告)日：2009-03-17
申请号：US11709520
申请日：2007-02-22
申请人： Guy C. Wicker , Carl Schell , Sergey A. Kostylev , Stephen J. Hudgens
发明人： Guy C. Wicker , Carl Schell , Sergey A. Kostylev , Stephen J. Hudgens
IPC分类号： H01L29/76
CPC分类号： H01L45/141 , H01L27/2427 , H01L45/06
摘要： A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar.
摘要翻译：可以在延长的循环中以改进的速度和稳定的特性制造相变存储器。可以通过观察在凝固或复位状态下粘合的合金并找到实现更好的循环性能的中间或中间组合物来选择合金。这样的合金也可以经历更快的编程并且可以具有基本相似的设置和复位编程速度。

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