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    • 25. 发明授权
    • Composition for organic polymer gate insulating layer and organic thin film transistor using the same
    • 有机高分子栅极绝缘层的组成和使用其的有机薄膜晶体管
    • US07741635B2
    • 2010-06-22
    • US12182577
    • 2008-07-30
    • Seong Hyun KimSang Chul LimGi Heon KimJi Ho YoukTae Gon Kim
    • Seong Hyun KimSang Chul LimGi Heon KimJi Ho YoukTae Gon Kim
    • H01L35/24H01L51/00
    • H01L51/052H01L51/0545
    • Provided are a composition for an organic polymer gate insulating layer and an Organic Thin Film Transistor (OTFT) using the same. The composition includes an insulating organic polymer including at least one selected from the group consisting of polymethylmethacrylate (PMMA), polyvinylalcohol (PVA), polyvinylpyrrolidone (PVP), poly(vinyl phenol) (PVPh) and a copolymer thereof, a crosslinking monomer having two or more double bonds, and a photoinitiator. The OTFT includes a gate insulating layer of a semi-interpenetrating polymer network formed of the composition. The composition for a photoreactive organic polymer gate insulating layer has a photochemical characteristic that enables micropatterning, and can be formed into a layer having excellent chemical resistance, thermal resistance, surface characteristics and electrical characteristics.
    • 提供一种有机高分子栅极绝缘层和使用其的有机薄膜晶体管(OTFT)的组合物。 该组合物包括绝缘有机聚合物,其包括选自聚甲基丙烯酸甲酯(PMMA),聚乙烯醇(PVA),聚乙烯吡咯烷酮(PVP),聚(乙烯基苯酚)(PVPh)及其共聚物中的至少一种,具有两个 或更多双键,以及光引发剂。 OTFT包括由该组合物形成的半互穿聚合物网络的栅极绝缘层。 光反应性有机聚合物栅极绝缘层的组合物具有能够进行微图案化的光化学特性,并且可以形成为具有优异的耐化学性,耐热性,表面特性和电特性的层。
    • 26. 发明授权
    • Method of integrating organic light emitting diode and organic field effect transistor
    • 有机发光二极管和有机场效应晶体管的集成方法
    • US07393258B2
    • 2008-07-01
    • US11153357
    • 2005-06-16
    • Seong Hyun KimTae Hyoung ZyungJung Hun Lee
    • Seong Hyun KimTae Hyoung ZyungJung Hun Lee
    • H01L51/56
    • H01L27/3274H01L51/0021H01L51/0024H01L51/0545
    • Provided is a method of integrating an organic light emitting diode (OLED) and an organic field effect transistor (OFET) including: preparing an organic field effect transistor including at least one first electrode and an organic semiconductor on a first substrate; preparing an organic light emitting diode including at least one second electrode and an organic emission layer on a second substrate; disposing the OFET and the OLED to make the first and second electrodes opposite to each other; inserting an insulating layer, to which a predetermined metal contact line for electrically connecting the first and second electrodes is securely fixed, between the OFET and the OLED; and adhering the OFET and the OLED to integrate them as one device, whereby it is possible to effectively perform active driving, to extend a lifetime due to a high aperture ratio, and to produce the device using a simple process at a low cost.
    • 提供了一种集成有机发光二极管(OLED)和有机场效应晶体管(OFET)的方法,包括:在第一衬底上制备包括至少一个第一电极和有机半导体的有机场效应晶体管; 制备在第二基板上包括至少一个第二电极和有机发射层的有机发光二极管; 设置OFET和OLED以使第一和第二电极彼此相对; 插入绝缘层,用于电连接第一和第二电极的预定金属接触线被牢固地固定在OFET和OLED之间; 并且将OFET和OLED粘合在一起以将其集成为一个装置,由此可以有效地执行主动驱动,由于高开口率而延长使用寿命,并且以低成本使用简单的工艺生产该装置。
    • 28. 发明授权
    • Organic inverter including surface-treated layer and method of manufacturing the same
    • 有机逆变器包括表面处理层及其制造方法
    • US08039295B2
    • 2011-10-18
    • US12906457
    • 2010-10-18
    • Jae Bon KooKyung Soo SuhSeong Hyun Kim
    • Jae Bon KooKyung Soo SuhSeong Hyun Kim
    • H01L51/40
    • H01L27/283H01L51/0545
    • An organic inverter and a method of manufacturing the same are provided, which regulates threshold voltages depending on positions when an inverter circuit is manufactured on a substrate using an organic semiconductor. To form a depletion load transistor and an enhancement driver transistor at adjacent positions of the same substrate, the surface of the substrate is selectively treated by positions or selectively applied by self-assembly monolayer treatment. Thus, a D-inverter having a combination of a depletion mode and an enhancement mode is more easily realized than a conventional method using a transistor size effect. Also, the D-inverter can be realized even with the same W/L ratio, thereby increasing integration density. That is, the W/L ratio does not need to be increased to manufacture a depletion load transistor, thereby improving integration density.
    • 提供一种有机逆变器及其制造方法,其根据使用有机半导体在基板上制造逆变器电路时的位置来调节阈值电压。 为了在同一衬底的相邻位置处形成耗尽负载晶体管和增强驱动晶体管,衬底的表面通过位置选择性地处理或通过自组装单层处理选择性地施加。 因此,与使用晶体管尺寸效应的传统方法相比,更容易实现具有耗尽模式和增强模式的组合的D逆变器。 此外,即使以相同的W / L比率也能够实现D逆变器,从而提高集成密度。 也就是说,不需要增加W / L比来制造耗尽负载晶体管,从而提高集成密度。
    • 29. 发明授权
    • Organic inverter including surface-treated layer and method of manufacturing the same
    • 有机逆变器包括表面处理层及其制造方法
    • US07842952B2
    • 2010-11-30
    • US11931461
    • 2007-10-31
    • Jae Bon KooKyung Soo SuhSeong Hyun Kim
    • Jae Bon KooKyung Soo SuhSeong Hyun Kim
    • H01L31/00
    • H01L27/283H01L51/0545
    • An organic inverter and a method of manufacturing the same are provided, which regulates threshold voltages depending on positions when an inverter circuit is manufactured on a substrate using an organic semiconductor. To form a depletion load transistor and an enhancement driver transistor at adjacent positions of the same substrate, the surface of the substrate is selectively treated by positions or selectively applied by self-assembly monolayer treatment. Thus, a D-inverter having a combination of a depletion mode and an enhancement mode is more easily realized than a conventional method using a transistor size effect. Also, the D-inverter can be realized even with the same W/L ratio, thereby increasing integration density. That is, the W/L ratio does not need to be increased to manufacture a depletion load transistor, thereby improving integration density.
    • 提供一种有机逆变器及其制造方法,其根据使用有机半导体在基板上制造逆变器电路时的位置来调节阈值电压。 为了在同一衬底的相邻位置处形成耗尽负载晶体管和增强驱动晶体管,衬底的表面通过位置选择性地处理或通过自组装单层处理选择性地施加。 因此,与使用晶体管尺寸效应的传统方法相比,更容易实现具有耗尽模式和增强模式的组合的D逆变器。 此外,即使以相同的W / L比率也能够实现D逆变器,从而提高集成密度。 也就是说,不需要增加W / L比来制造耗尽负载晶体管,从而提高集成密度。