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21. 发明授权

US10504919B2 Semiconductor device, electronic component, and electronic device 有权
公开(公告)号：US10504919B2
公开(公告)日：2019-12-10
申请号：US15333401
申请日：2016-10-25
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Munehiro Kozuma , Yoshiyuki Kurokawa
IPC分类号： H01L27/12 , H01L27/118 , H01L29/786 , H01L29/24 , H01L21/66 , H01L49/02 , H01L23/544 , H01L23/00 , H01L23/31
CPC分类号： H01L27/11807 , H01L22/14 , H01L27/124 , H01L27/1225 , H01L27/1255 , H01L28/00 , H01L29/24 , H01L29/7869 , H01L29/78606 , H01L23/3107 , H01L23/544 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/92 , H01L2027/1189 , H01L2027/11838 , H01L2027/11875 , H01L2027/11879 , H01L2223/54486 , H01L2224/2919 , H01L2224/32245 , H01L2224/45139 , H01L2224/45144 , H01L2224/4847 , H01L2224/48247 , H01L2224/48463 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/3511 , H01L2924/00014 , H01L2224/05599 , H01L2224/73265 , H01L2224/32245 , H01L2224/48247 , H01L2924/00012 , H01L2224/45144 , H01L2924/00014 , H01L2224/45139 , H01L2924/00014
摘要： To achieve high processing capability, a semiconductor device includes first and second circuits, first to third wirings, and first to fourth transistors. The first circuit is electrically connected to the first wiring and a gate of the first transistor. One of a source and a drain of the first transistor is electrically connected to the second wiring. The other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor. The second circuit is electrically connected to the first wiring and a gate of the third transistor. One of a source and a drain of the third transistor is electrically connected to the third wiring. The other of the source and the drain of the third transistor is electrically connected to a gate of the fourth transistor. One of a source and a drain of the fourth transistor is electrically connected to one of a source and a drain of the second transistor. The other of the source and the drain of the fourth transistor is electrically connected to the other of the source and the drain of the second transistor.

22. 发明授权

US10390075B2 Semiconductor device, broadcasting system, and electronic device 有权
公开(公告)号：US10390075B2
公开(公告)日：2019-08-20
申请号：US15729191
申请日：2017-10-10
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Munehiro Kozuma
IPC分类号： H04N19/42 , H04N19/44 , H04N21/44 , H04N21/426 , G09G3/20 , H04N19/80
摘要： A semiconductor device that is suitable for high-speed operation is provided. The semiconductor device includes a decoder. The decoder includes a first circuit. The first circuit is configured to operate in synchronization with a clock signal. The first circuit is configured to perform image processing. A circuit configuration of the first circuit can be changed. Clock gating is performed on the first circuit to prevent the clock signal from being input to the first circuit when the circuit configuration of the first circuit is being changed. A broadcasting system including the semiconductor device is also provided.

23. 发明授权

US09397637B2 Voltage controlled oscillator, semiconductor device, and electronic device 有权
标题翻译：压控振荡器，半导体器件和电子器件
公开(公告)号：US09397637B2
公开(公告)日：2016-07-19
申请号：US14635117
申请日：2015-03-02
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Munehiro Kozuma , Yoshiyuki Kurokawa , Takayuki Ikeda
IPC分类号： H03K3/03 , H03K3/012 , H03L7/099 , H03L7/14
CPC分类号： H03K3/012 , H01L27/1207 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L29/24 , H01L29/7869 , H03B1/02 , H03K3/0315 , H03L7/0995 , H03L7/14 , H03L2207/08
摘要： A low-power voltage controlled oscillator is provided. The voltage controlled oscillator includes (2n+1) first circuit components (n is an integer of one or more). An output terminal of the first circuit component in a k-th stage (k is an integer of one or more and 2n or less) is connected to an input terminal of the first circuit component in a (k+1)-th stage. An output terminal of the first circuit component in a (2n+1)-th stage is connected to an input terminal of the first circuit component in a first stage. One of the first circuit components includes a second circuit component and a third circuit component whose input terminal is connected to an output terminal of the second circuit component. The third circuit component includes a first transistor and a second transistor whose source-drain resistance is controlled in accordance with a signal input to a gate through the first transistor.
摘要翻译：提供了一个低功耗压控振荡器。压控振荡器包括（2n + 1）个第一电路部件（n为1以上的整数）。第k级的第一电路部件的输出端子（k为1以上且2n以下的整数）在第（k + 1）级连接到第一电路部件的输入端子。第（2n + 1）级中的第一电路部件的输出端在第一级连接到第一电路部件的输入端。第一电路部件中的一个包括第二电路部件和第三电路部件，其输入端子连接到第二电路部件的输出端子。第三电路部件包括第一晶体管和第二晶体管，源极 - 漏极电阻根据通过第一晶体管输入到栅极的信号来控制。

24. 发明授权

US09384813B2 Semiconductor device applicable to a multi-context programmable logic device 有权
标题翻译：适用于多上下文可编程逻辑器件的半导体器件
公开(公告)号：US09384813B2
公开(公告)日：2016-07-05
申请号：US14613554
申请日：2015-02-04
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Takeshi Aoki , Munehiro Kozuma
IPC分类号： G11C11/34 , G06F17/50 , H03K19/177
CPC分类号： G11C11/34 , G06F17/5045 , G06F17/5054 , H03K19/177 , H03K19/1776
摘要： A low-power semiconductor device is provided. A memory device applicable to a multi-context programmable logic device (PLD) includes at least memory cells the number of which is the same as the number of contexts. Output nodes of the memory cells are electrically connected to an output node of a configuration memory through different path transistors. A circuit including a transistor and a capacitor makes a gate potential of the path transistor higher than a high-level potential. This prevents a decrease in the potential of the output node of the configuration memory due to the threshold voltage of the path transistor without an increase in power consumption.
摘要翻译：提供了一种低功率半导体器件。适用于多上下文可编程逻辑器件（PLD）的存储器件至少包括其数量与上下文数量相同的存储器单元。存储单元的输出节点通过不同的路径晶体管电连接到配置存储器的输出节点。包括晶体管和电容器的电路使路径晶体管的栅极电位高于高电位电位。这防止由于路径晶体管的阈值电压而导致的配置存储器的输出节点的电位降低，而不增加功耗。

25. 发明授权

US09349454B2 Semiconductor device and electronic device 有权
标题翻译：半导体器件和电子器件
公开(公告)号：US09349454B2
公开(公告)日：2016-05-24
申请号：US14636792
申请日：2015-03-03
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Takayuki Ikeda , Yoshiyuki Kurokawa , Munehiro Kozuma
IPC分类号： G11C16/04 , G11C16/10
CPC分类号： G11C11/24 , G11C7/16 , G11C11/40 , G11C11/404 , G11C11/405 , G11C11/4091 , G11C16/0441 , G11C16/10 , G11C27/005 , G11C27/02 , G11C27/024 , H01L21/02565 , H01L21/0262 , H01L23/528 , H01L27/1052 , H01L27/1156 , H01L27/1207 , H01L27/1225 , H01L27/1255 , H01L29/66969 , H01L29/7869 , H01L29/78693
摘要： A semiconductor device capable of generating a signal (e.g., a potential signal or a current signal) suitable for usage environment or a purpose. The semiconductor device includes a first memory circuit, a first circuit, and a second memory circuit. The first circuit converts a digital signal input from the first memory circuit into an analog signal. The first memory circuit includes an input node, an output node, a transistor, and a capacitor. The capacitor is electrically connected to the output node. The transistor can control a conduction state between the input node and the output node. An analog signal is input to the input node from the first circuit. The transistor includes an oxide semiconductor layer where a channel formation region is formed.
摘要翻译：能够产生适合于使用环境或目的的信号（例如，电位信号或电流信号）的半导体器件。半导体器件包括第一存储器电路，第一电路和第二存储器电路。第一电路将从第一存储器电路输入的数字信号转换为模拟信号。第一存储器电路包括输入节点，输出节点，晶体管和电容器。电容器电连接到输出节点。晶体管可以控制输入节点和输出节点之间的导通状态。模拟信号从第一电路输入到输入节点。晶体管包括其中形成沟道形成区的氧化物半导体层。

26. 发明授权

US09055245B2 Photodetector including difference data generation circuit and data input selection circuit 有权
标题翻译：光电检测器包括差分数据生成电路和数据输入选择电路
公开(公告)号：US09055245B2
公开(公告)日：2015-06-09
申请号：US13623912
申请日：2012-09-21
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Munehiro Kozuma
IPC分类号： H01J40/14 , H04N5/357 , H03F3/08 , G01J1/46 , H04N5/3745 , H04N5/378
CPC分类号： H04N5/363 , G01J1/46 , H03F3/08 , H04N5/357 , H04N5/3745 , H04N5/378
摘要： Adverse effects of noise are reduced. A photodetector circuit, a difference data generation circuit, and a data input selection circuit are included. The photodetector circuit has a function of generating an optical data signal. A first data signal and a second data signal is input to the difference data generation circuit and the difference data generation circuit has a function of generating difference data of data of the first data signal and data of the second data signal. The data input selection circuit has a function of determining that the data of optical data signal is regarded as data of the first data signal or data of the second data signal.
摘要翻译：噪音的不利影响降低。包括光电检测器电路，差分数据生成电路和数据输入选择电路。光检测器电路具有产生光数据信号的功能。第一数据信号和第二数据信号被输入到差数据生成电路，差数据生成电路具有产生第一数据信号的数据和第二数据信号的数据的差分数据的功能。数据输入选择电路具有确定光数据信号的数据被认为是第一数据信号的数据或第二数据信号的数据的功能。

27. 发明申请

US20150145559A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20150145559A1
公开(公告)日：2015-05-28
申请号：US14542874
申请日：2014-11-17
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Munehiro Kozuma
IPC分类号： H03K19/177 , H01L27/12 , H01L29/786
CPC分类号： H03K19/1776 , G11C7/20 , G11C2029/4402 , H01L27/0688 , H01L27/092 , H01L27/1156 , H01L27/1225 , H01L29/785 , H01L29/7869
摘要： To provide a highly reliable and low-power-consumption semiconductor device functioning as a programmable logic device. A monitor circuit is provided to monitor a change in the potential of a configuration memory in which a transistor is turned off to hold charge and a potential corresponding to the charge is stored as configuration data. The reset of the configuration data is controlled in accordance with the potential change. With such a structure, the configuration memory can be reconfigured before the configuration data is lost, resulting in improved reliability of the semiconductor device. In addition, reconfiguration can be performed every time data is lost. Accordingly, power consumption can be reduced as compared with the structure where reconfiguration is performed periodically.
摘要翻译：提供用作可编程逻辑器件的高可靠性和低功耗半导体器件。提供监视器电路以监视其中晶体管被截止以保持电荷的配置存储器的电位变化，并且与电荷相对应的电位被存储为配置数据。根据电位变化来控制配置数据的复位。通过这样的结构，可以在配置数据丢失之前重新配置配置存储器，从而提高半导体器件的可靠性。此外，每当数据丢失时，都可以进行重新配置。因此，与周期性地进行重新配置的结构相比，能够降低功耗。

28. 发明申请

US20150116000A1 PROGRAMMABLE LOGIC DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：可编程逻辑器件和半导体器件
公开(公告)号：US20150116000A1
公开(公告)日：2015-04-30
申请号：US14587588
申请日：2014-12-31
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Takeshi Aoki , Takayuki Ikeda , Yoshiyuki Kurokawa , Munehiro Kozuma
IPC分类号： H03K19/177
CPC分类号： H03K19/1776 , H03K19/017581
摘要： To provide a PLD having a reduced circuit area and an increased operation speed. In the circuit structure, a gate of a transistor provided between an input terminal and an output terminal of a programmable switch element is in an electrically floating state in a period when a signal is input to the programmable switch element. The structure enables the voltage of a gate to be increased by a boosting effect in response to a signal supplied from programmable logic elements, suppressing a reduction in amplitude voltage. This can reduce a circuit area by a region occupied by a booster circuit such as a pull-up circuit and increase operation speed.
摘要翻译：提供具有减小的电路面积和增加的操作速度的PLD。在电路结构中，设置在可编程开关元件的输入端子和输出端子之间的晶体管的栅极在信号被输入到可编程开关元件的时段内处于电浮动状态。该结构使得能够响应于从可编程逻辑元件提供的信号的升压效应来增加栅极的电压，从而抑制幅度电压的降低。这可以通过诸如上拉电路的升压电路占据的区域来减小电路面积，并且增加操作速度。

29. 发明申请

US20140285234A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20140285234A1
公开(公告)日：2014-09-25
申请号：US14217628
申请日：2014-03-18
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Munehiro Kozuma , Yoshiyuki Kurokawa
IPC分类号： H03K19/00
CPC分类号： H03K19/0013
摘要： To provide a charge pump circuit to manufacture a low-power-consumption PLD. A semiconductor device includes a first circuit and a second circuit electrically connected to the first circuit. A charge pump circuit formed of a transistor including an oxide semiconductor and a boosting control circuit controlling the charge pump circuit are provided between the first circuit and the second circuit. The first circuit and the charge pump circuit operate at first power supply voltage, and the boosting control circuit and the second circuit operate at second power supply voltage. The first power supply voltage is lower than the second power supply voltage.
摘要翻译：提供电荷泵电路来制造低功耗PLD。半导体器件包括电连接到第一电路的第一电路和第二电路。在第一电路和第二电路之间设置由包括氧化物半导体的晶体管和控制电荷泵电路的升压控制电路构成的电荷泵电路。第一电路和电荷泵电路在第一电源电压下工作，并且升压控制电路和第二电路在第二电源电压下工作。第一电源电压低于第二电源电压。

30. 发明授权

US12062764B2 Semiconductor device 有权
公开(公告)号：US12062764B2
公开(公告)日：2024-08-13
申请号：US17420536
申请日：2020-01-06
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Ryota Tajima , Kei Takahashi , Hiroki Inoue , Munehiro Kozuma , Takahiro Fukutome
IPC分类号： H01M10/44 , G01R31/367 , H01M10/48 , H02J7/00
CPC分类号： H01M10/443 , G01R31/367 , H01M10/486 , H02J7/007182 , H02J7/007194
摘要： A semiconductor device that inhibits deterioration of a secondary battery is provided. The semiconductor device includes a secondary battery module and a first circuit. The secondary battery module includes a secondary battery and a sensor. The first circuit includes a variable resistor. The sensor has a function of measuring a temperature of the secondary battery. The first circuit has a function of judging the charge voltage of the secondary battery and outputting a first result; a function of judging the temperature of the secondary battery measured by the sensor and outputting a second result; a function of determining the magnitude of the variable resistor on the basis of the first result and the second result; a function of discharging the charge voltage through the variable resistor; and a function of stopping discharge when the charge voltage reaches a specified voltage.

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