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    • 21. 发明授权
    • Thin film transistor and method for producing the same
    • 薄膜晶体管及其制造方法
    • US5879976A
    • 1999-03-09
    • US911021
    • 1997-08-13
    • Masahiro Fujiwara
    • Masahiro Fujiwara
    • H01L21/336H01L29/786
    • H01L29/66757H01L29/78618H01L29/78621
    • A thin film transistor formed on an insulative substrate includes: a first semiconductor film including a channel region and first source/drain regions; a gate insulating film formed on the channel region of the first semiconductor film; a gate electrode formed on the gate insulating film; an insulating film formed on surfaces of the gate electrode; and a second semiconductor film formed on the first source/drain regions of the first semiconductor film. The second semiconductor film includes second source/drain regions which make contact with the first source/drain regions of the first semiconductor film, respectively, the second source/drain regions being separated above the gate electrode by a gap.
    • 形成在绝缘基板上的薄膜晶体管包括:包括沟道区和第一源极/漏极区的第一半导体膜; 形成在所述第一半导体膜的沟道区上的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极; 形成在所述栅电极的表面上的绝缘膜; 以及形成在第一半导体膜的第一源极/漏极区上的第二半导体膜。 第二半导体膜包括与第一半导体膜的第一源极/漏极区分别接触的第二源极/漏极区域,第二源极/漏极区域在栅极电极之上分开间隙。
    • 22. 发明申请
    • Shoe Sole Having Diagonal Groove
    • 鞋底有对角槽
    • US20150135558A1
    • 2015-05-21
    • US14399153
    • 2012-05-10
    • Takashi InomataTsuyoshi NishiwakiMasahiro FujiwaraYoshiyasu Ando
    • Takashi InomataTsuyoshi NishiwakiMasahiro FujiwaraYoshiyasu Ando
    • A43B13/22
    • A43B13/223A43B13/14A43B13/141
    • A shoe sole including: an outsole having a tread surface to be in contact with a road surface; and a midsole arranged on the outsole, wherein: the midsole is exposed in a central section of a rear foot section and an arch section; in the central section and a lateral side section of the rear foot section of the shoe sole, a diagonal groove is formed extending in a diagonal front-rear direction in the rear foot section to an outer edge of a lateral side of the rear foot section; an angle β, formed between a virtual center line of the diagonal groove and a longitudinal axis connecting between a center of a heel and a middle point between a big-toe ball and a little-toe ball, is set in a range of 12° to 35°; and a virtual intersection point between the longitudinal axis and the center line is set within a range of 21% to 43% of a full length of the longitudinal axis of the shoe sole from a posterior end of the shoe sole, the diagonal groove extending to a point anterior and medial to the intersection point.
    • 一种鞋底,包括:具有与路面接触的胎面的外底; 以及布置在所述外底上的中底,其中:所述中底露出在后脚部和拱形部分的中心部分中; 在鞋底的中央部分和后脚部分的横向侧部分中,形成在后脚部分中沿对角线前后方向延伸到后足部分的侧面的外边缘的对角槽 ; 形成在斜槽的虚拟中心线和连接脚跟中心与大脚趾球与小脚趾球之间的中点之间的纵轴的角度bgr设定在12 °至35°; 并且纵轴和中心线之间的虚拟交点设置在鞋底的纵向轴线的整个长度的21%至43%的范围内,鞋底的后端延伸到 交叉点前后中点。
    • 24. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08803151B2
    • 2014-08-12
    • US13641186
    • 2011-04-15
    • Nami OkajimaMasahiro Fujiwara
    • Nami OkajimaMasahiro Fujiwara
    • H01L29/04H01L29/10G02F1/1368H01L27/146G06F3/042G02F1/1333
    • H01L27/14678G02F1/13338G02F1/1368G06F3/042H01L27/14645
    • A semiconductor device (100) includes: a first thin film transistor (105) of a first conductivity type formed on a substrate for each pixel; and a plurality of photosensor sections (200). Each photosensor section (200) includes a photodetecting portion including a thin film diode (202), a capacitor (206) for storing a photocurrent occurring in the thin film diode (202), and a second thin film transistor (204) of the first conductivity type, the photodetecting portion being connected to the capacitor (206) via the second thin film transistor (204); the first and second thin film transistors (105, 204) and the thin film diode (202) have semiconductor layers made of the same semiconductor film; and a characteristic of the first thin film transistor (105) and a characteristic of the second thin film transistor (204) are different. As a result, the characteristics of the thin film transistors for use in the pixels and the thin film transistors for use in the photosensor sections can be controlled in accordance with the characteristics required of the respective thin film transistors.
    • 半导体器件(100)包括:对于每个像素形成在基板上的第一导电类型的第一薄膜晶体管(105) 和多个光传感器部(200)。 每个光电传感器部分(200)包括一个光电检测部分,包括薄膜二极管(202),用于存储在薄膜二极管(202)中出现的光电流的电容器(206)和第一薄膜晶体管 所述光电检测部分经由所述第二薄膜晶体管连接到所述电容器(206); 第一和第二薄膜晶体管(105,204)和薄膜二极管(202)具有由相同半导体膜制成的半导体层; 并且第一薄膜晶体管(105)的特性和第二薄膜晶体管(204)的特性不同。 结果,可以根据各个薄膜晶体管所需的特性来控制用于像素的薄膜晶体管和用于光电传感器部分的薄膜晶体管的特性。
    • 26. 发明授权
    • Insulated ultrafine powder and high dielectric constant resin composite material
    • 绝缘超细粉末和高介电常数树脂复合材料
    • US08184035B2
    • 2012-05-22
    • US11573307
    • 2005-08-04
    • Takahiro MatsumotoToshiaki YamadaHirotaka TsuruyaTakuya GotoMasahiro Fujiwara
    • Takahiro MatsumotoToshiaki YamadaHirotaka TsuruyaTakuya GotoMasahiro Fujiwara
    • H01Q17/00
    • C09C1/56B82Y30/00C01P2004/32C01P2004/62C01P2004/64C01P2004/84C01P2006/40C08K9/02C09C1/46C09C1/565C09C3/063H01B1/24Y10T428/1352
    • The present invention provides an insulated ultrafine powder containing electrically conductive ultrafine particles coated with an insulation coating, characterized in that the electrically conductive ultrafine particles are formed of a carbon material which is in the form of spherical particles having a diameter of 1 nm or more and 500 nm or less, fibers having a cross-sectional diameter of 1 nm or more and 500 nm or less, or plate-like particles having a thickness of 1 nm or more and 500 nm or less; the insulation coating is formed of an insulating metal oxide or a hydrate thereof; and the thickness of the insulation coating is 0.3 nm or more, and, when the electrically conductive ultrafine particles are in the form of spherical particles, the coating thickness is equal to or less than the diameter of the particles; when the electrically conductive ultrafine particles are in the form of fibers, the coating thickness is equal to or less than the cross-sectional diameter of the fibers; or when the electrically conductive ultrafine particles are in the form of plate-like particles, the coating thickness is equal to or less than the thickness of the plate-like particles; and as well a high-dielectric-constant resin composite material containing the insulated ultrafine powder. The resin composite material exhibits high dielectric constant and radio wave absorbability, while maintaining fundamental characteristics of resin material (i.e., excellent moldability and workability, and light weight).
    • 本发明提供了一种包含涂覆有绝缘涂层的导电超细颗粒的绝缘超细粉末,其特征在于,导电超细颗粒由直径为1nm或更大的球形颗粒形式的碳材料形成, 500nm以下的纤维,其截面直径为1nm以上且500nm以下的纤维或厚度为1nm以上且500nm以下的板状粒子, 绝缘涂层由绝缘金属氧化物或其水合物形成; 并且绝缘涂层的厚度为0.3nm以上,并且当导电性超细颗粒为球形颗粒的形式时,涂层厚度等于或小于颗粒的直径; 当导电性超细颗粒为纤维形式时,涂层厚度等于或小于纤维的横截面直径; 或者当导电性超细颗粒呈板状颗粒形式时,涂层厚度等于或小于板状颗粒的厚度; 以及含有绝缘超细粉末的高介电常数树脂复合材料。 树脂复合材料具有高介电常数和无线电波吸收性,同时保持树脂材料的基本特性(即,优异的成型性和可加工性,重量轻)。
    • 27. 发明申请
    • INSULATED ULTRAFINE POWDER AND HIGH DIELECTRIC CONSTANT RESIN COMPOSITE MATERIAL
    • 绝缘超细粉末和高介电常数树脂复合材料
    • US20110102231A1
    • 2011-05-05
    • US11573307
    • 2005-08-04
    • Takahiro MatsumotoToshiaki YamadaHirotaka TsuruyaTakuya GotoMasahiro Fujiwara
    • Takahiro MatsumotoToshiaki YamadaHirotaka TsuruyaTakuya GotoMasahiro Fujiwara
    • H01Q17/00H01B1/04H01B1/02B32B5/00B05D5/12B32B1/06B82Y30/00
    • C09C1/56B82Y30/00C01P2004/32C01P2004/62C01P2004/64C01P2004/84C01P2006/40C08K9/02C09C1/46C09C1/565C09C3/063H01B1/24Y10T428/1352
    • The present invention provides an insulated ultrafine powder containing electrically conductive ultrafine particles coated with an insulation coating, characterized in that the electrically conductive ultrafine particles are formed of a carbon material which is in the form of spherical particles having a diameter of 1 nm or more and 500 nm or less, fibers having a cross-sectional diameter of 1 nm or more and 500 nm or less, or plate-like particles having a thickness of 1 nm or more and 500 nm or less; the insulation coating is formed of an insulating metal oxide or a hydrate thereof; and the thickness of the insulation coating is 0.3 nm or more, and, when the electrically conductive ultrafine particles are in the form of spherical particles, the coating thickness is equal to or less than the diameter of the particles; when the electrically conductive ultrafine particles are in the form of fibers, the coating thickness is equal to or less than the cross-sectional diameter of the fibers; or when the electrically conductive ultrafine particles are in the form of plate-like particles, the coating thickness is equal to or less than the thickness of the plate-like particles; and as well a high-dielectric-constant resin composite material containing the insulated ultrafine powder. The resin composite material exhibits high dielectric constant and radio wave absorbability, while maintaining fundamental characteristics of resin material (i.e., excellent moldability and workability, and light weight).
    • 本发明提供了一种包含涂覆有绝缘涂层的导电超细颗粒的绝缘超细粉末,其特征在于,导电超细颗粒由直径为1nm或更大的球形颗粒形式的碳材料形成, 500nm以下的纤维,其截面直径为1nm以上且500nm以下的纤维或厚度为1nm以上且500nm以下的板状粒子, 绝缘涂层由绝缘金属氧化物或其水合物形成; 并且绝缘涂层的厚度为0.3nm以上,并且当导电性超细颗粒为球形颗粒的形式时,涂层厚度等于或小于颗粒的直径; 当导电性超细颗粒为纤维形式时,涂布厚度等于或小于纤维的横截面直径; 或者当导电性超细颗粒呈板状颗粒形式时,涂层厚度等于或小于板状颗粒的厚度; 以及含有绝缘超细粉末的高介电常数树脂复合材料。 树脂复合材料具有高介电常数和无线电波吸收性,同时保持树脂材料的基本特性(即,优异的成型性和可加工性,重量轻)。