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21. 发明申请

US20080124853A1 VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS HAVING BURIED GATES AND METHODS OF MAKING 有权
标题翻译：带通孔的垂直通道连接场效应晶体管及其制作方法
公开(公告)号：US20080124853A1
公开(公告)日：2008-05-29
申请号：US11935442
申请日：2007-11-06
申请人： Lin Cheng , Michael S. Mazzola
发明人： Lin Cheng , Michael S. Mazzola
IPC分类号： H01L21/337
CPC分类号： H01L29/8083 , H01L29/0619 , H01L29/1066 , H01L29/1608 , H01L29/66909
摘要： Semiconductor devices and methods of making the devices are described. The devices can be implemented in SiC and can include epitaxially grown n-type drift and p-type trenched gate regions, and an n-type epitaxially regrown channel region on top of the trenched p-gate regions. A source region can be epitaxially regrown on top of the channel region or selectively implanted into the channel region. Ohmic contacts to the source, gate and drain regions can then be formed. The devices can include edge termination structures such as guard rings, junction termination extensions (JTE), or other suitable p-n blocking structures. The devices can be fabricated with different threshold voltages, and can be implemented for both depletion and enhanced modes of operation for the same channel doping. The devices can be used as discrete power transistors and in digital, analog, and monolithic microwave integrated circuits.
摘要翻译：对半导体装置及其制造方法进行说明。器件可以在SiC中实现，并且可以包括外延生长的n型漂移和p型沟槽栅极区域，以及在沟槽p型栅极区域顶部的n型外延再生长沟道区域。源极区域可以在沟道区域的顶部外延再生长或选择性地植入沟道区域。然后可以形成到源极，栅极和漏极区域的欧姆接触。这些装置可以包括边缘终端结构，例如保护环，连接终止扩展（JTE）或其他合适的p-n阻塞结构。这些器件可以用不同的阈值电压制造，并且可以针对相同沟道掺杂的耗尽和增强的工作模式来实现。这些器件可用作分立功率晶体管和数字，模拟和单片微波集成电路。

22. 发明申请

US20140070230A1 USING A CARBON VACANCY REDUCTION MATERIAL TO INCREASE AVERAGE CARRIER LIFETIME IN A SILICON CARBIDE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：使用碳减排材料在硅碳化硅半导体器件中增加平均载体寿命
公开(公告)号：US20140070230A1
公开(公告)日：2014-03-13
申请号：US13610993
申请日：2012-09-12
申请人： Michael John O'Loughlin , Lin Cheng , Albert Augustus Burk, JR. , Anant Kumar Agarwal
发明人： Michael John O'Loughlin , Lin Cheng , Albert Augustus Burk, JR. , Anant Kumar Agarwal
IPC分类号： H01L29/16 , H01L21/02
摘要： A semiconductor die and a process for fabricating the semiconductor die are disclosed. The semiconductor die has a substrate and a silicon carbide (SiC) epitaxial structure on the substrate. The SiC epitaxial structure includes at least a first N-type SiC layer, at least a first P-type SiC layer, and carbon vacancy reduction material, which has been implanted into a surface of the SiC epitaxial structure. Further, the SiC epitaxial structure has been annealed to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the SiC epitaxial structure, thereby increasing an average carrier lifetime in the SiC epitaxial structure.
摘要翻译：公开了半导体管芯和半导体管芯的制造工艺。半导体管芯在衬底上具有衬底和碳化硅（SiC）外延结构。 SiC外延结构至少包括已经注入到SiC外延结构的表面中的第一N型SiC层，至少第一P型SiC层和碳空位还原材料。此外，SiC外延结构已经被退火以动员碳空位还原材料以弥散基本上贯穿整个SiC外延结构的碳原子，从而增加了SiC外延结构中的平均载流子寿命。

23. 发明授权

US08563726B2 Stereoselective reduction of a morphinone 有权
标题翻译：吗啡酮的立体选择性还原
公开(公告)号：US08563726B2
公开(公告)日：2013-10-22
申请号：US13447131
申请日：2012-04-13
申请人： Lin Cheng , Michael D. Bentley
发明人： Lin Cheng , Michael D. Bentley
IPC分类号： C07D489/02
CPC分类号： C07D489/02 , Y02P20/55
摘要： A synthetic method is provided, wherein the method comprises stereoselectively reducing a ketone of a morphinone to form a reduced morphinone and optionally covalently attaching a water soluble polymer to the reduced morphinone.
摘要翻译：提供了一种合成方法，其中所述方法包括立体选择性还原吗啡酮的酮以形成还原的吗啡酮并且任选地将水溶性聚合物共价连接到还原的吗啡酮上。

24. 发明授权

US08349307B2 Polymer conjugates of opioid antagonists 有权
公开(公告)号：US08349307B2
公开(公告)日：2013-01-08
申请号：US12574335
申请日：2009-10-06
申请人： Michael David Bentley , Michael James Roberts , Xiaoming Shen , Lin Cheng
发明人： Michael David Bentley , Michael James Roberts , Xiaoming Shen , Lin Cheng
IPC分类号： A61K31/74
CPC分类号： A61K47/60
摘要： The invention provides polymer conjugates of opioid antagonists comprising a polymer, such as poly(ethylene glycol), covalently attached to an opioid antagonist. The linkage between the polymer and the opioid antagonist is preferably hydrolytically stable. The invention also includes a method of treating one or more side effects associated with the use of opioid analgesics, such as constipation, nausea, or pruritus, by administering a polymer conjugate of the invention.

25. 发明授权

US08034825B2 Chemically modified small molecules 有权
标题翻译：化学修饰的小分子
公开(公告)号：US08034825B2
公开(公告)日：2011-10-11
申请号：US12822935
申请日：2010-06-24
申请人： Michael D. Bentley , Tacey X. Viegas , Richard R. Goodin , Lin Cheng , Xuan Zhao
发明人： Michael D. Bentley , Tacey X. Viegas , Richard R. Goodin , Lin Cheng , Xuan Zhao
IPC分类号： A61K31/485 , C07D489/08
CPC分类号： C08G65/337 , A61K47/60 , C08G65/332 , C08G65/33317 , C08G65/33396 , C08L2203/02
摘要： The invention provides small molecule drugs that are chemically modified by covalent attachment of a water-soluble oligomer obtained from a monodisperse or bimodal water-soluble oligomer composition. A conjugate of the invention, when administered by any of a number of administration routes, exhibits a reduced biological membrane crossing rate as compared to the biological membrane crossing rate of the small molecule drug not attached to the water-soluble oligomer.
摘要翻译：本发明提供了通过共价连接由单分散或双峰水溶性低聚物组合物获得的水溶性低聚物进行化学修饰的小分子药物。当与多种施用途径中的任何一种施用时，本发明的缀合物与未附着于水溶性低聚物的小分子药物的生物膜交联率相比，显示出降低的生物膜交叉率。

26. 发明申请

US20070228505A1 Junction barrier schottky rectifiers having epitaxially grown p+-n junctions and methods of making 审中-公开
标题翻译：具有外延生长的p + -n结的结型势垒肖特基整流器和制造方法
公开(公告)号：US20070228505A1
公开(公告)日：2007-10-04
申请号：US11396615
申请日：2006-04-04
申请人： Michael Mazzola , Lin Cheng
发明人： Michael Mazzola , Lin Cheng
IPC分类号： H01L31/07
CPC分类号： H01L29/872 , H01L29/0615 , H01L29/0619 , H01L29/0623 , H01L29/0661 , H01L29/1608 , H01L29/8611
摘要： A junction barrier Schottky (JBS) rectifier device and a method of making the device are described. The device comprises an epitaxially grown first n-type drift layer and p-type regions forming p+-n junctions and self-planarizing epitaxially over-grown second n-type drift regions between and, optionally, on top of the p-type regions. The device may include an edge termination structure such as an exposed or buried P+ guard ring, a regrown or implanted junction termination extension (JTE) region, or a “deep” mesa etched down to the substrate. The Schottky contact to the second n-type drift region and the ohmic contact to the p-type region together serve as an anode. The cathode can be formed by ohmic contact to the n-type region on the backside of the wafer. The devices can be used in monolithic digital, analog, and microwave integrated circuits.
摘要翻译：描述了结屏障肖特基（JBS）整流器件及制造器件的方法。该器件包括外延生长的第一n型漂移层和形成p + S + n结的p型区域和自平面化外延生长的第二n型漂移区之间，并且任选地在顶级的p型地区。该装置可以包括边缘终端结构，例如暴露或掩埋的P +保护环，再生长或植入的连接终止延伸（JTE）区域或向下蚀刻到衬底的“深”台面。与第二n型漂移区的肖特基接触和与p型区的欧姆接触一起用作阳极。阴极可以通过欧姆接触形成在晶片背面的n型区域上。该器件可用于单片数字，模拟和微波集成电路。

27. 发明申请

US20070029573A1 Vertical-channel junction field-effect transistors having buried gates and methods of making 审中-公开
标题翻译：具有掩埋栅极的垂直沟道结场效应晶体管及其制造方法
公开(公告)号：US20070029573A1
公开(公告)日：2007-02-08
申请号：US11198298
申请日：2005-08-08
申请人： Lin Cheng , Michael Mazzola
发明人： Lin Cheng , Michael Mazzola
IPC分类号： H01L29/423
CPC分类号： H01L29/8083 , H01L29/0619 , H01L29/1066 , H01L29/1608 , H01L29/66909
摘要： Semiconductor devices and methods of making the devices are described. The devices can be implemented in SiC and can include epitaxially grown n-type drift and p-type trenched gate regions, and an n-type epitaxially regrown channel region on top of the trenched p-gate regions. A source region can be epitaxially regrown on top of the channel region or selectively implanted into the channel region. Ohmic contacts to the source, gate and drain regions can then be formed. The devices can include edge termination structures such as guard rings, junction termination extensions (JTE), or other suitable p-n blocking structures. The devices can be fabricated with different threshold voltages, and can be implemented for both depletion and enhanced modes of operation for the same channel doping. The devices can be used as discrete power transistors and in digital, analog, and monolithic microwave integrated circuits.
摘要翻译：对半导体装置及其制造方法进行说明。器件可以在SiC中实现，并且可以包括外延生长的n型漂移和p型沟槽栅极区域，以及在沟槽p型栅极区域顶部的n型外延再生长沟道区域。源极区域可以在沟道区域的顶部外延再生长或选择性地植入沟道区域。然后可以形成到源极，栅极和漏极区域的欧姆接触。这些装置可以包括边缘终端结构，例如保护环，连接终止扩展（JTE）或其他合适的p-n阻塞结构。这些器件可以用不同的阈值电压制造，并且可以针对相同沟道掺杂的耗尽和增强的工作模式来实现。这些器件可用作分立功率晶体管和数字，模拟和单片微波集成电路。

28. 发明授权

US07056500B2 Polymer conjugates of opioid antagonists 有权
公开(公告)号：US07056500B2
公开(公告)日：2006-06-06
申请号：US10274296
申请日：2002-10-18
申请人： Michael David Bentley , Michael James Roberts , Xiaoming Shen , Lin Cheng
发明人： Michael David Bentley , Michael James Roberts , Xiaoming Shen , Lin Cheng
IPC分类号： A81K31/74
CPC分类号： A61K47/60
摘要： The invention provides polymer conjugates of opioid antagonists comprising a polymer, such as poly(ethylene glycol), covalently attached to an opioid antagonist. The linkage between the polymer and the opioid antagonist is preferably hydrolytically stable. The invention also includes a method of treating one or more side effects associated with the use of opioid analgesics, such as constipation, nausea, or pruritus, by administering a polymer conjugate of the invention.

29. 发明授权

US09006219B2 Oligomer-foscarnet conjugates 有权
标题翻译：寡聚物 - 膦甲酸共轭物
公开(公告)号：US09006219B2
公开(公告)日：2015-04-14
申请号：US12921697
申请日：2009-03-12
申请人： Timothy A. Riley , Lin Cheng
发明人： Timothy A. Riley , Lin Cheng
IPC分类号： A61K31/662 , C07F9/38 , C07F9/40 , A61P31/18 , A61K47/48
CPC分类号： A61K31/662 , A61K47/60 , C07F9/40 , C08G65/3355 , C08G2650/02 , C08G2650/04 , C08G2650/38
摘要： The invention relates to (among other things) oligomer-foscarnet conjugates and related compounds. A conjugate of the invention, when administered by any of a number of administration routes, exhibits advantages over previously administered un-conjugated foscarnet compounds.
摘要翻译：本发明涉及（尤其）低聚物 - 膦甲酸共轭物和相关化合物。当通过任何多种施用途径给药时，本发明的缀合物显示出优于先前施用的未缀合的膦甲酸酯化合物的优点。

30. 发明授权

US08928074B2 Vertical junction field effect transistors and diodes having graded doped regions and methods of making 有权
标题翻译：具有渐变掺杂区域的垂直结型场效应晶体管和二极管及其制造方法
公开(公告)号：US08928074B2
公开(公告)日：2015-01-06
申请号：US13434976
申请日：2012-03-30
申请人： Lin Cheng , Michael Mazzola
发明人： Lin Cheng , Michael Mazzola
IPC分类号： H01L29/66 , H01L29/36 , H01L29/872 , H01L29/808 , H01L29/868 , H01L29/10 , H01L29/16
CPC分类号： H01L29/8083 , H01L29/1066 , H01L29/1608 , H01L29/36 , H01L29/6606 , H01L29/66068 , H01L29/868 , H01L29/872
摘要： Semiconductor devices and methods of making the devices are described. The devices can be junction field-effect transistors (JFETs) or diodes such as junction barrier Schottky (JBS) diodes or PiN diodes. The devices have graded p-type semiconductor layers and/or regions formed by epitaxial growth. The methods do not require ion implantation. The devices can be made from a wide-bandgap semiconductor material such as silicon carbide (SiC) and can be used in high temperature and high power applications.
摘要翻译：对半导体装置及其制造方法进行说明。器件可以是结型场效应晶体管（JFET）或二极管，例如结型势垒肖特基（JBS）二极管或PiN二极管。器件具有通过外延生长形成的渐变p型半导体层和/或区域。该方法不需要离子注入。这些器件可以由诸如碳化硅（SiC）的宽带隙半导体材料制成，并且可以用于高温和高功率应用中。

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