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21. 发明授权

US09293468B2 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US09293468B2
公开(公告)日：2016-03-22
申请号：US14533821
申请日：2014-11-05
申请人： SK hynix Inc.
发明人： Sung-Kun Park , Young-Jun Kwon
IPC分类号： H01L29/76 , H01L29/792 , H01L29/788 , H01L29/78 , H01L21/762 , H01L21/336 , H01L27/115 , H01L29/423
CPC分类号： H01L27/11521 , H01L27/11519 , H01L29/42324 , H01L29/7881
摘要： A nonvolatile memory device includes a tunneling region and an erase region formed over a substrate, a selection gate formed over the substrate to overlap with the tunneling region, a floating gate formed over the substrate to be disposed adjacent to the selection gate with a gap therebetween and to overlap with the tunneling region and the erase region, and a charge blocking layer filling the gap.
摘要翻译：非易失性存储器件包括在衬底上形成的隧道区域和擦除区域，形成在衬底上以与隧道区域重叠的选择栅极，形成在衬底上方的浮栅，以与选择栅极相邻设置，其间具有间隙并且与隧穿区域和擦除区域重叠，以及填充间隙的电荷阻挡层。

22. 发明授权

US09166013B2 Nonvolatile memory device and method for fabricating the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US09166013B2
公开(公告)日：2015-10-20
申请号：US14020645
申请日：2013-09-06
申请人： SK hynix Inc.
发明人： Sung-Kun Park
IPC分类号： H01L29/792 , H01L29/423 , H01L27/115 , H01L21/28
CPC分类号： H01L27/11563 , H01L21/28273 , H01L21/28282 , H01L27/115 , H01L27/11521 , H01L27/11573 , H01L29/4234 , H01L29/7923
摘要： A nonvolatile memory device having a plurality of unit cells, each of the plurality of unit cells includes a first transistor suitable for having a fixed threshold voltage, and a second transistor suitable for coupling to the first transistor in parallel and having a variable threshold voltage.
摘要翻译：一种非易失性存储器件，具有多个单元电池，所述多个单元电池中的每一个均包括适于具有固定阈值电压的第一晶体管，以及适于并联耦合到所述第一晶体管并且具有可变阈值电压的第二晶体管。

23. 发明授权

US11417691B2 Image sensor including dummy patterns positioned between adjacent transfer gates 有权
公开(公告)号：US11417691B2
公开(公告)日：2022-08-16
申请号：US17064245
申请日：2020-10-06
申请人： SK hynix Inc.
发明人： Sung-Kun Park , Hye-Won Mun
IPC分类号： H01L27/146 , H04N5/376 , H04N5/378
摘要： An image sensor includes a first transfer gate formed over a substrate, and including a first projection; a second transfer gate formed over the substrate, neighboring the first transfer gate, and including a second projection; and a floating diffusion formed in the substrate, and partially overlapping with the first transfer gate and the second transfer gate, wherein the first projection and the second projection face each other.

24. 发明授权

US10833112B2 Image sensor including transfer gates with projections extending from the sidewalls and method of fabricating the same 有权
公开(公告)号：US10833112B2
公开(公告)日：2020-11-10
申请号：US16148786
申请日：2018-10-01
申请人： SK hynix Inc.
发明人： Sung-Kun Park , Hye-Won Mun
IPC分类号： H01L27/146 , H04N5/376 , H04N5/378
摘要： An image sensor includes a first transfer gate formed over a substrate, and including a first projection; a second transfer gate formed over the substrate, neighboring the first transfer gate, and including a second projection; and a floating diffusion formed in the substrate, and partially overlapping with the first transfer gate and the second transfer gate, wherein the first projection and the second projection face each other.

25. 发明授权

US10008526B2 Image sensor and method for fabricating the same 有权
公开(公告)号：US10008526B2
公开(公告)日：2018-06-26
申请号：US15238468
申请日：2016-08-16
申请人： SK hynix Inc.
发明人： Sung-Kun Park , Yun-Hui Yang , Pyong-Su Kwag , Dong-Hyun Woo , Young-Jun Kwon , Min-Ki Na , Cha-Young Lee , Ho-Ryeong Lee
IPC分类号： H01L29/04 , H01L27/146
CPC分类号： H01L27/14616 , H01L27/14603 , H01L27/14614 , H01L27/1463 , H01L27/14638 , H01L27/14643 , H01L27/14689
摘要： An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.

26. 发明授权

US09935142B2 Image sensor including transfer gates in deep trenches 有权
公开(公告)号：US09935142B2
公开(公告)日：2018-04-03
申请号：US15441437
申请日：2017-02-24
申请人： SK hynix Inc.
发明人： Kwang Hwangbo , Sung-Kun Park
IPC分类号： H01L27/148 , H01L27/146 , H04N5/378
CPC分类号： H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14645 , H01L27/14689 , H04N5/378
摘要： An image sensor is described. The image sensor includes a photodiode that is formed in a substrate, a floating diffusion region that vertically overlaps with a first portion of the photodiode, a shallow trench isolation (STI) region that vertically overlaps with a second portion of the photodiode and has an elbow shape, and a transfer gate that is adjacent to at least two sides of the photodiode and has an elbow shape.

27. 发明授权

US09929194B2 Image sensor including vertical transfer gate 有权
公开(公告)号：US09929194B2
公开(公告)日：2018-03-27
申请号：US15446775
申请日：2017-03-01
申请人： SK hynix Inc.
发明人： Yun-Hui Yang , Pyong-Su Kwag , Young-Jun Kwon , Min-Ki Na , Sung-Kun Park , Donghyun Woo , Cha-Young Lee , Ho-Ryeong Lee
IPC分类号： H01L31/102 , H01L27/146 , H01L29/04 , H01L29/16 , H01L29/51 , H01L29/78
CPC分类号： H01L27/14614 , H01L27/14609 , H01L27/1461 , H01L27/14616 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14689 , H01L29/04 , H01L29/16 , H01L29/511 , H01L29/7827
摘要： An image sensor includes a photoelectric conversion element including a first impurity region and a second impurity region, wherein the first impurity region contacts a first surface of a substrate, wherein the second impurity region has conductivity complementary to the first impurity region and is formed in the substrate and below the first impurity region; a pillar formed over the photoelectric conversion element; a transfer gate formed over the photoelectric conversion element to surround the pillar; and a channel layer formed between the transfer gate and the pillar and contacting the photoelectric conversion element, wherein the channel layer contacts the first impurity region and has the same conductivity as the second impurity region.

28. 发明授权

US09337287B2 Non-volatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US09337287B2
公开(公告)日：2016-05-10
申请号：US14135141
申请日：2013-12-19
申请人： SK hynix Inc.
发明人： Sung-Kun Park
IPC分类号： H01L29/788 , H01L29/423 , H01L27/115
CPC分类号： H01L29/42328 , H01L27/11521 , H01L29/7881
摘要： A non-volatile memory device includes an isolation layer formed over a substrate to define an active region, a floating gate formed over the substrate, a selection gate formed over the substrate on one side of the floating gate and formed to be adjacent to the floating gate with a first gap from the floating gate, a control plug formed over the isolation layer on the other side of the floating gate and formed to be adjacent to the floating gate with a second gap from the floating gate, and a charge blocking layer formed to gap-fill the first gap and the second gap.
摘要翻译：非易失性存储器件包括形成在衬底上以限定有源区的隔离层，形成在衬底上的浮栅;选择栅极，形成在浮置栅极的一侧上的衬底上并形成为与浮置栅极相邻栅极，其与浮置栅极具有第一间隙，控制插塞形成在浮置栅极的另一侧上的隔离层上方并且与浮置栅极相邻并且与浮置栅极具有第二间隙，并形成电荷阻挡层以填补第一个间隙和第二个间隙。

29. 发明授权

US09070781B2 Nonvolatile memory device and method for fabricating the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US09070781B2
公开(公告)日：2015-06-30
申请号：US13873681
申请日：2013-04-30
申请人： SK hynix Inc.
发明人： Sung-Kun Park
IPC分类号： H01L29/788 , H01L27/115 , H01L29/423 , H01L27/092
CPC分类号： H01L27/11517 , H01L27/092 , H01L27/11519 , H01L27/11521 , H01L27/11541 , H01L27/11546 , H01L27/11558 , H01L29/42324 , H01L29/7881 , H01L29/7884
摘要： A nonvolatile memory device includes a floating gate formed over a substrate; a contact plug formed on a first side of the floating gate and disposed parallel to the floating gate with a gap defined therebetween; and a spacer formed on a sidewall of the floating gate and filling the gap, wherein the contact plug and the floating gate have a sufficiently large overlapping area to enable the contact plug to operate as a control gate for the floating gate.
摘要翻译：非易失性存储器件包括形成在衬底上的浮动栅极; 接触插塞，其形成在所述浮动栅极的第一侧上并且平行于所述浮动栅极间隔开间隙; 以及形成在所述浮动栅极的侧壁上并填充所述间隙的间隔件，其中所述接触插塞和所述浮动栅极具有足够大的重叠区域，以使所述接触插头能够用作所述浮动栅极的控制栅极。

30. 发明授权

US09054175B2 Nonvolatile memory device including select gate and memory gate 有权
标题翻译：包括选择门和存储器门的非易失性存储器件
公开(公告)号：US09054175B2
公开(公告)日：2015-06-09
申请号：US13954499
申请日：2013-07-30
申请人： SK hynix Inc.
发明人： Sung-Kun Park
IPC分类号： H01L29/76 , H01L29/78
CPC分类号： H01L29/78 , H01L21/28282 , H01L27/11568 , H01L29/42344 , H01L29/66833 , H01L29/792
摘要： A nonvolatile memory device includes a gate structure including a select gate formed over a substrate and a memory gate formed on one sidewall of the select gate and having a P-type channel, a drain region formed in the substrate at one sidewall of the gate structure and overlapping a part of the memory gate, and a source region formed in the substrate at the other sidewall of the gate structure and overlapping a part of the select gate. The memory gates include a grid of rows and columns with bits of 1's and 0's selectively forming a memory in a nonvolatile memory device.
摘要翻译：非易失性存储器件包括栅极结构，其包括形成在衬底上的选择栅极和形成在选择栅极的一个侧壁上并具有P型沟道的存储栅极，在栅极结构的一个侧壁处形成在衬底中的漏极区域并且与所述存储栅极的一部分重叠，以及在所述栅极结构的另一个侧壁处形成在所述衬底中并与所述选择栅极的一部分重叠的源极区域。存储器门包括具有位1和0的行和列的网格，其选择性地在非易失性存储器件中形成存储器。

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