会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 25. 发明授权
    • Pulsed energy synthesis and doping of silicon carbide
    • 脉冲能量合成和掺杂碳化硅
    • US5425860A
    • 1995-06-20
    • US43820
    • 1993-04-07
    • Joel B. TruherJames L. KaschmitterJesse B. ThompsonThomas W. Sigmon
    • Joel B. TruherJames L. KaschmitterJesse B. ThompsonThomas W. Sigmon
    • C23C14/06C23C14/58C23C14/34
    • C23C14/5813C23C14/0635C23C14/58C23C14/5846
    • A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.
    • 通过将非晶硅和碳的薄膜共沉积到衬底上来生产β碳化硅薄膜的方法,然后通过暴露于脉冲能量源(例如准分子激光器)照射膜以引起β-SiC化合物的形成 。 可以通过在照射期间引入掺杂气体来产生掺杂的β-SiC。 已经生产了厚度为0.5-1微米的单层,其中较厚的层通过多个处理步骤产生。 由于β碳化硅在27°-730℃的宽温度范围内的电子传输性能优于α碳化硅的这些性能,因此它们具有广泛的应用,例如在高温半导体中,包括异质结双极晶体管 和功率器件,以及高带隙太阳能电池阵列,超硬涂层,发光二极管,传感器等。