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    • 24. 发明授权
    • Optical bypass switch
    • 光旁路开关
    • US4478494A
    • 1984-10-23
    • US322820
    • 1981-11-19
    • Richard A. Soref
    • Richard A. Soref
    • G02F1/31G02F1/13G02F1/1333H04B10/213G02F1/133
    • G02F1/1326
    • The 2.times.2 bypass switch utilizes a single polarizing beam splitter and a 90.degree. polarization twist layer of liquid crystal held between two right angle prisms. The outer surfaces of the prisms provide a series of total internal reflections to direct light about the switch so that a single polarizing beam splitter may be employed to divide an incident beam into two counter-rotating orthogonally polarized beams and to recombine the beam at the switch selective output port. A compound switch is realized by double folding the optical path in two parallel planes in one embodiment and along parallel paths in the incident plane in another embodiment.
    • 2x2旁路开关利用单个偏振分束器和保持在两个直角棱镜之间的液晶的90°极化扭转层。 棱镜的外表面提供一系列全内反射以引导围绕开关的光,使得可以采用单个偏振分束器将入射光束分成两个反向旋转的正交偏振光束,并将光束在开关处重新组合 选择性输出端口 在另一个实施例中,在一个实施例中,通过在两个平行平面中双折叠光路并且沿入射平面中的平行路径实现复合开关。
    • 27. 发明授权
    • Semiconductor photonoic nano communication link method
    • 半导体光子纳米通信链路方法
    • US07907848B1
    • 2011-03-15
    • US11801767
    • 2007-04-30
    • Richard A. Soref
    • Richard A. Soref
    • H04B10/00
    • H04B10/25H04B10/801
    • An optical signal low energy method for coupling electrical signals on-chip between component circuits of for example a CMOS circuit array. The described coupling method employs infrared signals communicated along a nano-scale resonant semiconductor waveguide between for example PIN diode signal transducers. The coupling may employ an electrically pumped laser, an electro absorption modulator and a photodetector all for typically the 1.5 to 2.0 micrometer spectral region with each formed using for example PIN heterodiode semiconductor devices. Each of these three devices includes active semiconductor crystal material situated in a resonator within a strip waveguide. The resonator is defined by two fabricated mirrors having a tapered location one dimensional photonic crystal lattice of oxide hole or slot apertures. Each semiconductor device is for example a heterodiode pumped or controlled by laterally disposed wings enclosing the resonator to form a lateral PIN structure for current injection or high E-field generation. CMOS compatible ten gigabit per second signals of low energy use per transmitted bit are achieved.
    • 一种用于耦合例如CMOS电路阵列的元件电路之间片上电信号的光信号低能法。 所描述的耦合方法使用在例如PIN二极管信号换能器之间沿着纳米级谐振半导体波导传送的红外信号。 耦合可以使用电泵浦激光器,电吸收调制器和光电检测器,所有这些都通常为1.5至2.0微米光谱区域,每个使用例如PIN异二极管半导体器件形成。 这三个器件中的每个器件包括位于条形波导内的谐振器中的有源半导体晶体材料。 谐振器由两个制造的反射镜限定,其具有锥形位置的一维光子晶格的氧化物孔或槽孔。 每个半导体器件例如是由侧向设置的翼片泵浦或控制的异二极管,其包围谐振器以形成用于电流注入或高电场产生的侧向PIN结构。 实现了CMOS兼容的每千兆位每秒传输比特低的能量信号。