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21. 发明授权

US5360693A Positive o-quinone diazide photoresist containing base copolymer utilizing monomer having anhydride function and further monomer that increases etch resistance 失效
标题翻译：含邻苯醌二叠氮化物光致抗蚀剂含有具有酸酐官能团的单体的基础共聚物和增加耐蚀性的其它单体
公开(公告)号：US5360693A
公开(公告)日：1994-11-01
申请号：US59518
申请日：1993-05-10
申请人： Michael Sebald , Recai Sezi , Rainer Leuschner , Seigfried Birkle , Hellmut Ahhe
发明人： Michael Sebald , Recai Sezi , Rainer Leuschner , Seigfried Birkle , Hellmut Ahhe
IPC分类号： G03F7/023 , G03F7/075 , G03F15/06
CPC分类号： G03F7/0233 , G03F7/0758
摘要： An aqueous-alkaline developable photoresist suitable for a lithography in deep ultraviolet light and having a structural resolution in the sub-.mu.m range. The photoresist contains a developable base polymer that comprises anhydride functions that act as solubility-mediating groups and also contains a photo-active component. In addition to being constructed of monomers carrying anhydride groups, the base polymer can be constructed of further monomers that produce designationally defined properties in the photoresist, for example, exhibit resistance to plasma etching processes. The photoresist of the present invention is therefore very versatile.
摘要翻译：一种含水碱性可显影光致抗蚀剂，适用于深紫外光下的平版印刷，其结构分辨率在多个范围之内。光致抗蚀剂包含可显影的基础聚合物，其包含作为溶解介导基团并且还含有光活性组分的酸酐官能团。除了由负载酸酐基团的单体构成之外，基础聚合物可以由在光致抗蚀剂中产生指定性质的其它单体构成，例如显示出对等离子体蚀刻工艺的抗性。因此，本发明的光刻胶是非常通用的。

22. 发明授权

US5234794A Photostructuring method 失效
标题翻译：光结构方法
公开(公告)号：US5234794A
公开(公告)日：1993-08-10
申请号：US847881
申请日：1992-03-10
申请人： Michael Sebald , Rainer Leuschner , Recai Sezi , Siegfried Birkle , Hellmut Ahne
发明人： Michael Sebald , Rainer Leuschner , Recai Sezi , Siegfried Birkle , Hellmut Ahne
IPC分类号： G03F7/40
CPC分类号： G03F7/405 , G03F7/40
摘要： A simple method for diminishing the trench width in a photoresist structure to below the resolution limit is provided. A photoresist structure is produced and treated with an agent then contains a bulging constituent that reacts with functional groups of the photoresist structure. The bulging constituent causes a volume increase of the photoresist structure. The extent of the volume increase of the photoresist structures is controllable by varying various parameters.
摘要翻译：提供了一种用于将光致抗蚀剂结构中的沟槽宽度减小到分辨率极限以下的简单方法。制备光致抗蚀剂结构并用试剂处理，然后含有与光致抗蚀剂结构的官能团反应的凸起成分。凸起成分导致光致抗蚀剂结构的体积增加。通过改变各种参数可以控制光致抗蚀剂结构体积增加的程度。

23. 发明申请

US20140357075A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20140357075A1
公开(公告)日：2014-12-04
申请号：US14461222
申请日：2014-08-15
申请人： Thorsten Meyer , Recai Sezi , Markus Brunnbauer
发明人： Thorsten Meyer , Recai Sezi , Markus Brunnbauer
IPC分类号： H01L23/00
CPC分类号： H01L24/11 , H01L24/27 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05026 , H01L2224/05124 , H01L2224/05548 , H01L2224/05569 , H01L2224/116 , H01L2224/1183 , H01L2224/13099 , H01L2224/16 , H01L2224/27462 , H01L2224/73104 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01074 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/14 , H01L2924/00014
摘要： A semiconductor device includes a semiconductor chip and a metal layer electrically coupled to the semiconductor chip. The semiconductor device includes an array of solder balls coupled to the metal layer and a front side protect material directly contacting the metal layer and laterally surrounding a portion of at least a plurality of solder balls. The front side protect material is configured to become fluid during solder reflow.
摘要翻译：半导体器件包括电连接到半导体芯片的半导体芯片和金属层。半导体器件包括耦合到金属层的焊料球阵列和直接接触金属层并横向围绕至少多个焊球的一部分的前侧保护材料。正面保护材料配置成在回流焊时成为流体。

24. 发明授权

US07952200B2 Semiconductor device including a copolymer layer 有权
标题翻译：包括共聚物层的半导体装置
公开(公告)号：US07952200B2
公开(公告)日：2011-05-31
申请号：US12174155
申请日：2008-07-16
申请人： Thorsten Meyer , Recai Sezi
发明人： Thorsten Meyer , Recai Sezi
IPC分类号： H01L23/48
CPC分类号： H01L24/96 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L24/19 , H01L2224/04105 , H01L2224/12105 , H01L2224/20 , H01L2924/01013 , H01L2924/01029 , H01L2924/01047 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/14 , H01L2924/15174 , H01L2924/15311 , H01L2924/181 , H01L2924/3511 , H01L2924/00
摘要： A semiconductor device including a chip including an integrated circuit, a conductive layer, a copolymer layer and metal elements. The conductive layer is disposed over the chip and electrically coupled to the integrated circuit. The copolymer is disposed on the conductive layer. The metal elements are electrically coupled to the conductive layer via through-connects in the copolymer layer.
摘要翻译：一种包括集成电路，导电层，共聚物层和金属元素的芯片的半导体器件。导电层设置在芯片上并电耦合到集成电路。共聚物设置在导电层上。金属元件通过共聚物层中的通孔电耦合到导电层。

25. 发明授权

US07746683B2 NOR and NAND memory arrangement of resistive memory elements 有权
标题翻译： NOR和NAND存储器布置的电阻存储器元件
公开(公告)号：US07746683B2
公开(公告)日：2010-06-29
申请号：US11737236
申请日：2007-04-19
申请人： Kurt Hoffmann , Christine Dehm , Recai Sezi , Andreas Walter
发明人： Kurt Hoffmann , Christine Dehm , Recai Sezi , Andreas Walter
IPC分类号： G11C11/00
CPC分类号： G11C13/003 , B82Y10/00 , G11C13/0004 , G11C13/0014 , G11C13/0016 , G11C13/0019 , G11C2213/15 , G11C2213/75 , G11C2213/79
摘要： A memory arrangement includes: a first line for applying a reference voltage, a second line for applying an operating voltage, and a plurality of resistive memory elements, each element includes a resistive memory cell and a MOS memory cell selection transistor. A NOR memory arrangement is configured with each memory element including the resistive memory cell and selection transistor connected in series with the transistor connected to the first line, and the memory cell connected to the second line. A NAND memory arrangement is configured with a series of resistive memory elements forming a chain with each memory element including the resistive memory cell and selection transistor connected in parallel. The chain is connected to the first line disposed on a side of the memory cells facing the selection transistors and the second line disposed on a side of the memory cells which is remote from the selection transistors.
摘要翻译：存储器装置包括：用于施加参考电压的第一线，用于施加工作电压的第二线和多个电阻性存储器元件，每个元件包括电阻存储器单元和MOS存储单元选择晶体管。 NOR存储器配置配置有每个存储器元件，其包括与连接到第一线路的晶体管串联连接的电阻存储器单元和选择晶体管，以及连接到第二线路的存储器单元。 NAND存储器配置配置有一系列形成链的电阻存储元件，每个存储元件包括并联连接的电阻存储单元和选择晶体管。链条连接到布置在面向选择晶体管的存储单元的一侧上的第一行，而第二行设置在远离选择晶体管的存储单元的一侧。

26. 发明授权

US07070904B2 Polybenzoxazoles from poly-o-hydroxyamide, novel poly-o-hydroxyamides, preparation processes therefor, and their application in microelectronics 失效
公开(公告)号：US07070904B2
公开(公告)日：2006-07-04
申请号：US10244802
申请日：2002-09-16
申请人： Recai Sezi
发明人： Recai Sezi
IPC分类号： G03F7/004
CPC分类号： C08G73/22 , C08G73/00 , G03F7/0392
摘要： High-temperature-stable polybenzoxazoles are formed from novel poly-o-hydroxyamides. The novel poly-o-hydroxyamides have low dielectric constants, are suitable for exposure at 248 nm or shorter wavelengths, and have hydroxyl groups at least some of which have been protected by tert-butoxycarbonyl protective groups.

27. 发明授权

US07064176B2 Coating material for electronic components 失效
标题翻译：电子元器件涂料
公开(公告)号：US07064176B2
公开(公告)日：2006-06-20
申请号：US10472772
申请日：2002-03-28
申请人： Marcus Halik , Klaus Lowack , Recai Sezi , Andreas Walter
发明人： Marcus Halik , Klaus Lowack , Recai Sezi , Andreas Walter
IPC分类号： C08G73/22 , C08G69/00
CPC分类号： H01B3/305 , C08G69/26 , C08G69/265 , C08G69/32 , C08G73/22
摘要： The invention relates to novel polyhydroxyamide compounds that, in the form of their oxazoles, ane suited as a coating material, particularly for electronic components. The invention also relates to a method for producing these novel compounds and to the use thereof.
摘要翻译：本发明涉及新颖的聚羟基酰胺化合物，其以其恶唑的形式，适合作为涂料，特别是电子组件。本发明还涉及这些新化合物的制备方法及其用途。

28. 发明申请

US20050203269A1 Dicarboxylic acids for dielectrics having barrier effect against copper diffusion 审中-公开
标题翻译：对铜扩散具有阻挡作用的电介质的二羧酸
公开(公告)号：US20050203269A1
公开(公告)日：2005-09-15
申请号：US11016900
申请日：2004-12-21
申请人： Andreas Walter , Recai Sezi
发明人： Andreas Walter , Recai Sezi
IPC分类号： C07C51/09 , C07C51/245 , C07C51/60 , C07C63/46 , C07C65/24 , C07C65/26 , C07D493/10 , C08G63/02 , H01L21/44
CPC分类号： C08G63/02 , C07C51/09 , C07C51/245 , C07C51/60 , C07C63/46 , C07C65/24 , C07C65/26 , C07C2603/74 , C07D493/10 , H01L21/44 , C07C63/44
摘要： Novel dicarboxylic acids are described herein that are suitable for the preparation of high-temperature-stable polymers, which are particularly useful in forming suitable dielectrics in microelectronics.
摘要翻译：本文描述了适用于制备高温稳定聚合物的新型二羧酸，其特别可用于在微电子学中形成合适的电介质。

29. 发明授权

US06905726B2 Component having at least two mutually adjacent insulating layers and corresponding production method 失效
标题翻译：具有至少两个相互相邻的绝缘层的组分和相应的制备方法
公开(公告)号：US06905726B2
公开(公告)日：2005-06-14
申请号：US09817967
申请日：2001-03-27
申请人： Klaus Lowack , Günter Schmid , Recai Sezi
发明人： Klaus Lowack , Günter Schmid , Recai Sezi
IPC分类号： C23C26/00 , C23C28/00 , H01L21/768 , H01L23/498 , H01L23/532 , B05D3/04
CPC分类号： H01L21/76871 , C23C26/00 , C23C28/00 , H01L21/76826 , H01L23/49894 , H01L23/5329 , H01L2924/0002 , Y10T428/24942 , H01L2924/00
摘要： The invention relates to a component having two adjacent insulating layers and to a production process therefore. The component has an activated insulating layer, which can be converted into an electrically conductive layer by metallization.
摘要翻译：本发明涉及一种具有两个相邻绝缘层的部件及其制造方法。该组件具有激活的绝缘层，其可以通过金属化转换成导电层。

30. 发明授权

US06884567B2 Photosensitive formulation for buffer coatings, film containing the photosensitive formulation, and method for fabricating electronics with the photosensitive formulation 失效
标题翻译：用于缓冲涂料的光敏剂，含有光敏剂的薄膜，以及用光敏剂制备电子学方法
公开(公告)号：US06884567B2
公开(公告)日：2005-04-26
申请号：US10244257
申请日：2002-09-16
申请人： Recai Sezi
发明人： Recai Sezi
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0387
摘要： A photosensitive formulation for high-temperature-resistant photoresists is based on polyhydroxyamides. The photosensitive formulations display a much higher photosensitivity than the comparable formulations based on quinone azide photoactive components. After conversion to the polybenzoxazole, the novel formulations also display a lower dielectric constant than the quinone azide-based formulations. A film can be made by applying the photosensitive formulation to a wafer and then evaporating the solvent. A method for fabricating electronics and micorelectronics structures a wafer by using the film in photolithography.
摘要翻译：用于耐高温光致抗蚀剂的光敏剂是基于聚羟基酰胺。与基于醌叠氮化物光活性组分的可比配方相比，光敏剂具有高得多的光敏性。转化成聚苯并恶唑后，新型配方也显示比基于叠氮化物的配方更低的介电常数。可以通过将光敏剂配制到晶片上然后蒸发溶剂来制备薄膜。用于制造电子学和微电子学的方法通过在光刻中使用该薄膜来构造晶片。

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