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21. 发明授权

US07579261B2 Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers 有权
标题翻译：外延涂覆的硅片及其制造外延硅片的方法
公开(公告)号：US07579261B2
公开(公告)日：2009-08-25
申请号：US11521846
申请日：2006-09-15
申请人： Reinhard Schauer , Norbert Werner
发明人： Reinhard Schauer , Norbert Werner
IPC分类号： H01L2/01
CPC分类号： C30B25/02 , C30B29/06 , H01L21/02381 , H01L21/0243 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/3065 , Y10S438/905
摘要： A multiplicity of silicon wafers polished at least on their front sides are provided and successively coated individually in an epitaxy reactor by a procedure whereby one of the wafers is placed on a susceptor in the epitaxy reactor, is pretreated under a hydrogen atmosphere at a first hydrogen flow rate, and with addition of an etching medium to the hydrogen atmosphere at a reduced hydrogen flow rate in a second step, is subsequently coated epitaxially on its polished front side, and removed from the reactor. An etching treatment of the susceptor follows a specific number of epitaxial coatings. Silicon wafers produced thereby have a global flatness value GBIR of 0.07-0.3 μm relative to an edge exclusion of 2 mm.
摘要翻译：提供了至少在其前侧抛光的多个硅晶片，并且通过将晶片中的一个放置在外延反应器中的基座上的步骤，在外延反应器中单独连续地涂覆，在氢气氛下在第一氢随后在第二步骤中以降低的氢气流量向氢气气氛中添加蚀刻介质，随后在其抛光的正面外延涂覆并从反应器中除去。感受器的蚀刻处理遵循特定数量的外延涂层。因此生产的硅片相对于2mm的边缘排除具有0.07-0.3μm的全局平坦度值GBIR。

22. 发明申请

US20080118712A1 Epitaxially coated semiconductor wafer and device and method for producing an epitaxially coated semiconductor wafer 有权
标题翻译：外延涂覆的半导体晶片以及用于制造外延涂覆的半导体晶片的器件和方法
公开(公告)号：US20080118712A1
公开(公告)日：2008-05-22
申请号：US11985092
申请日：2007-11-14
申请人： Reinhard Schauer , Norbert Werner
发明人： Reinhard Schauer , Norbert Werner
IPC分类号： B32B3/00 , C23C16/458 , H01L21/36
CPC分类号： H01L21/02579 , C23C16/4585 , C30B25/12 , H01L21/02381 , H01L21/02532 , H01L21/02634 , H01L21/68735 , Y10T428/24612
摘要： In a method for producing epitaxially coated semiconductor wafers, a multiplicity of prepared, front side-polished semiconductor wafers are successively coated individually with an epitaxial layer on their polished front sides at temperatures of 800-1200° C. in a reactor, while supporting the prepared semiconductor wafer over a susceptor having a gas-permeable structure, on a ring placed on the susceptor which acts as a thermal buffer between the susceptor and the supported semiconductor wafer, the semiconductor wafer resting on the ring, and its backside facing but not contacting the susceptor, so that gaseous substances are delivered from a region over the backside of the semiconductor wafer by gas diffusion through the susceptor into a region over the backside of the susceptor, the semiconductor wafer contacting the ring only in an edge region of its backside, wherein no stresses measurable by means of photoelastic stress measurement (“SIRD”) occur in the semiconductor wafer.
摘要翻译：在制造外延涂覆的半导体晶片的方法中，多个制备的正面抛光的半导体晶片在其抛光的前侧上在反应器中在800-1200℃的温度下分别独立地涂覆有外延层，同时支撑准备的半导体晶片在具有透气结构的基座上，位于基座上的环上，该基座用作基座和被支撑的半导体晶片之间的热缓冲器，半导体晶片位于环上，并且其背面面对但不接触使得气体物质通过气体通过基座通过基座的背面从半导体晶片的背面的区域传送到基座的背面上的区域中，半导体晶片仅在其背面的边缘区域接触环，其中在半导体晶片中不存在通过光弹性应力测量（“SIRD”）测量的应力。

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