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    • 29. 发明授权
    • Thin film ferroelectric light modulators
    • 薄膜铁电光调制器
    • US06211993B1
    • 2001-04-03
    • US09420475
    • 1999-10-19
    • Feiling WangGene H. Haertling
    • Feiling WangGene H. Haertling
    • G02F103
    • G02F1/21G02F1/055G02F1/19Y10T428/24942
    • A solid state device used to modulate the intensity of reflected or transmitted light by modulating with an external voltage the optical thickness of a thin film ferroelectric placed in an etalon cavity is disclosed. The device is constructed by selecting a generally planar supporting substrate, preferably silicon or sapphire in order to be compatible with silicon integrated circuits. A dielectric stack consisting of alternating layers of different index of refraction materials, also specifically selected to be compatible with later growth of the thin film ferroelectric, is deposited thereon to form a partially reflective and partially transmitting mirror, followed by a transparent electrically conductive layer. The thin film ferroelectric is deposited on the conductive layer, followed by a second transparent conductive layer and a second dielectric stack. Leads are connected to the conductive layers and in turn to a voltage generator. In one version of the invention, the functions of both the second (top) electrically conductive layer and dielectric stack are fulfilled by using a semi-transparent conducting film. In another version, the functions of both the first (bottom) electrically conductive layer and dielectric stack are also fulfilled by using a, preferably, highly reflective conducting film.
    • 公开了一种用于通过用外部电压调制放置在标准具腔中的薄膜铁电体的光学厚度来调制反射或透射光的强度的固态器件。 该器件通过选择大致平面的支撑衬底,优选硅或蓝宝石构成,以便与硅集成电路兼容。 由不同折射率材料的交替层组成的电介质叠层也被特别选择为与薄膜铁电体的后续生长兼容,以形成部分反射和部分透射的反射镜,随后是透明的导电层。 薄膜铁电体沉积在导电层上,随后是第二透明导电层和第二电介质叠层。 引线连接到导电层,然后连接到电压发生器。 在本发明的一个版本中,通过使用半透明导电膜来实现第二(顶部)导电层和电介质堆叠的功能。 在另一个版本中,第一(底部)导电层和电介质堆叠的功能也通过使用优选高反射导电膜来实现。