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21. 发明授权

US07994497B2 Poly[bis(ethynyl)heteroacene]s and electronic devices generated therefrom 有权
标题翻译：聚[双（乙炔基）异亚丙基]和由其生成的电子器件
公开(公告)号：US07994497B2
公开(公告)日：2011-08-09
申请号：US12253565
申请日：2008-10-17
申请人： Yuning Li , Ping Liu , Yiliang Wu , Beng S. Ong
发明人： Yuning Li , Ping Liu , Yiliang Wu , Beng S. Ong
IPC分类号： H01L51/00
CPC分类号： H01L51/0074 , H01L51/0036 , H01L51/0073 , H01L51/0545
摘要： An electronic device comprising a polymer of Formula or Structure (I) wherein R1 is hydrogen, halogen, a suitable hydrocarbon, or a heteroatom containing group; R2 is hydrogen, a suitable hydrocarbon, a heteroatom containing group, or a halogen; R3 and R4 are independently a suitable hydrocarbon, hydrogen, a heteroatom containing group, or a halogen; Ar is an aromatic component; x, y, a, b, and c represent the number of groups or rings, respectively; Z represents sulfur, oxygen, selenium, or NR wherein R is hydrogen, alkyl, or aryl; and n represents the number of repeating units.
摘要翻译：包含式（I）的聚合物的电子器件，其中R 1是氢，卤素，合适的烃或含杂原子的基团; R2是氢，适合的烃，含杂原子的基团或卤素; R 3和R 4独立地为合适的烃，氢，含杂原子的基团或卤素; Ar是芳香族成分; x，y，a，b和c分别表示基团或环的数目; Z表示硫，氧，硒或NR，其中R是氢，烷基或芳基; n表示重复单元的数量。

22. 发明授权

US07829727B2 Device containing compound having indolocarbazole moiety and divalent linkage 有权
标题翻译：含有吲哚并咔唑部分和二价键的化合物的装置
公开(公告)号：US07829727B2
公开(公告)日：2010-11-09
申请号：US11280795
申请日：2005-11-16
申请人： Yuning Li , Beng S. Ong , Yiliang Wu , Ping Liu
发明人： Yuning Li , Beng S. Ong , Yiliang Wu , Ping Liu
IPC分类号： C07D209/56
CPC分类号： C08G61/124 , C08G61/126
摘要： An electronic device including a compound comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.
摘要翻译：包括包含至少一种类型的任选取代的吲哚咔唑部分和至少一种二价键的化合物的电子器件。

23. 发明授权

US07573063B1 Organic thin film transistors 失效
标题翻译：有机薄膜晶体管
公开(公告)号：US07573063B1
公开(公告)日：2009-08-11
申请号：US12121148
申请日：2008-05-15
申请人： Ping Liu , Yiliang Wu , Yuning Li , Beng S. Ong
发明人： Ping Liu , Yiliang Wu , Yuning Li , Beng S. Ong
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L51/0537 , H01L51/0036 , H01L51/052 , H01L51/0541 , H01L51/0545
摘要： A thin film transistor having an improved gate dielectric layer is disclosed. The gate dielectric layer comprises a poly(4-vinylphenol-co-acrylonitrile) based polymer. The resulting gate dielectric layer has a high dielectric constant and can be crosslinked. Higher gate dielectric layer thicknesses can be used to prevent current leakage while still having a large capacitance for low operating voltages. Methods for producing such gate dielectric layers and/or thin film transistors comprising the same are also disclosed.
摘要翻译：公开了一种具有改进的栅介电层的薄膜晶体管。栅介电层包含聚（4-乙烯基苯酚 - 共 - 丙烯腈）聚合物。所得到的栅极介电层具有高的介电常数并可交联。可以使用更高的栅介质层厚度来防止电流泄漏，同时对于低工作电压仍然具有大的电容。还公开了用于制造这样的栅介质层和/或包括其的薄膜晶体管的方法。

24. 发明申请

US20090039344A1 POLY[BIS(ETHYNYL)HETEROACENE]S AND ELECTRONIC DEVICES GENERATED THEREFROM 有权
标题翻译： POLY [BIS（ETHYNYL）HETEROACENE] S及其生成的电子设备
公开(公告)号：US20090039344A1
公开(公告)日：2009-02-12
申请号：US12253565
申请日：2008-10-17
申请人： Yuning Li , Ping Liu , Yiliang Wu , Beng S. Ong
发明人： Yuning Li , Ping Liu , Yiliang Wu , Beng S. Ong
IPC分类号： H01L51/05 , C08G75/10
CPC分类号： H01L51/0074 , H01L51/0036 , H01L51/0073 , H01L51/0545
摘要： An electronic device comprising a polymer of Formula or Structure (I) wherein R1 is hydrogen, halogen, a suitable hydrocarbon, or a heteroatom containing group; R2 is hydrogen, a suitable hydrocarbon, a heteroatom containing group, or a halogen; R3 and R4 are independently a suitable hydrocarbon, hydrogen, a heteroatom containing group, or a halogen; Ar is an aromatic component; x, y, a, b, and c represent the number of groups or rings, respectively; Z represents sulfur, oxygen, selenium, or NR wherein R is hydrogen, alkyl, or aryl; and n represents the number of repeating units.
摘要翻译：包含式（I）的聚合物的电子器件，其中R 1是氢，卤素，合适的烃或含杂原子的基团; R2是氢，适合的烃，含杂原子的基团或卤素; R 3和R 4独立地为合适的烃，氢，含杂原子的基团或卤素; Ar是芳香族成分; x，y，a，b和c分别表示基团或环的数目; Z表示硫，氧，硒或NR，其中R是氢，烷基或芳基; n表示重复单元的数量。

25. 发明授权

US07425723B2 Organic thin-film transistors 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US07425723B2
公开(公告)日：2008-09-16
申请号：US11314687
申请日：2005-12-21
申请人： Beng S. Ong , Yuning Li , Yiliang Wu , Ping Liu
发明人： Beng S. Ong , Yuning Li , Yiliang Wu , Ping Liu
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L51/0035 , C08G61/12 , C08G73/026 , H01L51/0541 , H01L51/0545 , Y10T428/31504
摘要： An organic thin-film transistor has a p-type semiconducting layer, wherein the semiconducting layer comprises a crystalline conjugated polyarylamine of the chemical structure: wherein R1 through R5 are independently selected from hydrogen, alkyl having from about 1 to about 30 carbon atoms, aryl having from about 6 to about 40 carbon atoms, heteroaryl having from about 3 to about 40 atoms, alkoxy having from about 1 to about 30 carbon atoms, aryloxy having from about 6 to about 40 carbon atoms, and substituted derivatives thereof; wherein A and B are the same or different independently selected from arylenes having from about 6 to about 20 carbon atoms or heteroarylenes having from about 3 to about 20 carbon atoms; and wherein n is the degree of polymerization; and wherein the polyarylamine has a mobility (μ0) of 10−4 cm2/V·sec or greater.
摘要翻译：有机薄膜晶体管具有p型半导体层，其中半导体层包含化学结构的结晶共轭多芳基胺：其中R 1至R 5独立地为选自氢，具有约1至约30个碳原子的烷基，具有约6至约40个碳原子的芳基，具有约3至约40个原子的杂芳基，具有约1至约30个碳原子的烷氧基，具有约1至约30个碳原子的烷氧基，约6至约40个碳原子，及其取代衍生物; 其中A和B相同或不同，独立地选自具有约6至约20个碳原子的亚芳基或具有约3至约20个碳原子的杂芳基; 并且其中n是聚合度; 并且其中所述聚芳基胺具有10 -4平方厘米/秒/秒或更大的迁移率（μ-O）。

26. 发明申请

US20080207917A1 POLYMER HAVING INDOLOCARBAZOLE MOIETY AND DIVALENT LINKAGE 有权
标题翻译：具有吲哚卡拉唑环的聚合物和多相连接
公开(公告)号：US20080207917A1
公开(公告)日：2008-08-28
申请号：US12107508
申请日：2008-04-22
申请人： Yuning Li , Beng S. Ong , Yiliang Wu , Ping Liu
发明人： Yuning Li , Beng S. Ong , Yiliang Wu , Ping Liu
IPC分类号： C07D209/56
CPC分类号： H01L51/0036 , C07D487/04 , C08G61/124 , C08G61/126
摘要： A polymer comprising at least one type of repeat unit comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.
摘要翻译：包含至少一种类型的重复单元的聚合物，其包含至少一种类型的任选取代的吲哚咔唑部分和至少一种二价键。

27. 发明授权

US08222076B2 Fabricating amorphous zinc oxide semiconductor layer 有权
标题翻译：制造无定形氧化锌半导体层
公开(公告)号：US08222076B2
公开(公告)日：2012-07-17
申请号：US11498031
申请日：2006-08-02
申请人： Yiliang Wu , Yuning Li , Beng S. Ong
发明人： Yiliang Wu , Yuning Li , Beng S. Ong
IPC分类号： H01L21/16
CPC分类号： H01L29/7869
摘要： A process for fabricating a semiconductor layer of an electronic device including: liquid depositing one or more zinc oxide precursor compositions and forming at least one semiconductor layer of the electronic device comprising predominately amorphous zinc oxide from the liquid deposited one or more zinc oxide precursor compositions.
摘要翻译：一种用于制造电子器件的半导体层的方法，包括：液体沉积一种或多种氧化锌前体组合物并形成电子器件的至少一个半导体层，所述半导体层包含主要为无定形氧化锌的沉积的一种或多种氧化锌前体组合物。

28. 发明授权

US07402681B2 Compound with indolocarbazole moieties and devices containing such compound 有权
标题翻译：具有吲哚并咔唑部分的化合物和含有该化合物的装置
公开(公告)号：US07402681B2
公开(公告)日：2008-07-22
申请号：US11167512
申请日：2005-06-27
申请人： Beng S. Ong , Yu Qi , Yiliang Wu , Yuning Li
发明人： Beng S. Ong , Yu Qi , Yiliang Wu , Yuning Li
IPC分类号： C07D209/14 , C07D209/56
CPC分类号： H01L51/0072 , C07D487/04 , C07D487/14 , H01L51/0035 , H01L51/0068 , H01L51/0516 , H01L51/0541 , H01L51/0545
摘要： A compound composed of a plurality of optionally substituted indolocarbazole moieties which are the same or different from each other.
摘要翻译：由多个彼此相同或不同的任选取代的吲哚咔唑部分组成的化合物。

29. 发明授权

US08609867B2 Substituted indolocarbazoles 有权
标题翻译：取代的indolocarbazoles
公开(公告)号：US08609867B2
公开(公告)日：2013-12-17
申请号：US13366857
申请日：2012-02-06
申请人： Yiliang Wu , Beng S. Ong , Yu Qi , Yuning Li
发明人： Yiliang Wu , Beng S. Ong , Yu Qi , Yuning Li
IPC分类号： C07D487/04 , C07D487/14
CPC分类号： H01L51/0072 , H01L51/0067 , H01L51/0541
摘要： A substituted indolocarbazole comprising at least one optionally substituted thienyl.
摘要翻译：包含至少一个任选取代的噻吩基的取代的吲哚咔唑。

30. 发明授权

US08084765B2 Electronic device having a dielectric layer 有权
标题翻译：具有电介质层的电子器件
公开(公告)号：US08084765B2
公开(公告)日：2011-12-27
申请号：US11745308
申请日：2007-05-07
申请人： Yu Qi , Yiliang Wu , Yuning Li , Beng S. Ong
发明人： Yu Qi , Yiliang Wu , Yuning Li , Beng S. Ong
IPC分类号： H01L27/01 , B32B9/04 , C07F7/04 , C08F12/24 , C08G12/14 , C08K5/24
CPC分类号： H01L21/02126 , C08K5/5419 , C08K5/549 , C08L25/18 , C08L61/28 , H01L21/02118 , H01L21/3122 , H01L51/052 , Y10T428/31663
摘要： An electronic device, such as a thin film transistor, is disclosed having a dielectric layer formed from a composition comprising a compound having at least one phenol group and at least one group containing comprising silicon. The resulting dielectric layer has good electrical properties.
摘要翻译：公开了一种电子器件，例如薄膜晶体管，其具有由包括具有至少一个酚基的化合物和至少一个含有硅的基团的组合物形成的介电层。所得的电介质层具有良好的电性能。

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