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21. 发明授权

US07238553B1 Method of forming a high-voltage silicon controlled rectifier structure with improved punch through resistance 有权
标题翻译：形成具有改善的穿通电阻的高压可控硅整流器结构的方法
公开(公告)号：US07238553B1
公开(公告)日：2007-07-03
申请号：US11134911
申请日：2005-05-23
申请人： Vladislav Vashchenko , Andy Strachan , Peter J. Hopper , Philipp Lindorfer
发明人： Vladislav Vashchenko , Andy Strachan , Peter J. Hopper , Philipp Lindorfer
IPC分类号： H01L21/332
CPC分类号： H01L27/0248 , H01L29/7436
摘要： When a high-voltage, such as from an ESD pulse, is placed across a silicon controlled rectifier, which includes an NPN transistor and a PNP transistor that is connected to the NPN transistor, the likelihood of punch through occurring between two regions of the rectifier is substantially reduced by forming the emitter of one transistor adjacent to the tails of the sinker down region of the other transistor.
摘要翻译：当诸如ESD脉冲之类的高压被放置在包括NPN晶体管和连接到NPN晶体管的PNP晶体管的可控硅整流器上时，整流器的两个区域之间产生冲击的可能性通过形成一个晶体管的发射极，与另一个晶体管的下沉区域的尾部相邻。

22. 发明授权

US07105373B1 Vertical photodiode with heavily-doped regions of alternating conductivity types 有权
标题翻译：具有交替导电类型的重掺杂区域的垂直光电二极管
公开(公告)号：US07105373B1
公开(公告)日：2006-09-12
申请号：US10640963
申请日：2003-08-14
申请人： Peter J. Hopper , Philipp Lindorfer , Vladislav Vashchenko , Andy Strachan
发明人： Peter J. Hopper , Philipp Lindorfer , Vladislav Vashchenko , Andy Strachan
IPC分类号： H01L21/00
CPC分类号： H01L31/028 , H01L31/103 , Y02E10/547
摘要： A single junction interdigitated photodiode utilizes a stack of alternating highly doped first regions of a first conductivity type and highly doped second regions of a second conductivity type, which are formed below and contact the first regions, to collect photons. In addition, a highly doped sinker of a first conductivity type contacts each first region, and a highly doped sinker of a second conductivity type contacts each second region.
摘要翻译：单结交叉光电二极管利用第一导电类型的交替的高度掺杂的第一区域和第二导电类型的高度掺杂的第二区域的堆叠，其在下面形成并接触第一区域以收集光子。此外，第一导电类型的高掺杂沉降片接触每个第一区域，并且第二导电类型的高掺杂沉降片接触每个第二区域。

23. 发明授权

US07050314B1 LVTSCR charge pump converter circuit 有权
标题翻译： LVTSCR电荷泵转换电路
公开(公告)号：US07050314B1
公开(公告)日：2006-05-23
申请号：US10625961
申请日：2003-07-23
申请人： Vladislav Vashchenko , Peter J. Hopper , Yuri Mirgorodski , Philipp Lindorfer
发明人： Vladislav Vashchenko , Peter J. Hopper , Yuri Mirgorodski , Philipp Lindorfer
IPC分类号： H02M3/18
CPC分类号： H02M3/07
摘要： A charge pump circuit in which at least one of the switching elements takes the form of a LVTSCR. The switching on and off of the LVTSCRs may be achieved by making use of a pulsed input and relying on the triggering and holding voltages of the LVTSCRs to switch on and off.
摘要翻译：一种电荷泵电路，其中至少一个开关元件采取LVTSCR的形式。 LVTSCR的接通和断开可以通过使用脉冲输入并依靠LVTSCR的触发和保持电压来接通和关断来实现。

24. 发明授权

US06919588B1 High-voltage silicon controlled rectifier structure with improved punch through resistance 有权
标题翻译：高压可控硅整流器结构，具有改善的穿通电阻
公开(公告)号：US06919588B1
公开(公告)日：2005-07-19
申请号：US10650000
申请日：2003-08-27
申请人： Vladislav Vashchenko , Andy Strachan , Peter J. Hopper , Philipp Lindorfer
发明人： Vladislav Vashchenko , Andy Strachan , Peter J. Hopper , Philipp Lindorfer
IPC分类号： H01L27/02 , H01L29/74
CPC分类号： H01L27/0248 , H01L29/7436
摘要： When a high-voltage, such as from an ESD pulse, is placed across a silicon controlled rectifier, which includes an NPN transistor and a PNP transistor that is connected to the NPN transistor, the likelihood of punch through occurring between two regions of the rectifier is substantially reduced by forming the emitter of one transistor adjacent to the tails of the sinker down region of the other transistor.
摘要翻译：当诸如ESD脉冲之类的高压被放置在包括NPN晶体管和连接到NPN晶体管的PNP晶体管的可控硅整流器上时，整流器的两个区域之间产生冲击的可能性通过形成一个晶体管的发射极，与另一个晶体管的下沉区域的尾部相邻。

25. 发明授权

US06646318B1 Bandgap tuned vertical color imager cell 有权
标题翻译：带隙调谐垂直彩色成像器单元
公开(公告)号：US06646318B1
公开(公告)日：2003-11-11
申请号：US10219836
申请日：2002-08-15
申请人： Peter J. Hopper , Philipp Lindorfer
发明人： Peter J. Hopper , Philipp Lindorfer
IPC分类号： H01L31028
CPC分类号： H04N9/045 , H01L27/14647 , H04N5/3696
摘要： A combination of materials is used to form the photodiodes of a vertical color imager cell. The materials used to form the photodiodes have different band gaps that allow the photon absorption rates of the photodiodes to be adjusted. By adjusting the photon absorption rates, the sensitivities of the photodiodes and thereby the characteristics of the imager can be adjusted.
摘要翻译：使用材料的组合来形成垂直彩色成像器单元的光电二极管。用于形成光电二极管的材料具有不同的带隙，允许调整光电二极管的光子吸收速率。通过调整光子吸收率，可以调节光电二极管的灵敏度，从而调整成像器的特性。

26. 发明授权

US07479435B1 Method of forming a circuit having subsurface conductors 有权
标题翻译：形成具有地下导体的电路的方法
公开(公告)号：US07479435B1
公开(公告)日：2009-01-20
申请号：US11007565
申请日：2004-12-08
申请人： Peter J. Hopper , Vladislav Vashchenko , Philipp Lindorfer , Andy Strachan
发明人： Peter J. Hopper , Vladislav Vashchenko , Philipp Lindorfer , Andy Strachan
IPC分类号： H01L29/788
CPC分类号： H01L21/26586 , H01L21/2652 , H01L21/823418 , H01L27/088 , H01L29/0847
摘要： A MOS transistor and subsurface collectors can be formed by using a hard mask and precisely varying the implant angle, rotation, dose, and energy. In this case, a particular atomic species can be placed volumetrically in a required location under the hard mask. The dopant can be implanted to form sub-silicon volumes of arbitrary shapes, such as pipes, volumes, hemispheres, and interconnects.
摘要翻译：可以通过使用硬掩模并精确地改变植入角度，旋转，剂量和能量来形成MOS晶体管和地下收集器。在这种情况下，特定的原子物质可以体积地放置在硬掩模下的所需位置。可以将掺杂剂注入以形成任意形状的子硅体积，例如管道，体积，半球和互连。

27. 发明授权

US07394133B1 Dual direction ESD clamp based on snapback NMOS cell with embedded SCR 有权
标题翻译：基于具有嵌入式SCR的快速恢复NMOS单元的双向ESD钳位
公开(公告)号：US07394133B1
公开(公告)日：2008-07-01
申请号：US11216774
申请日：2005-08-31
申请人： Vladislav Vashchenko , Peter J. Hopper , Philipp Lindorfer
发明人： Vladislav Vashchenko , Peter J. Hopper , Philipp Lindorfer
IPC分类号： H01L29/72
CPC分类号： H01L27/0262 , H01L29/0692 , H01L29/7436 , H01L29/87
摘要： In an ESD protection structure, dual direction ESD protection is provided by forming an n-well isolation ring around an NMOS device so that the p-well in which the NMOS drain is formed is isolated from the underlying p-substrate by the n-well isolation ring. By forming the n-well isolation ring the p-n-p-n structure of an embedded SCR for reverse ESD protection is provided. The width of the n-well isolation ring and its spacing from the NMOS drain are adjusted to provide the desired SCR parameters.
摘要翻译：在ESD保护结构中，通过在NMOS器件周围形成n阱隔离环来提供双向ESD保护，使得形成NMOS漏极的p阱通过n阱与下面的p衬底隔离隔离环。通过形成n阱隔离环，提供了用于反向ESD保护的嵌入式SCR的p-n-p-n结构。调整n阱隔离环的宽度及其与NMOS漏极的间隔，以提供所需的SCR参数。

28. 发明授权

US07233521B1 Apparatus and method for storing analog information in EEPROM memory 有权
标题翻译：用于将模拟信息存储在EEPROM存储器中的装置和方法
公开(公告)号：US07233521B1
公开(公告)日：2007-06-19
申请号：US11078761
申请日：2005-03-11
申请人： Yuri Mirgorodski , Peter J. Hopper , Vladislav Vashshenco , Philipp Lindorfer
发明人： Yuri Mirgorodski , Peter J. Hopper , Vladislav Vashshenco , Philipp Lindorfer
IPC分类号： G11C11/34
CPC分类号： G11C27/005 , G11C11/5621 , G11C16/0441 , G11C16/10
摘要： A storage device that is capable of receiving an analog signal and storing it as a digital signal. The storage device includes an input node configured to receive an analog input voltage and two non-volatile storage cells. A second non-volatile memory cell is coupled to receive the analog input signal from the input node. The second non-volatile memory cell is capable of being programmed to a one of a plurality of programming states. The first non-volatile memory cell, which is coupled to the second non-volatile memory cell, is also capable of being programmed to one of a plurality of programming states. During operation, the second non-volatile memory cell and the first non-volatile memory cell are both programmed to a selected second programming state indicative of the magnitude of the analog input voltage. The first programming state and the second programming state are together are indicative of a digital value commensurate with the magnitude of the analog input voltage.
摘要翻译：一种能够接收模拟信号并将其存储为数字信号的存储装置。存储装置包括被配置为接收模拟输入电压的输入节点和两个非易失性存储单元。第二非易失性存储单元被耦合以从输入节点接收模拟输入信号。第二非易失性存储单元能够被编程为多个编程状态之一。耦合到第二非易失性存储单元的第一非易失性存储单元也能够被编程为多个编程状态之一。在操作期间，第二非易失性存储器单元和第一非易失性存储器单元都被编程为指示模拟输入电压的大小的选择的第二编程状态。第一编程状态和第二编程状态一起表示与模拟输入电压的大小相称的数字值。

29. 发明授权

US07218555B2 Imaging cell that has a long integration period and method of operating the imaging cell 有权
标题翻译：成像细胞具有长的积分期和操作成像细胞的方法
公开(公告)号：US07218555B2
公开(公告)日：2007-05-15
申请号：US11242094
申请日：2005-10-03
申请人： Peter J. Hopper , Philipp Lindorfer , Vladislav Vashchenko , Robert Drury
发明人： Peter J. Hopper , Philipp Lindorfer , Vladislav Vashchenko , Robert Drury
IPC分类号： G11C11/34 , H01L29/788
CPC分类号： H01L27/11526 , H01L27/115 , H01L27/11531 , H01L27/14603 , H01L27/14609
摘要： The integration period of an imaging cell, or the time that an imaging cell is exposed to light energy, is substantially increased by utilizing a single-poly, electrically-programmable, read-only-memory (EPROM) structure to capture the light energy. Photogenerated electrons are formed in the channel region of the EPROM structure from the light energy. The photogenerated electrons are then accelerated into having ionizing collisions which, in turn, leads to electrons being injected onto the floating gate of the EPROM structure at a rate that is proportionate to the number of photons captured by the channel region.
摘要翻译：成像单元的积分周期或成像单元暴露于光能的时间通过利用单聚电子可编程只读存储器（EPROM）结构捕获光能而大大增加。光能从EPROM结构的沟道区形成光电子。光生成的电子然后被加速成具有电离碰撞，其进而导致电子以与通道区域捕获的光子数成正比的速率注入到EPROM结构的浮动栅极上。

30. 发明授权

US07209503B1 Laser powered integrated circuit 有权
标题翻译：激光电源集成电路
公开(公告)号：US07209503B1
公开(公告)日：2007-04-24
申请号：US10838671
申请日：2004-05-03
申请人： Peter J. Hopper , Philipp Lindorfer , Vladislav Vashchenko , Yuri Mirgorodski
发明人： Peter J. Hopper , Philipp Lindorfer , Vladislav Vashchenko , Yuri Mirgorodski
IPC分类号： H01S5/00
CPC分类号： H01L27/1446 , H01L27/146
摘要： An integrated circuit is powered by exposing conductive regions, such as the p+ source regions of the PMOS transistors that are formed to receive a supply voltage, to light energy from a light source. The conductive regions function as photodiodes that produce voltages on the conductive regions via the photovoltaic effect.
摘要翻译：集成电路通过将形成为接收电源电压的PMOS晶体管的p +源极区域等导电区域暴露于来自光源的光能来供电。导电区域用作通过光电效应在导电区域上产生电压的光电二极管。

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