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21. 发明授权

US06379987B1 Method of manufacturing a hybrid integrated circuit comprising a semiconductor element and a piezoelectric filter 有权
标题翻译：包括半导体元件和压电滤波器的混合集成电路的制造方法
公开(公告)号：US06379987B1
公开(公告)日：2002-04-30
申请号：US09790346
申请日：2001-02-21
申请人： Ronald Dekker , Wilhelmus Mathias Clemens Dolmans , Lukas Leyten , Henricus Godefridus Rafael Maas
发明人： Ronald Dekker , Wilhelmus Mathias Clemens Dolmans , Lukas Leyten , Henricus Godefridus Rafael Maas
IPC分类号： H01L2100
CPC分类号： H03H3/02 , H03H9/0542
摘要： A method of manufacturing a hybrid integrated circuit comprising a semiconductor element (1) and a piezoelectric filter (2), which are situated next to each other and connected to a carrier substrate (3). The semiconductor element comprises semiconductor regions (5, 6) which are formed in a silicon layer (13, 28); the piezoelectric filter comprises an acoustic resonator (8, 9, 10) which is situated on an acoustic reflector layer (7), which acoustic resonator comprises a layer of piezoelectric material (8), a first electrode (9) situated between the layer of piezoelectric material and the acoustic reflector layer, and a second electrode (10) which is situated on the opposite side of the piezoelectric layer and faces the first electrode. In the method, the semiconductor element is formed on the first side (11) of a silicon wafer (12, 25). On the same side of this wafer, also the layer of piezoelectric material and the first electrode are formed, after which the surface is covered with the acoustic reflector layer. Subsequently, an adhesive layer (22) is used to attach the structure thus formed with the acoustic reflector layer to the carrier substrate. Finally, at the location of the filter, silicon is removed from the second side of the wafer, and the comparatively thick acoustic reflector need not be patterned so that underlying features cannot be damaged during etching said reflector layer.
摘要翻译：一种制造混合集成电路的方法，该混合集成电路包括彼此相邻并连接到载体衬底（3）的半导体元件（1）和压电滤波器（2）。半导体元件包括形成在硅层（13,28）中的半导体区域（5,6）。压电滤波器包括位于声反射器层（7）上的声共振器（8,9,10），该谐振器包括一层压电材料（8），第一电极（9）位于第压电材料和声反射器层，以及位于压电层的相对侧并面向第一电极的第二电极（10）。在该方法中，半导体元件形成在硅晶片（12,25）的第一侧（11）上。在该晶片的同一侧，形成压电材料层和第一电极，此后，表面被声反射层覆盖。随后，使用粘合剂层（22）将由此形成的结构与声反射器层附接到载体基板。最后，在滤光器的位置处，从晶片的第二侧去除硅，并且不需要对比较厚的声反射器进行图案化，使得在蚀刻所述反射器层期间底层特征不会被损坏。

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