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21. 发明申请

US20070088810A1 Apparatus, system, and method for mapping a storage environment 审中-公开
标题翻译：用于映射存储环境的设备，系统和方法
公开(公告)号：US20070088810A1
公开(公告)日：2007-04-19
申请号：US11253767
申请日：2005-10-19
申请人： Michael Lamb , David Merbach , Kavita Shah , Kevin Webster
发明人： Michael Lamb , David Merbach , Kavita Shah , Kevin Webster
IPC分类号： G06F15/173
CPC分类号： H04L67/1097 , G06F3/0605 , G06F3/0653 , G06F3/0664 , G06F3/067
摘要： An apparatus, system, and method are disclosed for mapping a storage environment. An identification module identifies a first controller defined storage unit. A test module tests for a second controller defined storage unit corresponding to the first controller defined storage unit. In one embodiment, the second controller defined storage unit is a virtualized instance of the first controller defined storage unit. In an alternate embodiment, the first controller defined storage unit is a virtualized instance of the second controller defined storage unit. A flag module flags the first controller defined storage unit if there is a second controller defined storage unit corresponding to the first controller defined storage unit. In one embodiment, a monitor module monitors the status of each unflagged defined storage unit in the storage environment. In addition, a report module may report the status of each unflagged defined storage unit.
摘要翻译：公开了用于映射存储环境的装置，系统和方法。识别模块识别第一控制器定义的存储单元。测试模块测试对应于第一控制器定义的存储单元的第二控制器定义的存储单元。在一个实施例中，第二控制器定义的存储单元是第一控制器定义的存储单元的虚拟化实例。在替代实施例中，第一控制器定义的存储单元是第二控制器定义的存储单元的虚拟化实例。如果存在与第一控制器定义的存储单元对应的第二控制器定义的存储单元，则标志模块标记第一控制器定义的存储单元。在一个实施例中，监视器模块监视存储环境中每个未标定的定义的存储单元的状态。此外，报告模块可以报告每个未标定的定义的存储单元的状态。

22. 发明授权

US08927423B2 Methods for annealing a contact metal layer to form a metal silicidation layer 有权
标题翻译：退火接触金属层以形成金属硅化层的方法
公开(公告)号：US08927423B2
公开(公告)日：2015-01-06
申请号：US13714588
申请日：2012-12-14
申请人： Xinyu Fu , Wei Tang , Kavita Shah , Srinivas Gandikota , San H. Yu , Avgerinos Gelatos
发明人： Xinyu Fu , Wei Tang , Kavita Shah , Srinivas Gandikota , San H. Yu , Avgerinos Gelatos
IPC分类号： H01L21/44 , H01L29/40
CPC分类号： H01L29/401 , H01L21/28052
摘要： Methods for annealing a contact metal layer for a metal silicidation process are provided in the present invention. In one embodiment, a method for annealing a contact metal layer for a silicidation process in a semiconductor device includes providing a substrate having a contact metal layer disposed thereon in a thermal annealing processing chamber, providing a heat energy to the contact metal layer in the thermal processing chamber, supplying a gas mixture including a nitrogen gas and a hydrogen gas while providing the heat energy to the contact layer in the thermal processing chamber, wherein the nitrogen gas and the hydrogen gas is supplied at a ratio between about 1:10 and about 1:1, and forming a metal silicide layer on the substrate.
摘要翻译：在本发明中提供了用于退火金属硅化工艺的接触金属层的方法。在一个实施例中，一种用于对半导体器件中的硅化工艺的接触金属层进行退火的方法包括：在热退火处理室中提供其上设置有接触金属层的基板，在该热退火处理室中向该接触金属层提供热能处理室，供给包括氮气和氢气的气体混合物，同时向热处理室中的接触层提供热能，其中氮气和氢气以约1:10和约 1：1，并在衬底上形成金属硅化物层。

23. 发明申请

US20100129535A1 Vapor Deposition Processes for Tantalum Carbide Nitride Materials 失效
标题翻译：钽硬质合金材料的气相沉积工艺
公开(公告)号：US20100129535A1
公开(公告)日：2010-05-27
申请号：US12699271
申请日：2010-02-03
申请人： Kavita Shah , Haichun Yang , Schubert S. Chu
发明人： Kavita Shah , Haichun Yang , Schubert S. Chu
IPC分类号： B05D5/12
CPC分类号： C23C16/36 , C04B35/58007 , C04B35/6325 , H01L21/28202 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L29/518 , H01L29/78
摘要： Embodiments of the invention generally provide methods for depositing and compositions of tantalum carbide nitride materials. The methods include deposition processes that form predetermined compositions of the tantalum carbide nitride material by controlling the deposition temperature and the flow rate of a nitrogen-containing gas during a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating the substrate to a temperature within a process chamber, and exposing the substrate to a nitrogen-containing gas and a process gas containing a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate. The method further provides that the tantalum carbide nitride material is crystalline and contains interstitial carbon and elemental carbon having an interstitial/elemental carbon atomic ratio of greater than 1, such as about 2, 3, 4, or greater.
摘要翻译：本发明的实施方案通常提供了用于沉积碳化钽和氮化钽材料的组合物的方法。这些方法包括通过控制包括热分解，CVD，脉冲CVD或ALD在内的气相沉积工艺中的含氮气体的沉积温度和流速来形成碳化钽氮化物材料的预定组成的沉积工艺。在一个实施例中，提供了一种在衬底上形成含钽材料的方法，其包括将衬底加热到处理室内的温度，并将衬底暴露于含氮气体和含有钽前体气体的工艺气体同时在衬底上沉积碳化钽氮化物材料。该方法进一步提供了碳化钽氮化物材料是结晶的并且含有间隙碳和元素间碳/元素碳原子比大于1，例如约2,3,4或更大的元素碳。

24. 发明申请

US20090081868A1 VAPOR DEPOSITION PROCESSES FOR TANTALUM CARBIDE NITRIDE MATERIALS 有权
标题翻译：碳酸氮化物材料的蒸气沉积工艺
公开(公告)号：US20090081868A1
公开(公告)日：2009-03-26
申请号：US11860945
申请日：2007-09-25
申请人： Kavita Shah , Haichun Yang , Schubert S. Chu
发明人： Kavita Shah , Haichun Yang , Schubert S. Chu
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/36 , C23C16/45525 , C23C16/45542 , H01L21/28556 , H01L21/28562
摘要： Embodiments of the invention generally provide methods for depositing and compositions of tantalum carbide nitride materials. The methods include deposition processes that form predetermined compositions of the tantalum carbide nitride material by controlling the deposition temperature and the flow rate of a nitrogen-containing gas during a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating the substrate to a temperature within a process chamber, and exposing the substrate to a nitrogen-containing gas and a process gas containing a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate. The method further provides that the tantalum carbide nitride material is crystalline and contains interstitial carbon and elemental carbon having an interstitial/elemental carbon atomic ratio of greater than 1, such as about 2, 3, 4, or greater.
摘要翻译：本发明的实施方案通常提供了用于沉积碳化钽和氮化钽材料的组合物的方法。这些方法包括通过控制包括热分解，CVD，脉冲CVD或ALD在内的气相沉积工艺中的含氮气体的沉积温度和流速来形成碳化钽氮化物材料的预定组成的沉积工艺。在一个实施例中，提供了一种在衬底上形成含钽材料的方法，其包括将衬底加热到处理室内的温度，并将衬底暴露于含氮气体和含有钽前体气体的工艺气体同时在衬底上沉积碳化钽氮化物材料。该方法进一步提供了碳化钽氮化物材料是结晶的并且含有间隙碳和元素间碳/元素碳原子比大于1，例如约2,3,4或更大的元素碳。

25. 发明申请

US20130157460A1 METHODS FOR ANNEALING A METAL CONTACT LAYER TO FORM A METAL SILICIDATION LAYER 有权
标题翻译：用于退火金属接触层以形成金属硅酸盐层的方法
公开(公告)号：US20130157460A1
公开(公告)日：2013-06-20
申请号：US13714588
申请日：2012-12-14
申请人： Xinyu Fu , Wei Tang , Kavita Shah , Srinivas Gandikota , San H. Yu , Avgerinos Gelatos
发明人： Xinyu Fu , Wei Tang , Kavita Shah , Srinivas Gandikota , San H. Yu , Avgerinos Gelatos
IPC分类号： H01L29/40
CPC分类号： H01L29/401 , H01L21/28052
摘要： Methods for annealing a contact metal layer for a metal silicidation process are provided in the present invention. In one embodiment, a method for annealing a contact metal layer for a silicidation process in a semiconductor device includes providing a substrate having a contact metal layer disposed thereon in a thermal annealing processing chamber, providing a heat energy to the contact metal layer in the thermal processing chamber, supplying a gas mixture including a nitrogen gas and a hydrogen gas while providing the heat energy to the contact layer in the thermal processing chamber, wherein the nitrogen gas and the hydrogen gas is supplied at a ratio between about 1:10 and about 1:1, and forming a metal silicide layer on the substrate.
摘要翻译：在本发明中提供了用于退火金属硅化工艺的接触金属层的方法。在一个实施例中，一种用于对半导体器件中的硅化工艺的接触金属层进行退火的方法包括：在热退火处理室中提供其上设置有接触金属层的基板，在该热退火处理室中向该接触金属层提供热能处理室，供给包括氮气和氢气的气体混合物，同时向热处理室中的接触层提供热能，其中氮气和氢气以约1:10和约 1：1，并在衬底上形成金属硅化物层。

26. 发明授权

US07989339B2 Vapor deposition processes for tantalum carbide nitride materials 失效
标题翻译：碳化钽氮化物材料的气相沉积工艺
公开(公告)号：US07989339B2
公开(公告)日：2011-08-02
申请号：US12699271
申请日：2010-02-03
申请人： Kavita Shah , Haichun Yang , Schubert S. Chu
发明人： Kavita Shah , Haichun Yang , Schubert S. Chu
IPC分类号： H01L21/4763
CPC分类号： C23C16/36 , C04B35/58007 , C04B35/6325 , H01L21/28202 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L29/518 , H01L29/78
摘要： Embodiments of the invention generally provide methods for depositing and compositions of tantalum carbide nitride materials. The methods include deposition processes that form predetermined compositions of the tantalum carbide nitride material by controlling the deposition temperature and the flow rate of a nitrogen-containing gas during a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating the substrate to a temperature within a process chamber, and exposing the substrate to a nitrogen-containing gas and a process gas containing a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate. The method further provides that the tantalum carbide nitride material is crystalline and contains interstitial carbon and elemental carbon having an interstitial/elemental carbon atomic ratio of greater than 1, such as about 2, 3, 4, or greater.
摘要翻译：本发明的实施方案通常提供了用于沉积碳化钽和氮化钽材料的组合物的方法。这些方法包括通过控制包括热分解，CVD，脉冲CVD或ALD在内的气相沉积工艺中的含氮气体的沉积温度和流速来形成碳化钽氮化物材料的预定组成的沉积工艺。在一个实施例中，提供了一种在衬底上形成含钽材料的方法，其包括将衬底加热到处理室内的温度，并将衬底暴露于含氮气体和含有钽前体气体的工艺气体同时在衬底上沉积碳化钽氮化物材料。该方法进一步提供了碳化钽氮化物材料是结晶的并且含有间隙碳和元素间碳/元素碳原子比大于1，例如约2,3,4或更大的元素碳。

27. 发明授权

US08586479B2 Methods for forming a contact metal layer in semiconductor devices 失效
标题翻译：在半导体器件中形成接触金属层的方法
公开(公告)号：US08586479B2
公开(公告)日：2013-11-19
申请号：US13356002
申请日：2012-01-23
申请人： Xinyu Fu , Srinivas Gandikota , Sang Ho Yu , Kavita Shah , Yu Lei
发明人： Xinyu Fu , Srinivas Gandikota , Sang Ho Yu , Kavita Shah , Yu Lei
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/0236 , C23C16/045 , C23C16/45523 , H01L21/02057 , H01L21/28518 , H01L21/28562 , H01L21/306 , H01L21/76814 , H01L21/76826
摘要： Methods for forming a contact metal layer in a contact structure in semiconductor devices are provided in the present invention. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device includes pulsing a deposition precursor gas mixture to a surface of a substrate disposed in a metal deposition processing chamber, pulsing a purge gas mixture to an edge of the substrate, wherein the purge gas mixture includes at least a hydrogen containing gas and an inert gas, and forming a contact metal layer on the substrate from the first deposition precursor gas mixture.
摘要翻译：在本发明中提供了在半导体器件的接触结构中形成接触金属层的方法。在一个实施例中，用于在半导体器件中沉积用于形成接触结构的接触金属层的方法包括：将沉积前体气体混合物脉动到设置在金属沉积处理室中的衬底的表面，将清洗气体混合物脉冲到边缘其中所述吹扫气体混合物至少包含含氢气体和惰性气体，并且从所述第一沉积前体气体混合物在所述衬底上形成接触金属层。

28. 发明申请

US20130253037A1 AURORA A KINASE EFFECTORS 审中-公开
公开(公告)号：US20130253037A1
公开(公告)日：2013-09-26
申请号：US13885170
申请日：2011-11-16
申请人： Kavita Shah
发明人： Kavita Shah
IPC分类号： C12Q1/48
CPC分类号： C12Q1/485 , G01N33/57415 , G01N33/57434 , G01N2800/52
摘要： Two proteins (PHLDA1 and LIMK2) have been identified as direct targets of Aurora A kinase activity. PHLDA1 downregulation and Aurora A upregulation are strong predictors of poor prognosis for breast cancer patients. In accordance with one embodiment a method of detecting, prognosing and monitoring the presence/progression of cancer, and more specifically breast or prostate cancer, is provided. In one embodiment the method comprises the step of analyzing a biological sample from a patient to detect and/or quantitate the presence of Aurora A, PHLDA1 or LIMK2 amino acid sequences. In one embodiment a method of treating cancer is provided comprising the administration of therapies that enhance the activity of PHLDA1 and/or decrease the activity of LIMK2.
摘要翻译：已经鉴定出两种蛋白质（PHLDA1和LIMK2）是Aurora A激酶活性的直接靶标。 PHLDA1下调和Aurora A上调是对乳腺癌患者预后不良的强烈预测因素。根据一个实施方案，提供了检测，预测和监测癌症的存在/进展，更具体地说是乳腺癌或前列腺癌的方法。在一个实施方案中，该方法包括分析来自患者的生物样品以检测和/或定量Aurora A，PHLDA1或LIMK2氨基酸序列的存在的步骤。在一个实施方案中，提供了治疗癌症的方法，其包括施用增强PHLDA1活性和/或降低LIMK2活性的治疗。

29. 发明申请

US20130189840A1 METHODS FOR FORMING A CONTACT METAL LAYER IN SEMICONDUCTOR DEVICES 失效
标题翻译：在半导体器件中形成接触金属层的方法
公开(公告)号：US20130189840A1
公开(公告)日：2013-07-25
申请号：US13356002
申请日：2012-01-23
申请人： Xinyu Fu , Srinivas Gandikota , Sang Ho Yu , Kavita Shah , Yu Lei
发明人： Xinyu Fu , Srinivas Gandikota , Sang Ho Yu , Kavita Shah , Yu Lei
IPC分类号： H01L21/285
CPC分类号： H01L21/76843 , C23C16/0236 , C23C16/045 , C23C16/45523 , H01L21/02057 , H01L21/28518 , H01L21/28562 , H01L21/306 , H01L21/76814 , H01L21/76826
摘要： Methods for forming a contact metal layer in a contact structure in semiconductor devices are provided in the present invention. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device includes pulsing a deposition precursor gas mixture to a surface of a substrate disposed in a metal deposition processing chamber, pulsing a purge gas mixture to an edge of the substrate, wherein the purge gas mixture includes at least a hydrogen containing gas and an inert gas, and forming a contact metal layer on the substrate from the first deposition precursor gas mixture.
摘要翻译：在本发明中提供了在半导体器件的接触结构中形成接触金属层的方法。在一个实施例中，用于在半导体器件中沉积用于形成接触结构的接触金属层的方法包括：将沉积前体气体混合物脉动到设置在金属沉积处理室中的衬底的表面，将清洗气体混合物脉冲到边缘其中所述吹扫气体混合物至少包含含氢气体和惰性气体，并且从所述第一沉积前体气体混合物在所述衬底上形成接触金属层。

30. 发明授权

US07252944B2 Methods and compositions for modulating cell proliferation 失效
标题翻译：用于调节细胞增殖的方法和组合物
公开(公告)号：US07252944B2
公开(公告)日：2007-08-07
申请号：US10903334
申请日：2004-07-30
申请人： Kavita Shah , Sungjoon Kim
发明人： Kavita Shah , Sungjoon Kim
IPC分类号： C12Q1/68
CPC分类号： C12Q1/48 , C12Q1/485 , G01N2333/91028 , G01N2500/04
摘要： This invention provides methods for identifying novel SHMT modulators. The methods comprise first screening test agents for modulators of p38 activity and then further screening the identified modulating agents for modulators of SHMT enzyme activity. The invention further provides methods and pharmaceutical compositions for modulating cellular proliferation and for treating tumors using the novel SHMT modulators.
摘要翻译：本发明提供鉴定新型SHMT调节剂的方法。所述方法包括首先筛选p38活性调节剂的测试剂，然后进一步筛选鉴定的调节剂用于SHMT酶活性的调节剂。本发明还提供了使用新型SHMT调节剂调节细胞增殖和治疗肿瘤的方法和药物组合物。

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