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21. 发明授权

US09082944B2 Optoelectronic semiconductor component and scattering body 有权
标题翻译：光电半导体元件和散射体
公开(公告)号：US09082944B2
公开(公告)日：2015-07-14
申请号：US13817273
申请日：2011-08-04
申请人： Ralph Wirth
发明人： Ralph Wirth
IPC分类号： H01L33/58 , H01L33/44 , G02B5/02 , H01L33/56
CPC分类号： H01L33/58 , G02B5/0278 , H01L33/44 , H01L33/56 , H01L2933/0091
摘要： An optoelectronic semiconductor component includes one or a plurality of optoelectonic semiconductor chips, and at least one scattering body including a radiation-transmissive matrix material and embedded therein scattering particles composed of a particle material and which is disposed downstream of at least one of the semiconductor chips, wherein, in the event of a temperature change, a difference in refractive index between the matrix material and the particle material changes, and the difference in refractive index between the matrix material and the particle material at a temperature of 300 K is at most 0.15.
摘要翻译：光电子半导体部件包括一个或多个光电半导体芯片，以及至少一个散射体，其包括辐射透射基体材料，并且在其中嵌入由粒子材料构成的散射粒子，并且设置在至少一个半导体芯片的下游其中，在温度变化的情况下，基体材料与粒子材料的折射率差发生变化，在300K的温度下，基体材料与粒子材料的折射率差在0.15以下。

22. 发明授权

US08847247B2 Optoelectronic module comprising at least one first semiconductor body having a radiation outlet side and an insulation layer and method for the production thereof 有权
标题翻译：包括至少一个具有辐射出口侧的第一半导体本体和绝缘层的光电模块及其制造方法
公开(公告)号：US08847247B2
公开(公告)日：2014-09-30
申请号：US13394097
申请日：2010-08-06
申请人： Karl Weidner , Ralph Wirth , Axel Kaltenbacher , Walter Wegleiter , Bernd Barchmann , Oliver Wutz , Jan Marfeld
发明人： Karl Weidner , Ralph Wirth , Axel Kaltenbacher , Walter Wegleiter , Bernd Barchmann , Oliver Wutz , Jan Marfeld
IPC分类号： H01L29/18 , H01L33/44 , H01L23/00 , H01L33/62 , H01L25/075 , H01L33/50
CPC分类号： H01L33/44 , H01L24/24 , H01L25/0753 , H01L33/50 , H01L33/62 , H01L2224/73267 , H01L2224/76155 , H01L2224/82102 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： An optoelectronic module is provided which comprises a first semiconductor body (2) with a radiation exit side (2a) on which an electrical connection region (21, 22) is arranged. The first semiconductor body (2) is arranged with its side opposite the radiation exit side (2a) on a carrier (1). An insulation material (3) is arranged on the carrier (1) laterally next to the first semiconductor body (2), which material forms a fillet and adjoins the semiconductor body (2) form-fittingly. An insulation layer (4) is arranged at least in places on the first semiconductor body (2) and the insulation material (3), on which layer a planar conductive structure is arranged for planar contacting of the first semiconductor body (2), which conductive structure is electrically conductively connected with the electrical connection region (21, 22). A method of producing such an optoelectronic module is furthermore provided.
摘要翻译：提供了一种光电模块，其包括具有辐射出射侧（2a）的第一半导体本体（2），电连接区域（21,22）布置在其上。第一半导体本体（2）的一侧与辐射出口侧（2a）相对设置在载体（1）上。绝缘材料（3）在第一半导体本体（2）的横向方向上布置在载体（1）上，该材料形成一个圆角并且与半导体本体（2）形成适当的连接。绝缘层（4）至少布置在第一半导体本体（2）和绝缘材料（3）上的位置上，其上布置有用于第一半导体主体（2）的平面接触的平面导电结构的层，导电结构与电连接区域（21,22）导电连接。此外还提供了制造这种光电子模块的方法。

23. 发明授权

US08835937B2 Optoelectronic component, device comprising a plurality of optoelectronic components, and method for the production of an optoelectronic component 有权
标题翻译：光电子部件，包括多个光电子部件的器件以及用于制造光电子部件的方法
公开(公告)号：US08835937B2
公开(公告)日：2014-09-16
申请号：US10588167
申请日：2005-02-18
申请人： Ralph Wirth , Herbert Brunner , Stefan Illek , Dieter Eissler
发明人： Ralph Wirth , Herbert Brunner , Stefan Illek , Dieter Eissler
IPC分类号： H01L33/00 , H01L31/0224 , H01L33/38
CPC分类号： H01L31/022408 , H01L31/022416 , H01L33/0079 , H01L33/0095 , H01L33/382 , H01L2224/16225
摘要： Disclosed is an optoelectronic component (1) comprising a semiconductor function region (2) with an active zone (400) and a lateral main direction of extension, said semiconductor function region including at least one opening (9, 27, 29) through the active zone, and there being disposed in the region of the opening a connecting conductor material (8) that is electrically isolated (10) from the active zone in at least in a subregion of the opening. Further disclosed are a method for producing such an optoelectronic component and a device comprising a plurality of optoelectronic components. The component and the device can be produced entirely on-wafer.
摘要翻译：公开了一种光电子部件（1），其包括具有有源区（400）和横向主延伸方向的半导体功能区（2），所述半导体功能区包括至少一个开口（9,27,29）并且在所述开口的区域中设置有至少在所述开口的一个子区域中与所述活性区电隔离（10）的连接导体材料（8）。进一步公开的是制造这种光电子部件的方法和包括多个光电子部件的器件。组件和设备可以完全在晶片上生产。

24. 发明授权

US08723192B2 Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component 有权
标题翻译：光电半导体元件和光电半导体元件的制造方法
公开(公告)号：US08723192B2
公开(公告)日：2014-05-13
申请号：US13320304
申请日：2010-07-19
申请人： Karl Weidner , Ralph Wirth , Axel Kaltenbacher , Walter Wegleiter , Bernd Barchmann , Oliver Wutz , Jan Marfeld
发明人： Karl Weidner , Ralph Wirth , Axel Kaltenbacher , Walter Wegleiter , Bernd Barchmann , Oliver Wutz , Jan Marfeld
IPC分类号： H01L29/18
CPC分类号： H01L33/0079 , H01L23/3107 , H01L23/3185 , H01L25/042 , H01L25/0753 , H01L31/02005 , H01L31/0203 , H01L31/0232 , H01L31/02322 , H01L31/02327 , H01L31/1892 , H01L33/483 , H01L33/486 , H01L33/502 , H01L33/54 , H01L33/56 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2933/005 , H01L2933/0066 , H01L2924/00
摘要： A method for producing an optoelectronic semiconductor component includes providing a carrier; arranging at least one optoelectronic semiconductor chip at a top side of the carrier; shaping a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body covers all side areas of the at least one optoelectronic semiconductor chip, and wherein a surface facing away from the carrier at the top side and/or a surface facing the carrier at the underside of the at least one semiconductor chip remains substantially free of the shaped body or is exposed, and removing the carrier.
摘要翻译：一种光电子半导体部件的制造方法，包括提供载体; 在载体的顶侧布置至少一个光电子半导体芯片; 在所述至少一个光电半导体芯片周围成形成形体，其中所述成形体覆盖所述至少一个光电半导体芯片的所有侧面区域，并且其中，在顶侧处背离所述载体的表面和/或面向所述至少一个光电半导体芯片的表面在至少一个半导体芯片的下侧的载体保持基本上没有成形体或暴露，并且移除载体。

25. 发明授权

US08624269B2 Radiation-emitting thin-film semiconductor chip and method of producing a radiation-emitting thin film semiconductor chip 有权
标题翻译：辐射发射薄膜半导体芯片和辐射发射薄膜半导体芯片的制造方法
公开(公告)号：US08624269B2
公开(公告)日：2014-01-07
申请号：US12989470
申请日：2009-04-09
申请人： Ralph Wirth
发明人： Ralph Wirth
IPC分类号： H01L27/15
CPC分类号： H01L33/08 , H01L27/153 , H01L2924/0002 , H01L2924/00
摘要： A radiation-emitting thin film semiconductor chip is herein described which comprises a first region with a first active zone, a second region, separated laterally from the first region by a space, with a second active zone which extends parallel to the first active zone in a different plane, and a compensating layer, which is located in the second region at the level of the first active zone, the compensating layer not containing any semiconductor material.
摘要翻译：本文描述了一种辐射发射薄膜半导体芯片，其包括具有第一有源区的第一区域和与第一区域横向隔开一空间的第二区域，第二活性区域平行于第一活性区域延伸，不同的平面和补偿层，其位于第一有源区的电平的第二区域中，补偿层不包含任何半导体材料。

26. 发明申请

US20120193657A1 Radiation-Emitting Semiconductor Component 有权
标题翻译：辐射发射半导体元件
公开(公告)号：US20120193657A1
公开(公告)日：2012-08-02
申请号：US13389661
申请日：2010-08-05
申请人： Norwin von Malm , Ralph Wirth
发明人： Norwin von Malm , Ralph Wirth
IPC分类号： H01L33/50
CPC分类号： H01L27/153 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/50 , H01L33/62 , H01L2224/49107 , H01L2924/3011 , H01L2924/00
摘要： A radiation-emitting semiconductor component includes a light-emitting diode chip with at least two emission regions that can be operated independently of each other and at least two differently designed conversion elements. During operation of the light-emitting diode chips each of the emission regions is provided for generating electromagnetic primary radiation. Each emission region has an emission surface by which at least part of the primary radiation is decoupled from the light-emitting diode chip. The conversion elements are provided for absorbing at least part of the primary radiation and for re-emitting secondary radiation. The differently designed conversion elements are disposed downstream of different emission surfaces. An electric resistance element is connected in series or parallel to at least one of the emission regions.
摘要翻译：辐射发射半导体部件包括具有至少两个发射区域的发光二极管芯片，所述至少两个发射区域可以彼此独立地操作和至少两个不同设计的转换元件。在发光二极管芯片的操作期间，每个发射区域被设置用于产生电磁一次辐射。每个发射区域具有发射表面，通过该发射表面，至少一部分初级辐射与发光二极管芯片分离。提供转换元件用于吸收至少一部分初级辐射并用于重新发射次级辐射。不同设计的转换元件设置在不同发射表面的下游。电阻元件串联或并联连接至至少一个发射区域。

27. 发明授权

US08203160B2 LED semiconductor body and use of an LED semiconductor body 有权
公开(公告)号：US08203160B2
公开(公告)日：2012-06-19
申请号：US12443155
申请日：2007-09-19
申请人： Reiner Windisch , Ralph Wirth , Stefan Groetsch , Georg Bogner , Guenter Kirchberger , Klaus Streubel
发明人： Reiner Windisch , Ralph Wirth , Stefan Groetsch , Georg Bogner , Guenter Kirchberger , Klaus Streubel
IPC分类号： H01L33/00
摘要： An LED semiconductor body includes a number of at least two radiation-generating active layers. Each active layer has a forward voltage, wherein the number of active layers is adapted to an operating voltage in such a way that the voltage dropped across a series resistor connected in series with the active layers is at most of the same magnitude as a voltage dropped across the LED semiconductor body. The invention furthermore describes various uses of the LED semiconductor body.

28. 发明申请

US20110291129A1 OPTOELECTRONIC DEVICE 有权
标题翻译：光电器件
公开(公告)号：US20110291129A1
公开(公告)日：2011-12-01
申请号：US13128472
申请日：2009-11-13
申请人： Ralph Wirth
发明人： Ralph Wirth
IPC分类号： H01L33/08
CPC分类号： H05B33/0857 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic device that emits mixed light includes light in a first and a second wavelength range, including a first semiconductor light source having a first light-emitting diode, which during operation emits light in the first wavelength range with a first intensity; a second semiconductor light source having a second light-emitting diode, which during operation emits light in the second wavelength range with a second intensity, wherein the first and second wavelength ranges are different from one another; and a resistance element having a temperature-dependent electrical resistance, wherein the first wavelength and/or the first intensity of the light emitted by the first semiconductor light source have/has a first temperature dependence, and the second wavelength range and/or the second intensity of the light emitted by the second semiconductor light source have/has a second temperature dependence, which is different from the first temperature dependence, the resistance element and the first semiconductor light source form a series circuit, and the series circuit and the second semiconductor light source form a parallel circuit.
摘要翻译：发射混合光的光电子器件包括第一和第二波长范围的光，包括具有第一发光二极管的第一半导体光源，其在操作期间以第一强度发射第一波长范围的光; 具有第二发光二极管的第二半导体光源，其在操作期间以第二强度在第二波长范围内发光，其中所述第一和第二波长范围彼此不同; 和具有温度依赖性电阻的电阻元件，其中由第一半导体光源发射的光的第一波长和/或第一强度具有第一温度依赖性，并且第二波长范围和/或第二波长范围由第二半导体光源发出的光的强度具有与第一温度依赖性不同的第二温度依赖性，电阻元件和第一半导体光源形成串联电路，并且串联电路和第二半导体光源形成并联电路。

29. 发明授权

US08067783B2 Radiation-emitting chip comprising at least one semiconductor body 有权
标题翻译：辐射发射芯片包括至少一个半导体本体
公开(公告)号：US08067783B2
公开(公告)日：2011-11-29
申请号：US12527148
申请日：2008-01-31
申请人： Ralph Wirth
发明人： Ralph Wirth
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L25/0753 , H01L27/156 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A chip includes at least one semiconductor body having a radiation-emitting region, and at least one first contact region which is provided for making electrical contact with the semiconductor body and is spaced apart laterally from the radiation-emitting region. An electrically conductive first contact layer which is transmissive to the emitted radiation and which connects a surface of the semiconductor body, is situated on the radiation exit side of the chip to the first contact region. The surface is free of the radiation-absorbing contact structures.
摘要翻译：一种芯片包括至少一个具有辐射发射区域的半导体本体，以及至少一个第一接触区域，其被提供用于与半导体本体电接触并且与辐射发射区域横向隔开。对于发射的辐射透射并且连接半导体本体的表面的导电的第一接触层位于芯片的辐射出口侧到第一接触区域。该表面没有吸收辐射的接触结构。

30. 发明申请

US20110240955A1 LED Semiconductor Body and Use of an LED Semiconductor Body 有权
标题翻译： LED半导体器件和LED半导体器件的使用
公开(公告)号：US20110240955A1
公开(公告)日：2011-10-06
申请号：US12443155
申请日：2007-09-19
申请人： Reiner Windisch , Ralph Wirth , Stefan Groetsch , Georg Bogner , Guenter Kirchberger , Klaus Streubel
发明人： Reiner Windisch , Ralph Wirth , Stefan Groetsch , Georg Bogner , Guenter Kirchberger , Klaus Streubel
IPC分类号： H01L27/15
CPC分类号： H01L27/15 , H01L24/24 , H01L25/0756 , H01L25/167 , H01L33/08 , H01L2224/32145 , H01L2924/0002 , H01L2924/12036 , H01L2924/12041 , H01L2924/00
摘要： An LED semiconductor body includes a number of at least two radiation-generating active layers. Each active layer has a forward voltage, wherein the number of active layers is adapted to an operating voltage in such a way that the voltage dropped across a series resistor connected in series with the active layers is at most of the same magnitude as a voltage dropped across the LED semiconductor body. The invention furthermore describes various uses of the LED semiconductor body.
摘要翻译： LED半导体体包括多个至少两个辐射生成有源层。每个有源层具有正向电压，其中有源层的数量适应于工作电压，使得跨过与有源层串联连接的串联电阻器上的电压与电压下降最多相同的大小跨越LED半导体体。本发明还描述了LED半导体本体的各种用途。

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