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21. 发明授权

US07217480B2 Organic electrolytic solution and lithium battery using the same 有权
标题翻译：有机电解液和锂电池使用相同
公开(公告)号：US07217480B2
公开(公告)日：2007-05-15
申请号：US10754731
申请日：2004-01-12
申请人： Jae-il Han , Hyo-sug Lee , Han-soo Kim
发明人： Jae-il Han , Hyo-sug Lee , Han-soo Kim
IPC分类号： H01M10/40
CPC分类号： H01M6/168 , H01M2/0212 , H01M2/0217 , H01M10/052 , H01M10/0567
摘要： An organic electrolytic solution includes a lithium salt and an organic solvent containing a phosphonate compound, and a lithium battery utilizes the organic electrolytic solution. When using the organic electrolyte containing the phosphonate compound to manufacture a lithium secondary battery, the lithium secondary battery has improved stability to reduction-induced decomposition, reduced first cycle irreversible capacity, and improved charging/discharging efficiency and lifespan. In addition, the lithium secondary battery does not swell beyond a predetermined thickness range after formation and standard charging at room temperature and has improved reliability. Even when the lithium secondary battery swells seriously at a high temperature, its capacity is high enough for practical applications. The capacity of the lithium secondary battery may substantially be recovered after being left at a high temperature.
摘要翻译：有机电解液包含锂盐和含有膦酸酯化合物的有机溶剂，锂电池利用有机电解液。当使用含有膦酸酯化合物的有机电解质来制造锂二次电池时，锂二次电池具有改善的还原诱导分解稳定性，降低第一循环不可逆容量，提高充放电效率和寿命。此外，锂二次电池在室温下成型和标准充电之后不会膨胀超过预定的厚度范围并且具有改善的可靠性。即使锂二次电池在高温下发生严重的膨胀，其实际应用也足够高。锂二次电池的容量在高温下放电后可以大体上恢复。

22. 发明申请

US20090045455A1 Nonvolatile memory device and method of fabricating the same 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20090045455A1
公开(公告)日：2009-02-19
申请号：US12219465
申请日：2008-07-23
申请人： Kwang-soo Seol , Sang-jin Park , Sang-moo Choi , Hyo-sug Lee , Jung-hun Sung
发明人： Kwang-soo Seol , Sang-jin Park , Sang-moo Choi , Hyo-sug Lee , Jung-hun Sung
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/4234 , H01L29/40117 , H01L29/513 , H01L29/66833
摘要： Example embodiments relate to nonvolatile semiconductor memory devices using an electric charge storing layer as a storage node and fabrication methods thereof. An electric charge trap type nonvolatile memory device may include a tunneling film, an electric charge storing layer, a blocking insulation film, and a gate electrode. The blocking insulation film may be an aluminum oxide having an energy band gap larger than that of a γ-phase aluminum oxide film. An α-phase crystalline aluminum oxide film as a blocking insulation film may have an energy band gap of about 7.0 eV or more along with fewer defects. The crystalline aluminum oxide film may be formed by providing a source film (e.g., AlF3 film) on or within a preliminary blocking insulation film (e.g., amorphous aluminum oxide film) and performing a heat treatment. Alternatively, an aluminum compound (e.g., AlF3) may be introduced into the preliminary blocking insulation film by other diffusion methods or ion implantation. Accordingly, the ability of the memory device to maintain electric charges may be improved, the operating voltage for programming and erasing may be lowered, and the operating speed may be increased.
摘要翻译：示例性实施例涉及使用电荷存储层作为存储节点的非易失性半导体存储器件及其制造方法。电荷阱型非易失性存储器件可以包括隧穿膜，电荷存储层，阻挡绝缘膜和栅电极。阻挡绝缘膜可以是具有比γ相氧化铝膜的能带隙大的能带隙的氧化铝。作为阻挡绝缘膜的α相结晶氧化铝膜可以具有约7.0eV以上的能带隙和更少的缺陷。结晶氧化铝膜可以通过在预先隔离绝缘膜（例如无定形氧化铝膜）上或内部提供源膜（例如，AlF 3膜）并进行热处理而形成。或者，可以通过其它扩散方法或离子注入将铝化合物（例如，AlF 3）引入到初步阻挡绝缘膜中。因此，可以提高存储器件保持电荷的能力，可以降低用于编程和擦除的操作电压，并且可以提高操作速度。

23. 发明申请

US20080185633A1 Charge trap memory device with blocking insulating layer having higher-dielectric constant and larger energy band-gap and method of manufacturing the same 审中-公开
标题翻译：具有较高介电常数和较大能带隙的阻挡绝缘层的电荷陷阱存储器及其制造方法
公开(公告)号：US20080185633A1
公开(公告)日：2008-08-07
申请号：US12068060
申请日：2008-02-01
申请人： Sang-moo Choi , Hyo-sug Lee , Kwang-soo Seol , Sang-jin Park , Eun-ha Lee
发明人： Sang-moo Choi , Hyo-sug Lee , Kwang-soo Seol , Sang-jin Park , Eun-ha Lee
IPC分类号： H01L29/788 , H01L29/792 , H01L21/336
CPC分类号： H01L29/7881 , H01L29/513 , H01L29/792
摘要： A charge trap memory device according to example embodiments may include a tunnel insulating layer provided on a substrate. A charge trap layer may be provided on the tunnel insulating layer. A blocking insulating layer may be provided on the charge trap layer, wherein the blocking insulating layer may include a lanthanide (e.g., lanthanum). The blocking insulating layer may further include aluminum and oxygen, wherein the ratio of lanthanide to aluminum may be greater than 1 (e.g., about 1.5 to about 2). The charge trap memory device may further include a buffer layer provided between the charge trap layer and the blocking insulating layer, and a gate electrode provided on the blocking insulating layer.
摘要翻译：根据示例性实施例的电荷陷阱存储器件可以包括设置在衬底上的隧道绝缘层。电荷陷阱层可以设置在隧道绝缘层上。阻挡绝缘层可以设置在电荷陷阱层上，其中阻挡绝缘层可以包括镧系元素（例如镧）。阻挡绝缘层可以进一步包括铝和氧，其中镧系元素与铝的比可以大于1（例如约1.5至约2）。电荷陷阱存储器件还可以包括设置在电荷陷阱层和阻挡绝缘层之间的缓冲层，以及设置在阻挡绝缘层上的栅电极。

24. 发明授权

US08294134B2 Phase change memory devices having a current increase unit 有权
标题翻译：具有电流增加单元的相变存储器件
公开(公告)号：US08294134B2
公开(公告)日：2012-10-23
申请号：US12926444
申请日：2010-11-18
申请人： Hyuk-soon Choi , Ji-hyun Hur , Yoon-ho Kang , Hyo-sug Lee , Jai-kwang Shin , Jae-joon Oh
发明人： Hyuk-soon Choi , Ji-hyun Hur , Yoon-ho Kang , Hyo-sug Lee , Jai-kwang Shin , Jae-joon Oh
IPC分类号： H01L47/00
CPC分类号： H01L45/1246 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1675 , Y10T29/49002
摘要： A phase change memory device includes a switching device and a storage node connected to the switching device. The storage node includes a bottom stack, a phase change layer disposed on the bottom stack and a top stack disposed on the phase change layer. The phase change layer includes a unit for increasing a path of current flowing through the phase change layer and reducing a volume of a phase change memory region. The area of a surface of the unit disposed opposite to the bottom stack is greater than or equal to the area of a surface of the bottom stack in contact with the phase change layer.
摘要翻译：相变存储器件包括开关器件和连接到开关器件的存储节点。存储节点包括底部堆叠，设置在底部堆叠上的相变层和设置在相变层上的顶部堆叠。相变层包括用于增加流过相变层的电流的路径并减小相变存储区的体积的单元。与底部叠层相对设置的单元的表面的面积大于或等于与相变层接触的底部叠层的表面的面积。

25. 发明申请

US20090011340A1 Organic electrolytic solution and lithium battery employing the same 有权
标题翻译：有机电解液和采用其的锂电池
公开(公告)号：US20090011340A1
公开(公告)日：2009-01-08
申请号：US12222417
申请日：2008-08-08
申请人： Doo-yeon Lee , Hyo-sug Lee
发明人： Doo-yeon Lee , Hyo-sug Lee
IPC分类号： H01M6/16
CPC分类号： H01M10/0569 , H01M4/131 , H01M4/133 , H01M4/1391 , H01M4/1393 , H01M6/16 , H01M6/166 , H01M10/0525 , H01M10/0567 , H01M10/0568 , H01M2300/004
摘要： An organic electrolytic solution comprising a nonaqueous solvent and a lithium salt, wherein the organic electrolytic solution comprises a compound of Formula 1 and at least one selected from compounds of Formulas 2 through 5: wherein R1, a C1˜C10 alkoxy group, wherein R2 and R3 are independently unsubstituted C1˜C5 alkyl group or C1˜C5 alkyl group substituted with halogen atom, wherein n is an integer between 1 and 6.
摘要翻译：一种包含非水溶剂和锂盐的有机电解液，其中所述有机电解液包含式1的化合物和选自式2至5的化合物中的至少一种：其中R1，C1〜C10烷氧基，其中R2和 R3独立地为未取代的C1〜C5烷基或被卤素原子取代的C1〜C5烷基，其中n为1〜6的整数。

26. 发明申请

US20080173860A1 Phase change memory device and method of fabricating the same 审中-公开
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20080173860A1
公开(公告)日：2008-07-24
申请号：US12007014
申请日：2008-01-04
申请人： Woong-chul Shin , Ki-joon Kim , Ji-hyun Hur , Hyo-sug Lee
发明人： Woong-chul Shin , Ki-joon Kim , Ji-hyun Hur , Hyo-sug Lee
IPC分类号： H01L45/00
CPC分类号： H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/144 , H01L45/1616 , H01L45/1683
摘要： Provided are a phase change memory device and a method of fabricating the same. The phase change memory device including a phase change layer in a storage node thereof includes: a bottom electrode; a bottom electrode contact layer formed of a phase change material disposed on the bottom electrode; a first phase change layer having a smaller width than the bottom electrode contact layer, disposed on the bottom electrode contact layer; a second phase change layer having a larger width than the first phase change layer, disposed on the first phase change layer; and a upper electrode disposed on the second phase change layer.
摘要翻译：提供一种相变存储器件及其制造方法。包括其存储节点中的相变层的相变存储器件包括：底部电极; 由设置在所述底部电极上的相变材料形成的底部电极接触层; 设置在底部电极接触层上的具有比底部电极接触层更小的宽度的第一相变层; 设置在所述第一相变层上的具有比所述第一相变层宽的宽度的第二相变层; 以及设置在第二相变层上的上电极。

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