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21. 发明授权

US08912384B2 Absorbent article and manufacturing apparatus for absorbent article 有权
标题翻译：用于吸收制品的吸收制品和制造装置
公开(公告)号：US08912384B2
公开(公告)日：2014-12-16
申请号：US13497870
申请日：2010-09-30
申请人： Nahomi Suzuki , Tatsuya Tamura , Nobuyuki Kato
发明人： Nahomi Suzuki , Tatsuya Tamura , Nobuyuki Kato
IPC分类号： A61F13/15 , A61F13/475 , A61F13/536 , A61F13/533 , A61F13/47 , A61F13/45 , A61F13/53
CPC分类号： A61F13/4756 , A61F13/15707 , A61F13/4704 , A61F13/533 , A61F13/536 , A61F2013/4587 , A61F2013/530934 , A61F2013/530941
摘要： A compressed portion is formed in the absorbent article by compressing the absorber through a compression process. The compressed portion has a top-surface groove formed on the skin-contact-surface side, and a back-surface groove formed on the clothing-contact-surface side. A bottom portion of the top-surface groove is flat. Since the recessed portions are formed in the bottom portion of the back-surface groove through the compression process, a compression part where the density of the absorber is increased more than in an uncompressed portion and high compression parts where the density of the absorber is increased more than in the compression part are formed in the bottom portion. Thus, the absorbent article can be permeate into by a thick liquid, and is more likely to absorb liquid.
摘要翻译：通过压缩过程压缩吸收体，在吸收性物品中形成压缩部分。压缩部分具有形成在皮肤接触表面侧的顶表面凹槽和形成在衣服 - 接触表面侧上的背面凹槽。顶面凹槽的底部是平的。由于凹部通过压缩加工形成在背面槽的底部，因此吸收体的密度比未压缩部分增加的压缩部分和吸收体的密度增加的高压缩部比在压缩部分多的是形成在底部。因此，吸收性物品可以通过浓稠的液体渗透，更可能吸收液体。

22. 发明申请

US20110318505A1 METHOD FOR FORMING TANTALUM NITRIDE FILM AND FILM-FORMING APPARATUS FOR FORMING THE SAME 审中-公开
标题翻译：形成氮化钛膜和成膜装置的方法
公开(公告)号：US20110318505A1
公开(公告)日：2011-12-29
申请号：US13130997
申请日：2009-12-07
申请人： Akiko Yamamoto , Harunori Ushikawa , Nobuyuki Kato , Takakazu Yamada
发明人： Akiko Yamamoto , Harunori Ushikawa , Nobuyuki Kato , Takakazu Yamada
IPC分类号： C23C16/34 , C23C16/455 , C23C16/448 , C23C16/50
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4481
摘要： A method for forming a tantalum nitride film, which comprises supplying a gaseous nitrogen atom-containing compound, as a reactant gas and supplying gaseous t-amylimido-tris-(dimethylamide)tantalum, as a gaseous raw material, to the surface of the substrate S to thus form a tantalum nitride film on the surface of the substrate S; and a film-forming apparatus, which comprises a reactant gas supply line L4; a container 13 for liquefy a raw material; an evaporator 11 for gasify the liquefied raw material; a liquid mass flow controller 12 for controlling the amount of the liquid raw material to be supplied; and a gaseous raw material supply line L1. These method and apparatus would permit the stable supply of the gaseous raw material at all times and the improvement of the throughput of the substrate to be processed and as a result, the method and the apparatus permit the improvement of the productivity of the tantalum nitride film.
摘要翻译：一种形成氮化钽膜的方法，其包括供给含氮气的化合物作为反应气体，并将作为气态原料的气态叔戊基酰胺 - 三（二甲基酰胺）钽供给至基材表面从而在衬底S的表面上形成氮化钽膜; 以及成膜装置，其包括反应气体供给管线L4; 用于液化原料的容器13; 用于气化液化原料的蒸发器11; 液体质量流量控制器12，用于控制待供应的液体原料的量; 和气态原料供给管线L1。这些方法和装置将一直允许气态原料的稳定供应以及待处理的基材的通过量的提高，结果，该方法和装置允许提高氮化钽膜的生产率。

23. 发明申请

US20110200554A1 THERAPEUTIC AGENT FOR HEPATITIS C 审中-公开
标题翻译：乙型肝炎治疗药物C
公开(公告)号：US20110200554A1
公开(公告)日：2011-08-18
申请号：US13124584
申请日：2009-10-16
申请人： Akito Nozaki , Katsuaki Tanaka , Masanori Ikeda , Nobuyuki Kato
发明人： Akito Nozaki , Katsuaki Tanaka , Masanori Ikeda , Nobuyuki Kato
IPC分类号： A61K38/21 , C07C275/64 , A61K31/17 , A61P31/14
CPC分类号： A61K31/17 , A61K38/212 , A61K2300/00
摘要： A novel therapeutic agent for hepatitis C having a high therapeutic effect against hepatitis C is disclosed. The therapeutic agent for hepatitis C contains as an effective ingredient hydroxyurea. The therapeutic agent for hepatitis C optionally further contains interferon α. By the present invention, a novel therapeutic agent for hepatitis C having a high therapeutic effect against hepatitis C was provided. A synergistic therapeutic effect against hepatitis C is obtained by using interferon α in combination. Therefore, in cases where a patient is infected with the genotype of hepatitis C virus for which therapy by interferon α is effective, the therapeutic effect is further promoted by using interferon α in combination.
摘要翻译：公开了一种对丙型肝炎具有高治疗效果的新型丙型肝炎治疗剂。丙型肝炎治疗剂含有羟基脲的有效成分。丙型肝炎治疗剂任选地还含有干扰素α。通过本发明，提供了一种对丙型肝炎具有高治疗效果的新型丙型肝炎治疗剂。通过组合使用干扰素α获得对丙型肝炎的协同治疗效果。因此，在患者感染了通过干扰素α治疗的丙型肝炎病毒基因型有效的情况下，通过组合使用干扰素α进一步促进了治疗效果。

24. 发明授权

US07790590B2 Selective W-CVD method and method for forming multi-layered Cu electrical interconnection 有权
标题翻译：选择性W-CVD方法和形成多层Cu电互连的方法
公开(公告)号：US07790590B2
公开(公告)日：2010-09-07
申请号：US11886428
申请日：2006-03-13
申请人： Narishi Gonohe , Masamichi Harada , Nobuyuki Kato
发明人： Narishi Gonohe , Masamichi Harada , Nobuyuki Kato
IPC分类号： H01L21/20 , H01L21/44
CPC分类号： H01L21/76849 , C23C16/0218 , C23C16/14 , H01L21/28562 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A substrate provided thereon with an electrical insulating film which carries holes or the like filled with a Cu-containing electrical interconnection film is subjected to a pre-treatment in which the surface of the electrical insulating film and that of the Cu-containing electrical interconnection film are treated at a temperature of not more than 300° C. using, in a predetermined state, a gas of a compound containing an atom selected from the group consisting of N, H and Si atoms within the chemical formula thereof, before selectively forming a W-capping film on the electrical interconnection film. After the completion of the pre-treatment, a W-capping film is selectively formed on the electrical interconnection film and then an upper Cu electrical interconnection is further formed.
摘要翻译：在其上设置有带有填充有含Cu电互连膜的孔等的电绝缘膜的基板经受预处理，其中电绝缘膜的表面和含Cu电互连膜的表面在不超过300℃的温度下，在预定状态下，在选择性地形成其中之前，含有选自由N，H和Si原子组成的组的化合物的化合物的气体电气互连膜上的W覆盖膜。在预处理完成之后，在电互连膜上选择性地形成W覆盖膜，然后进一步形成上部Cu电互连。

25. 发明申请

US20100139556A1 PURGE GAS ASSEMBLY 有权
标题翻译：燃气总成
公开(公告)号：US20100139556A1
公开(公告)日：2010-06-10
申请号：US12597589
申请日：2008-04-23
申请人： Tsuyoshi Kagami , Osamu Irino , Nobuyuki Kato , Harunori Ushikawa
发明人： Tsuyoshi Kagami , Osamu Irino , Nobuyuki Kato , Harunori Ushikawa
IPC分类号： B05C11/00
CPC分类号： C23C16/4585 , C23C16/45519 , H01L21/68735
摘要： In a purge gas assembly provided: in an outer circumference portion of a substrate stage, with a shoulder portion offset downward below a substrate mounting surface on an upper end of the substrate stage; a purge ring enclosing a stepped circumferential surface between the substrate mounting surface and the shoulder portion; and an annular gas ejection passage for ejecting the purge gas, the gas ejecting passage being defined between the stepped circumferential surface and an inner circumferential surface of the purge ring, an arrangement is made such that the purge gas can be ejected uniformly from the gas ejection passage over the entire circumference thereof and that the deposition of a film on an upper surface of the purge ring can also be restricted, and further that the construction is simplified. The purge ring has formed therein an annular groove which recesses from a lower surface thereof upward.
摘要翻译：在吹扫气体组件中，其设置在衬底台的外周部分中，其肩部部分向下偏置在衬底台的上端上的衬底安装表面下方; 净化环，其包围所述基板安装表面和所述肩部之间的阶梯状周向表面; 以及用于喷射净化气体的环形气体喷射通道，气体喷射通道限定在台阶周向表面和净化环的内圆周表面之间，使排气能够均匀地从气体喷射通过其整个圆周，并且还可以限制在清洗环的上表面上的膜的沉积，并且进一步简化了结构。清洗环中形成有从其下表面向上凹进的环形槽。

26. 发明申请

US20090166730A1 SiC semiconductor device having bottom layer and method for manufacturing the same 有权
标题翻译：具有底层的SiC半导体器件及其制造方法
公开(公告)号：US20090166730A1
公开(公告)日：2009-07-02
申请号：US12318183
申请日：2008-12-23
申请人： Eiichi Okuno , Naohiro Suzuki , Nobuyuki Kato
发明人： Eiichi Okuno , Naohiro Suzuki , Nobuyuki Kato
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/0623 , H01L29/1608 , H01L29/66068
摘要： A SiC semiconductor device includes: a substrate; a drift layer on the substrate; a trench on the drift layer; a base region in the drift layer sandwiching the trench; a channel between the base region and the trench; a source region in the base region sandwiching the trench via the channel; a gate electrode in the trench via a gate insulation film; a source electrode coupled with the source region; a drain electrode on the substrate opposite to the drift layer; and a bottom layer under the trench. An edge portion of the bottom layer under a corner of a bottom of the trench is deeper than a center portion of the bottom layer under a center portion of the bottom of the trench.
摘要翻译： SiC半导体器件包括：衬底; 衬底上的漂移层; 漂移层上的沟槽; 夹在沟槽中的漂移层中的基底区域; 基极区域和沟槽之间的沟道; 所述基极区域中的源极区域经由所述沟道夹持所述沟槽; 通过栅极绝缘膜在沟槽中的栅电极; 与源极区域耦合的源电极; 衬底上的与漂移层相反的漏电极; 和沟槽下方的底层。在沟槽的底部的角部下方的底层的边缘部分比沟槽底部的中心部分下方的底层的中心部分更深。

27. 发明授权

US07338900B2 Method for forming tungsten nitride film 有权
标题翻译：形成氮化钨膜的方法
公开(公告)号：US07338900B2
公开(公告)日：2008-03-04
申请号：US11140362
申请日：2005-05-31
申请人： Eiichi Mizuno , Narishi Gonohe , Masamichi Harada , Nobuyuki Kato
发明人： Eiichi Mizuno , Narishi Gonohe , Masamichi Harada , Nobuyuki Kato
IPC分类号： H01L21/44 , H01L21/31
CPC分类号： H01L21/28568 , C23C16/34 , H01L21/28556
摘要： A method for forming a tungsten nitride film including a first material gas supply step of supplying a first material gas composed of a tungsten compound gas, a reduction step of supplying a reducing gas, a second material gas supply step of supplying a second material gas composed of a tungsten compound gas, and a nitridation step of supplying a nitriding gas. Since a step of depositing tungsten on a substrate 5, and a step of forming tungsten nitride are performed separately, by varying the flow rate of each gas, the pressure when each gas is supplied, and the supply time, or the number of times each step is performed and the order in which the steps are performed, the quantity of tungsten deposited and the quantity of tungsten nitride formed can be controlled easily.
摘要翻译：一种形成氮化钨膜的方法，包括：供给由钨化合物气体构成的第一原料气体的第一原料气体供给工序，供给还原气体的还原工序;第二原料气体供给工序，的钨化合物气体，以及氮化步骤，供给氮化气体。由于在基板5上沉积钨的步骤和形成氮化钨的步骤是通过改变每种气体的流量，每个气体的供给时的压力，供给时间或每个气体的次数，执行步骤，并且可以容易地控制步骤的顺序，钨沉积的量和形成的氮化钨的量。

28. 发明授权

US07239016B2 Semiconductor device having heat radiation plate and bonding member 有权
标题翻译：具有散热板和接合构件的半导体装置
公开(公告)号：US07239016B2
公开(公告)日：2007-07-03
申请号：US10895947
申请日：2004-07-22
申请人： Naohiko Hirano , Nobuyuki Kato , Kuniaki Mamitsu , Yoshimi Nakase
发明人： Naohiko Hirano , Nobuyuki Kato , Kuniaki Mamitsu , Yoshimi Nakase
IPC分类号： H01L23/34
CPC分类号： H01L23/492 , H01L23/4334 , H01L23/562 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29299 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2224/83801 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01068 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/15724 , H01L2924/15747 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/01051 , H01L2924/3512 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199
摘要： A semiconductor device includes a heat generation element; a bonding member; first and second heat radiation plates disposed on first and second sides of the heat generation element through the bonding member; a heat radiation block disposed between the first heat radiation plate and the heat generation element through the bonding member; and a resin mold. The heat radiation block has a thickness in a range between 0.5 mm and 1.5 mm. The semiconductor device has high reliability of the bonding member.
摘要翻译：半导体器件包括发热元件; 接合部件; 第一和第二散热板，其通过接合构件设置在发热体的第一和第二侧上; 散热块，其通过所述接合构件设置在所述第一散热板和所述发热体之间; 和树脂模具。散热块的厚度在0.5mm至1.5mm的范围内。半导体器件具有高粘合部件的可靠性。

29. 发明授权

US06526250B1 Transfer fixing device, image bearing and conveying body, and image forming apparatus with plural gloss processing 失效
标题翻译：转印固定装置，图像承载和输送体以及具有多次光泽处理的成像装置
公开(公告)号：US06526250B1
公开(公告)日：2003-02-25
申请号：US09650672
申请日：2000-08-30
申请人： Satoshi Usui , Kiyotaka Ishikawa , Nobuyuki Kato , Kouichirou Shinohara
发明人： Satoshi Usui , Kiyotaka Ishikawa , Nobuyuki Kato , Kouichirou Shinohara
IPC分类号： G03G1516
CPC分类号： G03G15/161 , G03G15/2021 , G03G15/2064 , G03G15/6591 , G03G2215/00481 , G03G2215/00805 , G03G2215/0081 , G03G2215/0119 , G03G2215/1671
摘要： In this invention, even if a thick resin coated recording medium having large heat capacity is used, a high quality image with an excellent gloss feeling is obtained. A transfer fixing device is provided with a press conveying mechanism which includes at least one pair of pressing bodies for nipping and conveying an image bearing and conveying body and a recording medium, and contact-conveys the recording medium on the image bearing and conveying body in a region exceeding a nip region of the pair of pressing bodies, and a heat supply adjusting mechanism which includes a heating source for heating the recording medium contact-conveyed on the image bearing and conveying body by the press conveying mechanism from both obverse and reverse sides to melt an unfixed image and a thermoplastic resin layer, and makes adjustment to cause heat supplied to an image bearing surface side of the recording medium to be more than heat supplied to a non-image bearing surface side of the recording medium. Besides, transferring and fixing is performed by a heating and pressing mechanism after a preheating mechanism. Further, the image bearing and conveying body having plural different gloss surfaces is provided. Moreover, an image forming apparatus using these is also provided.
摘要翻译：在本发明中，即使使用具有大热容的厚树脂涂布的记录介质，也可获得具有优良光泽感的高品质图像。传送固定装置设置有压力传送机构，其包括至少一对用于夹持和传送图像承载和传送体和记录介质的按压体，并将记录介质接触传送到图像承载和传送体上超过所述一对按压体的压区的区域，以及供热调节机构，该供热调整机构包括：加热源，用于通过压力传送机构从正面和反面加热在图像承载体和输送体上接触输送的记录介质熔化未固定的图像和热塑性树脂层，并进行调节，使得供给到记录介质的图像承载面侧的热量比提供给记录介质的非图像承载面侧的热量多。此外，在预热机构之后，通过加热和加压机构进行转印和定影。此外，提供具有多个不同光泽表面的图像承载和输送体。此外，还提供了使用这些的图像形成装置。

30. 发明授权

US6014457A Image processing apparatus 失效
标题翻译：图像处理装置
公开(公告)号：US6014457A
公开(公告)日：2000-01-11
申请号：US958300
申请日：1997-10-27
申请人： Masahiko Kubo , Nobuyuki Kato , Koichiro Shinohara , Masahiro Takamatsu , Kazuhiro Iwaoka
发明人： Masahiko Kubo , Nobuyuki Kato , Koichiro Shinohara , Masahiro Takamatsu , Kazuhiro Iwaoka
IPC分类号： B41J2/525 , G03G15/01 , G06T1/00 , G06T5/00 , G06T11/00 , H04N1/46 , H04N1/60 , H04N1/62 , G06K9/00
CPC分类号： H04N1/628 , G06T11/001 , H04N1/603
摘要： An image processing apparatus for converting input color image signals to image recording signals to be sent to an image forming apparatus. The image processing apparatus comprises: a first color converting unit for converting the input color image signals to three-variable color signals independent of devices; a second color converting unit for converting the three-variable color signals to the image recording signals; and a parameter determining unit for determining parameters of the first color converting unit. The parameter determining unit determines the parameters so as to make characteristic colors in the input color image signals coincide with predetermined colors and to maintain linearities of color reproduction characteristics of an output image from the image forming apparatus.
摘要翻译：一种图像处理装置，用于将输入彩色图像信号转换成图像记录信号，以发送到图像形成装置。该图像处理装置包括：第一颜色转换单元，用于将输入彩色图像信号转换为独立于设备的三变色信号; 第二颜色转换单元，用于将三变色信号转换成图像记录信号; 以及参数确定单元，用于确定第一颜色转换单元的参数。参数确定单元确定参数，以使输入彩色图像信号中的特征颜色与预定颜色一致，并且保持来自图像形成装置的输出图像的色彩再现特性的线性。

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