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    • 25. 发明授权
    • Strained Ge-on-insulator structure and method for forming the same
    • 应变绝缘体上的结构及其形成方法
    • US08786017B2
    • 2014-07-22
    • US13263222
    • 2011-08-25
    • Jing WangJun XuLei Guo
    • Jing WangJun XuLei Guo
    • H01L27/12
    • H01L29/78684H01L29/7846
    • A strained Ge-on-insulator structure is provided, comprising: a silicon substrate, in which an oxide insulating layer is formed on a surface of the silicon substrate; a Ge layer formed on the oxide insulating layer, in which a first passivation layer is formed between the Ge layer and the oxide insulating layer; a gate stack formed on the Ge layer, a channel region formed below the gate stack, and a source and a drain formed on sides of the channel region; and a plurality of shallow trench isolation structures extending into the silicon substrate and filled with an insulating dielectric material to produce a strain in the channel region. Further, a method for forming the strained Ge-on-insulator structure is also provided.
    • 提供了一种应变绝缘体上的结构,包括:硅衬底,其中在硅衬底的表面上形成氧化物绝缘层; 形成在所述氧化物绝缘层上的Ge层,其中在所述Ge层和所述氧化物绝缘层之间形成第一钝化层; 形成在Ge层上的栅极叠层,形成在栅叠层下方的沟道区,以及形成在沟道区的侧面上的源极和漏极; 以及延伸到硅衬底中并填充有绝缘电介质材料以在沟道区域中产生应变的多个浅沟槽隔离结构。 此外,还提供了用于形成应变的绝缘体上Ge的结构的方法。
    • 28. 发明授权
    • Strained Ge-on-insulator structure and method for forming the same
    • 应变绝缘体上的结构及其形成方法
    • US08704306B2
    • 2014-04-22
    • US13263236
    • 2011-08-25
    • Jing WangJun XuLei Guo
    • Jing WangJun XuLei Guo
    • H01L27/12
    • H01L29/78684H01L21/28255H01L29/165H01L29/7843H01L29/7846H01L29/7848
    • A strained Ge-on-insulator structure is provided, comprising: a silicon substrate, in which an oxide insulating layer is formed on a surface of the silicon substrate; a Ge layer formed on the oxide insulating layer, in which a first passivation layer is formed between the Ge layer and the oxide insulating layer; a gate stack formed on the Ge layer; and a channel region formed below the gate stack, and a source and a drain formed on sides of the channel region, in which the source and the drain are a SixGe1-x:C source and a SixGe1-x:C drain respectively to produce a tensile strain in the channel region, in which x is within a range from 0 to 1 and a content of C is within a range from 0 to 7.5%. Further, a method for forming the strained Ge-on-insulator structure is also provided.
    • 提供了一种应变绝缘体上的结构,包括:硅衬底,其中在硅衬底的表面上形成氧化物绝缘层; 形成在所述氧化物绝缘层上的Ge层,其中在所述Ge层和所述氧化物绝缘层之间形成第一钝化层; 形成在Ge层上的栅叠层; 以及形成在栅极堆叠下方的沟道区,以及形成在沟道区的侧面上的源极和漏极,源极和漏极分别为SixGe1-x:C源极和SixGe1-x:C沟道,以产生 在通道区域中的拉伸应变,其中x在0至1的范围内,并且C的含量在0至7.5%的范围内。 此外,还提供了用于形成应变的绝缘体上Ge的结构的方法。
    • 29. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
    • 半导体器件及其形成方法
    • US20130207161A1
    • 2013-08-15
    • US13499661
    • 2011-06-27
    • Jing WangJun XuLei Guo
    • Jing WangJun XuLei Guo
    • H01L29/267H01L21/02
    • H01L29/267H01L21/02381H01L21/0245H01L21/0251H01L21/02538H01L21/0262H01L21/02639H01L21/02647
    • A semiconductor device and a method for forming the same are provided. The semiconductor device comprises: a substrate (1); an insulating layer (2), formed on the substrate (1) and having a trench (21) to expose an upper surface of the substrate (1); a first buffer layer (3), formed on the substrate (1) and in the trench (21); and a compound semiconductor layer (4), formed on the first buffer layer (3), wherein an aspect ratio of the trench (21) is larger than 1 and smaller than 10, wherein the first buffer layer (3) is formed by a low-temperature reduced pressure chemical vapor deposition process at a temperature between 200° C. and 500° C., and wherein the compound semiconductor layer (4) is formed by a low-temperature metal organic chemical vapor deposition process at a temperature between 200° C. and 600° C.
    • 提供半导体器件及其形成方法。 半导体器件包括:衬底(1); 形成在所述基板(1)上并具有用于露出所述基板(1)的上表面的沟槽(21)的绝缘层(2); 形成在所述基板(1)和所述沟槽(21)中的第一缓冲层(3); 和形成在第一缓冲层(3)上的化合物半导体层(4),其中沟槽(21)的纵横比大于1且小于10,其中第一缓冲层(3)由 在200℃至500℃之间的温度下进行低温减压化学气相沉积工艺,其中化合物半导体层(4)通过低温金属有机化学气相沉积工艺在200℃ ℃和600℃