会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 25. 发明申请
    • ULTRASONIC PROBE
    • 超声探头
    • US20070145860A1
    • 2007-06-28
    • US11614581
    • 2006-12-21
    • Minoru AokiHiroyuki ShikataTakashi TakeuchiYasuhisa MakitaKoichi Shibamoto
    • Minoru AokiHiroyuki ShikataTakashi TakeuchiYasuhisa MakitaKoichi Shibamoto
    • H01L41/00
    • B06B1/0622A61B8/4281
    • An ultrasonic probe is provided which includes a piezoelectric vibrator having an earth electrode and a signal electrode on a rear surface, an acoustic matching layer disposed on a front surface side of the piezoelectric vibrator, a packing material disposed on the rear surface of the piezoelectric vibrator, and a flexible printed circuit that is interposed between the piezoelectric vibrator and the packing material to cover the entire rear surface of the piezoelectric vibrator and has an earth wiring layer and a signal wiring layer. The earth wiring layer and the signal wiring layer are exposed from a surface facing the piezoelectric vibrator of the flexible printed circuit so as to be electrically connected to the earth electrode and the signal electrode through an exposed surface of the earth wiring layer and an exposed surface of the signal wiring layer, respectively.
    • 提供了一种超声波探头,其包括具有接地电极和后表面上的信号电极的压电振动器,设置在压电振动器的前表面侧的声匹配层,设置在压电振动器的后表面上的包装材料 以及插入在压电振动器和包装材料之间以覆盖压电振动器的整个后表面的柔性印刷电路,并且具有接地布线层和信号布线层。 接地布线层和信号布线层从与柔性印刷电路的压电振动器相对的表面露出,以通过接地布线层的露出表面与接地电极和信号电极电连接, 的信号布线层。
    • 26. 发明申请
    • III- V group compound semiconductor device
    • III-V族化合物半导体器件
    • US20070029640A1
    • 2007-02-08
    • US11302282
    • 2005-12-14
    • Ryota IsonoTakashi Takeuchi
    • Ryota IsonoTakashi Takeuchi
    • H01L29/20
    • H01L29/7787
    • A field effect transistor (FET) with high withstand voltage and high performance is realized by designing a buffer layer structure appropriately to reduce a leakage current to 1×10−9 A or less when a low voltage is applied. An epitaxial wafer for a field effect transistor comprising a buffer layer 2, an active layer, and a contact layer on a semi-insulating substrate 1 from the bottom, and the buffer layer 2 includes a plurality of layers, and a p-type buffer layer composed of p-type AlxGa1−xAs (0.3≦x ≦1) is provided as a bottom layer (undermost layer) 2a. A Nd product of a film thickness of the p-type buffer layer and a p-type carrier concentration of the p-type buffer layer is within a range from 1×1010 to 1×1012/cm2.
    • 当施加低电压时,通过适当地设计缓冲层结构以将漏电流减小到1×10 -9 A或更小来实现具有高耐压和高性能的场效应晶体管(FET)。 一种用于场效应晶体管的外延晶片,包括从底部到半绝缘基板1上的缓冲层2,有源层和接触层,缓冲层2包括多个层,以及p型缓冲层 提供由p型Al x Ga 1-x As As(0.3 <= x <= 1)构成的层作为底层(最下层)2a。 p型缓冲层和所述p型缓冲层的p型载流子浓度的膜厚度的钕产品的范围内从1×10 10 至1×10 12 / cm 2。
    • 30. 发明授权
    • Optimal source distribution
    • 最优源分布
    • US06950524B2
    • 2005-09-27
    • US10312224
    • 2001-06-22
    • Philip Arthur NelsonTakashi Takeuchi
    • Philip Arthur NelsonTakashi Takeuchi
    • H04R5/02H04S1/00H04R5/00H03G5/00H04R29/00
    • H04S5/00H04R1/26H04R2205/024H04S3/002H04S2400/05H04S2420/01
    • A sound reproduction system has pairs of sound emitters that subtend different angles Θ, the span angle, at the listener position. The pairs of sound emitters are arranged to be excited by different frequency bands of the signal output from an inverse filter means (Hh, Hl). The operational span-frequency range of the pairs of sound emitters is determined by an equation (I) where the transducer span Θ is the angle subtended at the listener by a pair of transducers, where O
    • 声音再现系统具有对声音发射器,它们对应于收听者位置处的不同角度Theta,跨度角度。 发声器对被布置成由反向滤波器装置(H H h H 1,H L 1)输出的信号的不同频带激发。 发声器对的操作跨度频率范围由等式(I)确定,其中换能器跨度Theta是由一对换能器对准在倾听者处的角度,其中O :是声速,Deltar:是耳朵之间的等效距离。 声音发射器可以是分立的扬声器单元,不同的单元对定位在不同的跨度角,或者它们由扩展换能器的区域部分(图10)构成。 当使用离散扬声器单元时,使用交叉滤波器(图28)将不同频带中的驱动信号提供给不同的扬声器对。 当使用扩展换能器时,换能器的振动传播特性可以被布置成从位于换能器的较高频率发射端处的激励装置过滤沿换能器传递的振动。