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21. 发明授权

US06589808B2 GaN type semiconductor device 失效
公开(公告)号：US06589808B2
公开(公告)日：2003-07-08
申请号：US09972898
申请日：2001-10-10
申请人： Toshiaki Chiyo , Shizuyo Noiri , Naoki Shibata , Jun Ito
发明人： Toshiaki Chiyo , Shizuyo Noiri , Naoki Shibata , Jun Ito
IPC分类号： H01L2100
CPC分类号： H01L33/12 , H01L33/007 , H01L33/0075 , H01L33/10 , H01L33/405 , H01L33/46
摘要： A GaN type semiconductor layer having a new structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.

22. 发明授权

US07029939B2 P-type semiconductor manufacturing method and semiconductor device 失效
标题翻译： P型半导体制造方法和半导体装置
公开(公告)号：US07029939B2
公开(公告)日：2006-04-18
申请号：US10481057
申请日：2002-06-17
申请人： Toshiaki Chiyo , Naoki Shibata
发明人： Toshiaki Chiyo , Naoki Shibata
IPC分类号： H01L21/22 , H01L21/324
CPC分类号： H01L33/0095 , H01L21/28575 , H01L29/2003 , H01L33/14 , H01L33/32 , H01L33/42
摘要： A p-GaN layer 5 comprising materials such as a Group III nitride compound semiconductor is formed on a sapphire substrate 1 through MOVPE treatment, and a first metal layer 6 made of Co/Au is formed thereon. Then in a planar electron beam irradiation apparatus using plasma, electron beams are irradiated to the p-GaN layer 5 through the first metal layer 6. Accordingly, the first metal layer 6 prevents the surface of the p-GaN layer 5 from being damaged and resistivity of the p-GaN layer 5 can be lowered. Next, a second metal (Ni) layer 10 is formed on the first metal layer 6. And the first metal layer 6 is etched through the second metal layer 10 by using fluoric nitric acid. As a result, the first metal layer is almost completely removed. Then a light-transmitting p-electrode 7 made of Co/Au is formed thereon. As a result, a p-type semiconductor having decreased contact resistance and lower driving voltage can be obtained and optical transmittance factor of the p-type semiconductor improves.
摘要翻译：通过MOVPE处理在蓝宝石衬底1上形成包含III族氮化物化合物半导体的材料的p-GaN层5，在其上形成由Co / Au构成的第一金属层6。然后在使用等离子体的平面电子束照射装置中，电子束通过第一金属层6照射到p-GaN层5。因此，第一金属层6防止p-GaN层5的表面被损坏，并且可以降低p-GaN层5的电阻率。接着，在第一金属层6上形成第二金属（Ni）层10。并且通过使用氟酸硝酸将第一金属层6蚀刻通过第二金属层10。结果，第一金属层几乎被完全去除。然后在其上形成由Co / Au制成的透光p电极7。结果，可以获得具有降低的接触电阻和较低驱动电压的p型半导体，并且p型半导体的光透射率提高。

23. 发明授权

US06943128B2 Method for reducing semiconductor resistance, device for reducing semiconductor resistance and semiconductor element 失效
标题翻译：降低半导体电阻的方法，降低半导体电阻的装置和半导体元件
公开(公告)号：US06943128B2
公开(公告)日：2005-09-13
申请号：US10362513
申请日：2001-08-22
申请人： Toshiaki Chiyo , Naoki Shibata
发明人： Toshiaki Chiyo , Naoki Shibata
IPC分类号： H01L21/263 , H01L21/322 , H01L33/00 , H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477
CPC分类号： H01L33/0095 , H01L21/263 , H01L21/3228
摘要： To lower the electrical resistance of a p-type semiconductor or the operation voltage of a light-emitting/light-receiving semiconductor device. An ion-plasma-type electron-beam irradiation apparatus 100 generates wide-area-radiation electron beams. The thus-generated electron beams are radiated to the outside through a thin metallic plate 108 formed on the outer surface of a beam extraction window 107. A p-type semiconductor is disposed below the beam extraction window 107 such that the p-type semiconductor is disposed about 20 mm away from the electron extraction window so as to be almost parallel to the metallic plate 108. When the surface of the p-type semiconductor is irradiated with electron beams by use of this apparatus, the electrical resistance of the p-type semiconductor can be effectively lowered within a short period of time; i.e., within about three minutes, which is considerably shorter than the time required in the case where a conventional electron-beam irradiation apparatus is employed. No particular limitation is imposed on the area of the beam extraction window 107, and thus wide-area-radiation electron beams are generated, and as a result, scanning with electron beams is not required to be repeated over a long period of time.
摘要翻译：降低p型半导体的电阻或发光/受光半导体器件的工作电压。离子等离子体型电子束照射装置100产生广域辐射电子束。由此产生的电子束通过形成在光束提取窗口107的外表面上的薄金属板108辐射到外部。 p型半导体设置在光束提取窗口107的下方，使得p型半导体布置在离电子提取窗口大约20mm处，以便几乎平行于金属板108。当利用该装置对电子束照射p型半导体的表面时，可以在短时间内有效地降低p型半导体的电阻; 即在大约三分钟内，这比使用传统电子束照射装置的情况所需的时间短得多。对光束提取窗107的面积没有特别限制，因此产生广域辐射电子束，结果，不需要长时间重复用电子束进行扫描。

24. 发明授权

US5753939A Light-emitting semiconductor device using a Group III nitride compound and having a contact layer upon which an electrode is formed 失效
标题翻译：使用III族氮化物化合物并具有形成电极的接触层的发光半导体器件
公开(公告)号：US5753939A
公开(公告)日：1998-05-19
申请号：US813393
申请日：1997-03-07
申请人： Michinari Sassa , Naoki Shibata , Shinya Asami , Masayoshi Koike , Junichi Umezaki , Takahiro Kozawa
发明人： Michinari Sassa , Naoki Shibata , Shinya Asami , Masayoshi Koike , Junichi Umezaki , Takahiro Kozawa
IPC分类号： H01L21/205 , H01L33/02 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/00
CPC分类号： H01L33/38 , H01L33/025 , H01L33/32 , H01L33/325 , H01L33/382 , H01L2933/0016 , H01L33/40
摘要： A light-emitting semiconductor device having an improved metal electrode and semiconductor structure that lowers the driving voltage of the device. The device has a hetero p-n junction structure. This structure includes: (1) an n-layer having n-type conduction and a Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0; (2) a p-layer having p-type conduction and a Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0; and (3) an emission layer disposed between the n-layer and the p-layer. The device also has a metal electrode and a contact layer that is disposed between the p-layer and the metal electrode. The contact layer is doped with an acceptor impurity more heavily that is the p-layer. The acceptor impurity may be magnesium (Mg). The contact layer may be doped within the range of 1.times.10.sup.20 /cm.sup.3 to 1.times.10.sup.2l /cm.sup.3 and may comprise a first and a second contact layer.
摘要翻译：一种具有改善的金属电极和半导体结构的发光半导体器件，其降低了器件的驱动电压。该器件具有异质p-n结结构。该结构包括：（1）具有n型导电的n层和满足式Al x Ga y In 1-x-y N的III族氮化物半导体，包括x = 0，y = 0，x = y = 0; （2）具有p型导电的p层和满足式Al x Ga y In 1-x-y N的III族氮化物半导体，包括x = 0，y = 0，x = y = 0; 和（3）设置在n层和p层之间的发射层。该器件还具有设置在p层和金属电极之间的金属电极和接触层。接触层掺杂较多的受体杂质，即p层。受主杂质可以是镁（Mg）。接触层可以掺杂在1×10 20 / cm 3至1×102l / cm 3的范围内，并且可以包括第一和第二接触层。

25. 发明授权

US5650641A Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device 失效
标题翻译：具有III族氮化物化合物并且能够控制发光颜色的半导体器件，以及包括这种器件的平面显示器
公开(公告)号：US5650641A
公开(公告)日：1997-07-22
申请号：US522110
申请日：1995-08-31
申请人： Michinari Sassa , Masayoshi Koike , Katsuhide Manabe , Norikatsu Koide , Hisaki Kato , Naoki Shibata , Makoto Asai , Shinya Asami
发明人： Michinari Sassa , Masayoshi Koike , Katsuhide Manabe , Norikatsu Koide , Hisaki Kato , Naoki Shibata , Makoto Asai , Shinya Asami
IPC分类号： H01L33/02 , H01L33/32 , H01L33/00
CPC分类号： H01L33/325 , H01L33/025
摘要： A light-emitting semiconductor device (100) suitable for use in multi-color flat panel displays includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x2 Ga.sub.1 -x.sub.2).sub.y2 In.sub.1-2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped p-type (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N emission layer (5), and a Mg-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N p-layer (6). The AlN layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) is about a 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) is about a 2.0 .mu.m in thickness and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The emission layer (5) is about 0.5 .mu.m thick. The p-layer 6 is about 1.0 .mu.m thick and has a 2.times.10.sup.17 /cm.sup.3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). Green light emission is obtained by this constitution. Further, only doping Zn of 5.times.10.sup.19 /cm.sup.3 into the emission layer (5) enables red light emission.
摘要翻译：适用于多色平板显示器的发光半导体器件（100）包括蓝宝石衬底（1），AlN缓冲层（2），掺杂硅（Si）的GaN n +层（3）载流子（n型）浓度，高载流子（n型）浓度的Si掺杂（Alx2Ga1-x2）y2In1-2Nn +层（4），锌（Zn）和掺杂Si的p型（Al x Ga 1 -x1）y1In1-y1N发射层（5）和Mg掺杂（Alx2Ga1-x2）y2In1-y2N p层（6）。 AlN层（2）具有500厚度。 GaN n +层（3）的厚度约为2.0μm，电子浓度为2×10 18 / cm 3。 n +层（4）的厚度约为2.0μm，电子浓度为2×10 18 / cm 3。发射层（5）厚约0.5μm。 p层6的厚度约为1.0μm，空穴浓度为2×10 17 / cm 3。镍电极（7,8）分别连接到p层（6）和n +层（4）。一个凹槽（9）使电极（7,8）电绝缘。通过这种结构获得绿色发光。此外，仅向发射层（5）掺杂5×10 19 / cm 3的Zn使得能够发红光。

26. 发明申请

US20050247949A1 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US20050247949A1
公开(公告)日：2005-11-10
申请号：US10515655
申请日：2003-04-18
申请人： Masanobu Senda , Mitsuhiro Inoue , Jun Ito , Toshimasa Hayashi , Kazuki Nishijima , Naoki Shibata
发明人： Masanobu Senda , Mitsuhiro Inoue , Jun Ito , Toshimasa Hayashi , Kazuki Nishijima , Naoki Shibata
IPC分类号： H01L33/44 , H01L33/06 , H01L33/10 , H01L33/14 , H01L33/32 , H01L33/40 , H01L29/22
CPC分类号： H01L33/40 , H01L33/145 , H01L33/44
摘要： An insulation film 150 made of SiO2 is formed on a p-layer 106, and a multiple thick film positive electrode 120, which is a metal film formed through metal deposition, is formed on the insulation film 150 and on the p-type layer 106 at the central portion of which has a window and is exposed. The insulation film 150 has a thickness of one fourth multiple of emission wavelength. Thickness of the insulation film 150 is generally determined by multiplying one fourth of intramedium emission wavelength by an odd number. By interference effect, directivity of radiated light along the optical axis direction can be improved.
摘要翻译：在p层106上形成由SiO 2构成的绝缘膜150，在绝缘膜150上形成作为通过金属沉积形成的金属膜的多层厚膜正极120 并且在其中心部分具有窗口并被暴露的p型层106上。绝缘膜150具有发射波长的四分之一倍的厚度。绝缘膜150的厚度通常通过将四分之一的内部发射波长乘以奇数来确定。通过干涉效应，可以提高辐射光沿光轴方向的方向性。

27. 发明授权

US06573117B2 GaN related compound semiconductor and process for producing the same 有权
公开(公告)号：US06573117B2
公开(公告)日：2003-06-03
申请号：US10053570
申请日：2002-01-24
申请人： Toshiya Uemura , Naoki Shibata , Shizuyo Noiri , Masanori Murakami , Yasuo Koide , Jun Ito
发明人： Toshiya Uemura , Naoki Shibata , Shizuyo Noiri , Masanori Murakami , Yasuo Koide , Jun Ito
IPC分类号： H01L2100
CPC分类号： H01L33/42 , H01L33/0095 , H01L33/32
摘要： A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and a layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting pattern which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.

28. 发明授权

US06500689B2 Process for producing GaN related compound semiconductor 失效
标题翻译：生产GaN相关化合物半导体的方法
公开(公告)号：US06500689B2
公开(公告)日：2002-12-31
申请号：US09819622
申请日：2001-03-29
申请人： Toshiya Uemura , Naoki Shibata , Shizuyo Noiri , Masanori Murakami , Yasuo Koide , Jun Ito
发明人： Toshiya Uemura , Naoki Shibata , Shizuyo Noiri , Masanori Murakami , Yasuo Koide , Jun Ito
IPC分类号： H01L2128
CPC分类号： H01L33/42 , H01L33/0095 , H01L33/32
摘要： A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and a layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting pattern which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.
摘要翻译：通过气相沉积在p +层上形成包含钴（Co）的层，并且在其上形成包含金（Au）的层。通过热处理将两层合金化以形成透光电极。因此，透光电极具有降低的接触电阻和改善的透光性，并且给出了长时间稳定的发光图案。此外，由于钴（Co）是具有大功函数的元素，因此获得令人满意的欧姆特性。

29. 发明申请

US20060065898A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060065898A1
公开(公告)日：2006-03-30
申请号：US11233113
申请日：2005-09-23
申请人： Masanori Murakami , Teppei Watanabe , Susumu Tsukimoto , Kazuhiro Ito , Jun Ito , Miki Moriyama , Naoki Shibata
发明人： Masanori Murakami , Teppei Watanabe , Susumu Tsukimoto , Kazuhiro Ito , Jun Ito , Miki Moriyama , Naoki Shibata
IPC分类号： H01L29/15
CPC分类号： H01L21/28575 , H01L21/0237 , H01L21/0242 , H01L21/02488 , H01L21/02491 , H01L21/0254 , H01L33/007 , H01L33/12
摘要： In a semiconductor device in which a group III nitride compound semiconductor layer is formed without a low temperature grown buffer layer provided on an undercoat layer formed by a metal nitride layer, the metal nitride layer is formed of reddish brown titanium nitride. The reddish brown titanium nitride can be obtained by causing nitrogen to be rich in the titanium nitride.
摘要翻译：在其中形成III族氮化物化合物半导体层的半导体器件中，没有设置在由金属氮化物层形成的底涂层上的低温生长缓冲层，金属氮化物层由红棕色氮化钛形成。可以通过使氮富含氮化钛来获得微红棕色的氮化钛。

30. 发明授权

US07550782B2 Semiconductor device having an undercoat layer and method of manufacturing the same 有权
标题翻译：具有底涂层的半导体器件及其制造方法
公开(公告)号：US07550782B2
公开(公告)日：2009-06-23
申请号：US11233113
申请日：2005-09-23
申请人： Masanori Murakami , Teppei Watanabe , Susumu Tsukimoto , Kazuhiro Ito , Jun Ito , Miki Moriyama , Naoki Shibata
发明人： Masanori Murakami , Teppei Watanabe , Susumu Tsukimoto , Kazuhiro Ito , Jun Ito , Miki Moriyama , Naoki Shibata
IPC分类号： H01L31/0224
CPC分类号： H01L21/28575 , H01L21/0237 , H01L21/0242 , H01L21/02488 , H01L21/02491 , H01L21/0254 , H01L33/007 , H01L33/12
摘要： In a semiconductor device in which a group III nitride compound semiconductor layer is formed without a low temperature grown buffer layer provided on an undercoat layer formed by a metal nitride layer, the metal nitride layer is formed of reddish brown titanium nitride. The reddish brown titanium nitride can be obtained by causing nitrogen to be rich in the titanium nitride.
摘要翻译：在其中形成III族氮化物化合物半导体层的半导体器件中，没有设置在由金属氮化物层形成的底涂层上的低温生长缓冲层，金属氮化物层由红棕色氮化钛形成。可以通过使氮富含氮化钛来获得微红棕色的氮化钛。

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