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21. 发明授权

US07504313B2 Method for forming plural kinds of wells on a single semiconductor substrate 失效
标题翻译：在单个半导体衬底上形成多种孔的方法
公开(公告)号：US07504313B2
公开(公告)日：2009-03-17
申请号：US11367644
申请日：2006-03-03
申请人： Masato Kijima , Atsushi Harikai
发明人： Masato Kijima , Atsushi Harikai
IPC分类号： H01L21/76
CPC分类号： H01L23/544 , H01L21/823892 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for forming plural kinds of wells on a single semiconductor substrate with an improved alignment accuracy and obviating the generation of step height between the wells. The method includes forming a selective etching film on the semiconductor substrate, forming openings on the selective etching film overlying a first well forming region and an alignment mark forming region using a first resist film as a mask for defining the first well forming region and the alignment mark forming region, implanting the first well forming region with a dopant of a first conductivity type and removing the first resist film, forming a second resist film to mask at least the first well forming region, having an opening overlying the alignment mark forming region larger than the opening of the selective etching film overlying the same region, and forming the alignment mark by performing an etching process using the second resist film and selective etching film as a mask.
摘要翻译：提供了一种用于在单个半导体衬底上形成多种孔的方法，其具有改进的对准精度并避免了在井之间产生台阶高度。该方法包括在半导体衬底上形成选择性蚀刻膜，在第一阱形成区域上形成选择性蚀刻膜上的开口，使用第一抗蚀剂膜作为掩模形成对准标记形成区域，用于限定第一阱形成区域和对准标记形成区域，用第一导电类型的掺杂剂注入第一阱形成区域并去除第一抗蚀剂膜，形成第二抗蚀剂膜以至少掩蔽第一阱形成区域，具有覆盖对准标记形成区域的开口较大比通过相同区域上的选择性蚀刻膜的打开，并且通过使用第二抗蚀剂膜和选择性蚀刻膜作为掩模进行蚀刻工艺来形成对准标记。

22. 发明申请

US20070215949A1 Semiconductor device including MOS transistor having LOCOS offset structure and manufacturing method thereof 审中-公开
标题翻译：包括具有LOCOS偏移结构的MOS晶体管的半导体器件及其制造方法
公开(公告)号：US20070215949A1
公开(公告)日：2007-09-20
申请号：US11724428
申请日：2007-03-15
申请人： Masato Kijima
发明人： Masato Kijima
IPC分类号： H01L23/62
CPC分类号： H01L27/088 , H01L21/823412 , H01L21/823418 , H01L21/823814 , H01L21/823892 , H01L27/0922 , H01L29/1083 , H01L29/42368 , H01L29/6659 , H01L29/66659 , H01L29/7833 , H01L29/7835
摘要： A disclosed semiconductor device includes: a semiconductor substrate; at least one normal transistor disposed on the semiconductor substrate; and at least one LOCOS offset transistor disposed on the semiconductor substrate. The normal transistor has an LDD region between a channel and a source and between the channel and a drain. And the LOCOS offset transistor has no LDD region between a channel and a source and between the channel and a drain.
摘要翻译：所公开的半导体器件包括：半导体衬底; 设置在半导体衬底上的至少一个正常晶体管; 以及设置在半导体衬底上的至少一个LOCOS偏移晶体管。正常晶体管在通道和源极之间以及通道和漏极之间具有LDD区域。而LOCOS偏移晶体管在通道和源极之间以及通道和漏极之间没有LDD区域。

23. 发明授权

US07199202B2 Propylene polymer and composition containing the same, molded object and laminate comprising these, and processes for producing propylene polymer and composition containing the same 有权
标题翻译：丙烯聚合物和含有它们的组合物，包含它们的成型体和层压材料，以及制备丙烯聚合物的方法和含有它们的组合物
公开(公告)号：US07199202B2
公开(公告)日：2007-04-03
申请号：US10855964
申请日：2004-05-28
申请人： Yutaka Minami , Masato Kijima , Takuji Okamoto , Yasushi Seta , Yasuhiro Mogi , Tsuyoshi Ota , Hideo Funabashi , Takashi Kashiwamura , Noriyuki Tani , Masami Kanamaru , Koji Kakigami
发明人： Yutaka Minami , Masato Kijima , Takuji Okamoto , Yasushi Seta , Yasuhiro Mogi , Tsuyoshi Ota , Hideo Funabashi , Takashi Kashiwamura , Noriyuki Tani , Masami Kanamaru , Koji Kakigami
IPC分类号： C08F110/06 , C08F4/52 , C08F4/76
CPC分类号： C07F17/00 , C08F4/65904 , C08F4/65912 , C08F4/65916 , C08F10/00 , C08F10/06 , C08F110/06 , C08F210/06 , C08F210/16 , C08J5/18 , C08J2323/10 , C08L23/02 , C08L23/10 , C08L23/12 , C08L2205/02 , C08L2314/06 , Y10S526/943 , C08F2/001 , C08F4/65927 , C08F2/44 , C08L2666/04 , C08F2500/15 , C08F2500/17 , C08F2500/03 , C08F2500/12 , C08F2500/26 , C08F2500/20 , C08F210/08 , C08F210/14
摘要： A propylenic polymer according to the present invention or a composition thereof have an excellent melt flowability and contains a less amount of stickiness-causing components, and also has a low modulus and is pliable, and is capable of providing a transparent molded article, thus being useful as a substitute for a pliable vinyl chloride resin. In addition, a molded article made therefrom exhibits an excellent heat seal performance at a low temperature, and is excellent in terms of transparency and rigidity. Specifically, it has an isotactic pentad fraction (mmmm), which indicates a stereoregulariry, of 30 to 80%, a molecular weight distribution (Mw/Mn) of 3.5 or less and an intrinsic viscosity [η] of 0.8 to 5 dl/g.
摘要翻译：根据本发明的丙烯聚合物或其组合物具有优异的熔体流动性并且含有较少量的粘着性成分，并且还具有低模量和柔韧性，并且能够提供透明模制品，因此是可用作柔性氯乙烯树脂的替代物。此外，由其制成的模制品在低温下表现出优异的热封性能，并且在透明性和刚性方面优异。具体地说，其具有30至80％的立体有规配比的全同立构五单元组分数（mmmm），3.5或更小的分子量分布（Mw / Mn）和特性粘度η为0.8至5dl / g 。

24. 发明授权

US06784250B2 Resin composition for calendering and polyolefin material for leather-like article 有权
标题翻译：用于压延的树脂组合物和类似皮革制品的聚烯烃材料
公开(公告)号：US06784250B2
公开(公告)日：2004-08-31
申请号：US10276332
申请日：2002-11-26
申请人： Masato Kijima
发明人： Masato Kijima
IPC分类号： C08L2302
CPC分类号： C08L23/10 , C08F110/06 , C08L23/02 , C08L2314/06 , Y10T428/31855 , C08L2666/04 , C08F2500/15 , C08F2500/16
摘要： The present invention provides a resin composition for calender formation containing [I] a propylene polymer in an amount of 1 to 99 mass %, and [II] an olefin-based polymer in an amount of 99 to 1 mass %, wherein [I] the propylene polymer satisfies the following requirements of: (1) a meso pentad fraction (mmmm) is 0.2 to 0.6, and (2) a racemic pentad fraction (rrrr) and (1−mmmm) satisfy the following relation: [rrrr/(1−mmmm)]≦0.1. A material for polyolefin-based leather tone product containing a polyolefin resin layer by the use of the resin composition for calender formation is also proposed. According to the resin composition of the present invention, a resin composition for calender formation, a material for polyolefin-based leather tone product being superior in molding ability, being environmentally friendly, with little sticking and being superior in flexibility and transparency are achieved.
摘要翻译：本发明提供一种含有1〜99质量％丙烯聚合物[I]和[II] 99〜1质量％的烯烃系聚合物的砑光成型用树脂组合物，其中[I] 丙烯聚合物满足以下要求：（1）内消旋五单元组分（mmmm）为0.2〜0.6，（2）外消旋五单元组分（rrrr）和（1-mmmm）满足以下关系：[rrrr /（ 1-mmmm）] <= 0.1。还提出了通过使用用于压延机形成的树脂组合物含有聚烯烃树脂层的聚烯烃类皮革色调产品的材料。根据本发明的树脂组合物，可以实现压延成型用树脂组合物，成型性优异的聚烯烃系皮革色调成分的材料，环保，粘着力小，柔软性和透明性优异。

25. 发明授权

US06525624B1 Band-switchable surface acoustic wave antenna duplexer and mobile radio terminal 失效
标题翻译：带可切换声表面波天线双工器和移动无线终端
公开(公告)号：US06525624B1
公开(公告)日：2003-02-25
申请号：US09643769
申请日：2000-08-23
申请人： Mitsutaka Hikita , Nobuhiko Shibagaki , Kazuyuki Sakiyama , Masato Kijima , Osamu Hikino
发明人： Mitsutaka Hikita , Nobuhiko Shibagaki , Kazuyuki Sakiyama , Masato Kijima , Osamu Hikino
IPC分类号： H03H972
CPC分类号： H03H9/725 , H03H7/0161 , H03H7/1708 , H03H7/175 , H03H7/1758 , H03H7/1766 , H03H7/1775 , H03H7/465 , H03H9/0576 , H03H9/72
摘要： A surface acoustic wave antenna duplexer constituted by a transmitter-line filter, a receiver-line filter and an antenna terminal, the transmitter-line filter and the receiver-line filter being connected in parallel with the antenna terminal as a common terminal; wherein at least one of the transmitter-line and receiver-line filters includes a top filter using the whole of a transmitter band or a receiver band as its pass band, a surface acoustic wave resonator filter, and a transmitter or receiver terminal, the top filter, the surface acoustic wave resonator filter and the transmitter or receiver terminal being disposed in this order viewed from the antenna terminal, the surface acoustic wave resonator filter including at least one additive capacitance or inductance; and wherein a switching element is provided for varying a value of the capacitance or inductance so as to provide a function for varying a pass band frequency or an attenuation band frequency of the surface acoustic wave resonator filter.
摘要翻译：由发射机线路滤波器，接收机线路滤波器和天线端子构成的表面声波天线双工器，发射机线路滤波器和接收机线路滤波器作为公共端子与天线端子并联连接; 其中发射机线路和接收机线路滤波器中的至少一个包括使用整个发射机频带或接收机频带作为其通带的顶部滤波器，表面声波谐振器滤波器和发射机或接收机终端，顶部滤波器，表面声波谐振器滤波器以及从天线端子依次设置的发射机或接收机终端，所述表面声波谐振器滤波器包括至少一个附加电容或电感; 并且其中提供开关元件用于改变电容或电感的值，以提供用于改变表面声波谐振器滤波器的通带频率或衰减频带频率的功能。

26. 发明授权

US07544758B2 Propylene polymer and composition containing the same, molded object and laminate comprising these, and processes for producing propylene polymer and composition containing the same 有权
标题翻译：丙烯聚合物和含有它们的组合物，包含它们的成型体和层压材料，以及制备丙烯聚合物的方法和含有它们的组合物
公开(公告)号：US07544758B2
公开(公告)日：2009-06-09
申请号：US11514257
申请日：2006-09-01
申请人： Yutaka Minami , Masato Kijima , Takuji Okamoto , Yasushi Seta , Yasuhiro Mogi , Tsuyoshi Ota , Hideo Funabashi , Takashi Kashiwamura , Noriyuki Tani , Masami Kanamaru , Koji Kakigami
发明人： Yutaka Minami , Masato Kijima , Takuji Okamoto , Yasushi Seta , Yasuhiro Mogi , Tsuyoshi Ota , Hideo Funabashi , Takashi Kashiwamura , Noriyuki Tani , Masami Kanamaru , Koji Kakigami
IPC分类号： C08F110/06 , C08F10/06
CPC分类号： C07F17/00 , C08F4/65904 , C08F4/65912 , C08F4/65916 , C08F10/00 , C08F10/06 , C08F110/06 , C08F210/06 , C08F210/16 , C08J5/18 , C08J2323/10 , C08L23/02 , C08L23/10 , C08L23/12 , C08L2205/02 , C08L2314/06 , Y10S526/943 , C08F2/001 , C08F4/65927 , C08F2/44 , C08L2666/04 , C08F2500/15 , C08F2500/17 , C08F2500/03 , C08F2500/12 , C08F2500/26 , C08F2500/20 , C08F210/08 , C08F210/14
摘要： A propylenic polymer according to the present invention or a composition thereof have an excellent melt flowability and contains a less amount of stickiness-causing components, and also has a low modulus and is pliable, and is capable of providing a transparent molded article, thus being useful as a substitute for a pliable vinyl chloride resin. In addition, a molded article made therefrom exhibits an excellent heat seal performance at a low temperature, and is excellent in terms of transparency and rigidity. Specifically, it has an isotactic pentad fraction (mmmm), which indicates a stereoregulariry, of 30 to 80%, a molecular weight distribution (Mw/Mn) of 3.5 or less and an intrinsic viscosity [η] of 0.8 to 5 dl/g.
摘要翻译：根据本发明的丙烯聚合物或其组合物具有优异的熔体流动性并且含有较少量的粘着性成分，并且还具有低模量和柔韧性，并且能够提供透明模制品，因此是可用作柔性氯乙烯树脂的替代物。此外，由其制成的模制品在低温下表现出优异的热封性能，并且在透明性和刚性方面优异。具体地说，其具有30至80％的立构规整性的全同立构五单元组分数（mmmm），3.5或更小的分子量分布（Mw / Mn）和特性粘度η为0.8至5dl / g 。

27. 发明授权

US07419893B2 Method of manufacturing semiconductor device having triple-well structure and semiconductor device fabricated 失效
标题翻译：制造具有三阱结构的半导体器件和半导体器件的制造方法
公开(公告)号：US07419893B2
公开(公告)日：2008-09-02
申请号：US11386299
申请日：2006-03-21
申请人： Masato Kijima
发明人： Masato Kijima
IPC分类号： H01L21/425
CPC分类号： H01L27/0928 , H01L21/823892
摘要： This patent specification describes methods for fabricating semiconductor device having a plurality of well structures including a triple-well structure. One example of a method for fabricating semiconductor device includes forming a thermally stable film on a first conductivity type substrate, forming a first resist film having an opening at a position corresponding to a first well forming area on the thermally stable film, removing the thermally stable film selectively by masking with the first resist film so as to make a neutering mask, implanting a second conductivity type impurity into the first well forming area by masking with the neutering mask and the first resist film, removing the first resist film, forming a second conductivity type well by diffusing and activating the second conductivity type impurity implanted into the first well forming area with a heating process, and implanting a first conductivity type impurity into a surface region of the first well forming area by masking with the neutering mask.
摘要翻译：该专利说明书描述了制造具有包括三阱结构的多个阱结构的半导体器件的方法。制造半导体器件的方法的一个实例包括在第一导电型衬底上形成热稳定膜，在对应于热稳定膜上的第一阱形成区域的位置处形成具有开口的第一抗蚀剂膜，除去热稳定性通过用第一抗蚀剂膜掩蔽以形成绝缘掩模，通过用掩蔽掩模和第一抗蚀剂膜将第二导电类型杂质注入到第一阱形成区域中，选择性地选择膜，去除第一抗蚀剂膜，形成第二抗蚀剂膜通过用加热工艺扩散和激活注入到第一阱形成区域中的第二导电类型杂质，并且通过用绝缘掩模掩蔽将第一导电类型杂质注入到第一阱形成区域的表面区域中很好地导电型。

28. 发明申请

US20060293471A1 Propylene polymer and composition containing the same, molded object and laminate comprising these, and processes for producing propylene polymer and composition containing the same 有权
公开(公告)号：US20060293471A1
公开(公告)日：2006-12-28
申请号：US11514257
申请日：2006-09-01
申请人： Yutaka Minami , Masato Kijima , Takuji Okamoto , Yasushi Seta , Yasuhiro Mogi , Tsuyoshi Ota , Hideo Funabashi , Takashi Kashiwamura , Noriyuki Tani , Masami Kanamaru , Koji Kakigami
发明人： Yutaka Minami , Masato Kijima , Takuji Okamoto , Yasushi Seta , Yasuhiro Mogi , Tsuyoshi Ota , Hideo Funabashi , Takashi Kashiwamura , Noriyuki Tani , Masami Kanamaru , Koji Kakigami
IPC分类号： C08F4/44
CPC分类号： C07F17/00 , C08F4/65904 , C08F4/65912 , C08F4/65916 , C08F10/00 , C08F10/06 , C08F110/06 , C08F210/06 , C08F210/16 , C08J5/18 , C08J2323/10 , C08L23/02 , C08L23/10 , C08L23/12 , C08L2205/02 , C08L2314/06 , Y10S526/943 , C08F2/001 , C08F4/65927 , C08F2/44 , C08L2666/04 , C08F2500/15 , C08F2500/17 , C08F2500/03 , C08F2500/12 , C08F2500/26 , C08F2500/20 , C08F210/08 , C08F210/14
摘要： A propylenic polymer according to the present invention or a composition thereof have an excellent melt flowability and contains a less amount of stickiness-causing components, and also has a low modulus and is pliable, and is capable of providing a transparent molded article, thus being useful as a substitute for a pliable vinyl chloride resin. In addition, a molded article made therefrom exhibits an excellent heat seal performance at a low temperature, and is excellent in terms of transparency and rigidity. Specifically, it has an isotactic pentad fraction (mmmm), which indicates a stereoregulariry, of 30 to 80%, a molecular weight distribution (Mw/Mn) of 3.5 or less and an intrinsic viscosity [η] of 0.8 to 5 dl/g.

29. 发明申请

US20060216883A1 Method of manufacturing semiconductor device having triple-well structure and semiconductor device fabricated 失效
标题翻译：制造具有三阱结构的半导体器件和半导体器件的制造方法
公开(公告)号：US20060216883A1
公开(公告)日：2006-09-28
申请号：US11386299
申请日：2006-03-21
申请人： Masato Kijima
发明人： Masato Kijima
IPC分类号： H01L21/8238
CPC分类号： H01L27/0928 , H01L21/823892
摘要： This patent specification describes methods for fabricating semiconductor device having a plurality of well structures including a triple-well structure. One example of a method for fabricating semiconductor device includes forming a thermally stable film on a first conductivity type substrate, forming a first resist film having an opening at a position corresponding to a first well forming area on the thermally stable film, removing the thermally stable film selectively by masking with the first resist film so as to make a neutering mask, implanting a second conductivity type impurity into the first well forming area by masking with the neutering mask and the first resist film, removing the first resist film, forming a second conductivity type well by diffusing and activating the second conductivity type impurity implanted into the first well forming area with a heating process, and implanting a first conductivity type impurity into a surface region of the first well forming area by masking with the neutering mask.
摘要翻译：该专利说明书描述了制造具有包括三阱结构的多个阱结构的半导体器件的方法。制造半导体器件的方法的一个实例包括在第一导电型衬底上形成热稳定膜，在对应于热稳定膜上的第一阱形成区域的位置处形成具有开口的第一抗蚀剂膜，除去热稳定性通过用第一抗蚀剂膜掩蔽以形成绝缘掩模，通过用掩蔽掩模和第一抗蚀剂膜将第二导电类型杂质注入到第一阱形成区域中，选择性地选择膜，去除第一抗蚀剂膜，形成第二抗蚀剂膜通过用加热工艺扩散和激活注入到第一阱形成区域中的第二导电类型杂质，并且通过用绝缘掩模掩蔽将第一导电类型杂质注入到第一阱形成区域的表面区域中很好地导电型。

30. 发明申请

US20060205139A1 Method for forming plural kinds of wells on a single semiconductor substrate 失效
公开(公告)号：US20060205139A1
公开(公告)日：2006-09-14
申请号：US11367644
申请日：2006-03-03
申请人： Masato Kijima , Atsushi Harikai
发明人： Masato Kijima , Atsushi Harikai
IPC分类号： H01L21/8238
CPC分类号： H01L23/544 , H01L21/823892 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for forming plural kinds of wells on a single semiconductor substrate with an improved alignment accuracy and obviating the generation of step height between the wells. The method includes forming a selective etching film on the semiconductor substrate, forming openings on the selective etching film overlying a first well forming region and an alignment mark forming region using a first resist film as a mask for defining the first well forming region and the alignment mark forming region, implanting the first well forming region with a dopant of a first conductivity type and removing the first resist film, forming a second resist film to mask at least the first well forming region, having an opening overlying the alignment mark forming region larger than the opening of the selective etching film overlying the same region, and forming the alignment mark by performing an etching process using the second resist film and selective etching film as a mask.

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