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21. 发明授权

US06170332B2 Micromechanical accelerometer for automotive applications 有权
标题翻译：用于汽车应用的微机械加速度计
公开(公告)号：US06170332B2
公开(公告)日：2001-01-09
申请号：US09552578
申请日：2000-04-19
申请人： Noel C. MacDonald , Kevin A. Shaw , Scott G. Adams
发明人： Noel C. MacDonald , Kevin A. Shaw , Scott G. Adams
IPC分类号： G01P1508
CPC分类号： G01P15/131 , B81B2201/0235 , B81B2203/051 , B81C1/00619 , B81C2201/0132 , G01P1/006 , G01P15/0802 , G01P15/125 , G01P2015/0814 , G01P2015/0817
摘要： A micromechanical capacitive accelerometer is provided from a single silicon wafer. The basic structure of the micromechanical accelerometer is etched in the wafer to form a released portion in the substrate, and the released and remaining portions of the substrate are coated with metal under conditions sufficient to form a micromechanical capacitive accelerometer. The substrate is preferably etched using reactive-ion etching for at least the first etch step in the process that forms the basic structure, although in another preferred embodiment, all etching is reactive-ion etching. The accelerometer also may comprise a signal-conditioned accelerometer wherein signal-conditioning circuitry is provided on the same wafer from which the accelerometer is formed, and VLSI electronics may be integrated on the same wafer from which the accelerometer is formed. The micromechanical capacitive accelerometer can be used for airbag deployment, active suspension control, active steering control, anti-lock braking, and other control systems requiring accelerometers having high sensitivity, extreme accuracy and resistance to out of plane forces.
摘要翻译：从单个硅晶片提供微机电电容式加速度计。在晶片中蚀刻微机械加速度计的基本结构，以在衬底中形成释放部分，并且在足以形成微机械电容式加速度计的条件下，用金属涂覆衬底的释放和剩余部分。在形成基本结构的工艺中，优选使用反应离子蚀刻对至少第一蚀刻步骤蚀刻衬底，尽管在另一优选实施例中，所有蚀刻都是反应离子蚀刻。加速度计还可以包括信号调节加速度计，其中信号调节电路设置在与其形成加速度计的同一晶片上，并且VLSI电子器件可以集成在形成加速度计的相同晶片上。微机电容加速度计可用于安全气囊部署，主动悬架控制，主动转向控制，防抱死制动以及需要具有高灵敏度，极高精度和抗平面外力的加速度计的其他控制系统。

22. 发明授权

US6000280A Drive electrodes for microfabricated torsional cantilevers 失效
标题翻译：用于微加工的扭转悬臂的驱动电极
公开(公告)号：US6000280A
公开(公告)日：1999-12-14
申请号：US45573
申请日：1998-03-23
申请人： Scott A. Miller , Kimberly L. Turner , Noel C. MacDonald
发明人： Scott A. Miller , Kimberly L. Turner , Noel C. MacDonald
IPC分类号： G01B5/28 , G01P15/125 , G01P15/13 , G01Q70/02
CPC分类号： G01P15/131 , G01B5/28 , G01P15/125 , B82Y35/00 , G01P2015/0831 , Y10S977/872
摘要： A comb-type actuator for movable microelectromechanical structures includes first and second asymmetric sets of interdigitated fingers. Asymmetry is obtained by fabricating on set of fingers to have a greater height than the other set, or by providing electrically insulating segments in one set. Application of a voltage across the sets produces an asymmetric field between them and produces relative motion.
摘要翻译：用于可移动微机电结构的梳状致动器包括第一和第二不对称的指状指状物组。通过在一组手指上制造具有比另一组更大的高度，或者通过在一组中提供电绝缘片而获得不对称性。在两组之间施加电压会在它们之间产生不对称的场并产生相对运动。

23. 发明授权

US5627427A Silicon tip field emission cathodes 失效
标题翻译：硅尖场发射阴极
公开(公告)号：US5627427A
公开(公告)日：1997-05-06
申请号：US464532
申请日：1995-06-05
申请人： John H. Das , Noel C. MacDonald , James W. Mayer , James P. Spallas
发明人： John H. Das , Noel C. MacDonald , James W. Mayer , James P. Spallas
IPC分类号： H01J1/304 , H01J9/02 , H01J1/46
CPC分类号： H01J9/025 , H01J1/3042 , H01J2201/30426
摘要： A micrometer scale emitter tip or array is disclosed having precisely located tips and surrounding gates. A silicide on the tips reduces tip work function.
摘要翻译：公开了一种千分尺发射器尖端或阵列，其具有精确定位的尖端和周围的栅极。尖端上的硅化物减少了尖端功能。

24. 发明授权

US5615143A Optomechanical terabit data storage system 失效
标题翻译：光机械千兆数据存储系统
公开(公告)号：US5615143A
公开(公告)日：1997-03-25
申请号：US308803
申请日：1994-09-19
申请人： Noel C. MacDonald , Yu-hwa Lo
发明人： Noel C. MacDonald , Yu-hwa Lo
IPC分类号： G11B9/00 , G11B9/04 , G11B11/00 , G11B11/08 , G11C13/00
CPC分类号： B82Y10/00 , G11B11/007 , G11B11/08 , G11B9/04 , G11B9/14 , G11B9/1409
摘要： An ultra-high density optical storage system includes an array of nanometer-scale emitter tips which are associated with corresponding storage surfaces. The tips are optically selectively activated to produce data features simultaneously on their corresponding storage surfaces, with the resulting data features having diameters approximately the same as the diameters of the emitter tips. The array is scannable to selected locations, whereby a data set can be stored in parallel at each location. Because of the small size of the data features, the locations of adjacent features can be spaced apart by a distance on the order of 10 nm for ultradense storage.Stored data can be selectively read out optically by positioning the emitter tip array at the location of the data set to be read and directing light onto the storage surfaces for each tip. Light reflected from the surfaces will correspond to the presence or absence of a data feature at each tip for parallel readout. Alternatively, each storage surface may be a part of a corresponding light emitter activated by the presence or absence of a feature.
摘要翻译：超高密度光学存储系统包括与对应的存储表面相关联的纳米级发射器尖端的阵列。光学选择性地激活尖端以在其相应的存储表面上同时产生数据特征，所得到的数据特征具有与发射极尖端的直径大致相同的直径。阵列可扫描到选定的位置，从而可以在每个位置并行存储数据集。由于数据特征的小尺寸，相邻特征的位置可以间隔10纳米的距离用于超声存储。通过将发射器尖端阵列定位在要读取的数据集的位置并将光引导到每个尖端的存储表面上，可以有选择地读出存储的数据。从表面反射的光将对应于每个尖端处的数据特征的存在或不存在用于并行读出。或者，每个存储表面可以是由特征的存在或不存在激活的对应的光发射器的一部分。

25. 发明授权

US5399415A Isolated tungsten microelectromechanical structures 失效
标题翻译：隔离钨微机电结构
公开(公告)号：US5399415A
公开(公告)日：1995-03-21
申请号：US71260
申请日：1993-06-04
申请人： Liang-Yu Chen , Noel C. MacDonald
发明人： Liang-Yu Chen , Noel C. MacDonald
IPC分类号： B81B3/00 , B81C99/00 , G01P15/08 , H02N1/00 , B32B9/00
CPC分类号： B81C1/00214 , B81B3/0086 , G01P15/0802 , H02N1/006 , H02N1/008 , B81B2201/13 , B81B2203/0118 , B81B2203/0315 , G01P2015/0814 , Y10T428/24917 , Y10T428/24926
摘要： A process for fabricating mechanically interconnected, released, electrically isolated metal microstructures, and circuit components and actuators produced by the process. A dielectric stack on a substrate is patterned and etched to produce trenches in which a metal such as tungsten is deposited. The dielectric is removed from selected regions of the metal to expose metal beams, and to form mechanically interconnecting, electrically insulating hinges supporting the beams. The beams and hinges are then released for relative motion. Electrical potentials may be established between adjacent beams to produce controlled motion.
摘要翻译：用于制造机械互连，释放，电隔离的金属微结构的工艺，以及由该工艺制造的电路部件和致动器。图案化并蚀刻衬底上的电介质堆叠以产生其中沉积诸如钨的金属的沟槽。电介质从金属的选定区域去除以暴露金属梁，并形成支撑梁的机械互连的电绝缘铰链。然后释放梁和铰链以进行相对运动。可以在相邻光束之间建立电势以产生受控的运动。

26. 发明授权

US5149673A Selective chemical vapor deposition of tungsten for microdynamic structures 失效
标题翻译：用于微动力结构的钨的选择性化学气相沉积
公开(公告)号：US5149673A
公开(公告)日：1992-09-22
申请号：US762492
申请日：1991-09-19
申请人： Noel C. MacDonald , Liang-Yuh Chen , Zuoying L. Zhang
发明人： Noel C. MacDonald , Liang-Yuh Chen , Zuoying L. Zhang
IPC分类号： H01H1/00 , H01L21/285 , H02N1/00
CPC分类号： H02N1/008 , B82Y15/00 , H01H1/0094
摘要： A selective chemical vapor deposition (CVD) tungsten process is used to fabricate three-dimensional tungsten cantilever beams on a substrate. Two beams form micromechanical tweezers that move in three dimensions by the application of potential differences between the beams, and between the beams and the silicon substrate. A high deposition rate selective tungsten CVD process is used to fabricate beams of greater than 3 micrometers thickness in patterned, CVD silicon dioxide trenches ion-implanted with silicon. Tweezers 200 micrometers in length with a cross section of 2.7 by 2.5 micrometers will close upon application of a voltage of less than 150 volts.
摘要翻译：使用选择性化学气相沉积（CVD）钨工艺在衬底上制造三维钨悬臂梁。两个光束形成微机械镊子，其通过施加光束之间以及光束和硅衬底之间的电位差在三维中移动。使用高沉积速率选择性钨CVD工艺来制造离子注入硅的图案化CVD二氧化硅沟槽中大于3微米厚度的光束。长度为200微米，截面为2.7×2.5微米的镊子将在施加小于150伏的电压时闭合。

27. 发明申请

US20100086734A1 NANOSTRUCTURED TITANIA 有权
公开(公告)号：US20100086734A1
公开(公告)日：2010-04-08
申请号：US11397165
申请日：2006-04-04
申请人： Zuruzi Abu Samah , Noel C. MacDonald , Marcus Ward , Martin Moskovits , Andrei Kolmakov , Cyrus R. Safinya
发明人： Zuruzi Abu Samah , Noel C. MacDonald , Marcus Ward , Martin Moskovits , Andrei Kolmakov , Cyrus R. Safinya
IPC分类号： B32B3/10 , C23C16/40
CPC分类号： G01N27/125 , Y10S977/781 , Y10S977/784 , Y10S977/811 , Y10S977/888 , Y10S977/89 , Y10T428/24331
摘要： A method and device of nanostructured titania that is crack free. A method in accordance with the present invention comprises depositing a Ti film on a surface, depositing a masking layer on the Ti film, etching said masking layer to expose a limited region of the Ti film, the limited region being of an area less than a threshold area, oxidizing the exposed limited region of the Th.ucsbi film, and annealing the exposed limited region of the Ti film.
摘要翻译：纳米结构二氧化钛无裂纹的方法和装置。根据本发明的方法包括在表面上沉积Ti膜，在Ti膜上沉积掩模层，蚀刻所述掩模层以暴露Ti膜的有限区域，该有限区域的面积小于氧化暴露的Th.ucsbi膜的限制区域，并退火Ti膜的暴露的限制区域。

28. 发明授权

US07569411B2 Metal MEMS devices and methods of making same 有权
标题翻译：金属MEMS器件及其制造方法
公开(公告)号：US07569411B2
公开(公告)日：2009-08-04
申请号：US11625758
申请日：2007-01-22
申请人： Noel C. MacDonald , Marco F. Aimi
发明人： Noel C. MacDonald , Marco F. Aimi
IPC分类号： H01L22/00
CPC分类号： C23F4/00 , B81C1/00492 , B81C2201/0132
摘要： Metal MEMS structures are fabricated from metal substrates, preferably titanium, utilizing micromachining processes with a new deep etching procedure to provide released microelectromechanical devices. The deep etch procedure includes metal anisotropic reactive ion etching utilizing repetitive alternating steps of etching and side wall protection. Variations in the timing of the etching and protecting steps produces walls of different roughness and taper. The metal wafers can be macomachined before forming the MEMS structures, and the resulting wafers can be stacked and bonded in packages.
摘要翻译：金属MEMS结构由金属基底（优选钛）制成，利用微加工工艺和新的深刻蚀工艺来提供释放的微机电装置。深蚀刻程序包括利用重复的蚀刻和侧壁保护的交替步骤的金属各向异性反应离子蚀刻。蚀刻和保护步骤的时间变化产生不同粗糙度和锥度的壁。在形成MEMS结构之前，金属晶片可以被加工，并且所得到的晶片可以堆叠并结合成封装。

29. 发明授权

US06727778B2 Transmission line structures for use as phase shifters and switches 失效
标题翻译：用作移相器和开关的传输线结构
公开(公告)号：US06727778B2
公开(公告)日：2004-04-27
申请号：US09874365
申请日：2001-06-06
申请人： Thomas D. Kudrle , Hercules P. Neves , Damien C. Rodger , Noel C. MacDonald
发明人： Thomas D. Kudrle , Hercules P. Neves , Damien C. Rodger , Noel C. MacDonald
IPC分类号： H01P504
CPC分类号： H01P1/12 , H01H59/0009 , H01P1/18
摘要： Suspended single crystal silicon (SCS) beams coated with metal form transmission lines that are used in MEMs type microactuated phase shifters and switches. The characteristic impedance of any section of the transmission lines is a function of the beam spacing in that section. Microactuators, such as comb-drive actuators, are connected to the beams to vary this spacing in a controllable manner. A continuos phase shifter is formed that consists of two tunable capacitance sections connected by a matching section that reduces reflections and improves compliance of the beams to reduce the energy required to move the beams.
摘要翻译：悬挂的单晶硅（SCS）光束涂覆有金属形式的传输线，用于MEM型微致动移相器和开关。传输线的任何部分的特征阻抗是该部分中光束间隔的函数。诸如梳状驱动致动器的微致动器连接到梁以可控的方式改变该间隔。形成连续移相器，其由通过匹配部分连接的两个可调谐电容部分组成，该部分减少反射并改善光束的柔顺性以减少移动光束所需的能量。

30. 发明授权

US06497141B1 Parametric resonance in microelectromechanical structures 失效
标题翻译：微机电结构中的参数共振
公开(公告)号：US06497141B1
公开(公告)日：2002-12-24
申请号：US09586976
申请日：2000-06-05
申请人： Kimberly L. Turner , Noel C. MacDonald
发明人： Kimberly L. Turner , Noel C. MacDonald
IPC分类号： G01B734
CPC分类号： H03H9/2405 , G01P2015/0814 , H03H2009/02496 , H03H2009/02511 , H03H2009/02519 , H03H2009/02527
摘要： MEM structures which may be driven at parametric frequencies to provide stable operation and to permit precise switching between stable and unstable operations by very small changes in the drive frequency or by very small changes in the characteristics of the structure itself so as to provide improved control and sensing are disclosed. The techniques of the present invention are applicable to a wide variety of microstructures, including parallel plate linear actuators, reduction and augmentation actuators, linear force comb actuators, and in particular to torsional scanning probe z-actuators having an integrated tip. These devices incorporate capacitive actuators, or drivers, for producing mechanical motion, and more particularly comb-type actuator structures which consist of high aspect ratio MEM beams fabricated as interleaved fixed and movable capacitor fingers. The capacitive actuator structures can be used either for sensing displacements or inducing motion, the capacitive plates of the fixed and movable fingers allowing a wide range of motion and high amplitudes without failure. Such micromechanical torsional resonators obey the Mathieu equation, and are driven by a suitable driving force such as an AC driver to resonate at frequencies other than their natural frequencies of resonance with a sharp transition between stable and unstable operation. The devices may be switched between stable and unstable operation by very small changes in the physical characteristics, or parameters, of the devices and/or by small changes in the frequency or amplitude of the driving force.
摘要翻译： MEM结构可以以参数频率驱动以提供稳定的操作并且通过驱动频率的非常小的变化或结构本身的特性的非常小的变化来允许在稳定和不稳定操作之间的精确切换，从而提供改进的控制和公开了感测。本发明的技术可应用于各种微结构，包括平行板状线性致动器，减速和增强致动器，线性力梳式致动器，特别是具有集成尖端的扭转扫描探头z致动器。这些装置包括用于产生机械运动的电容式致动器或驱动器，更具体地是由制造为交错的固定和可移动电容器指状物的高纵横比MEM梁组成的梳状致动器结构。电容式致动器结构可以用于感测位移或引起运动，固定和可移动的手指的电容板允许宽范围的运动和高幅度而没有故障。这种微机械扭转谐振器遵循Mathieu方程式，并且由合适的驱动力（例如AC驱动器）驱动，以在稳定和不稳定操作之间的急剧转变的谐振频率以外谐振。可以通过设备的物理特性或参数的非常小的变化和/或驱动力的频率或振幅的小的变化来在不稳定和不稳定的操作之间切换设备。

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