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21. 发明授权

US4527044A Apparatus for treating a sample by a pulsed electron beam 失效
标题翻译：用于通过脉冲电子束处理样品的装置
公开(公告)号：US4527044A
公开(公告)日：1985-07-02
申请号：US370386
申请日：1982-04-21
申请人： Michel Bruel , Michel Floccari, deceased , Jean-Francois Michaud
发明人： Michel Bruel , Michel Floccari, deceased , Jean-Francois Michaud
IPC分类号： H01L21/265 , H01J37/24 , H01J37/305 , B23K15/00 , B23K9/00
CPC分类号： H01J37/24 , H01J37/305
摘要： The invention relates to an apparatus for treating samples comprising in a vacuum enclosure a cathode, an actual anode and a grid, as well as means for supplying the sample to the enclosure, a high voltage generator, a capacitor C.sub.1 charged by way of the said generator, a spark gap switch for producing a high energy pulse between the cathode and the grid, said switch being connected to one terminal of said capacitor, an element for producing pulses controlling the spark gap switch and a capacitor C.sub.2 having a capacitance above that of capacitor C.sub.1, charged by way of the generator used for producing between the actual anode and the cathode an electric field for accelerating and extracting electrons used for the bombardment of the sample.
摘要翻译：本发明涉及一种用于处理样品的装置，包括在真空室中阴极，实际阳极和电网，以及用于将样品供应到外壳的装置，高压发生器，通过所述电极充电的电容器C1 发电机，用于在阴极和电网之间产生高能量脉冲的火花隙开关，所述开关连接到所述电容器的一个端子，用于产生控制火花隙开关的脉冲的元件和电容器C2，其电容高于电容器C1通过用于在实际阳极和阴极之间产生的发生器进行充电，用于加速和提取用于轰击样品的电子的电场。

22. 发明授权

US08492877B2 Semiconductor structure with smoothed surface and process for obtaining such a structure 有权
标题翻译：具有平滑表面的半导体结构和用于获得这种结构的工艺
公开(公告)号：US08492877B2
公开(公告)日：2013-07-23
申请号：US13349263
申请日：2012-01-12
申请人： Michel Bruel
发明人： Michel Bruel
IPC分类号： H01L29/30
CPC分类号： H01L21/302 , H01L21/268 , H01L21/3247 , H01L21/76254
摘要： The present invention relates to a process for smoothing the surface of a semiconductor wafer by fusion. The process includes defining a reference length which dimensions wafer surface roughness that is to be reduced or removed, and scanning the surface with a fusion beam while adjusting parameters of the fusion beam so as to fuse, during the scanning of the surface, a local surface zone of the wafer whose length is greater than or equal to the reference length, with the scanning continued to smooth the entire surface of the wafer by eliminating surface roughnesses of period lower than the reference length. The present invention also relates to a semiconductor wafer having a surface layer made of a semiconducting material that is smoothed by the process and that does not exhibit any roughness of period lower than the reference length.
摘要翻译：本发明涉及通过熔化来平滑半导体晶片的表面的工艺。该过程包括定义参考长度，其缩小待削减或去除的晶片表面粗糙度，以及在调整熔合束的参数的同时用熔融光束扫描表面，从而在扫描表面期间熔化局部表面长度大于或等于参考长度的晶片的区域，扫描通过消除低于参考长度的周期的表面粗糙度，继续平滑晶片的整个表面。本发明还涉及一种半导体晶片，其具有由半导体材料制成的表面层，该表面层通过该工艺平滑，并且不显示比参考长度低的周期的粗糙度。

23. 发明授权

US08324530B2 Method for heating a wafer by means of a light flux 有权
标题翻译：通过光通量加热晶片的方法
公开(公告)号：US08324530B2
公开(公告)日：2012-12-04
申请号：US12680880
申请日：2008-09-26
申请人： Michel Bruel
发明人： Michel Bruel
IPC分类号： B23K26/00
CPC分类号： H01L21/268
摘要： A method for heating a wafer that has at least one layer to be heated and a sub-layer. The method includes applying at least one light flux pulse to the wafer for heating the at least one layer in a manner such that the absorption coefficient of the flux by the layer is low as long as the temperature of the layer to be heated is in the low temperature range (PBT) but the absorption coefficient increases significantly when the temperature of the layer enters a high temperature range (PHT). Also, a sub-layer is selected such that the absorption coefficient of the applied light flux at the selected wavelength is high in the low temperature range (PBT) and the temperature enters the high temperature range (PHT) when the sub-layer is subjected to the light flux. The application of the light flux achieves improved heating of the wafer.
摘要翻译：一种用于加热具有至少一层待加热层和子层的晶片的方法。该方法包括将至少一个光通量脉冲施加到晶片上以加热至少一层，使得该层的焊剂的吸收系数低，只要被加热层的温度在低温范围（PBT），但当层的温度进入高温范围（PHT）时吸收系数显着增加。此外，选择子层，使得在低温范围（PBT）中所选波长的被施加光束的吸收系数高，并且当子层受到时，温度进入高温范围（PHT）到光通量。光通量的应用实现了晶片的加热。

24. 发明申请

US20110092051A1 PROCESS FOR THE TRANSFER OF A THIN FILM COMPRISING AN INCLUSION CREATION STEP 有权
标题翻译：包含包含创建步骤的薄膜转移过程
公开(公告)号：US20110092051A1
公开(公告)日：2011-04-21
申请号：US12977757
申请日：2010-12-23
申请人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
发明人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
IPC分类号： H01L21/302 , H01L21/306 , H01L21/31
CPC分类号： H01L21/76254 , H01L21/26506 , Y10S438/977
摘要： A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.
摘要翻译：用于转移薄膜的方法包括形成夹杂物层以产生气态化合物的捕集阱。夹杂物可以是一个或多个植入区域的形式，其作为被配置成捕获植入物种的限制层。此外，夹杂物可以是通过化学气相沉积，外延生长，离子溅射或由任何上述方法形成的应力区域或层沉积的一个或多个层的形式。夹杂物也可以是通过初始载体的热处理或通过任何上述方法形成的层的热处理形成的区域，或者通过蚀刻层中的空腔而形成的区域。在随后的步骤中，将气体化合物引入到夹杂物层中以形成形成断裂平面的微空腔，通过该断裂平面可以将薄膜与基底的其余部分分离。

25. 发明授权

US07846816B2 Method for producing a multilayer structure comprising a separating layer 有权
标题翻译：包括分离层的多层结构体的制造方法
公开(公告)号：US07846816B2
公开(公告)日：2010-12-07
申请号：US11628185
申请日：2005-05-20
申请人： Michel Bruel
发明人： Michel Bruel
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： Process for producing a multilayer structure that includes, within the depth thereof, a separating layer, including: producing an initial multilayer structure comprising a base substrate, a surface substrate and, between the base substrate and the surface substrate, an absorbent layer that can absorb a light power flux in at least one zone and a liquefiable intermediate layer that includes, in at least one zone, impurities having a coefficient of segregation relative to the material constituting this intermediate layer of less than unity; and in subjecting, for a defined time and in the form of at least one pulse, said initial structure to said light power flux, this flux being regulated so as to liquefy at least one portion of said intermediate layer under the effect of the propagation of the thermal energy, in such a way that it results, thanks to the initial presence of said impurities, in a modification of at least one characteristic and/or of at least one property of said intermediate layer arising from the at least partial solidification of said intermediate layer, such that this intermediate layer at least partially constitutes a separating layer.
摘要翻译：一种多层结构体的制造方法，其特征在于，在其深度包括分离层，其包括：制备初始多层结构体，其包括基底基材，表面基材，以及在所述基底基材和所述表面基材之间，可吸收的吸收层在至少一个区域中的光功率通量和可液化中间层，其在至少一个区域中包括相对于构成该中间层的材料具有小于1的偏析系数的杂质; 并且在所述光功率通量对所述初始结构进行规定的时间和形式的至少一个脉冲的情况下，所述通量被调节以在所述中间层的传播的作用下使所述中间层的至少一部分液化由于所述杂质的初始存在，所述热能以至少一种特性和/或由所述中间层的至少一种性质的至少一种性质的修饰形成，所述性质由所述中间层，使得该中间层至少部分地构成分离层。

26. 发明授权

US07435614B2 Method for treating a structure to obtain an internal space and structure having an internal space 有权
标题翻译：用于处理结构以获得具有内部空间的内部空间和结构的方法
公开(公告)号：US07435614B2
公开(公告)日：2008-10-14
申请号：US10539638
申请日：2003-12-04
申请人： Michel Bruel
发明人： Michel Bruel
IPC分类号： H01L21/00 , G01F1/692
CPC分类号： B81C1/00047 , B81C2201/019 , C08F210/16 , C08F4/65916 , C08F210/14 , C08F2500/12 , C08F2500/04
摘要： A method for treating a structure, includes: providing an initial structure having at least one main part and a secondary part which have a contact interface with each other and elements constituting at least one zone to be treated capable of varying in thickness substantially perpendicularly to the interface under the effect of a treatment of its material; and applying the treatment to the zone of the initial structure so as to obtain a final structure such that the variation in the thickness of the zone forms an internal space extending between the parts over at least one zone of the interface and substantially parallel to the interface or within at least one of the parts, spaced apart and substantially parallel to the interface. The invention also concerns the structure with internal space resulting from the displacement of one part relative to another part of the structure.
摘要翻译：一种用于处理结构的方法，包括：提供具有至少一个主要部分和次要部分的初始结构，所述主要部分和次要部分彼此具有接触界面，并且构成至少一个待处理区域的元件的厚度基本上垂直于界面处理其材料的作用; 以及将处理施加到初始结构的区域，以便获得最终结构，使得区域的厚度的变化在界面的至少一个区域之间形成在部件之间延伸的基本平行于界面的内部空间或者在至少一个部件中，间隔开并且基本上平行于界面。本发明还涉及由一部分相对于结构的另一部分的位移而产生的内部空间的结构。

27. 发明申请

US20070232025A1 PROCESS FOR THE TRANSFER OF A THIN FILM 有权
标题翻译：转印薄膜的方法
公开(公告)号：US20070232025A1
公开(公告)日：2007-10-04
申请号：US11747733
申请日：2007-05-11
申请人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
发明人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
IPC分类号： H01L21/46
CPC分类号： H01L21/76254 , H01L21/26506 , Y10S438/977
摘要： A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.
摘要翻译：用于转移薄膜的方法包括形成夹杂物层以产生气态化合物的捕集阱。夹杂物可以是一个或多个植入区域的形式，其作为被配置成捕获植入物种的限制层。此外，夹杂物可以是通过化学气相沉积，外延生长，离子溅射或由任何上述方法形成的应力区域或层沉积的一个或多个层的形式。夹杂物也可以是通过初始载体的热处理或通过任何上述方法形成的层的热处理形成的区域，或者通过蚀刻层中的空腔而形成的区域。在随后的步骤中，将气体化合物引入到夹杂物层中以形成形成断裂平面的微空腔，通过该断裂平面可以将薄膜与基底的其余部分分离。

28. 发明申请

US20050258489A9 Thin layer semi-conductor structure comprising a heat distribution layer 有权
标题翻译：薄层半导体结构包括热分布层
公开(公告)号：US20050258489A9
公开(公告)日：2005-11-24
申请号：US10928057
申请日：2004-06-02
申请人： Jean-Pierre Joly , Michel Bruel , Claude Jaussaud
发明人： Jean-Pierre Joly , Michel Bruel , Claude Jaussaud
IPC分类号： H01L21/762 , H01L23/373 , H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L21/76251 , H01L23/3735 , H01L2924/0002 , H01L2924/00
摘要： The invention concerns a thin layer semi-conductor structure including a semi-conductor surface layer (2) separated from a support substrate (1) by an intermediate zone (3), the intermediate zone (3) being a multi-layer electrically insulating the semi-conductor surface layer from the support substrate. The intermediate zone has a considered sufficiently good electrical quality of interface with the semi-conductor surface layer and includes at least one first layer, of satisfactory thermal conductivity to provide a considered as correct operation of the electronic device or devices which are to be elaborated from the semi-conductor surface layer (2), the intermediate zone including additionally a second insulating layer of low dielectric constant, located between the first layer and the support substrate.
摘要翻译：本发明涉及一种薄层半导体结构，其包括通过中间区（3）从支撑衬底（1）分离的半导体表面层（2），所述中间区（3）是多层电绝缘的半导体表面层从支撑基底。中间区域具有与半导体表面层的界面充分良好的电气质量，并且包括至少一个具有令人满意的导热性的第一层，以提供将要被阐述的电子设备或设备的正确操作所述半导体表面层（2），所述中间区域另外包括位于所述第一层和所述支撑衬底之间的低介电常数的第二绝缘层。

29. 发明申请

US20050029594A1 Thin layer semi-conductor structure comprising a heat distribution layer 有权
标题翻译：薄层半导体结构包括热分布层
公开(公告)号：US20050029594A1
公开(公告)日：2005-02-10
申请号：US10928057
申请日：2004-09-02
申请人： Jean-Pierre Joly , Michel Bruel , Claude Jaussaud
发明人： Jean-Pierre Joly , Michel Bruel , Claude Jaussaud
IPC分类号： H01L21/762 , H01L23/373 , H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L21/76251 , H01L23/3735 , H01L2924/0002 , H01L2924/00
摘要： The invention concerns a thin layer semi-conductor structure including a semi-conductor surface layer (2) separated from a support substrate (1) by an intermediate zone (3), the intermediate zone (3) being a multi-layer electrically insulating the semi-conductor surface layer from the support substrate. The intermediate zone has a considered sufficiently good electrical quality of interface with the semi-conductor surface layer and includes at least one first layer, of satisfactory thermal conductivity to provide a considered as correct operation of the electronic device or devices which are to be elaborated from the semi-conductor surface layer (2), the intermediate zone including additionally a second insulating layer of low dielectric constant, located between the first layer and the support substrate.
摘要翻译：本发明涉及一种薄层半导体结构，其包括通过中间区（3）从支撑衬底（1）分离的半导体表面层（2），所述中间区（3）是多层电绝缘的半导体表面层从支撑基底。中间区域具有与半导体表面层的界面充分良好的电气质量，并且包括至少一个具有令人满意的导热性的第一层，以提供将要被阐述的电子设备或设备的正确操作所述半导体表面层（2），所述中间区域另外包括位于所述第一层和所述支撑衬底之间的低介电常数的第二绝缘层。

30. 发明授权

US06809044B1 Method for making a thin film using pressurization 有权
标题翻译：使用加压制造薄膜的方法
公开(公告)号：US06809044B1
公开(公告)日：2004-10-26
申请号：US10018757
申请日：2002-03-20
申请人： Bernard Aspar , Michel Bruel , Hubert Moriceau
发明人： Bernard Aspar , Michel Bruel , Hubert Moriceau
IPC分类号： H01L21425
CPC分类号： H01L21/76251 , H01L21/2007 , Y10S438/977
摘要： The invention relates to a process for making a thin film starting from a substrate (1) of a solid material with a plane face (2) comprising: the implantation of gaseous compounds in the substrate (1) to make a layer of micro-cavities (4) at a depth from the said plane face (2) corresponding to the thickness of the required thin film, the gaseous compounds being implanted under conditions that could weaken the substrate at the layer of micro-cavities, partial or total separation of the thin film from the rest of the substrate (1), this separation comprising a step in which thermal energy is added and pressure is applied to the said plane face (2).
摘要翻译：本发明涉及从具有平面（2）的固体材料的基材（1）开始制造薄膜的方法，该方法包括：将气态化合物注入基材（1）中以形成一个微孔（4）在与所述薄膜的厚度对应的所述平面（2）的深度处，气态化合物在可能削弱微腔层的基底的条件下被注入，部分或全部分离从基板（1）的其余部分的薄膜，该分离包括添加热能并将压力施加到所述平面（2）的步骤。

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