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21. 发明授权

US6069908A N-drive or P-drive VCSEL array 失效
标题翻译： N驱动或P驱动VCSEL阵列
公开(公告)号：US6069908A
公开(公告)日：2000-05-30
申请号：US20724
申请日：1998-02-09
申请人： Albert T. Yuen , Michael R. T. Tan , Chun Lei
发明人： Albert T. Yuen , Michael R. T. Tan , Chun Lei
IPC分类号： H01S5/00 , H01S5/02 , H01S5/042 , H01S5/183 , H01S5/187 , H01S5/42 , H01S3/19
CPC分类号： H01S5/183 , H01S5/423 , H01S5/0208 , H01S5/0422
摘要： A VCSEL that is adapted to the fabrication of an array of VCSELs. A VCSEL array according to the present invention includes first and second VCSELs for generating light of a predetermined wavelength. Each VCSEL includes a bottom reflector comprising an epitaxial layer of a semiconductor of a first conductivity type, a light generation region and a top reflector comprising a semiconductor of a second conductivity type. A bottom electrode is electrically connected to the bottom reflector, and a top electrode is electrically connected to the top reflector. The bottom electrode is grown on top of a buffer layer having an electrical conductivity less than a predetermined value and a crystalline structure that permits epitaxial growth of the bottom reflector on the buffer layer. The buffer layer may be grown on top of a substrate or be the substrate itself in the case in which a substrate having sufficiently low conductivity is utilized. The bottom reflector of each of the VCSELs is in contact with the top of the buffer layer. The first and second VCSELs are electrically isolated from one another by a trench extending into the buffer layer. The buffer layer is constructed from a material having resistivity that is sufficiently low to prevent cross-talk between the first and second VCSELs.
摘要翻译：适用于制造VCSEL阵列的VCSEL。根据本发明的VCSEL阵列包括用于产生预定波长的光的第一和第二VCSEL。每个VCSEL包括底部反射器，其包括第一导电类型的半导体的外延层，发光区域和包括第二导电类型的半导体的顶部反射器。底部电极电连接到底部反射器，并且顶部电极电连接到顶部反射器。底部电极生长在具有小于预定值的电导率的缓冲层的顶部上，并且允许底部反射器在缓冲层上外延生长的晶体结构。在使用具有足够低的导电性的基板的情况下，可以在衬底的顶部生长缓冲层或者作为衬底本身。每个VCSEL的底部反射器与缓冲层的顶部接触。第一和第二VCSEL通过延伸到缓冲层中的沟槽彼此电隔离。缓冲层由具有足够低的电阻率的材料构成，以防止第一和第二VCSEL之间的串扰。

22. 发明授权

US07372886B2 High thermal conductivity vertical cavity surface emitting laser (VCSEL) 有权
标题翻译：高导热性垂直腔表面发射激光器（VCSEL）
公开(公告)号：US07372886B2
公开(公告)日：2008-05-13
申请号：US10862753
申请日：2004-06-07
申请人： Yoon K. Song , Michael H. Leary , Michael R. T. Tan
发明人： Yoon K. Song , Michael H. Leary , Michael R. T. Tan
IPC分类号： H01S5/00 , H01S3/04 , H01S3/08
CPC分类号： H01S5/02461 , H01S5/0425 , H01S5/18308 , H01S5/18327
摘要： A light generating device such as a VCSEL includes a light generation layer, a top reflector, a bottom reflector, and a high thermal conductivity (HTC) layer between the light generation layer and the bottom reflector. The light generation layer is adapted to generate light having a first wavelength. Heat produced at the light generation layer is more efficiently dissipated due to the presence of the HTC layer. Alternatively, a light generating device such as a VCSEL includes a light generation layer, a top reflector, and a high thermal conductivity (HTC) bottom reflector. Heat produced at the light generation layer is more efficiently dissipated due to the fact that the bottom reflector is a HTC DBR reflector having lower thermal resistivity than a conventional DBR reflector.
摘要翻译：诸如VCSEL的发光装置在光产生层和底部反射器之间包括光产生层，顶部反射器，底部反射器和高热导率（HTC）层。光产生层适于产生具有第一波长的光。由于HTC层的存在，在光产生层产生的热更有效地消散。或者，诸如VCSEL的发光装置包括光产生层，顶反射器和高热导率（HTC）底反射器。由于底部反射器是具有比常规DBR反射器低的热电阻率的HTC DBR反射器的事实，在光产生层产生的热量更有效地消散。

23. 发明授权

US07358523B2 Method and structure for deep well structures for long wavelength active regions 失效
标题翻译：长波长活性区深井结构的方法和结构
公开(公告)号：US07358523B2
公开(公告)日：2008-04-15
申请号：US10970528
申请日：2004-10-20
申请人： Michael R. T. Tan , Ashish Tandon , David P. Bour
发明人： Michael R. T. Tan , Ashish Tandon , David P. Bour
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/06 , H01S5/183 , H01S5/3408 , H01S5/34313 , H01S5/34333
摘要： Subwells are added to quantum wells of light emitting semiconductor structures to shift their emission wavelengths to longer wavelengths. Typical applications of the invention are to InGaAs, InGaAsSb, InP and GaN material systems, for example.
摘要翻译：子阱被添加到发光半导体结构的量子阱中，以将其发射波长移动到更长的波长。本发明的典型应用是例如InGaAs，InGaAsSb，InP和GaN材料体系。

24. 发明授权

US06931044B2 Method and apparatus for improving temperature performance for GaAsSb/GaAs devices 有权
标题翻译：用于提高GaAsSb / GaAs器件温度性能的方法和装置
公开(公告)号：US06931044B2
公开(公告)日：2005-08-16
申请号：US10368274
申请日：2003-02-18
申请人： David P. Bour , Michael R. T. Tan , Ying-Lan Chang
发明人： David P. Bour , Michael R. T. Tan , Ying-Lan Chang
IPC分类号： H01S5/20 , H01L33/06 , H01S5/00 , H01S5/183 , H01S5/323 , H01S5/34 , H01S5/343
CPC分类号： H01S5/183 , B82Y20/00 , H01L33/06 , H01S5/3422 , H01S5/34306 , H01S5/34353
摘要： A method and apparatus is provided for improving the temperature performance of GaAsSb materials utilizing an AlGaInP confinement structure. An active region containing a GaAsSb quantum well layer and (In)GaAs barrier layers is sandwiched between two AlGaInP confinement layers. AlGaInP confinement structures provide sufficient electron confinement, thereby improving the stability of the threshold current with respect to increasing temperature for GaAsSb/GaAs heterostructures.
摘要翻译：提供了一种利用AlGaInP约束结构来改善GaAsSb材料的温度性能的方法和装置。包含GaAsSb量子阱层和（In）GaAs势垒层的有源区夹在两个AlGaInP限制层之间。 AlGaInP约束结构提供了足够的电子限制，从而提高了GaAsSb / GaAs异质结构相对于增加温度的阈值电流的稳定性。

25. 发明授权

US06730944B1 InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP 失效
标题翻译：基于InP的高温激光器，具有InAsP量子阱层和Gax（ALIn）1-xP的阻挡层
公开(公告)号：US06730944B1
公开(公告)日：2004-05-04
申请号：US10354276
申请日：2003-01-30
申请人： Ashish Tandon , Ying-Ian Chang , Scott W. Corzine , David P. Bour , Michael R. T. Tan
发明人： Ashish Tandon , Ying-Ian Chang , Scott W. Corzine , David P. Bour , Michael R. T. Tan
IPC分类号： H01L2906
CPC分类号： B82Y20/00 , H01S5/3406 , H01S5/3407 , H01S5/34306 , H01S5/3434 , H01S5/3436 , H01S2302/00
摘要： The invention provides a laser structure that operates at a wavelength of 1.3 &mgr;m and at elevated temperatures and a method of making same. The laser structure includes a quantum well layer of InAsP. The quantum well layer is sandwiched between a first barrier layer and a second barrier layer. Each barrier layer exhibits a higher bandgap energy than the quantum well layer. Also, each barrier layer comprises Gax(AlIn)1−xP in which x 0. This material has a higher bandgap energy than conventional barrier layer materials, such as InGaP. The resulting larger conduction band discontinuity leads to improved high temperature performance without increasing the threshold current of the laser structure.
摘要翻译：本发明提供了在1.3μm波长和高温下工作的激光结构及其制造方法。激光器结构包括InAsP的量子阱层。量子阱层夹在第一阻挡层和第二阻挡层之间。每个阻挡层表现出比量子阱层更高的带隙能量。此外，每个阻挡层包括其中x 0的Gax（AlIn）1-xP。该材料具有比诸如InGaP的常规阻挡层材料更高的带隙能量。所产生的更大的导带不连续性导致改善的高温性能而不增加激光器结构的阈值电流。

26. 发明授权

US08315526B2 Misalignment tolerant free space optical transceiver 有权
标题翻译：不对准自由空间光收发器
公开(公告)号：US08315526B2
公开(公告)日：2012-11-20
申请号：US11820299
申请日：2007-06-18
申请人： Michael R. T. Tan , David A. Fattal , Terrel Morris
发明人： Michael R. T. Tan , David A. Fattal , Terrel Morris
IPC分类号： H04B10/00
CPC分类号： H04B10/803
摘要： In accordance with an aspect of the invention, a system has a transmitter and a receiver, where the transmitter includes a beam source and an optical element. The beam source produces a beam that represents information, and the optical element alters the beam so that the beam has a uniform intensity over a cross-sectional area. The receiver is separated from the transmitter by free space through which the beam propagates and includes an active area positioned to receive a portion of the beam that the receiver converts into a received signal. To accommodate possible misalignment, the cross-sectional area of the beam is larger than the active area by an amount that accommodates a range of misalignment of the receiver with the transmitter.
摘要翻译：根据本发明的一个方面，系统具有发射器和接收器，其中发射器包括光束源和光学元件。光束源产生表示信息的光束，并且光学元件改变光束，使得光束在横截面积上具有均匀的强度。接收机通过自由空间与发射机分离，射束通过该空间传播，并且包括被定位为接收接收机转换成接收信号的波束的一部分的有源区域。为了适应可能的未对准，波束的横截面面积大于有效区域，其量适应接收器与发射器的不对准范围。

27. 发明授权

US07577172B2 Active region of a light emitting device optimized for increased modulation speed operation 有权
标题翻译：针对增加的调制速度操作优化的发光器件的有源区域
公开(公告)号：US07577172B2
公开(公告)日：2009-08-18
申请号：US11143374
申请日：2005-06-01
申请人： Ashish Tandon , Kostadin Djordjev , Chao-Kun Lin , Michael R. T. Tan
发明人： Ashish Tandon , Kostadin Djordjev , Chao-Kun Lin , Michael R. T. Tan
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/3407
摘要： In accordance with the invention, increased maximum modulation speeds and improved hole distribution are obtained for light emitting devices. Barrier layers of a quantum well structure for a light emitting device are formed with varying barrier energy heights. Quantum well layers of the quantum well structure are formed between the barrier layers.
摘要翻译：根据本发明，获得了用于发光器件的增加的最大调制速度和改善的孔分布。用于发光器件的量子阱结构的阻挡层形成具有变化的势垒能量高度。在阻挡层之间形成量子阱结构的量子阱层。

28. 发明申请

US20090129426A1 Semiconductor System Having a Ring Laser Fabricated by Epitaxial Layer Overgrowth 失效
标题翻译：具有由外延层过度生长制成的环形激光器的半导体系统
公开(公告)号：US20090129426A1
公开(公告)日：2009-05-21
申请号：US12359326
申请日：2009-01-25
申请人： Michael R. T. Tan , Scott W. Corzine , David P. Bour
发明人： Michael R. T. Tan , Scott W. Corzine , David P. Bour
IPC分类号： H01S3/083
CPC分类号： B82Y20/00 , H01S5/0424 , H01S5/1071 , H01S5/12 , H01S5/2077 , H01S5/2272 , H01S5/34 , H01S5/3428 , H01S5/34333 , H01S2304/12
摘要： The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.
摘要翻译：本发明提供了一种环形激光系统，其包括通过外延层在中间层上过度生长形成光学核心，形成与光学核心相邻的多量子阱并形成进一步包括全部内部反射器的外部结构，其中在内部形成光子多量子阱还包括在包括外部结构，多量子阱和光学核心的环形激光器结构内循环光子。

29. 发明授权

US07215848B2 Optical isolator utilizing a micro-resonator 失效
标题翻译：光隔离器利用微谐振器
公开(公告)号：US07215848B2
公开(公告)日：2007-05-08
申请号：US10768858
申请日：2004-01-29
申请人： Michael R. T. Tan , William Trutna , David P. Bour , Michael H. Leary
发明人： Michael R. T. Tan , William Trutna , David P. Bour , Michael H. Leary
IPC分类号： G02B6/26
CPC分类号： G02B6/29335 , G02B6/12007 , G02B6/2746 , G02B2006/12097 , G02B2006/12104 , G02F1/0955 , G02F2203/15
摘要： An optical isolator for coupling light from a first waveguide to a second waveguide is disclosed. The optical isolator utilizes a resonator coupled to the first and second optical waveguides. The resonator has a resonance at λ for light traveling from the first optical waveguide to the second optical waveguide; however, the resonator does not have a resonance at λ for light traveling from the second waveguide to the first waveguide. The resonator can use a layer of ferromagnetic material in an applied magnetic field. The magnetic field within the ferromagnetic material varies in strength and/or direction over the layer of ferromagnetic material. The magnetic field can be generated by an external magnetic field that varies over the layer of ferromagnetic material. Alternatively, the resonator can include a layer of ferromagnetic metal that overlies a portion of the layer of ferromagnetic material and a constant external magnetic field.
摘要翻译：公开了一种用于将来自第一波导的光耦合到第二波导的光隔离器。光隔离器利用耦合到第一和第二光波导的谐振器。谐振器对于从第一光波导到第二光波导的光的λ具有谐振; 然而，对于从第二波导传播到第一波导的光，谐振器在λ处不具有谐振。谐振器可以在施加的磁场中使用铁磁材料层。铁磁材料内的磁场在铁磁材料层上的强度和/或方向上变化。磁场可以由在铁磁材料层上变化的外部磁场产生。或者，谐振器可以包括铁磁金属层，其覆盖铁磁材料层的一部分和恒定的外部磁场。

30. 发明授权

US07034331B2 Material systems for semiconductor tunnel-junction structures 失效
标题翻译：半导体隧道结结构材料系统
公开(公告)号：US07034331B2
公开(公告)日：2006-04-25
申请号：US10861144
申请日：2004-06-04
申请人： Ying-Lan Chang , Ashish Tandon , Michael H. Leary , Michael R. T. Tan
发明人： Ying-Lan Chang , Ashish Tandon , Michael H. Leary , Michael R. T. Tan
IPC分类号： H01L29/06
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/18308 , H01S5/18313 , H01S5/3095 , H01S5/32366 , H01S5/34306 , Y10S257/918
摘要： The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.
摘要翻译：隧道结结构包括第一半导体材料的p型隧道结层，第二半导体材料的n型隧道结层和隧道结层之间的隧道结。至少一种半导体材料包括镓（Ga），砷（As）和氮（N）或锑（Sb）。通过形成隧道结结构的隧道结结构，隧道结的电压降明显增加，并且通过形成具有p型隧道结层的材料的价带能量与 n型隧道结层的导带能量。

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