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21. 发明申请

US20060183345A1 ADVANCED LOW DIELECTRIC CONSTANT ORGANOSILICON PLASMA CHEMICAL VAPOR DEPOSITION FILMS 有权
标题翻译：高级低介电常数有机硅等离子体化学气相沉积膜
公开(公告)号：US20060183345A1
公开(公告)日：2006-08-17
申请号：US10906370
申请日：2005-02-16
申请人： Son Nguyen , Sarah Lane , Jia Lee , Kensaku Ida , Darryl Restaino , Takeshi Nogami
发明人： Son Nguyen , Sarah Lane , Jia Lee , Kensaku Ida , Darryl Restaino , Takeshi Nogami
IPC分类号： H01L21/31
CPC分类号： H01L21/7682 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/02348 , H01L21/02351 , H01L21/02354 , H01L21/3122 , H01L21/31633 , H01L2221/1047
摘要： A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter “SiCOH”) in a covalently bonded tri-dimensional network structure having a dielectric constant of less than about 3.0, a higher degree of crystalline bonding interactions, more carbon as methyl termination groups and fewer methylene, —CH2— crosslinking groups than prior art SiCOH dielectrics is provided. The SiCOH dielectric is characterized as having a FTIR spectrum comprising a peak area for CH3+CH2 stretching of less than about 1.40, a peak area for SiH stretching of less than about 0.20, a peak area for SiCH3 bonding of greater than about 2.0, and a peak area for Si—O—Si bonding of greater than about 60%, and a porosity of greater than about 20%.
摘要翻译：在介电常数小于约3.0的共价键合的三维网络结构中，包含Si，C，O和H原子（以下称为“SiCOH”）的多孔低k或超低k电介质膜，结晶度更高键合相互作用，提供比现有技术的SiCOH电介质更多的碳作为甲基端基和较少的亚甲基-CH 2 - 2交联基团。 SiCOH电介质的特征在于具有包含小于约1.40的CH 3 N 2 CH 2拉伸的峰面积的FTIR光谱，SiH拉伸的峰面积小于约0.20，SiCH 3键的峰面积大于约2.0，Si-O-Si键合的峰面积大于约60％，孔隙率大于约20％。

22. 发明授权

US07001850B2 Method of depositing dielectric films 失效
标题翻译：沉积介质膜的方法
公开(公告)号：US07001850B2
公开(公告)日：2006-02-21
申请号：US10894872
申请日：2004-07-20
申请人： Srinivas D Nemani , Li-Qun Xia , Dian Sugiarto , Ellie Yieh , Ping Xu , Francimar Campana-Schmitt , Jia Lee
发明人： Srinivas D Nemani , Li-Qun Xia , Dian Sugiarto , Ellie Yieh , Ping Xu , Francimar Campana-Schmitt , Jia Lee
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/76834 , C23C16/325 , H01L21/0332 , H01L21/3081 , H01L21/31144 , H01L21/314 , H01L21/3148 , H01L21/76801 , H01L21/76802 , H01L21/7681 , H01L21/76826 , H01L21/76829 , Y10S438/931
摘要： A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.
摘要翻译：提供了一种形成用于集成电路制造工艺中的碳化硅层的方法。碳化硅层通过在电场存在下使包含硅源，碳源和掺杂剂的气体混合物反应而形成。沉积的碳化硅层具有随后期形成期间作为气体混合物中存在的掺杂剂量的函数而变化的压缩性。

23. 发明授权

US06764958B1 Method of depositing dielectric films 失效
标题翻译：沉积介质膜的方法
公开(公告)号：US06764958B1
公开(公告)日：2004-07-20
申请号：US09627667
申请日：2000-07-28
申请人： Srinivas D Nemani , Li-Qun Xia , Dian Sugiarto , Ellie Yieh , Ping Xu , Francimar Campana-Schmitt , Jia Lee
发明人： Srinivas D Nemani , Li-Qun Xia , Dian Sugiarto , Ellie Yieh , Ping Xu , Francimar Campana-Schmitt , Jia Lee
IPC分类号： H01L2131
CPC分类号： H01L21/76834 , C23C16/325 , H01L21/0332 , H01L21/3081 , H01L21/31144 , H01L21/314 , H01L21/3148 , H01L21/76801 , H01L21/76802 , H01L21/7681 , H01L21/76826 , H01L21/76829 , Y10S438/931
摘要： A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.
摘要翻译：提供了一种形成用于集成电路制造工艺中的碳化硅层的方法。碳化硅层通过在电场存在下使包含硅源，碳源和掺杂剂的气体混合物反应而形成。沉积的碳化硅层具有随后期形成期间作为气体混合物中存在的掺杂剂量的函数而变化的压缩性。

24. 发明授权

US08129290B2 Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure 有权
标题翻译：使用后PECVD沉积UV固化来增加氮化硅膜的拉伸应力的方法
公开(公告)号：US08129290B2
公开(公告)日：2012-03-06
申请号：US11400275
申请日：2006-04-07
申请人： Mihaela Balseanu , Michael S. Cox , Li-Qun Xia , Mei-Yee Shek , Jia Lee , Vladimir Zubkov , Tzu-Fang Huang , Rongping Wang , Isabelita Roflox , Hichem M'Saad
发明人： Mihaela Balseanu , Michael S. Cox , Li-Qun Xia , Mei-Yee Shek , Jia Lee , Vladimir Zubkov , Tzu-Fang Huang , Rongping Wang , Isabelita Roflox , Hichem M'Saad
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/345 , C23C16/45523 , C23C16/56 , H01L21/3141 , H01L21/3185 , H01L21/823412 , H01L21/82345 , H01L21/823807 , H01L21/823835
摘要： High tensile stress in a deposited layer such as silicon nitride, may be achieved utilizing one or more techniques, employed alone or in combination. High tensile stress may be achieved by forming a silicon-containing layer on a surface by exposing the surface to a silicon-containing precursor gas in the absence of a plasma, forming silicon nitride by exposing said silicon-containing layer to a nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride created thereby. High tensile stress may also be achieved by exposing a surface to a silicon-containing precursor gas in a first nitrogen-containing plasma, treating the material with a second nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride formed thereby. In another embodiment, tensile film stress is enhanced by deposition with porogens that are liberated upon subsequent exposure to UV radiation or plasma treatment.
摘要翻译：沉积层如氮化硅中的高拉伸应力可以利用单独使用或组合使用的一种或多种技术来实现。可以通过在不存在等离子体的情况下将表面暴露于含硅前体气体而在表面上形成含硅层来形成高拉伸应力，通过将含硅层暴露于含氮等离子体而形成氮化硅，然后重复这些步骤以增加由此产生的氮化硅的厚度。也可以通过在第一含氮等离子体中将表面暴露于含硅前体气体，用第二含氮等离子体处理该材料，然后重复这些步骤以增加氮化硅的厚度来实现高拉伸应力由此形成。在另一个实施方案中，拉伸膜应力通过在随后暴露于UV辐射或等离子体处理时释放的孔原子沉积而增强。

25. 发明申请

US20060269693A1 Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure 有权
标题翻译：使用后PECVD沉积UV固化来增加氮化硅膜的拉伸应力的方法
公开(公告)号：US20060269693A1
公开(公告)日：2006-11-30
申请号：US11400275
申请日：2006-04-07
申请人： Mihaela Balseanu , Michael Cox , Li-Qun Xia , Mei-Yee Shek , Jia Lee , Vladimir Zubkov , Tzu-Fang Huang , Rongping Wang , Isabelita Roflox , Hichem M'Saad
发明人： Mihaela Balseanu , Michael Cox , Li-Qun Xia , Mei-Yee Shek , Jia Lee , Vladimir Zubkov , Tzu-Fang Huang , Rongping Wang , Isabelita Roflox , Hichem M'Saad
IPC分类号： H05H1/24 , B05D3/00
CPC分类号： C23C16/345 , C23C16/45523 , C23C16/56 , H01L21/3141 , H01L21/3185 , H01L21/823412 , H01L21/82345 , H01L21/823807 , H01L21/823835
摘要： High tensile stress in a deposited layer such as silicon nitride, may be achieved utilizing one or more techniques, employed alone or in combination. High tensile stress may be achieved by forming a silicon-containing layer on a surface by exposing the surface to a silicon-containing precursor gas in the absence of a plasma, forming silicon nitride by exposing said silicon-containing layer to a nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride created thereby. High tensile stress may also be achieved by exposing a surface to a silicon-containing precursor gas in a first nitrogen-containing plasma, treating the material with a second nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride formed thereby. In another embodiment, tensile film stress is enhanced by deposition with porogens that are liberated upon subsequent exposure to UV radiation or plasma treatment.
摘要翻译：沉积层如氮化硅中的高拉伸应力可以利用单独使用或组合使用的一种或多种技术来实现。可以通过在不存在等离子体的情况下将表面暴露于含硅前体气体而在表面上形成含硅层来形成高拉伸应力，通过将含硅层暴露于含氮等离子体而形成氮化硅，然后重复这些步骤以增加由此产生的氮化硅的厚度。也可以通过在第一含氮等离子体中将表面暴露于含硅前体气体，用第二含氮等离子体处理该材料，然后重复这些步骤以增加氮化硅的厚度来实现高拉伸应力由此形成。在另一个实施方案中，拉伸膜应力通过在随后暴露于UV辐射或等离子体处理时释放的孔原子沉积而增强。

26. 发明授权

US06987402B2 Reversible logic elements operating in a synchronous mode 失效
标题翻译：在同步模式下工作的可逆逻辑元件
公开(公告)号：US06987402B2
公开(公告)日：2006-01-17
申请号：US10812419
申请日：2004-03-30
申请人： Jia Lee , Peper Ferdinand , Susumu Adachi
发明人： Jia Lee , Peper Ferdinand , Susumu Adachi
IPC分类号： H03K19/20
CPC分类号： H03K19/1736
摘要： A new reversible element with six lines (three input lines and three output lines) and two states are proposed. This element is computationally universal in the sense that a universal Turing machine can be constructed from it. Two reversible elements, each of which has two input lines, two output lines, and two states. These two elements are related to each other in the sense that their functionalities are each other's inverse, so, one of the elements can be obtained from the other by reversing the operations conducted by the other, and interpreting the other's input lines as output lines and the other's output lines as input lines. Together these two elements form a computationally universal set, i.e., a universal Turing machine can be constructed from them.
摘要翻译：提出了一种具有六条线（三条输入线和三条输出线）和两条状态的新型可逆元件。这个元素在计算上是普遍的，在这个意义上，通用图灵机可以从它构建。两个可逆元件，每个都有两条输入线，两条输出线和两条状态。这两个元素在它们的功能彼此相反的意义上彼此相关，因此，通过反转另一个的操作可以从另一个元素中获得另一个元素，并将另一个输入行解释为输出行，并且其他输出线作为输入线。这两个要素组合在一起形成一个计算上通用的组合，即可以从它们构造通用图灵机。

27. 发明申请

US20050020048A1 Method of depositing dielectric films 失效
标题翻译：沉积介质膜的方法
公开(公告)号：US20050020048A1
公开(公告)日：2005-01-27
申请号：US10894872
申请日：2004-07-20
申请人： Srinivas Nemani , Li-Qun Xia , Dian Sugiarto , Ellie Yieh , Ping Xu , Francimar Campana-Schmitt , Jia Lee
发明人： Srinivas Nemani , Li-Qun Xia , Dian Sugiarto , Ellie Yieh , Ping Xu , Francimar Campana-Schmitt , Jia Lee
IPC分类号： C23C16/42 , C23C16/32 , H01L21/20 , H01L21/314 , H01L21/768 , H01L23/522 , H01L21/331
CPC分类号： H01L21/76834 , C23C16/325 , H01L21/0332 , H01L21/3081 , H01L21/31144 , H01L21/314 , H01L21/3148 , H01L21/76801 , H01L21/76802 , H01L21/7681 , H01L21/76826 , H01L21/76829 , Y10S438/931
摘要： A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.
摘要翻译：提供了一种形成用于集成电路制造工艺中的碳化硅层的方法。碳化硅层通过在电场存在下使包含硅源，碳源和掺杂剂的气体混合物反应而形成。沉积的碳化硅层具有随后期形成期间作为气体混合物中存在的掺杂剂量的函数而变化的压缩性。

28. 发明授权

US06777171B2 Fluorine-containing layers for damascene structures 失效
标题翻译：用于镶嵌结构的含氟层
公开(公告)号：US06777171B2
公开(公告)日：2004-08-17
申请号：US09839869
申请日：2001-04-20
申请人： Ping Xu , Jia Lee , Ishing Lou , Li-Qun Xia
发明人： Ping Xu , Jia Lee , Ishing Lou , Li-Qun Xia
IPC分类号： H01L2131
CPC分类号： H01L21/76834 , C23C16/30 , C23C16/325 , C23C16/345 , H01L21/02126 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/3127 , H01L21/314 , H01L21/3146 , H01L21/31633 , H01L21/3185 , H01L21/76802 , H01L21/76813 , H01L21/76826 , H01L21/76829
摘要： A method of forming a silicon carbide layer, a silicon nitride layer, an organosilicate layer is disclosed. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a fluorine source in the presence of an electric field. The silicon nitride layer is formed by reacting a gas mixture comprising a silicon source, a nitrogen source, and a fluorine source in the presence of an electric field. The organosilicate layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, an oxygen source and a fluorine source in the presence of an electric field. The silicon carbide layer, the silicon nitride layer and the organosilicate layer are all compatible with integrated circuit fabrication processes.
摘要翻译：公开了一种形成碳化硅层，氮化硅层，有机硅酸盐层的方法。在存在电场的情况下使包含硅源，碳源和氟源的气体混合物反应形成碳化硅层。氮化硅层通过在电场存在下使包含硅源，氮源和氟源的气体混合物反应而形成。有机硅酸盐层通过在电场存在下使包含硅源，碳源，氧源和氟源的气体混合物反应而形成。碳化硅层，氮化硅层和有机硅酸盐层都与集成电路制造工艺兼容。

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