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21. 发明授权

US06471770B2 Method of manufacturing semiconductor substrate 失效
标题翻译：制造半导体衬底的方法
公开(公告)号：US06471770B2
公开(公告)日：2002-10-29
申请号：US09748234
申请日：2000-12-27
申请人： Masayoshi Koike , Seiji Nagai
发明人： Masayoshi Koike , Seiji Nagai
IPC分类号： C30B2522
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/02458 , H01L21/02472 , H01L21/02491 , H01L21/02505 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/0079 , H01S5/0202 , H01S5/0213 , H01S5/32341
摘要： A thick GaN layer is grown on sapphire through an Au layer at a temperature lower than the melting point of 1064° C. of the Au layer, and temperature of a sample is raised to reach and exceed the melting point of the Au layer so that the Au layer is dissolved. In this state, the sapphire and GaN layer are separated from each other.
摘要翻译：在低于Au层的1064℃的熔点的温度下，通过Au层在蓝宝石上生长厚的GaN层，使样品的温度升高到超过Au层的熔点，使得 Au层溶解。在这种状态下，蓝宝石和GaN层彼此分离。

22. 发明授权

US06326236B1 Semiconductor light-emitting device and manufacturing method thereof 有权
公开(公告)号：US06326236B1
公开(公告)日：2001-12-04
申请号：US09497814
申请日：2000-02-03
申请人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
发明人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
IPC分类号： H01L2144
CPC分类号： H01L33/32 , B82Y20/00 , H01L29/155 , H01L33/06 , Y10S438/933
摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1−Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1−Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

23. 发明授权

US09263258B2 Method for producing group III nitride-based compound semiconductor, wafer, and group III nitride-based compound semiconductor device 有权
标题翻译：制备III族氮化物类化合物半导体，晶片和III族氮化物类化合物半导体器件的方法
公开(公告)号：US09263258B2
公开(公告)日：2016-02-16
申请号：US12320642
申请日：2009-01-30
申请人： Seiji Nagai , Shiro Yamazaki , Takayuki Sato , Yasuhide Yakushi , Koji Okuno , Koichi Goshonoo
发明人： Seiji Nagai , Shiro Yamazaki , Takayuki Sato , Yasuhide Yakushi , Koji Okuno , Koichi Goshonoo
IPC分类号： C30B25/04 , B32B19/04 , H01L21/02 , C30B25/18 , C30B29/40
CPC分类号： H01L21/0254 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02609 , H01L21/02639
摘要： Provided is a method for producing a Group III nitride-based compound semiconductor having an M-plane main surface. The method employs a sapphire substrate having a main surface which is inclined by 30° with respect to R-plane about a line of intersection Lsapph-AM formed by R-plane and A-plane perpendicular thereto. R-plane surfaces of the sapphire substrate are exposed, and a silicon dioxide mask is formed on the main surface of the substrate. AlN buffer layers are formed on the exposed R-plane surfaces. A GaN layer is formed on the AlN buffer layers. At an initial stage of GaN growth, the top surface of the sapphire substrate is entirely covered with the GaN layer through lateral growth. The GaN layer is grown so that the a-axis of the layer is perpendicular to the exposed R-plane surfaces of the sapphire substrate; the c-axis of the layer is parallel to the axis direction Lsapph-AM of the sapphire substrate; and the m-axis of the layer, which is inclined by 30° from the a-axis thereof, is perpendicular to the main surface (inclined by 30° from the exposed R-plane surfaces) of the sapphire substrate.
摘要翻译：提供一种具有M面主面的III族氮化物系化合物半导体的制造方法。该方法采用蓝色蓝宝石衬底，该蓝宝石衬底具有主表面，其相对于R平面围绕由R平面和与其垂直的A平面形成的交线Lsapph-AM倾斜30°。暴露蓝宝石衬底的R平面表面，并且在衬底的主表面上形成二氧化硅掩模。 AlN缓冲层形成在暴露的R平面上。在AlN缓冲层上形成GaN层。在GaN生长的初始阶段，蓝宝石衬底的顶表面通过横向生长完全被GaN层覆盖。生长GaN层使得该层的a轴垂直于蓝宝石衬底的暴露的R平面表面; 层的c轴平行于蓝宝石衬底的轴方向Lsapph-AM; 并且从其a轴倾斜30°的层的m轴垂直于蓝宝石衬底的主表面（从露出的R平面倾斜30°）。

24. 发明申请

US20150231579A1 PLANETARY MIXER 有权
标题翻译：商业混合器
公开(公告)号：US20150231579A1
公开(公告)日：2015-08-20
申请号：US14349493
申请日：2012-05-28
申请人： Masakazu Inoue , Seiji Nagai , Tomoharu Kawahara
发明人： Masakazu Inoue , Seiji Nagai , Tomoharu Kawahara
IPC分类号： B01F7/30 , B01F3/12 , B01F7/00
CPC分类号： B01F7/30 , A47J43/0711 , B01F3/1271 , B01F7/003 , B01F7/00991 , B01F7/161 , B01F7/32 , B01F2215/0036 , B01F2215/0422
摘要： A planetary mixer which is used for production steps of various products in chemistry, medical treatment, electronics, ceramics, medicines, foods, feed and the like, and in which flame-shaped stirring blades are allowed to perform planetary motion in a tank, by which solid/liquid type treatment materials are subjected to stirring, blending, mixing/kneading, kneading or the like and it is intended to prevent adhesion of materials to a vertical side portion of the flame-shaped stirring blades.The vertical side portion 22 of the frame-shaped stirring blades 20 is constituted to have a cross-sectional configuration which has two slope faces 25, 26 slanting toward an inner wall of the tank, an edge face 29 connecting outward front ends 28 of the slope faces, and an arcuate inner face 30 connecting inward front ends 27 of the slope faces. The inward front ends are located far apart from the inner wall of the tank and the outward front ends are located near the inner wall of the tank, in which the distance between the inward front ends is broad and the distance between the outward front ends is narrow. Since the inner face 30 of the vertical side portion is formed into an arcuate configuration, the materials can flow without backwater, and adhesion and fixing thereof can be prevented.
摘要翻译：用于化学，医疗，电子，陶瓷，药品，食品，饲料等各种产品的生产步骤的行星式混合器，其中允许火焰状搅拌叶片在罐中进行行星运动，其中通过混合/混炼，捏合等进行搅拌，混合，混炼，混炼等，这是为了防止材料与火焰状搅拌叶片的垂直侧部分的附着。框状搅拌叶片20的垂直侧部22构成为具有朝向罐的内壁倾斜的两个倾斜面25,26的截面形状，连接外部前端28的边缘面29 以及连接斜面的内侧前端部27的弓形内面30。内侧前端位于与罐内壁相距较远的位置，向外的前端位于水箱内壁附近，内侧前端之间的距离较宽，其前端之间的距离为狭窄。由于垂直侧部分的内表面30形成为弓形结构，所以材料可以流动而没有回水，并且可以防止其粘附和固定。

25. 发明授权

US06284045B1 Apparatus for building unburned refractory 失效
$Apparatus for building unburned refractory$
标题翻译：用于建筑未燃耐火材料的装置
公开(公告)号：US06284045B1
公开(公告)日：2001-09-04
申请号：US09355132
申请日：1999-07-23
申请人： Ryosuke Nakamura , Toshihiko Kaneshige , Seiji Nagai , Keizo Nishimura
发明人： Ryosuke Nakamura , Toshihiko Kaneshige , Seiji Nagai , Keizo Nishimura
IPC分类号： B05B1306
CPC分类号： B22D41/02
摘要： A monolithic refractory depositing system capable of improving working environment and working efficiency and of spraying a material in a uniform thickness is provided. The monolithic refractory depositing system is capable of carrying out both a spraying process and a casting process. The monolithic refractory depositing system comprises a carriage (4) placed on rails (2) laid near a molten metal container (ladle) (1) so as to travel along the rails (2), a truck (7) capable of moving in directions perpendicular to the moving directions of the carriage (4), a post (8) set up on the traverse truck (7), an elevating frame (10) mounted for vertical movement on the traverse truck (7), a material feed pipe (9) inserted in an upper part of the elevating frame (10) and a spray nozzle (27) (or a pouring pipe (39)) detachably connected to a lower end of the material feed pipe (9), and a bendable support means (20) capable of moving together with the elevating frame (10) and connected to a part of the material feed pipe (9) on an upper side of the elevating frame (10).
摘要翻译：提供了能够改善工作环境和工作效率以及均匀厚度喷涂材料的整体耐火材料沉积系统。整体耐火材料沉积系统能够进行喷涂工艺和铸造工艺。整体耐火材料沉积系统包括一个放置在靠近熔融金属容器（钢包）（1））的轨道（2）上以沿轨道（2）行进的滑架（4），能够沿着方向移动的卡车垂直于滑架（4）的移动方向，设置在横动叉车（7）上的立柱（8），安装在横动车（7）上垂直运动的升降架（10），料料供给管 9）插入升降架（10）的上部和可拆卸地连接到供料管（9）的下端的喷嘴（27）（或浇注管（39）），以及可弯曲的支撑装置（20），其能够与所述升降框架（10）一起移动并且连接到所述升降框架（10）的上侧上的所述供料管道（9）的一部分。

26. 发明授权

US09346027B2 Planetary mixer 有权
标题翻译：行星式搅拌机
公开(公告)号：US09346027B2
公开(公告)日：2016-05-24
申请号：US14349493
申请日：2012-05-28
申请人： Masakazu Inoue , Seiji Nagai , Tomoharu Kawahara
发明人： Masakazu Inoue , Seiji Nagai , Tomoharu Kawahara
IPC分类号： B01F7/00 , B01F7/30 , B01F3/12 , A47J43/07
CPC分类号： B01F7/30 , A47J43/0711 , B01F3/1271 , B01F7/003 , B01F7/00991 , B01F7/161 , B01F7/32 , B01F2215/0036 , B01F2215/0422
摘要： A planetary mixer has stirring blades that undergo planetary motion within a tank in close proximity to an inner wall of the tank for stirring solid/liquid type treatment materials received by the tank. Each of the stirring blades includes a vertical side portion having two slope faces slanting toward the inner wall of the tank, an edge face connecting outward front ends of the slope faces, and an inner face connecting inward front ends of the slope faces. The outward front ends are disposed closer to the tank inner wall than are the inward front ends, with a distance between the inward front ends being greater than a distance between the outward front ends. The inner face is formed in the shape of an arc having a center located at an intersection of a line interconnecting the inward front ends and centerline running through a center of the edge face.
摘要翻译：行星式混合器具有搅拌叶片，该搅拌叶片在罐内靠近罐的内壁进行行星运动，用于搅拌由罐容纳的固/液型处理材料。每个搅拌叶片包括具有朝向罐的内壁倾斜的两个倾斜面的垂直侧部分，连接斜面的外部前端的边缘面和连接斜面的内部前端的内表面。向前的前端设置成比内侧前端更靠近罐内壁，内侧前端之间的距离大于前侧前端之间的距离。内表面形成为具有中心的中心的中心的中心位置，该中心位于将内侧前端与穿过边缘面的中心延伸的中心线相互连接的线的交点处。

27. 发明申请

US20100247418A1 Method for producing group III nitride semiconductor 有权
标题翻译： III族氮化物半导体的制造方法
公开(公告)号：US20100247418A1
公开(公告)日：2010-09-30
申请号：US12662006
申请日：2010-03-26
申请人： Takayuki Sato , Seiji Nagai , Makoto Iwai , Shuhei Higashihara , Yusuke Mori , Yasuo Kitaoka
发明人： Takayuki Sato , Seiji Nagai , Makoto Iwai , Shuhei Higashihara , Yusuke Mori , Yasuo Kitaoka
IPC分类号： C01B21/06
CPC分类号： C30B9/12 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02625
摘要： An object of the present invention is to effectively add Ge in the production of GaN through the Na flux method. In a crucible, a seed crystal substrate is placed such that one end of the substrate remains on the support base, whereby the seed crystal substrate remains tilted with respect to the bottom surface of the crucible, and gallium solid and germanium solid are placed in the space between the seed crystal substrate and the bottom surface of the crucible. Then, sodium solid is placed on the seed crystal substrate. Through employment of this arrangement, when a GaN crystal is grown on the seed crystal substrate through the Na flux method, germanium is dissolved in molten gallium before formation of a sodium-germanium alloy. Thus, the GaN crystal can be effectively doped with Ge.
摘要翻译：本发明的目的是通过Na通量法有效地添加Ge生产GaN。在坩埚中，放置晶种衬底，使得衬底的一端保留在支撑基底上，由此籽晶衬底相对于坩埚的底表面保持倾斜，并且将镓固体和锗固体放置在晶种基板与坩埚底面之间的空间。然后，将钠固体置于晶种衬底上。通过使用这种布置，当GaN晶体通过Na通量法在籽晶衬底上生长时，锗在形成钠 - 锗合金之前溶解在熔融镓中。因此，GaN晶体可以有效地掺杂Ge。

28. 发明申请

US20090294909A1 N-type group III nitride-based compound semiconductor and production method therefor 有权
标题翻译： N型III族氮化物系化合物半导体及其制造方法
公开(公告)号：US20090294909A1
公开(公告)日：2009-12-03
申请号：US12453743
申请日：2009-05-20
申请人： Seiji Nagai , Shiro Yamazaki , Yasuhide Yakushi , Takayuki Sato , Makoto Iwai , Katsuhiro Imai , Yusuke Mori , Yasuo Kitaoka
发明人： Seiji Nagai , Shiro Yamazaki , Yasuhide Yakushi , Takayuki Sato , Makoto Iwai , Katsuhiro Imai , Yusuke Mori , Yasuo Kitaoka
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： C30B9/12 , C30B9/10 , C30B29/403
摘要： An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal.The mole percentage of germanium to gallium in the melt is 0.05 mol % to 0.5 mol %, and the mole percentage of carbon to sodium is 0.1 mol % to 3.0 mol %.
摘要翻译：本发明的目的是通过磁通处理来实现具有高浓度电子的高质量n型半导体晶体的生产。本发明的用于通过助熔剂制造n型III族氮化物基化合物半导体的方法，该方法包括通过使用助熔剂熔化至少III族元素来制备熔体; 向熔体供给含氮气体; 以及从所述熔体在籽晶上生长n型III族氮化物基化合物半导体晶体。在该方法中，将碳和锗溶解在熔体中，并将锗作为供体掺入到半导体晶体中，从而制备n型半导体晶体。熔体中锗与镓的摩尔比为0.05摩尔％〜0.5摩尔％，碳与钠的摩尔比为0.1摩尔％〜3.0摩尔％。

29. 发明授权

US06964705B2 Method for producing semiconductor crystal 失效
标题翻译：半导体晶体的制造方法
公开(公告)号：US06964705B2
公开(公告)日：2005-11-15
申请号：US10620970
申请日：2003-07-17
申请人： Seiji Nagai , Akira Kojima , Kazuyoshi Tomita
发明人： Seiji Nagai , Akira Kojima , Kazuyoshi Tomita
IPC分类号： C30B29/40 , C30B25/02 , C30B25/18 , H01L21/20 , H01L21/205 , H01L21/324 , H01L33/12 , H01L33/32 , C30B25/12 , C30B25/14
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265
摘要： A seed layer as a laminate of a GaN layer (second seed layer) and an AlN buffer layer (first seed layer) is formed on a sapphire substrate. A front surface thereof is etched in the form of stripes with a stripe width (seed width) of about 5 μm, a wing width of about 15 μm and a depth of about 0.5 μm. As a result, mesa portions each shaped like nearly a rectangle in sectional view are formed. Non-etched portions each having the seed multilayer as its flat top portion are arranged at arrangement intervals of L≈20 μm. Part of the sapphire substrate is exposed in trough portions of wings. The ratio S/W of the seed width to the wing width is preferably selected to be in a range of from about ⅓ to about ⅕. Then, a semiconductor crystal A is grown to obtain a thickness of not smaller than 50 μm. The semiconductor crystal is separated from the starting substrate to thereby obtain a high-quality single crystal independent of the starting substrate. When a halide vapor phase epitaxy method is used in the condition that the V/III ratio is selected to be in a range of from 30 to 80, both inclusively, a semiconductor crystal free from cracks can be obtained.
摘要翻译：在蓝宝石衬底上形成作为GaN层（第二种子层）和AlN缓冲层（第一种子层）的叠层的种子层。其前表面以条纹宽度（种子宽度）约5μm，翼宽度约15μm，深度约0.5μm的条纹形式蚀刻。结果，形成了截面图中形状为大致矩形的台面部。每个具有种子多层作为其平坦顶部的非蚀刻部分以L≈20μm的排列间隔布置。蓝宝石衬底的一部分暴露在机翼的槽部分。种子宽度与机翼宽度的比率S / W优选选择在约1/3至约1/5的范围内。然后，生长半导体晶体A以获得不小于50μm的厚度。半导体晶体与起始衬底分离，从而获得独立于起始衬底的高质量单晶。在V / III比选择在30〜80的范围内的情况下使用卤化物气相外延法的情况下，均可以获得不含裂纹的半导体结晶。

30. 发明授权

US5805790A Fault recovery method and apparatus 失效
标题翻译：故障恢复方法及装置
公开(公告)号：US5805790A
公开(公告)日：1998-09-08
申请号：US620846
申请日：1996-03-20
申请人： Tadashi Nota , Masaichiro Yoshioka , Seiji Nagai , Shunji Tanaka , Toshiyuki Kinoshita
发明人： Tadashi Nota , Masaichiro Yoshioka , Seiji Nagai , Shunji Tanaka , Toshiyuki Kinoshita
IPC分类号： G06F15/16 , G06F9/46 , G06F11/00 , G06F11/14 , G06F11/20 , G06F11/22 , G06F11/30 , G06F15/177 , G06F11/34
CPC分类号： G06F11/2043 , G06F11/1402 , G06F11/203 , G06F11/2035 , G06F11/22 , G06F2201/815
摘要： In a fault recovery method for a multi-processor system including a main storage and a plurality of virtual machines which are assigned to a plurality of processors under control of a host operating system and a plurality of guest operating systems and which operate on the processors associated therewith, a fault occurring in one of the processors is detected to recover functions of the system. The method includes the steps of setting recovery attributes for failure to each of the virtual machines, assigning a plurality of virtual machines to a plurality of processors and operating the virtual machines on the processors respectively associated therewith, storing, at detection of occurrence of a fault in one of the processors, data and status information of virtual machines assigned to the processor and status information of the processor respectively in a virtual machine save area and a real machine save area of the main storage, storing fault information of the processor in the main storage by a fault recovery circuit having received a report of the fault, restarting an interrupted process and causing an interruption according to the status information of the virtual machines and the status information and fault information of the processor which are obtained from the main storage, and retrieving, when the interruption is received, one of the virtual machines assigned to the processor according to the processor status information in the real machine save area and then assigning the plural virtual machines to the plural processors for operation thereof according to the recovery attributes for failure set to the retrieved virtual machine.
摘要翻译：在用于多处理器系统的故障恢复方法中，所述多处理器系统包括在主机操作系统和多个客户机操作系统的控制下被分配给多个处理器的主存储器和多个虚拟机，并且在处理器相关联检测到在一个处理器中发生的故障，以恢复系统的功能。该方法包括以下步骤：为每个虚拟机设置故障的恢复属性，将多个虚拟机分配给多个处理器并在分别与其相关联的处理器上操作虚拟机，并在检测出故障时存储分配给处理器的虚拟机的数据和状态信息分别在虚拟机保存区域和主存储器的实际机器保存区域中分别存储在处理器中的数据和状态信息以及处理器的故障信息存储在主存储器中由故障恢复电路接收到故障报告的存储，根据虚拟机的状态信息和从主存储器获得的处理器的状态信息和故障信息，重新启动中断处理并导致中断，以及当接收到中断时，检索分配给该虚拟机的虚拟机之一处理器，根据实际机器保存区域中的处理器状态信息，然后根据为检索到的虚拟机设置的故障的恢复属性将多个虚拟机分配给多个处理器以进行操作。

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