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21. 发明授权

US06916735B2 Method for forming aerial metallic wiring on semiconductor substrate 失效
标题翻译：在半导体基板上形成空中金属布线的方法
公开(公告)号：US06916735B2
公开(公告)日：2005-07-12
申请号：US10259501
申请日：2002-09-30
申请人： Takao Fujikawa , Tetsuya Yoshikawa
发明人： Takao Fujikawa , Tetsuya Yoshikawa
IPC分类号： H01L23/522 , H01L21/3205 , H01L21/768 , H01L21/4763 , H01L21/76
CPC分类号： H01L21/76882 , H01L21/7682
摘要： A temporary support layer 2 is formed on a semiconductor substrate 1, and the temporary support layer 2 is provided with a hole 4 that reaches the semiconductor substrate 1. The hole 4 is filled in with a conductor material 5, and by pressurizing the conductor material 5, the conductor material 5 and the semiconductor substrate 1 are pressure-bonded. Thereby, an aerial wiring structure whose bonding strength is improved and that has excellent self-sustainability can be obtained.
摘要翻译：在半导体衬底1上形成临时支撑层2，并且临时支撑层2设置有到达半导体衬底1的孔4.孔4填充有导体材料5，并且通过对导体材料如图5所示，导体材料5和半导体基板1被压接。由此，可以获得接合强度提高并且具有优异的自持续性的空中布线结构。

22. 发明授权

US06447600B1 Method of removing defects of single crystal material and single crystal material from which defects are removed by the method 有权
标题翻译：通过该方法去除缺陷的单晶材料和单晶材料的缺陷的去除方法
公开(公告)号：US06447600B1
公开(公告)日：2002-09-10
申请号：US09806550
申请日：2001-03-30
申请人： Jun Furukawa , Mitsuru Sudou , Tetsuya Nakai , Takao Fujikawa , Takuya Masui
发明人： Jun Furukawa , Mitsuru Sudou , Tetsuya Nakai , Takao Fujikawa , Takuya Masui
IPC分类号： C30B2502
CPC分类号： C30B29/06 , C30B29/40 , C30B29/42 , C30B29/48 , C30B33/00 , C30B33/02 , H01L21/3225 , H01L21/3228 , H01L21/324 , H01L21/3245
摘要： A hot isostatic pressing treatment is conducted for a single crystal body (11) in an atmosphere where the single crystal body (11) is stable, under a pressure of 0.2 to 304 MPa at a temperature which is 0.85 or more times the melting point in an absolute temperature unit of the single crystal body (11), for 5 minutes to 20 hours; and the single crystal body (11) is annealed. It is preferable that the atmosphere where the single crystal body (11) is stable is an inert gas atmosphere or an atmosphere containing vapor of a high vapor pressure element, and it is more preferable that the HIP treatment is conducted under a pressure of 10 to 200 MPa. Further, the single crystal body (11) may be an ingot of a silicon single crystal, a GaAs single crystal, an InP single crystal, a ZnS single crystal or a ZnSe single crystal, or a block or wafer obtained by slicing the ingot. In this way, there are expelled or dispersed those lattice defects such as vacancy type grown-in defects existing not only at the surface but also at the interior of the single crystal body (11), irrespectively of the size of the single crystal body (11).
摘要翻译：在单晶体（11）稳定的气氛中，在0.2〜304MPa的压力下，在0.85以上的熔点的温度下，对单晶体（11）进行热等静压处理单晶体（11）的绝对温度单位为5分钟〜20小时; 和单晶体（11）进行退火。优选单晶体（11）稳定的气氛是惰性气体气氛或含有高蒸气压元素的蒸汽的气氛，更优选的是，在10〜10的压力下进行HIP处理 200MPa。此外，单晶体（11）可以是硅单晶，GaAs单晶，InP单晶，ZnS单晶或ZnSe单晶的晶锭，或者通过将晶片切片而获得的块或晶片。以这种方式，不仅存在单晶体（11）的表面而且在内部存在空位型生长缺陷的晶格缺陷的排出或分散，而与单晶体的尺寸无关 11）。

23. 发明授权

US06221743B1 Method for processing substrate 失效
标题翻译：基板处理方法
公开(公告)号：US06221743B1
公开(公告)日：2001-04-24
申请号：US09111377
申请日：1998-07-07
申请人： Takao Fujikawa , Yutaka Narukawa , Itaru Masuoka , Kohei Suzuki
发明人： Takao Fujikawa , Yutaka Narukawa , Itaru Masuoka , Kohei Suzuki
IPC分类号： H01L21425
CPC分类号： H01L21/26533 , H01L21/76243
摘要： The present invention provides a method for processing a substrate in which crystal defects occurring according to ion implantation can be prevented from being integrated to form defects such as dislocation or large vacancies in the manufacture of a SIMOX substrate by implanting oxygen atom to a Si base by ion implantation and reacting it with Si to form a buried oxide film. The annealing after ion implantation is performed under a gas atmosphere pressurized to, for example, about 100 MPa. In the pressurized state, a structure having a smaller volume is thermodynamically more stable, and a behavior as increases crystal distortion is arrested in the annealing. Thus, crystal defects can be laid in uniformly dispersed state, vacancies can be also extinguished, and a Si base of good quality suitable for manufacture of ULSI in which defects such as dislocation are reduced can be provided.
摘要翻译：本发明提供了一种处理衬底的方法，其中可以防止根据离子注入发生的晶体缺陷被集成在SIMOX衬底的制造中，通过将氧原子注入到Si衬底中而形成诸如位错或大空位的缺陷离子注入并与Si反应形成掩埋氧化膜。离子注入后的退火在加压至例如约100MPa的气体气氛下进行。在加压状态下，具有较小体积的结构在热力学上更稳定，并且在退火中阻止增加晶体变形的行为。因此，可以以均匀分散的状态铺设晶体缺陷，空位也可以熄灭，并且可以提供适合制造其中诸如位错的缺陷减少的ULSI的良好质量的Si基底。

24. 发明授权

US5979306A Heating pressure processing apparatus 失效
标题翻译：加热压力处理装置
公开(公告)号：US5979306A
公开(公告)日：1999-11-09
申请号：US47402
申请日：1998-03-25
申请人： Takao Fujikawa , Yutaka Narukawa , Itaru Masuoka , Takahiro Yuki , Yoshihiko Sakashita
发明人： Takao Fujikawa , Yutaka Narukawa , Itaru Masuoka , Takahiro Yuki , Yoshihiko Sakashita
IPC分类号： B01J3/00 , B01J3/03 , B01J3/04 , H01L21/314 , H01L21/324 , H01L21/768 , B30B15/34
CPC分类号： B01J3/008 , B01J3/03 , B01J3/04 , H01L21/314
摘要： A heating pressure processing apparatus in which gas sealing property and safety can be ensured, and economic property can be improved in heating pressure processing of workpieces such as Si wafers sheet by sheet. A processing vessel 1 formed of vessel components 2, 3 is divided into at least two parts or more in the axial direction thereof and has a seal ring 9 provided in the divided parts of the vessel components 2, parts 3 in such a manner as to be replaceable. The vessel components 2, 3 have shaped parts forming a processing space 5 for a workpiece 4 when the divided parts are sealed through the seal ring 9, the vessel components 2, 3 also having cooling means 10 for the seal ring 9. A ram is provided 18 for pressing the vessel components 2, 3 in the axial direction of the vessel in order to ensure the sealing in the divided parts; and a gas introducing device 20 is provided for introducing a pressurized gas to the processing space 5 in order to process the workpiece.
摘要翻译：能够确保气体密封性和安全性的加热压力处理装置，并且可以逐张地提高诸如Si晶片的工件的加热压力加工的经济性。由容器部件2,3形成的处理容器1在其轴向上被分成至少两部分以上，并且具有设置在容器部件2，部件3的分割部分中的密封环9，可更换容器部件2,3具有成形部件，当分隔部件通过密封环9密封时，形成工件4的处理空间5，容器部件2,3也具有用于密封环9的冷却装置10。设置用于在容器的轴向方向上按压容器部件2,3，以确保分割部分的密封; 并且设置有用于将加压气体引入处理空间5以便处理工件的气体引入装置20。

25. 发明授权

US5798126A Sealing device for high pressure vessel 失效
标题翻译：高压容器密封装置
公开(公告)号：US5798126A
公开(公告)日：1998-08-25
申请号：US861392
申请日：1997-05-21
申请人： Takao Fujikawa , Noriaki Nakai
发明人： Takao Fujikawa , Noriaki Nakai
IPC分类号： F16J13/02 , B01J3/03 , B30B5/02 , B30B11/00 , B29C43/10
CPC分类号： B30B11/002 , B01J3/03 , Y10S425/026 , Y10S425/047
摘要： A sealing device for preventing leakage of pressure in pressure-processing a workpiece to be processed under isostatic pressure in a high pressure vessel, includes a ring member fitted to the opening/closing end of the vessel. When a cover is closed, an axial seal ring and a plane seal ring are mounted, with the plane seal ring adhered to the cover.
摘要翻译：一种密封装置，用于防止在高压容器中以等压压力加工待处理的工件的压力泄漏，包括安装在容器的开/关端的环件。当盖子关闭时，安装轴向密封环和平面密封环，平面密封环粘附到盖子上。

26. 发明授权

US5698029A Vertical furnace for the growth of single crystals 失效
标题翻译：立式炉用于生长单晶
公开(公告)号：US5698029A
公开(公告)日：1997-12-16
申请号：US659013
申请日：1996-06-04
申请人： Takao Fujikawa , Katsuhiro Uehara , Yoshihiko Sakashita , Hiroshi Okada , Takao Kawanaka
发明人： Takao Fujikawa , Katsuhiro Uehara , Yoshihiko Sakashita , Hiroshi Okada , Takao Kawanaka
IPC分类号： C30B11/00 , C30B35/00
CPC分类号： C30B11/003 , C30B11/002 , C30B29/40 , Y10T117/10 , Y10T117/1016
摘要： A high-pressure container 1 as a furnace casing is equipped with insulating cylinder 2 of an inverted glass shape, and heater elements 18 individually mounted on heater mounting plates 16 arranged in parallel to section vertically the space for arranging the heater elements 18 at a given interval in the insulating cylinder 2. For the procedures of single crystal growth by heating in a high-pressure gas atmosphere, the insulating cylinder 2 and the heater mounting plates 16 can suppress the effects of spontaneous convection of a high-pressure gas and the effects of the radiation heat from an adjacent heater element, as less as possible, so that the temperature controllability of each heating zone can be improved whereby the vertical temperature distribution in the furnace can be controlled appropriately. Also, a heater element 18 of a larger aperture size can be maintained at a stably supported state, whereby a single crystal of a larger dimension can be grown.
摘要翻译：作为炉壳的高压容器1配备有倒置玻璃形状的绝缘筒体2和加热器元件18，其单独地安装在加热器安装板16上，该加热器安装板16垂直地布置在用于将加热器元件18布置在给定的空间绝缘筒2的间隔。对于通过在高压气体气氛中加热而实现单晶生长的步骤，绝缘筒2和加热器安装板16可以抑制高压气体的自发对流的效果和效果的相邻加热器元件的辐射热量越少越好，从而可以提高每个加热区域的温度可控性，从而可以适当地控制炉内的垂直温度分布。此外，可以将较大孔径的加热器元件18保持在稳定的支撑状态，从而可以生长更大尺寸的单晶。

27. 发明申请

US20100009042A1 PACKAGE FOR HIGH PRESSURE TREATMENT AND METHOD FOR TREATING FOODS AT HIGH PRESSURE 审中-公开
标题翻译：高压处理包装及高压处理食品的方法
公开(公告)号：US20100009042A1
公开(公告)日：2010-01-14
申请号：US12527486
申请日：2008-01-29
申请人： Takao Fujikawa , Takanori Yamauchi , Yoshikazu Kishi
发明人： Takao Fujikawa , Takanori Yamauchi , Yoshikazu Kishi
IPC分类号： B65D81/20 , B65D79/02 , B65D85/00
CPC分类号： B65D79/00 , A23L3/0155 , A23L5/30 , A61L2/04 , A61L2/26 , A61L2202/181 , B41M5/165 , B65B25/001 , G01L1/24 , G01L11/02
摘要： A package for high pressure treatment of foods and a method for treating foods at a high pressure, both being able to easily determine whether the foods accommodated in the package have been subjected to a high pressure treatment or not. The package for high pressure treatment includes a package body for accommodating articles to be treated at a high pressure, and an irreversible pressure-sensitive marker disposed on the package body at a position capable of being seen from the exterior of the package body and adapted to develop color when pressurized.
摘要翻译：用于食品的高压处理的包装和用于处理高压食品的方法，能够容易地确定容纳在包装中的食品是否经受高压处理。用于高压处理的包装包括用于容纳待处理物品在高压下的包装体，以及不可逆压敏标记，其设置在从包装体的外部可以看到的位置处的包装体上，加压时开发颜色。

28. 发明授权

US07008210B2 Hot isostatic pressing apparatus 有权
公开(公告)号：US07008210B2
公开(公告)日：2006-03-07
申请号：US10437061
申请日：2003-05-14
申请人： Yasuo Manabe , Shigeo Kofune , Makoto Yoneda , Takao Fujikawa
发明人： Yasuo Manabe , Shigeo Kofune , Makoto Yoneda , Takao Fujikawa
IPC分类号： B29C43/10 , B22F3/15
CPC分类号： F27B5/06 , B22F3/003 , B22F3/15 , B29K2105/251 , B29K2303/06 , B30B11/002 , F27B5/04 , F27B5/14 , F27B2005/162 , F27B2005/167 , F27D7/04 , F27D7/06 , F27D9/00 , F27D2009/0075 , Y10S425/815
摘要： A treatment chamber for heating and pressing workpieces and a heat insulating structure which covers the treatment chamber sideways and from above are provided within a high-pressure vessel. Below the treatment chamber are disposed a base heater for heating a pressure medium gas and a fan for supplying the pressure medium gas in a heated state into the treatment chamber and stirring the heated gas. The workpieces can be held on the heat insulating structure side, and the heat insulating structure and the workpieces can be taken out from the interior of the high-pressure vessel and can be conveyed together separately from a lower lid of the high-pressure vessel. A hot isostatic pressing apparatus is provided less expensively which can heat and press workpieces at a relatively low temperature of not higher than 600° C. Besides, it is possible to shorten the cycle time in HIP.

29. 发明授权

US06837086B2 Hot isostatic pressing method and apparatus 有权
标题翻译：热等静压法及装置
公开(公告)号：US06837086B2
公开(公告)日：2005-01-04
申请号：US10446671
申请日：2003-05-29
申请人： Yasuo Manabe , Shigeo Kofune , Makoto Yoneda , Takao Fujikawa
发明人： Yasuo Manabe , Shigeo Kofune , Makoto Yoneda , Takao Fujikawa
IPC分类号： B30B5/02 , B22F3/15 , C22F1/04 , C22F1/06 , F27B17/00 , B21D26/02
CPC分类号： B30B11/002 , C21D2241/02 , C22F1/04 , C22F1/06
摘要： While a workpiece is heated and pressed by one of a pair of high-pressure vessels, a workpiece being pressed by the other high-pressure vessel is placed in a heated state. In the reducing process after termination of heating and pressing treatment of the workpiece by one high-pressure vessel, both the high-pressure vessels are placed in communication, and the pressure medium gas released from one high-pressure vessel is poured into the other high-pressure vessel. After pressures of both the high-pressure vessels have assumed a nearly balanced state, the pressure medium gas is sucked out of one high-pressure vessel by a compressor and pressed, and is poured into the other high-pressure vessel, and the workpiece is heated and pressed by the other high-pressure vessel. By the method as described, considerable shortening of cycle time of HIP treatment is achieved, and the HIP treatment can be carried out with high efficiency.
摘要翻译：当工件被一对高压容器中的一个加热和加压时，由另一个高压容器压制的工件被置于加热状态。在通过一个高压容器对工件进行加热和加压处理终止之后的还原过程中，两个高压容器相互连通，将从一个高压容器释放的压力介质气体倒入另一个高压容器 -压力容器。在两个高压容器的压力都呈现接近平衡的状态之后，通过压缩机将压力介质气体从一个高压容器中吸出并被压制，并且被倒入另一个高压容器中，并且工件是被另一个高压容器加热和压制。通过所述方法，实现了HIP处理循环时间的缩短，HIP处理能够高效率地进行。

30. 发明授权

US06451682B1 Method of forming interconnect film 失效
标题翻译：形成互连膜的方法
公开(公告)号：US06451682B1
公开(公告)日：2002-09-17
申请号：US09429109
申请日：1999-10-28
申请人： Takao Fujikawa , Makoto Kadoguchi , Kohei Suzuki , Yasushi Mizusawa , Tomoyasu Kondou , Yoji Taguchi
发明人： Takao Fujikawa , Makoto Kadoguchi , Kohei Suzuki , Yasushi Mizusawa , Tomoyasu Kondou , Yoji Taguchi
IPC分类号： H01L214763
CPC分类号： H01L21/76864 , H01L21/76843 , H01L21/76873 , H01L21/76882
摘要： This invention provides a filming method for covering the surface of the insulating film of a semiconductor substrate with a copper interconnect film free from pores. The surface of the insulating film 2 of a semiconductor substrate 1 is filmed with a copper or copper alloy 3 by any one of plating, CVD and PVD, and the whole body is then heated under a high-pressure gas atmosphere to cover the surface with an interconnect film 4 free from pores.
摘要翻译：本发明提供了一种用不含孔的铜互连膜覆盖半导体衬底的绝缘膜的表面的成膜方法。半导体衬底1的绝缘膜2的表面用铜或铜合金3通过任何电镀，CVD和PVD之一，然后在高压气体气氛下加热全体，以便用不含孔的互连膜4覆盖表面。

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