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21. 发明申请

US20120217499A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20120217499A1
公开(公告)日：2012-08-30
申请号：US13397839
申请日：2012-02-16
申请人： Yuta ENDO , Kosei NODA
发明人： Yuta ENDO , Kosei NODA
IPC分类号： H01L29/786 , H01L21/20
CPC分类号： H01L27/1156 , G11C11/403 , G11C11/404 , H01L21/84 , H01L27/10873 , H01L27/1203 , H01L29/42384 , H01L29/4908 , H01L29/7869
摘要： A method for forming a U-shaped vertically long groove in a region where a channel portion of a transistor is formed to make a channel length longer than an apparent channel length additionally requires a photolithography process for forming a groove; therefore, it has a problem in terms of costs and yield. By forming a three-dimensional channel region with the use of a gate electrode or a structure having an insulating surface, a channel length is made three times or more, preferably five times or more, further preferably ten times or more as long as a channel length when seen from the above.
摘要翻译：在形成沟道部分以形成沟道长度比表观沟道长度更长的区域中形成U形垂直长沟槽的方法另外需要用于形成沟槽的光刻工艺; 因此，在成本和产量方面存在问题。通过使用栅电极或具有绝缘表面的结构形成三维沟道区，沟道长度为沟道长度的3倍以上，优选为沟道长度的5倍以上，更优选为10倍以上从上面看的长度。

22. 发明申请

US20120040495A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20120040495A1
公开(公告)日：2012-02-16
申请号：US13197825
申请日：2011-08-04
申请人： Kosei NODA , Toshinari SASAKI
发明人： Kosei NODA , Toshinari SASAKI
IPC分类号： H01L21/385
CPC分类号： H01L29/66969 , H01L21/02164 , H01L21/465 , H01L21/477 , H01L22/10 , H01L29/401 , H01L29/4908 , H01L29/78603 , H01L29/7869
摘要： A transistor with superior electric characteristics is manufactured. An oxide insulating film is formed over a substrate, an oxide semiconductor film is formed over the oxide insulating film, heat treatment is then conducted at a temperature at which hydrogen contained in the oxide semiconductor film is desorbed and part of oxygen contained in the oxide insulating film is desorbed, then the heated oxide semiconductor film is etched into a predetermined shape to form an island-shaped oxide semiconductor film, a pair of electrodes is formed over the island-shaped oxide semiconductor film, a gate insulating film is formed over the pair of electrodes and the island-shaped oxide semiconductor film, and a gate electrode is formed over the gate insulating film.
摘要翻译：制造出具有优异电特性的晶体管。在衬底上形成氧化物绝缘膜，在氧化物绝缘膜上形成氧化物半导体膜，然后在氧化物半导体膜中所含的氢被解吸的温度和氧化物绝缘中包含的部分氧进行热处理膜被解吸，然后将加热的氧化物半导体膜蚀刻成预定形状以形成岛状氧化物半导体膜，在岛状氧化物半导体膜上形成一对电极，在该对上形成栅极绝缘膜的电极和岛状氧化物半导体膜，并且栅极电极形成在栅极绝缘膜上。

23. 发明申请

US20110284845A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110284845A1
公开(公告)日：2011-11-24
申请号：US13110240
申请日：2011-05-18
申请人： Yuta ENDO , Toshinari SASAKI , Kosei NODA , Mizuho SATO
发明人： Yuta ENDO , Toshinari SASAKI , Kosei NODA , Mizuho SATO
IPC分类号： H01L29/786 , H01L21/336 , H01L29/12
CPC分类号： H01L21/02554 , H01L21/02488 , H01L21/02664 , H01L27/1225 , H01L29/4908 , H01L29/66969 , H01L29/78606 , H01L29/7869
摘要： An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel. Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.
摘要翻译：使用含有硅氧化物自由基的绝缘层作为与用于形成沟道的氧化物半导体层接触的绝缘层。氧从绝缘层释放，由此可以减少氧化物半导体层中的氧缺乏和绝缘层与氧化物半导体层之间的界面状态。因此，可以制造可靠性高，电特性变化小的半导体装置。

24. 发明申请

US20110284844A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110284844A1
公开(公告)日：2011-11-24
申请号：US13110236
申请日：2011-05-18
申请人： Yuta ENDO , Toshinari SASAKI , Kosei NODA , Mizuho SATO
发明人： Yuta ENDO , Toshinari SASAKI , Kosei NODA , Mizuho SATO
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78606 , H01L29/66969 , H01L29/78603 , H01L29/7869
摘要： An object of the present invention is to manufacture a semiconductor device where fluctuation in electrical characteristics is small and reliability is high in a transistor in which an oxide semiconductor is used. An insulating layer from which oxygen is released by heating is used as a base insulating layer of an oxide semiconductor layer which forms a channel. Oxygen is released from the base insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the base insulating layer and the oxide semiconductor layer can be reduced. Thus, a semiconductor device where fluctuation in electrical characteristics is small and reliability is high can be manufactured.
摘要翻译：本发明的目的是制造其中使用氧化物半导体的晶体管的电特性波动小并且可靠性高的半导体器件。使用通过加热而释放氧的绝缘层作为形成沟道的氧化物半导体层的基极绝缘层。氧从基底绝缘层释放出来，由此可以减少氧化物半导体层的缺氧和基底绝缘层与氧化物半导体层之间的界面状态。因此，可以制造电特性波动小，可靠性高的半导体装置。

25. 发明申请

US20120228687A1 SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：半导体存储器件
公开(公告)号：US20120228687A1
公开(公告)日：2012-09-13
申请号：US13410608
申请日：2012-03-02
申请人： Kosei NODA
发明人： Kosei NODA
IPC分类号： H01L27/108 , H01L27/088
CPC分类号： H01L27/1156 , G11C16/0433 , H01L28/40
摘要： A semiconductor memory device includes a semiconductor film; a first gate insulating film covering the semiconductor film; a first gate electrode provided over the semiconductor film with the first gate insulating film interposed therebetween; a first conductive film which is provided over the first gate insulating film; an insulating film which is provided over the first gate insulating film, exposes top surfaces of the first gate electrode and the first conductive film, and has a groove portion between the first gate electrode and the first conductive film; an oxide semiconductor film which is provided over the insulating film and is in contact with the first gate electrode, the first conductive film, and the groove portion; a second gate insulating film covering the oxide semiconductor film; and a second gate electrode provided over the oxide semiconductor film and the groove portion with the second gate insulating film interposed therebetween.
摘要翻译：半导体存储器件包括半导体膜; 覆盖半导体膜的第一栅极绝缘膜; 设置在所述半导体膜上的第一栅电极，其间插入有所述第一栅极绝缘膜; 设置在所述第一栅极绝缘膜上的第一导电膜; 设置在第一栅极绝缘膜上的绝缘膜暴露第一栅电极和第一导电膜的顶表面，并且在第一栅电极和第一导电膜之间具有沟槽部分; 氧化物半导体膜，设置在所述绝缘膜上并与所述第一栅电极，所述第一导电膜和所述槽部接触; 覆盖氧化物半导体膜的第二栅极绝缘膜; 以及设置在所述氧化物半导体膜和所述沟槽部分上方的第二栅电极，其间插入有所述第二栅极绝缘膜。

26. 发明申请

US20120077330A1 METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造SOI衬底和半导体器件的方法
公开(公告)号：US20120077330A1
公开(公告)日：2012-03-29
申请号：US13271646
申请日：2011-10-12
申请人： Kosei NODA
发明人： Kosei NODA
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： First etching is performed on a surface of a single crystal semiconductor layer formed with no substrate bias applied. The single crystal semiconductor layer is formed by attaching a single crystal semiconductor substrate including an embrittled region to a supporting substrate so that an oxide layer is sandwiched between the single crystal semiconductor substrate and the supporting substrate and separating the single crystal semiconductor substrate into the single crystal semiconductor layer and part of the single crystal semiconductor substrate at the embrittled region. After the first etching, the single crystal semiconductor layer is irradiated with a laser beam and at least part of the surface of the single crystal semiconductor layer is melted and solidified. Then, second etching is performed on the surface of the single crystal semiconductor layer with no substrate bias applied.
摘要翻译：在不施加衬底偏压的单晶半导体层的表面上进行第一蚀刻。单晶半导体层通过将包含脆化区域的单晶半导体衬底附着在支撑衬底上而形成，使得氧化物层夹在单晶半导体衬底和支撑衬底之间，并将单晶半导体衬底分离成单晶半导体层和部分单晶半导体衬底在脆化区域。在第一蚀刻之后，用激光束照射单晶半导体层，并且使单晶半导体层的表面的至少一部分熔融固化。然后，在不施加衬底偏置的单晶半导体层的表面上进行第二蚀刻。

27. 发明申请

US20120049189A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120049189A1
公开(公告)日：2012-03-01
申请号：US13188992
申请日：2011-07-22
申请人： Toshinari SASAKI , Hitomi SATO , Kosei NODA , Yuta ENDO , Mizuho IKARASHI , Keitaro IMAI , Atsuo ISOBE , Yutaka OKAZAKI
发明人： Toshinari SASAKI , Hitomi SATO , Kosei NODA , Yuta ENDO , Mizuho IKARASHI , Keitaro IMAI , Atsuo ISOBE , Yutaka OKAZAKI
IPC分类号： H01L29/12 , H01L21/36
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78603 , H01L29/78606
摘要： It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.
摘要翻译：本发明的目的是制造其中包括氧化物半导体的晶体管具有常态特性，电特性波动小，可靠性高的半导体器件。首先，在基板上进行第一热处理，在基板上形成基极绝缘层，在基底绝缘层上形成氧化物半导体层，对形成氧化物半导体的工序进行第一热处理的工序在不暴露于空气的情况下执行层。接下来，在形成氧化物半导体层之后，进行第二热处理。使用通过加热而释放氧的绝缘层作为基底绝缘层。

28. 发明申请

US20120032172A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20120032172A1
公开(公告)日：2012-02-09
申请号：US13193755
申请日：2011-07-29
申请人： Kosei NODA , Yuta ENDO , Toshinari SASAKI
发明人： Kosei NODA , Yuta ENDO , Toshinari SASAKI
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/41733
摘要： A semiconductor device including the following components and a manufacturing method of the semiconductor device are provided. The semiconductor device includes a substrate; an oxide semiconductor layer over the substrate; a source electrode and a drain electrode whose end portion has a taper angle and whose upper end portion has a curved surface, the source electrode and the drain electrode being electrically connected to the oxide semiconductor layer; a gate insulating layer being in contact with a part of the oxide semiconductor layer and covering the oxide semiconductor layer, the source electrode, and the drain electrode; and a gate electrode overlapping with the oxide semiconductor layer and being over the gate insulating layer.
摘要翻译：提供了包括以下部件的半导体器件和半导体器件的制造方法。半导体器件包括衬底; 衬底上的氧化物半导体层; 源极电极和漏电极，其端部具有锥角并且其上端部具有弯曲表面，所述源电极和漏电极电连接到所述氧化物半导体层; 栅绝缘层与所述氧化物半导体层的一部分接触并覆盖所述氧化物半导体层，所述源电极和所述漏电极; 以及与氧化物半导体层重叠并在栅极绝缘层上方的栅电极。

29. 发明申请

US20120003795A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20120003795A1
公开(公告)日：2012-01-05
申请号：US13165963
申请日：2011-06-22
申请人： Kosei NODA
发明人： Kosei NODA
IPC分类号： H01L21/336
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78618
摘要： An object is to provide a manufacturing method of a semiconductor device having a high field effect mobility and including an oxide semiconductor layer in a semiconductor device including an oxide semiconductor. Another object is to provide a manufacturing method of a semiconductor device capable of high speed operation. An oxide semiconductor layer is terminated by a halogen element, and thus an increase in the contact resistance between the oxide semiconductor layer and a conductive layer in contact with the oxide semiconductor layer is suppressed. Therefore, the contact resistance between the oxide semiconductor layer and the conductive layer becomes favorable and a transistor having a high field effect mobility can be manufactured.
摘要翻译：本发明的目的是提供具有高场效应迁移率的半导体器件的制造方法，并且在包括氧化物半导体的半导体器件中包括氧化物半导体层。另一个目的是提供能够进行高速操作的半导体器件的制造方法。氧化物半导体层被卤素元件端接，从而抑制氧化物半导体层与与氧化物半导体层接触的导电层之间的接触电阻的增加。因此，氧化物半导体层和导电层之间的接触电阻变得良好，并且可以制造具有高场效应迁移率的晶体管。

30. 发明申请

US20110284839A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110284839A1
公开(公告)日：2011-11-24
申请号：US13107283
申请日：2011-05-13
申请人： Shunpei YAMAZAKI , Toshinari SASAKI , Kosei NODA
发明人： Shunpei YAMAZAKI , Toshinari SASAKI , Kosei NODA
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L29/66969 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/385 , H01L27/1225 , H01L29/7869
摘要： It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. An oxide semiconductor film serving as a channel formation region of a transistor is formed by a sputtering method at a temperature higher than 200° C., so that the number of water molecules eliminated from the oxide semiconductor film can be 0.5/nm3 or less according to thermal desorption spectroscopy. A substance including a hydrogen atom such as hydrogen, water, a hydroxyl group, or hydride which causes variation in the electric characteristics of a transistor including an oxide semiconductor is prevented from entering the oxide semiconductor film, whereby the oxide semiconductor film can be highly purified and made to be an electrically i-type (intrinsic) semiconductor.
摘要翻译：本发明的目的是提供一种具有稳定的电特性和高可靠性的氧化物半导体的半导体装置。通过溅射法在高于200℃的温度下形成用作晶体管的沟道形成区的氧化物半导体膜，从氧化物半导体膜中除去的水分子数可以为0.5nm / nm 3以下到热解吸光谱。包含氢原子的物质，例如氢，水，羟基或氢化物，其导致包括氧化物半导体的晶体管的电特性发生变化，从而防止氧化物半导体膜进入氧化物半导体膜，由此氧化物半导体膜可以被高度纯化并制成电i型（本征）半导体。

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