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21. 发明授权

US6030741A Positive resist composition 失效
标题翻译：正抗蚀剂组成
公开(公告)号：US6030741A
公开(公告)日：2000-02-29
申请号：US919368
申请日：1997-08-28
申请人： Kousuke Doi , Takako Suzuki , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Kousuke Doi , Takako Suzuki , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/022 , G03F7/039 , G03F7/20 , G03F7/30 , H01L21/027 , G03F7/023
CPC分类号： G03F7/0048 , G03F7/0226
摘要： The present invention provides a positive resist composition and method capable of achieving a resist pattern whose photosensitivity is less variable relative to its thickness, which exhibits small thickness reduction even when the pattern is fine, is capable of coping with irregularities in the exposure value since it has a wide focal-depth range, and exhibits reduced size-deviation from the mask size. The positive resist composition comprises (A) an alkali-soluble resin, (B) a quinonediazide-group-containing compound, and (C) an organic solvent, wherein the ingredient (C) is a mixture solvent containing (i) 2-heptanone, (ii) ethyl lactate, and (iii) a high-boiling organic solvent having a boiling point of 200 to 350.degree. C. The above-described resist pattern can be formed by using the positive resist composition.
摘要翻译：本发明提供一种能够实现光敏性相对于其厚度变化较小的抗蚀剂图案的正型抗蚀剂组合物和方法，即使图案细小也能显示小的厚度减小，因此可以应对曝光值的不规则性具有宽的焦深范围，并且显示出与面罩尺寸的尺寸偏差的减小。正型抗蚀剂组合物包含（A）碱溶性树脂，（B）含醌二叠氮化物基团的化合物和（C）有机溶剂，其中成分（C）是含有（i）2-庚酮，（ii）乳酸乙酯，和（iii）沸点为200〜350℃的高沸点有机溶剂。上述抗蚀剂图案可以通过使用正性抗蚀剂组合物形成。

22. 发明授权

US5853948A Positive photoresist compositions and multilayer resist materials using the same 失效
标题翻译：正型光致抗蚀剂组合物和使用其的多层抗蚀剂材料
公开(公告)号：US5853948A
公开(公告)日：1998-12-29
申请号：US960621
申请日：1997-10-29
申请人： Atsushi Sawano , Junichi Mizuta , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Atsushi Sawano , Junichi Mizuta , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/022 , G03F7/023 , G03F7/11 , H01L21/027
CPC分类号： G03F7/0226
摘要： A positive photoresist composition comprising (A) an alkali-soluble resin; (B) a quinonediazido group containing compound; and (C) at least one sulfonyl halide represented by the following general formula (I): R.sup.1 --SO.sub.2 --X (I) where R.sup.1 is an alkyl group, a substituted alkyl group, an alkenyl group, an aryl group or a substituted aryl group; X is a halogen atom, as well as a multilayer resist material using this composition. Very fine (
摘要翻译：一种正性光致抗蚀剂组合物，其包含（A）碱溶性树脂; （B）含有醌二叠氮基的化合物; 和（C）由以下通式（I）表示的至少一种磺酰卤：R1-SO2-X（Ⅰ）其中R1是烷基，取代的烷基，烯基，芳基或取代的芳基组; X是卤素原子，以及使用该组合物的多层抗蚀剂材料。可以形成具有高特征或边缘完整性的非常精细（<0.4μm）抗蚀剂图案，其在显影后在暴露区域和未曝光区域之间提供良好的对比度，并且确保更宽的曝光幅度，更好的聚焦深度特征和更清晰的截面轮廓。

23. 发明授权

US5702861A Positive photoresist composition 失效
标题翻译：正光致抗蚀剂组合物
公开(公告)号：US5702861A
公开(公告)日：1997-12-30
申请号：US791166
申请日：1997-01-30
申请人： Satoshi Niikura , Takako Suzuki , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Satoshi Niikura , Takako Suzuki , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/022 , G03F7/023 , H01L21/027
CPC分类号： G03F7/0226
摘要： A positive photoresist composition comprising: (A) an alkali-soluble resin; (B) a quinone diazide group-containing compound; and (C) at least one compound selected from the polyhydroxy compounds, such as 1,3-bis�2-(5-cyclohexyl-2-methyl-4-hydroxyphenyl)-2-propyl!benzene. The composition of the present invention exhibits excellent image contrast between exposed portions and unexposed portions, and actualizes formation of a resist pattern with excellent resolution, exposure range, and focal depth range.
摘要翻译：一种正性光致抗蚀剂组合物，其包含：（A）碱溶性树脂; （B）含醌二叠氮基的化合物; 和（C）至少一种选自多羟基化合物的化合物，例如1,3-双[2-（5-环己基-2-甲基-4-羟基苯基）-2-丙基]苯。本发明的组合物在曝光部分和未曝光部分之间显示出优异的图像对比度，并且实现了具有优异的分辨率，曝光范围和焦深范围的抗蚀剂图案的形成。

24. 发明授权

US5501936A Positive-working quinonediazide photoresist composition containing a cyclohexyl-substituted triphenylmethane compound 失效
标题翻译：含有环己基取代的三苯基甲烷化合物的正性醌二叠氮化物光致抗蚀剂组合物
公开(公告)号：US5501936A
公开(公告)日：1996-03-26
申请号：US362857
申请日：1994-12-23
申请人： Hiroshi Hosoda , Remi Numata , Kousuke Doi , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Hiroshi Hosoda , Remi Numata , Kousuke Doi , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/022 , G03F7/039 , H01L21/027 , G03F7/023
CPC分类号： G03F7/0226
摘要： An improved positive-working photoresist composition useful in the fine patterning work of a resist layer is proposed which is capable of giving a patterned resist layer having excellent resolution, heat resistance and orthogonality of the cross sectional profile of a line pattern with a high sensitivity to actinic rays and a wide range of the focusing depth. The photoresist composition comprises, as a uniform mixture in the form of a solution, (a) an alkali-soluble novolac resin, (b) a naphthoquinone-1,2-diazido group-containing compound as a photosensitizing ingredient and (c) a specific phenolic triphenyl methane compound substituted by cyclohexyl groups on two of the phenyl groups, such as bis(3-cyclohexyl-4-hydroxy-6-methylphenyl)-3,4-dihydroxyphenyl methane or bis(3-cyclohexyl-6-hydroxy-4-methylphenyl)-3,4-dihydroxyphenyl methane, in a specified amount.
摘要翻译：提出了可用于抗蚀剂层的精细图案化工作的改进的正性光致抗蚀剂组合物，其能够提供具有高灵敏度的线图案的横截面轮廓的优异分辨率，耐热性和正交性的图案化抗蚀剂层光化射线和广泛的聚焦深度。光致抗蚀剂组合物包含作为溶液形式的均匀混合物，（a）碱溶性酚醛清漆树脂，（b）含萘醌-1,2-二叠氮基化合物作为光敏成分，（c）在两个苯基上的环己基取代的特异性酚类三苯基甲烷化合物，例如双（3-环己基-4-羟基-6-甲基苯基）-3,4-二羟基苯基甲烷或双（3-环己基-6-羟基 - 4-甲基苯基）-3,4-二羟基苯基甲烷。

25. 发明授权

US5498514A Lithographic double-coated patterning plate with undercoat levelling layer 失效
标题翻译：平版印刷双层涂层图案板，底层平整层
公开(公告)号：US5498514A
公开(公告)日：1996-03-12
申请号：US287895
申请日：1994-08-09
申请人： Taku Nakao , Hiroyuki Yamazaki , Nobuo Tokutake , Masato Saito , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Taku Nakao , Hiroyuki Yamazaki , Nobuo Tokutake , Masato Saito , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/09 , G03C1/815
CPC分类号： G03F7/094
摘要： An improvement is proposed in a double-coated patterning plate, which consists of a substrate, an undercoat levelling layer and a photoresist layer thereon, as well as in the patterning method therewith. Different from conventional double-coated patterning plate in which the undercoat levelling layer is formed from poly(methyl methacrylate) resin, the layer in the invention is formed from a copolymeric resin of methyl methacrylate and glycidyl methacrylate in a specified copolymerization ratio and the resin is admixed with 2,2',4,4'-tetrahydroxybenzophenone. By virtue of the use of this unique resin composition for the undercoat levelling layer, the troubles due to intermixing between the undercoat levelling layer and the photoresist layer thereon can be avoided to impart the patterned resist layer with excellent properties.
摘要翻译：在其中由基底，底涂层流平层和光致抗蚀剂层组成的双面图案化板以及其图案化方法中提出了一种改进。与由聚（甲基丙烯酸甲酯）树脂形成底层平整层的常规双面图案化板不同，本发明的层由特定共聚比例的甲基丙烯酸甲酯和甲基丙烯酸缩水甘油酯的共聚树脂形成，树脂为与2,2'，4,4'-四羟基二苯甲酮混合。由于使用这种独特的树脂组合物作为底层调平层，所以可以避免由于底层平整层和其上的光致抗蚀剂层之间的混合所引起的问题，以赋予图案化抗蚀剂层优异的性能。

26. 发明授权

US4833067A Developing solution for positive-working photoresist comprising tmah and non-ionic surfactant 失效
标题翻译：用于正工作光致抗蚀剂的显影溶液包含tmah和非离子表面活性剂
公开(公告)号：US4833067A
公开(公告)日：1989-05-23
申请号：US246930
申请日：1988-09-19
申请人： Hatsuyuki Tanaka , Hidekatsu Kohara , Yoshiyuki Sato , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
发明人： Hatsuyuki Tanaka , Hidekatsu Kohara , Yoshiyuki Sato , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
IPC分类号： G03C1/72 , G03C5/18 , G03F7/30 , G03F7/32 , H01L21/027 , H01L21/30
CPC分类号： G03F7/322 , G03C5/18
摘要： The aqueous developing solution of the invention for positive-working photoresist compositions contains, in addition to an organic basic compound free from metallic ions, such as tetramethyl ammonium hydroxide and choline, as the principal ingredient, from 50 to 5000 ppm of an acetylene alcohol. In comparison with conventional developing solutions, the inventive developing solution is advantageous in the uniformity of the patterned photoresist layer, higher sensitivity and smaller temperature dependency of development and less drawbacks due to foaming of the solution.
摘要翻译：本发明的正性光致抗蚀剂组合物的水性显影液除了含有金属离子的有机碱性化合物外，还含有氢氧化四甲基铵和胆碱作为主要成分，为50-5000ppm的乙炔醇。与传统的显影液相比，本发明的显影溶液在图案化光刻胶层的均匀性方面是有利的，更高的灵敏度和更小的显影温度依赖性以及由于溶液的发泡而引起的缺点。

27. 发明授权

US06620978B2 Positive photoresist composition and process for synthesizing polyphenol compound 失效
标题翻译：正光致抗蚀剂组合物和合成多酚化合物的方法
公开(公告)号：US06620978B2
公开(公告)日：2003-09-16
申请号：US10207840
申请日：2002-07-31
申请人： Satoshi Shimatani , Ken Miyagi , Satoshi Niikura , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Satoshi Shimatani , Ken Miyagi , Satoshi Niikura , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： C07C3912
CPC分类号： G03F7/022
摘要： The present invention provides a positive photoresist composition including (A) an alkali-soluble resin and (B) a photosensitizer, and the ingredient (B) is a quinonediazide ester of, for example, 2,6-bis[4-hydroxy-3-(2-hydroxy-3,5-dimethylbenzyl)-2,5-dimethylbenzyl]-4-methylphenol, where the average degree of esterification of 20% to 80%.
摘要翻译：本发明提供了包含（A）碱溶性树脂和（B）光敏剂的正性光致抗蚀剂组合物，成分（B）是例如2,6-双[4-羟基-3 - （2-羟基-3,5-二甲基苄基）-2,5-二甲基苄基] -4-甲基苯酚，其中平均酯化度为20％至80％。

28. 发明授权

US06379859B2 Positive photoresist composition and process for forming resist pattern using same 失效
公开(公告)号：US06379859B2
公开(公告)日：2002-04-30
申请号：US09322978
申请日：1999-06-01
申请人： Takako Suzuki , Sachiko Tamura , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Takako Suzuki , Sachiko Tamura , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7023
CPC分类号： G03F7/0226 , G03F7/022
摘要： Disclosed are a positive photoresist composition including (A) an alkali-soluble resin, (B) a photosensitizer containing a quinonediazide ester of, e.g., bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane and (C) e.g., 2,6-bis(2,5-dimethyl-4-hydroxybenzyl)-4-methylphenol; and a process including the steps of coating the composition onto a 8 to 12-inch substrate, drying, exposing and developing the same. The composition which can form a pattern having a good shape whose dimensional changes are minimized in a wide range over surface of the substrate, particularly in processes using a large-diameter substrate, and the process for forming a resist pattern using the composition are provided.

29. 发明授权

US06187500B1 Positive photoresist compositions and multilayer resist materials using same 有权
标题翻译：正光致抗蚀剂组合物和使用其的多层抗蚀剂材料
公开(公告)号：US06187500B1
公开(公告)日：2001-02-13
申请号：US09432417
申请日：1999-11-02
申请人： Ken Miyagi , Kousuke Doi , Atsuko Hirata , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Ken Miyagi , Kousuke Doi , Atsuko Hirata , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7023
CPC分类号： G03F7/0236 , C08G8/20 , C08G8/28 , C08L61/12 , C08L61/14
摘要： In a positive photoresist composition including (A) an alkali-soluble novolak resin and (B) a naphthoquinonediazide ester, the alkali-soluble novolak resin is obtained synthetically by condensation of phenol compounds and an aldehyde or ketone, and the phenol compounds include, for example, 1% to 20% by mole of hydroquinone, 30% to 95% by mole of m-cresol and 2% to 50% by mole of 2,5-xylenol. Thus, a high-definition positive photoresist composition can be obtained, which inhibits the formation of scum, and is satisfactory in sensitivity, sectional shape, focal depth range and other properties even in a process for the formation of an ultrafine resist pattern of 0.30 &mgr;m or below by lithography using i-ray.
摘要翻译：在包含（A）碱溶性酚醛清漆树脂和（B）萘醌二叠氮化物酯的正性光致抗蚀剂组合物中，通过酚化合物和醛或酮的缩合合成获得碱溶性酚醛清漆树脂，并且酚化合物包括例如，氢醌的1〜20摩尔％，间甲酚的30〜95摩尔％，2,5-二甲苯酚2〜50摩尔％。因此，即使在形成0.30微米的超细抗蚀剂图案的工艺中，也可以获得抑制浮渣形成的高分辨正性光致抗蚀剂组合物，并且在灵敏度，截面形状，焦深范围和其它性能方面令人满意以下使用i-ray进行平版印刷。

30. 发明授权

US6120969A Polyphenol compound, quinonediazide ester and positive photoresist composition 失效
标题翻译：多酚化合物，醌二叠氮化物酯和正性光致抗蚀剂组合物
公开(公告)号：US6120969A
公开(公告)日：2000-09-19
申请号：US269881
申请日：1999-04-02
申请人： Mitsuo Hagihara , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama , Tetsuya Nakajima
发明人： Mitsuo Hagihara , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama , Tetsuya Nakajima
IPC分类号： C07C39/15 , C07C309/71 , C07C309/74 , C07C309/76 , G03F7/004 , G03F7/022 , H01L21/027 , G03F7/023
CPC分类号： G03F7/022
摘要： Disclosed is, for example, bis(2,5-dimethyl-3-(2-hydroxy-5-ethylbenzyl)-4-hydroxyphenyl)methane and quinonediazide ester thereof. These are used for positive photoresist compositions. According to the invention, positive photoresist compositions having a high definition, a high sensitivity and a large exposure margin can be provided.
摘要翻译： PCT No.PCT / JP99 / 03472 Sec。一九九九年四月二日 102（e）1999年4月2日PCT 1998年8月4日提交的PCT是例如双（2,5-二甲基-3-（2-羟基-5-乙基苄基）-4-羟基苯基）甲烷和醌二叠氮化物其中。这些用于正性光致抗蚀剂组合物。根据本发明，可以提供具有高清晰度，高灵敏度和大曝光裕度的正性光致抗蚀剂组合物。

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