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    • 21. 发明申请
    • Signal Processing Apparatus and Signal Processing Method
    • 信号处理装置及信号处理方法
    • US20060146648A1
    • 2006-07-06
    • US11276674
    • 2006-03-09
    • Masakazu Ukita
    • Masakazu Ukita
    • G01S3/80
    • H04R1/406H04N7/15H04R3/005H04R2499/13
    • The invention provides a method and apparatus by which the direction in or the position at which a signal source such as a sound source is present is estimated. A signal or signals from a signal source or a plurality of signal sources are received by a plurality of reception apparatus, and the received signals are decomposed into signals of different frequency bands by a plurality of band-pass filters. Then, cross correlation functions between the different frequency band signals are calculated for individual combinations of the reception apparatus for the individual corresponding frequency bands. If the power of noise having no directivity is high in some of the frequency bands, then the cross correlation functions of the frequency band do not exhibit a maximum value. Therefore, an influence of the noise can be suppressed effectively when delay times of the individual reception apparatus which depend upon the direction or directions or the position or positions of the signal source or sources are estimated.
    • 本发明提供一种方法和装置,通过该方法和装置,可以估计存在诸如声源的信号源的方向或位置。 来自信号源或多个信号源的信号或信号由多个接收装置接收,并且接收的信号被多个带通滤波器分解成不同频带的信号。 然后,针对各个相应频带的接收装置的各个组合计算不同频带信号之间的互相关函数。 如果在一些频带中没有方向性的噪声的功率很高,则频带的互相关函数不表现出最大值。 因此,在根据信号源或方向的方向或位置或位置的各个接收装置的延迟时间被估计时,可以有效地抑制噪声的影响。
    • 22. 发明授权
    • Semiconductor laser and production method thereof
    • 半导体激光及其制造方法
    • US06682949B2
    • 2004-01-27
    • US10191151
    • 2002-07-09
    • Masakazu Ukita
    • Masakazu Ukita
    • H01L2100
    • B82Y20/00H01S5/0658H01S5/2022H01S5/2231H01S5/2237H01S5/3415
    • A semiconductor laser basically includes a first cladding layer; an active layer; a second cladding layer; and a current constriction means for defining a current injection region in the active layer. The active layer has a gain region which acquires an optical gain by current injection thereto; a saturable absorption region in which current injection thereto little occurs and light effusion thereto occurs; and an outside region, being in contact with the saturable absorption region, in which current injection thereto little occurs and light effusion thereto little occurs. In this semiconductor laser, an effective band gap of the saturable absorption region is set to be larger than that of the outside region. With this configuration, carriers in the saturable absorption region are efficiently migrated to the outside region, so that the carrier lifetime in the saturable absorption region is actually shortened. As a result, the semiconductor laser can sustain the self pulsation at a high light output and a high operational temperature, and further can be produced with a good production yield.
    • 半导体激光器基本上包括第一覆层; 活性层 第二覆层; 以及用于限定有源层中的电流注入区域的电流收缩装置。 有源层具有通过电流注入而获得光学增益的增益区域; 饱和吸收区域,其中几乎不发生电流注入并发生光渗出; 以及与可饱和吸收区域接触的外部区域,其中几乎不发生电流注入,并且少量发生光渗出。 在该半导体激光器中,可饱和吸收区域的有效带隙被设定为大于外部区域的有效带隙。 利用这种构造,可饱和吸收区域中的载流子被有效地迁移到外部区域,从而实际上缩短了可饱和吸收区域中的载流子寿命。 结果,半导体激光器能够在高光输出和高操作温度下维持自脉动,并且可以以良好的产量获得。
    • 23. 发明授权
    • Semiconductor laser and production method thereof
    • 半导体激光及其制造方法
    • US06470039B1
    • 2002-10-22
    • US09457133
    • 1999-12-09
    • Masakazu Ukita
    • Masakazu Ukita
    • H01S500
    • B82Y20/00H01S5/0658H01S5/2022H01S5/2231H01S5/2237H01S5/3415
    • A semiconductor laser basically includes a first cladding layer; an active layer; a second cladding layer; and a current constriction means for defining a current injection region in the active layer. The active layer has a gain region which acquires an optical gain by current injection thereto; a saturable absorption region in which current injection thereto little occurs and light effusion thereto occurs; and an outside region, being in contact with the saturable absorption region, in which current injection thereto little occurs and light effusion thereto little occurs. In this semiconductor laser, an effective band gap of the saturable absorption region is set to be larger than that of the outside region. With this configuration, carriers in the saturable absorption region are efficiently migrated to the outside region, so that the carrier lifetime in the saturable absorption region is actually shortened. As a result, the semiconductor laser can sustain the self pulsation at a high light output and a high operational temperature, and further can be produced with a good production yield.
    • 半导体激光器基本上包括第一覆层; 活性层 第二覆层; 以及用于限定有源层中的电流注入区域的电流收缩装置。 有源层具有通过电流注入而获得光学增益的增益区域; 饱和吸收区域,其中几乎不发生电流注入并发生光渗出; 以及与可饱和吸收区域接触的外部区域,其中几乎不发生电流注入,并且少量发生光渗出。 在该半导体激光器中,可饱和吸收区域的有效带隙被设定为大于外部区域的有效带隙。 利用这种构造,可饱和吸收区域中的载流子被有效地迁移到外部区域,从而实际上缩短了可饱和吸收区域中的载流子寿命。 结果,半导体激光器能够在高光输出和高操作温度下维持自脉动,并且可以以良好的产量获得。