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21. 发明授权

US06797996B1 Compound semiconductor device and method for fabricating the same 失效
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US06797996B1
公开(公告)日：2004-09-28
申请号：US10445035
申请日：2003-05-27
申请人： Masahiro Hikita , Manabu Yanagihara , Tuyoshi Tanaka
发明人： Masahiro Hikita , Manabu Yanagihara , Tuyoshi Tanaka
IPC分类号： H01L29737
CPC分类号： H01L29/66318 , H01L29/0821 , H01L29/1004 , H01L29/365 , H01L29/7371
摘要： A compound semiconductor device includes an emitter layer, a base layer which is in contact with the emitter layer and formed of a first compound semiconductor, a collector layer which is in contact with the base layer and formed of a second compound semiconductor having a wider bandgap than that of the first compound semiconductor. In the device, a delta doped layer having a higher concentration of an impurity than that of the collector layer is formed at the heterojunction interface between the collector layer and the base layer or in a region of the collector layer located at about 10 nm or less from the heterojunction interface with the base layer.
摘要翻译：化合物半导体器件包括发射极层，与发射极层接触并由第一化合物半导体形成的基极层，与基极层接触并由具有较宽带隙的第二化合物半导体形成的集电极层比第一化合物半导体。在器件中，在集电极层和基极层之间的异质结界面处或在位于约10nm以下的集电极层的区域中形成杂质浓度高于集电极层的Δ掺杂层从与基层的异质结界面。

22. 发明授权

US08779438B2 Field-effect transistor with nitride semiconductor and method for fabricating the same 有权
标题翻译：具有氮化物半导体的场效应晶体管及其制造方法
公开(公告)号：US08779438B2
公开(公告)日：2014-07-15
申请号：US13569014
申请日：2012-08-07
申请人： Masahiro Hikita , Tetsuzo Ueda , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
发明人： Masahiro Hikita , Tetsuzo Ueda , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
IPC分类号： H01L29/15 , H01L31/0256 , H01L29/66 , H01L21/02 , H01L29/78
CPC分类号： H01L29/7786 , H01L29/0843 , H01L29/1066 , H01L29/2003 , H01L29/432 , H01L29/66462 , H01L29/7783
摘要： An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. A source electrode and a drain electrode are provided on the undoped AlGaN layer. A pn junction is formed in a gate region by a two dimensional electron gas generated at an interface between the undoped AlGaN layer and the undoped GaN layer and the p-type GaN layer, so that a gate voltage can be increased.
摘要翻译：依次形成AlN缓冲层，未掺杂的GaN层，未掺杂的AlGaN层，p型GaN层和重掺杂的p型GaN层。栅电极与重掺杂的p型GaN层形成欧姆接触。源电极和漏电极设置在未掺杂的AlGaN层上。通过在未掺杂的AlGaN层和未掺杂的GaN层和p型GaN层之间的界面处产生的二维电子气在栅极区域中形成pn结，从而可以提高栅极电压。

23. 发明授权

US08569797B2 Field effect transistor and method of manufacturing the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US08569797B2
公开(公告)日：2013-10-29
申请号：US13185818
申请日：2011-07-19
申请人： Hidekazu Umeda , Masahiro Hikita , Tetsuzo Ueda
发明人： Hidekazu Umeda , Masahiro Hikita , Tetsuzo Ueda
IPC分类号： H01L29/80
CPC分类号： H01L29/7783 , H01L29/1066 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A field-effect transistor includes a first semiconductor layer formed on a substrate, and a second semiconductor layer. The first semiconductor layer has a containing region provided as an isolation region which contains non-conductive impurities, and a non-containing region which contains no non-conductive impurities. A first region is defined by a vicinity of a portion of the interface between the containing region and the non-containing region, the portion of the interface being below a gate electrode, the vicinity including the portion of the interface and being included in the containing region. The second semiconductor layer includes a second region which is located directly above the first region. The concentration of the non-conductive impurities of the second region is lower than that of the first region.
摘要翻译：场效应晶体管包括形成在衬底上的第一半导体层和第二半导体层。第一半导体层具有设置为包含非导电杂质的隔离区域的含有区域和不含非导电杂质的非含有区域。第一区域由容纳区域和非含有区域之间的界面的一部分的附近限定，界面的部分在栅电极下方，包括界面部分的附近包含在包含地区。第二半导体层包括位于第一区域正上方的第二区域。第二区域的非导电性杂质的浓度低于第一区域的浓度。

24. 外观设计

USD686564S1 Tire for motorcycle 有权
公开(公告)号：USD686564S1
公开(公告)日：2013-07-23
申请号：US29398046
申请日：2011-07-26
申请人： Masahiro Hikita
设计人： Masahiro Hikita

25. 外观设计

USD678180S1 Tire for motorcycle 有权
公开(公告)号：USD678180S1
公开(公告)日：2013-03-19
申请号：US29433013
申请日：2012-09-25
申请人： Masahiro Hikita
设计人： Masahiro Hikita

26. 发明授权

US08344423B2 Nitride semiconductor device and method for fabricating the same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US08344423B2
公开(公告)日：2013-01-01
申请号：US13360275
申请日：2012-01-27
申请人： Yasuhiro Uemoto , Masahiro Hikita , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Yasuhiro Uemoto , Masahiro Hikita , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L29/66
CPC分类号： H01L29/7786 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/7783
摘要： A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. A region of the third nitride semiconductor layer located below the gate electrode is formed with a control region having a p-type conductivity, and a region of the third nitride semiconductor layer located between the gate electrode and each of the source electrode and the drain electrode is formed with a high resistive region having a higher resistance than the that of the control region.
摘要翻译：氮化物半导体器件包括：第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在所述第二氮化物半导体层上的第三氮化物半导体层。位于栅电极下方的第三氮化物半导体层的区域形成有具有p型导电性的控制区域，以及位于栅电极与源电极和漏极之间的第三氮化物半导体层的区域形成有具有比控制区域更高的电阻的高电阻区域。

27. 发明授权

US07838904B2 Nitride based semiconductor device with concave gate region 有权
标题翻译：氮化物半导体器件，具有凹入栅极区域
公开(公告)号：US07838904B2
公开(公告)日：2010-11-23
申请号：US12023461
申请日：2008-01-31
申请人： Kazushi Nakazawa , Satoshi Nakazawa , Tetsuzo Ueda , Tsuyoshi Tanaka , Masahiro Hikita
发明人： Kazushi Nakazawa , Satoshi Nakazawa , Tetsuzo Ueda , Tsuyoshi Tanaka , Masahiro Hikita
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L29/1029 , H01L29/1066 , H01L29/2003 , H01L29/41766 , H01L29/42316 , H01L29/4236 , H01L29/66462
摘要： In FET, a second nitride semiconductor layer is provided on a first nitride semiconductor layer, and a source electrode and a drain electrode are each provided to have at least a portion thereof in contact with the second nitride semiconductor layer. A concave portion is formed in the upper surface of the second nitride semiconductor layer to be located between the source electrode and the drain electrode. A gate electrode is provided over the concave portion to cover the opening of the concave portion.
摘要翻译：在FET中，第二氮化物半导体层设置在第一氮化物半导体层上，并且源电极和漏电极分别设置成使其至少一部分与第二氮化物半导体层接触。在第二氮化物半导体层的上表面上形成凹部，位于源电极和漏电极之间。在所述凹部上设置有栅电极以覆盖所述凹部的开口。

28. 发明授权

US07816707B2 Field-effect transistor with nitride semiconductor and method for fabricating the same 有权
标题翻译：具有氮化物半导体的场效应晶体管及其制造方法
公开(公告)号：US07816707B2
公开(公告)日：2010-10-19
申请号：US11433734
申请日：2006-05-15
申请人： Masahiro Hikita , Tetsuzo Ueda , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
发明人： Masahiro Hikita , Tetsuzo Ueda , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
IPC分类号： H01L29/78 , H01L31/00
CPC分类号： H01L29/7786 , H01L29/0843 , H01L29/1066 , H01L29/2003 , H01L29/432 , H01L29/66462 , H01L29/7783
摘要： An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. A source electrode and a drain electrode are provided on the undoped AlGaN layer. A pn junction is formed in a gate region by a two dimensional electron gas generated at an interface between the undoped AlGaN layer and the undoped GaN layer and the p-type GaN layer, so that a gate voltage can be increased.
摘要翻译：依次形成AlN缓冲层，未掺杂的GaN层，未掺杂的AlGaN层，p型GaN层和重掺杂的p型GaN层。栅电极与重掺杂的p型GaN层形成欧姆接触。源电极和漏电极设置在未掺杂的AlGaN层上。通过在未掺杂的AlGaN层和未掺杂的GaN层和p型GaN层之间的界面处产生的二维电子气在栅极区域中形成pn结，从而可以提高栅极电压。

29. 发明授权

US07550821B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US07550821B2
公开(公告)日：2009-06-23
申请号：US11952407
申请日：2007-12-07
申请人： Daisuke Shibata , Kazushi Nakazawa , Masahiro Hikita , Yasuhiro Uemoto , Tetsuzo Ueda , Manabu Yanagihara , Tsuyoshi Tanaka
发明人： Daisuke Shibata , Kazushi Nakazawa , Masahiro Hikita , Yasuhiro Uemoto , Tetsuzo Ueda , Manabu Yanagihara , Tsuyoshi Tanaka
IPC分类号： H01L29/20
CPC分类号： H01L29/7786 , H01L21/76831 , H01L24/05 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L2224/05624 , H01L2224/05647 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/10329 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： A nitride semiconductor device includes: a substrate; a nitride semiconductor layer formed on a main surface of the substrate and having a channel region through which electrons drift in a direction parallel to the main surface; and a plurality of first electrodes and a plurality of second electrodes formed spaced apart from each other on an active region in the nitride semiconductor layer. An interlayer insulating film is formed on the nitride semiconductor layer. The interlayer insulating film has openings that respectively expose the first electrodes and has a planarized top surface. A first electrode pad is formed in a region over the active region in the interlayer insulating film and is electrically connected to the exposed first electrodes through the respective openings.
摘要翻译：氮化物半导体器件包括：衬底; 形成在所述基板的主表面上的氮化物半导体层，具有沟道区域，电子沿着与所述主表面平行的方向漂移的沟道区域; 以及在氮化物半导体层中的有源区上彼此隔开形成的多个第一电极和多个第二电极。在氮化物半导体层上形成层间绝缘膜。层间绝缘膜具有分别暴露第一电极并具有平坦化顶表面的开口。第一电极焊盘形成在层间绝缘膜中的有源区上方的区域中，并且通过相应的开口与暴露的第一电极电连接。

30. 发明申请

US20080149940A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20080149940A1
公开(公告)日：2008-06-26
申请号：US11952407
申请日：2007-12-07
申请人： Daisuke SHIBATA , Kazushi Nakazawa , Masahiro Hikita , Yasuhiro Uemoto , Tetsuzo Ueda , Manabu Yanagihara , Tsuyoshi Tanaka
发明人： Daisuke SHIBATA , Kazushi Nakazawa , Masahiro Hikita , Yasuhiro Uemoto , Tetsuzo Ueda , Manabu Yanagihara , Tsuyoshi Tanaka
IPC分类号： H01L29/205
CPC分类号： H01L29/7786 , H01L21/76831 , H01L24/05 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L2224/05624 , H01L2224/05647 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/10329 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： A nitride semiconductor device includes: a substrate; a nitride semiconductor layer formed on a main surface of the substrate and having a channel region through which electrons drift in a direction parallel to the main surface; and a plurality of first electrodes and a plurality of second electrodes formed spaced apart from each other on an active region in the nitride semiconductor layer. An interlayer insulating film is formed on the nitride semiconductor layer. The interlayer insulating film has openings that respectively expose the first electrodes and has a planarized top surface. A first electrode pad is formed in a region over the active region in the interlayer insulating film and is electrically connected to the exposed first electrodes through the respective openings.
摘要翻译：氮化物半导体器件包括：衬底; 形成在所述基板的主表面上的氮化物半导体层，具有沟道区域，电子沿着与所述主表面平行的方向漂移的沟道区域; 以及在氮化物半导体层中的有源区上彼此隔开形成的多个第一电极和多个第二电极。在氮化物半导体层上形成层间绝缘膜。层间绝缘膜具有分别暴露第一电极并具有平坦化顶表面的开口。第一电极焊盘形成在层间绝缘膜中的有源区上方的区域中，并且通过相应的开口与暴露的第一电极电连接。

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