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21. 发明授权

US06861130B2 Sintered polycrystalline gallium nitride and its production 有权
标题翻译：烧结多晶氮化镓及其生产
公开(公告)号：US06861130B2
公开(公告)日：2005-03-01
申请号：US10001575
申请日：2001-11-02
申请人： Mark P. D'Evelyn , David C. Pender , Suresh S. Vagarali , Dong-Sil Park
发明人： Mark P. D'Evelyn , David C. Pender , Suresh S. Vagarali , Dong-Sil Park
IPC分类号： C04B35/58 , B28B3/00 , C01B20060101 , C01B21/06 , C23C20060101 , C23C14/34 , H01L21/20 , H01L33/00
CPC分类号： B01J3/062 , B01J2203/0665 , B01J2203/0685
摘要： Polycrystalline gallium nitride (GaN) characterized by having the atomic fraction of gallium ranging from between about 49% to 55%, an apparent density of between about 5.5 and 6.1 g/cm3, and a Vickers hardness of above about 1 GPa. Polycrystalline GaN can be made by hot isostatic pressing (HIPing) at a temperature ranging from about 1150° C. to 1300° C. and a pressure ranging from between about 1 and 10 Kbar. Alternatively, polycrystalline GaN can be made by high pressure/high temperature (HP/HT) sintering at a temperature ranging from about 1200° to 1800° C. and a pressure ranging from about 5 to 80 Kbar.
摘要翻译：其特征在于，其原子分数为约49％至55％，表观密度为约5.5至6.1g / cm 3，维氏硬度高于约1GPa的多晶氮化镓（GaN）。多晶GaN可以通过热等静压（HIPing）在约1150℃至1300℃的温度和约1至10Kbar的压力下制备。或者，可以在约1200℃至1800℃的温度和约5至80千巴的压力下通过高压/高温（HP / HT）烧结制备多晶GaN。

22. 发明授权

US06475254B1 Functionally graded coatings for abrasive particles and use thereof in vitreous matrix composites 有权
标题翻译：用于磨料颗粒的功能梯度涂层及其在玻璃质基质复合材料中的应用
公开(公告)号：US06475254B1
公开(公告)日：2002-11-05
申请号：US09987863
申请日：2001-11-16
申请人： Aaron W. Saak , Mark P. D'Evelyn , Chung S. Kim , Michael H. Zimmerman , Steven W. Webb
发明人： Aaron W. Saak , Mark P. D'Evelyn , Chung S. Kim , Michael H. Zimmerman , Steven W. Webb
IPC分类号： C09K314
CPC分类号： B24D3/14 , C09K3/1436
摘要： Coated abrasive particle for use in vitreous bond matrices, which particle is coated with between 1 and about 50 coating layers. Each coating layer ranges in thickness from between about 0.1 and 50 microns. Each layer has the composition, MCXNYBZOW, where, M represents one or more of Ti, Si, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Re or a rare earth metal, and w, x, y, and z, each range from between 0 and 3. The outermost coating layer has a concentration of oxygen that is higher by a factor of at least about 2 than the layer in direct contact with the abrasive particle.
摘要翻译：用于玻璃质基质的涂覆磨料颗粒，该颗粒涂覆有1至约50个涂层。每个涂层的厚度范围为约0.1-50微米。每层具有组成，MCXNYBZOW，其中，M表示Ti，Si，V，Cr，Zr，Nb，Mo，Hf，Ta，W，Re或稀土金属中的一种或多种，w，x，y，和z，每个范围在0和3之间。最外涂层的氧浓度比直接与磨料颗粒接触的层高至少约2倍。

23. 发明授权

US08494017B2 Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods 有权
标题翻译：在非极性或半极性含GaN材料和方法中使用选择的晶体取向的固态激光器件
公开(公告)号：US08494017B2
公开(公告)日：2013-07-23
申请号：US13606894
申请日：2012-09-07
申请人： Rajat Sharma , Eric M. Hall , Christiane Poblenz , Mark P. D'Evelyn
发明人： Rajat Sharma , Eric M. Hall , Christiane Poblenz , Mark P. D'Evelyn
IPC分类号： H01S5/00
CPC分类号： H01S5/3202 , B82Y20/00 , H01S5/0202 , H01S5/1082 , H01S5/1085 , H01S5/2201 , H01S5/34333
摘要： An edge emitting solid state laser and method. The laser comprises at least one AlInGaN active layer on a bulk GaN substrate with a non-polar or semi-polar orientation. The edges of the laser comprise {1 1−2±6} facets. The laser has high gain, low threshold currents, capability for extended operation at high current densities, and can be manufactured with improved yield. The laser is useful for optical data storage, projection displays, and as a source for general illumination.
摘要翻译：边缘发射固态激光器和方法。激光器包括具有非极性或半极性取向的体GaN衬底上的至少一个AlInGaN有源层。激光器的边缘包括{1 1-2±6}面。激光器具有高增益，低阈值电流，能够在高电流密度下进行扩展操作，并且可以以提高的产量制造。该激光器可用于光学数据存储，投影显示器和一般照明源。

24. 发明授权

US08354679B1 Microcavity light emitting diode method of manufacture 有权
标题翻译：微腔发光二极管制造方法
公开(公告)号：US08354679B1
公开(公告)日：2013-01-15
申请号：US12569337
申请日：2009-09-29
申请人： Mark P. D'Evelyn , Rajat Sharma
发明人： Mark P. D'Evelyn , Rajat Sharma
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L33/405 , H01L24/81 , H01L33/0079 , H01L33/382 , H01L33/387 , H01L2224/16225 , H01L2224/81001
摘要： A high efficiency microcavity light emitting diode comprises a stack of AlxInyGa1-x-yN layers, where 0≦x, y, x+y≦1, with each layer having a high crystalline quality. The stack has a uniform thickness less than 6λ/n, with an active layer centered approximately (2i+1)λ/(4n) from a reflective electrical contact, where λ is the peak emission wavelength, n is the index of refraction at the peak emission wavelength, i is an integer, and each layer within the stack has a dislocation density below about 105 cm−2.
摘要翻译：高效微腔发光二极管包括一层Al x In y Ga 1-x-y N层，其中0＆lt; nlE; x，y，x + y＆nlE; 1，每层具有高结晶质量。堆叠具有小于6λ/ n的均匀厚度，其中有效层从反射电接触中心为大约（2i + 1）λ/（4n），其中λ是峰值发射波长，n是在峰值发射波长，i是整数，并且堆叠内的每个层具有低于约105cm -2的位错密度。

25. 发明授权

US08329511B2 Nitride crystal with removable surface layer and methods of manufacture 有权
公开(公告)号：US08329511B2
公开(公告)日：2012-12-11
申请号：US13425304
申请日：2012-03-20
申请人： Mark P. D'Evelyn
发明人： Mark P. D'Evelyn
IPC分类号： H01L21/50
CPC分类号： C30B29/403 , C30B7/105 , C30B23/025 , C30B25/18 , C30B33/06 , H01L24/81 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/056 , H01L2224/11 , H01L2224/81005 , H01L2224/81224 , H01L2924/00014 , H01L2924/14 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A nitride crystal or wafer with a removable surface layer comprises a high quality nitride base crystal, a release layer, and a high quality epitaxial layer. The release layer has a large optical absorption coefficient at wavelengths where the base crystal is substantially transparent and may be etched under conditions where the nitride base crystal and the high quality epitaxial layer are not. The high quality epitaxial layer may be removed from the nitride base crystal by laser liftoff or by chemical etching after deposition of at least one epitaxial device layer. The nitride crystal with a removable surface layer is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a solar cell, or for photoelectrochemical water splitting for hydrogen generation.

26. 发明授权

US08306081B1 High indium containing InGaN substrates for long wavelength optical devices 有权
标题翻译：用于长波长光学器件的高含铟InGaN衬底
公开(公告)号：US08306081B1
公开(公告)日：2012-11-06
申请号：US12785404
申请日：2010-05-21
申请人： Mathew Schmidt , Mark P. D'Evelyn
发明人： Mathew Schmidt , Mark P. D'Evelyn
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/0425 , H01S5/2009 , H01S5/2201 , H01S5/3202 , H01S5/3211
摘要： An improved optical device. The device has a gallium nitride substrate member comprising indium entities, gallium entities, and nitrogen entities. In one or more embodiments, the gallium nitride substrate member has an indium content ranging from about 1 to about 50% in weight. Preferably, the gallium nitride substrate member has a semipolar crystalline surface region or a non-polar crystalline surface region. The device has an epitaxially formed laser stripe region comprising an indium content ranging from about 1 to about 50% and formed overlying a portion of the semipolar crystalline orientation surface region or the non-polar crystalline surface region. The laser stripe region is characterized by a cavity orientation in a predefined direction according to a specific embodiment. The laser strip region has a first end and a second end including respective a first cleaved facet provided on the first end of the laser stripe region and a second cleaved facet provided on the second end of the laser stripe region.
摘要翻译：改进的光学装置。该器件具有包括铟实体，镓实体和氮实体的氮化镓衬底构件。在一个或多个实施例中，氮化镓衬底构件的铟含量为约1至约50重量％。优选地，氮化镓衬底构件具有半极性结晶表面区域或非极性结晶表面区域。该器件具有外延形成的激光条纹区域，其包含范围为约1至约50％的铟含量并且形成在半极性晶体取向表面区域或非极性晶体表面区域的一部分上。根据具体实施例，激光条纹区域的特征在于沿着预定方向的空腔取向。激光带区具有第一端和第二端，其包括设置在激光条区域的第一端上的第一切割小面和设置在激光条纹区域的第二端上的第二切割小面。

27. 发明申请

US20120199952A1 Method for Growth of Indium-Containing Nitride Films 有权
标题翻译：含铟氮化物膜生长方法
公开(公告)号：US20120199952A1
公开(公告)日：2012-08-09
申请号：US13346507
申请日：2012-01-09
申请人： Mark P. D'Evelyn , Christiane Poblenz , Michael R. Krames
发明人： Mark P. D'Evelyn , Christiane Poblenz , Michael R. Krames
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/02433 , H01L21/0237 , H01L21/02458 , H01L21/02499 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L29/2003
摘要： A method for growth of indium-containing nitride films is described, particularly a method for fabricating a gallium, indium, and nitrogen containing material. On a substrate having a surface region a material having a first indium-rich concentration is formed, followed by a second thickness of material having a first indium-poor concentration. Then a third thickness of material having a second indium-rich concentration is added to form a sandwiched structure which is thermally processed to cause formation of well-crystallized, relaxed material within a vicinity of a surface region of the sandwich structure.
摘要翻译：描述了含铟氮化物膜的生长方法，特别是制造镓，铟和含氮材料的方法。在具有表面区域的基板上形成具有第一富铟浓度的材料，然后形成具有第一贫铟浓度的第二厚度的材料。然后加入具有第二富铟浓度的第三厚度的材料以形成夹层结构，其被热处理以在夹层结构的表面区域附近形成良好结晶的松弛材料。

28. 发明申请

US20120137966A1 High Pressure Apparatus with Stackable Rings 有权
标题翻译：具有可堆叠环的高压装置
公开(公告)号：US20120137966A1
公开(公告)日：2012-06-07
申请号：US12891668
申请日：2010-09-27
申请人： Mark P. D'Evelyn , Joseph A. Kapp , John C. Lawrenson
发明人： Mark P. D'Evelyn , Joseph A. Kapp , John C. Lawrenson
IPC分类号： C30B7/10
CPC分类号： C30B7/10 , C30B7/105 , C30B35/002 , Y10T117/10 , Y10T117/1024 , Y10T117/1096
摘要： A high pressure apparatus and related methods for processing supercritical fluids is described. The apparatus includes a capsule, a heater, at least one ceramic ring with one or more scribe marks and/or cracks present. The apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. The apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.
摘要翻译：描述了用于加工超临界流体的高压装置和相关方法。该装置包括胶囊，加热器，至少一个具有一个或多个划痕和/或裂纹的陶瓷环。该装置可选地具有包含每个陶瓷环的金属套筒。该设备还具有高强度外壳，具有相关绝缘的端部法兰和电源控制系统。该装置能够分别获得0.2-2GPa和400-1200℃的压力和温度。

29. 发明授权

US08097081B2 High pressure apparatus and method for nitride crystal growth 有权
标题翻译：用于氮化物晶体生长的高压装置和方法
公开(公告)号：US08097081B2
公开(公告)日：2012-01-17
申请号：US12133364
申请日：2008-06-05
申请人： Mark P. D'Evelyn
发明人： Mark P. D'Evelyn
IPC分类号： C30B1/12
CPC分类号： C30B29/406 , B01J3/008 , B01J3/042 , B01J3/065 , B01J2203/0665 , B01J2203/067 , B01J2203/068 , B30B11/005 , C30B7/10 , C30B29/403 , Y02P20/544 , Y10T117/10 , Y10T117/1024 , Y10T117/1096
摘要： A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. IN a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.
摘要翻译：一种用于加工超临界流体的高压装置及相关方法。在具体实施例中，本装置包括胶囊，加热器，至少一个陶瓷环，但可以是多个环，任选地，存在一个或多个划痕和/或裂纹。在具体实施例中，该装置可选地具有包含每个陶瓷环的金属套筒。该设备还具有高强度外壳，具有相关绝缘的端部法兰和电源控制系统。在具体实施例中，该装置能够分别访问0.2-2GPa和400-1200℃的压力和温度。

30. 发明申请

US20120000415A1 Large Area Nitride Crystal and Method for Making It 审中-公开
标题翻译：大面积氮化物水晶及其制作方法
公开(公告)号：US20120000415A1
公开(公告)日：2012-01-05
申请号：US13160307
申请日：2011-06-14
申请人： Mark P. D'Evelyn , James S. Speck
发明人： Mark P. D'Evelyn , James S. Speck
IPC分类号： C30B25/02 , C30B23/02
CPC分类号： C30B25/18 , C30B25/02 , C30B29/403 , C30B33/06
摘要： Techniques for processing materials in supercritical fluids include processing in a capsule disposed within a high-pressure apparatus enclosure. The invention is useful for growing crystals of: GaN; AN; InN; and their alloys, namely: InGaN; AlGaN; and AlInGaN; for manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors.
摘要翻译：在超临界流体中处理材料的技术包括在设置在高压设备外壳内的胶囊中的加工。本发明可用于生长GaN的晶体; 一个; 旅店; 及其合金，即：InGaN; AlGaN; 和AlInGaN; 用于制造本体或图案化衬底，其又可用于制造光电子器件，激光器，发光二极管，太阳能电池，光电化学水分解和氢生成，光电检测器，集成电路和晶体管。

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