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    • 21. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCTION THEREOF
    • 半导体器件及其制造方法
    • US20100025725A1
    • 2010-02-04
    • US12514637
    • 2007-11-13
    • Hiroaki Tanaka
    • Hiroaki Tanaka
    • H01L29/739H01L21/331
    • H01L29/7397H01L29/1095H01L29/66348
    • A semiconductor device has a drift region (20) (third semiconductor region) of an n-type (first conductivity type); a body region (50) (second semiconductor region) of a p-type (second conductivity type) provided on the drift region (20); an emitter region (60) (first semiconductor region) of the n-type formed in the top surface of the body region (50) and separated from the drift region (20) by the body region (50); a trench (14) extending from the top surface of the emitter region (60) through the body region (50) into the drift region (20); a trench gate electrode (13) filled in the trench (14); and a semiconductor region (70) (fourth semiconductor region) of the p-type formed in contact with side faces of the trench protruding into the drift region (20). Therefore, the semiconductor device can suppress a surge voltage at turn-off, and can be produced easily.
    • 半导体器件具有n型(第一导电型)的漂移区域(20)(第三半导体区域); 设置在漂移区域(20)上的p型(第二导电型)的体区(50)(第二半导体区域); 所述n型的发射极区域(60)(第一半导体区域)形成在所述主体区域(50)的顶表面中并且通过所述主体区域(50)与所述漂移区域(20)分离。 从所述发射极区域(60)的顶表面延伸通过所述体区(50)延伸到所述漂移区域(20)中的沟槽(14)。 填充在沟槽(14)中的沟槽栅电极(13); 以及形成为与突出到漂移区域(20)中的沟槽的侧面接触的p型半导体区域(第四半导体区域)(第四半导体区域)。 因此,半导体装置能够抑制关断时的浪涌电压,能够容易地制造。
    • 27. 发明授权
    • Compact pressure sensor with high corrosion resistance and high accuracy
    • 紧凑型压力传感器,具有高耐腐蚀性和高精度
    • US07168326B2
    • 2007-01-30
    • US11079475
    • 2005-03-15
    • Inao ToyodaHiroaki TanakaIchiharu KondoMakoto Totani
    • Inao ToyodaHiroaki TanakaIchiharu KondoMakoto Totani
    • F02P5/00
    • B60C23/0408G01L9/0055G01L19/0069G01L19/0627G01L19/147G01L23/24
    • A pressure sensor mainly includes a sensor chip, a circuit chip, and a substrate. The sensor chip is configured to generate an electrical signal representative of a pressure being sensed and includes a sensing area and a plurality of contact pads. The circuit chip includes a circuit configured to process the electrical signal and a plurality of contact pads. The substrate includes a resin sheet having an opening and a plurality of conductors within the resin sheet. The substrate is joined to both the sensor chip and circuit chip so that the sensing area of the sensor chip is to be exposed to the pressure being sensed through the opening of the resin sheet, the contact pads of the sensor chip and circuit chip are electrically connected to the conductors of the substrate, and all the contact pads and conductors are hermetically embedded in the resin sheet of the substrate.
    • 压力传感器主要包括传感器芯片,电路芯片和基板。 传感器芯片被配置为产生代表正在感测的压力的电信号,并且包括感测区域和多个接触焊盘。 电路芯片包括被配置为处理电信号的电路和多个接触焊盘。 基板包括在树脂片内具有开口和多个导体的树脂片。 基片连接到传感器芯片和电路芯片上,以使传感器芯片的感测区域暴露于通过树脂片的开口感测的压力,传感器芯片和电路芯片的接触垫电气 连接到基板的导体,并且所有接触焊盘和导体都气密地嵌入在基板的树脂片中。
    • 28. 发明申请
    • Pressure sensor
    • 压力传感器
    • US20060288793A1
    • 2006-12-28
    • US11444302
    • 2006-06-01
    • Hiroaki Tanaka
    • Hiroaki Tanaka
    • G01L9/00
    • G01L19/147G01L19/0627
    • A pressure sensor for detecting a pressure and for outputting a signal based on the piezoresistance effect includes a substrate having a sensor chip on one side in a thin portion and a concave portion on another side, a piezo-resistor in the sensor chip, a pedestal being attached to the substrate and having a through hole for introducing the pressure to the sensor chip and a gel material filled in the concave portion and the through hole for protecting the sensor chip. A ratio of a diameter of the through hole to a thickness of the pedestal is substantially within a range between 1 and 3.
    • 用于检测压力并基于压阻效应输出信号的压力传感器包括:具有在薄壁一侧的传感器芯片和另一侧的凹部的基板,传感器芯片中的压电电阻器,基座 附着在基板上,并具有用于将压力引入传感器芯片的通孔和填充在凹部中的凝胶材料和用于保护传感器芯片的通孔。 通孔的直径与基座的厚度的比率基本上在1和3之间的范围内。
    • 29. 发明授权
    • Exercise load intensity evaluation device and exercise equipment
    • 运动负荷强度评估装置和运动器材
    • US07149568B2
    • 2006-12-12
    • US10614514
    • 2003-07-08
    • Kazuhiko AmanoHiroaki Tanaka
    • Kazuhiko AmanoHiroaki Tanaka
    • A61B5/02A61B5/04A61B5/0452A61B5/024
    • A61B5/02028A61B5/02438A61B5/0245A61B5/7239A61B5/7257
    • An exercise load intensity evaluation device includes a pulse wave detection section which is attached to a subject during exercise and noninvasively detects a peripheral pulse wave. An ejection duration calculation section measures ejection duration from a feature of the pulse wave (dicrotic notch, for example) which reflects the cardiac ejection duration based on the detected pulse wave. The ejection duration measured at each measurement time by the ejection duration calculation section is input to an ejection duration change detection section, and the ejection duration change detection section detects a change in the ejection duration. Exercise load intensity of the subject during exercise is evaluated based on output from the ejection duration change detection section.
    • 运动负荷强度评价装置包括在运动中附着于被检体的脉搏波检测部,并且不侵入地检测周边脉搏波。 喷射持续时间计算部分根据检测到的脉搏波测量反映心脏射血持续时间的脉搏波特征(例如,重瘤)。 由喷射持续时间计算部在每个测量时间测量的射出时间被输入到喷射持续时间变化检测部分,并且喷射持续时间变化检测部分检测喷射持续时间的变化。 基于喷射持续时间变化检测部分的输出来评估运动期间受试者的运动负荷强度。