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    • 22. 发明授权
    • Benzoxazole resin precursor, polybenzoxazole resin, resin film and semiconductor device
    • 苯并恶唑树脂前体,聚苯并恶唑树脂,树脂膜和半导体器件
    • US08337982B2
    • 2012-12-25
    • US11722625
    • 2005-06-20
    • Takashi EnokiAtsushi Izumi
    • Takashi EnokiAtsushi Izumi
    • C08G73/22
    • H01L21/02205C08G73/22H01L21/02118H01L21/312Y10T428/249991
    • A benzoxazole resin precursor comprising a first repeating unit which is obtained by the reaction of a bisaminophenol compound and a dicarboxylic acid compound, at least one of which has the diamondoid structure; a benzoxazole resin precursor further comprising a second repeating unit which is obtained by the reaction of a bisaminophenol compound having no diamondoid structure and a dicarboxylic acid compound having no diamondoid structure; a polybenzoxazole resin obtained by the ring-closing reaction with dehydration of the above benzoxazole resin precursor; a resin film constituted with the benzoxazole resin precursor or the polybenzoxazole resin. A polybenzoxazole resin and a resin film having excellent heat resistance and a small permittivity and a semiconductor device using the resin film can be obtained from the benzoxazole resin precursor.
    • 一种苯并恶唑树脂前体,其包含通过双氨基苯酚化合物和二羧酸化合物的反应获得的第一重复单元,其中至少一个具有金刚石结构; 进一步包含通过不具有金刚石结构的二氨基苯酚化合物与不具有类金刚石结构的二羧酸化合物的反应获得的第二重复单元的苯并恶唑树脂前体; 通过脱水上述苯并恶唑树脂前体进行闭环反应得到的聚苯并恶唑树脂; 由苯并恶唑树脂前体或聚苯并恶唑树脂构成的树脂膜。 可以从苯并恶唑树脂前体获得聚苯并恶唑树脂和具有优异的耐热性和小介电常数的树脂膜和使用树脂膜的半导体器件。
    • 23. 发明授权
    • Resin composition, polyimide resin composition, polybenzoxazole resin composition, varnish, resin film and semiconductor device using the same
    • 树脂组合物,聚酰亚胺树脂组合物,聚苯并恶唑树脂组合物,清漆,树脂膜和使用其的半导体器件
    • US07652125B2
    • 2010-01-26
    • US11663854
    • 2005-09-29
    • Takashi EnokiAtsushi IzumiYumiko YamamotoTakahiro Harada
    • Takashi EnokiAtsushi IzumiYumiko YamamotoTakahiro Harada
    • C08G65/40C08G65/38
    • C08L79/08C08L79/04C09D179/04C09D179/08H01L51/052
    • A resin composition having high heat resistance and low dielectric constant after heat treatment, a varnish thereof and a semiconductor device using the same are provided by a resin composition including a compound having a structure represented by the general formula (1): wherein, “Ar” is an aromatic group; “a” is 0 or 1; R11 is an organic group having one or more carbon atoms and at least one is a group having an alicyclic structure; when “q” is an integer of 2 or more, R11s may be the same or different from each other; at least one of R1 to R5 and at least one of R6 to R10 on respective benzene rings are Ar-binding sites or R11-binding sites and the others of R1 to R5 and R6 to R10 are each hydrogen, a group having an alicyclic structure, an organic group having 1 to 10 carbon atoms, a hydroxyl group or a carboxyl group; when “a” is 0, at least one of R1 to R5 and R6 to R10 is a group having an alicyclic structure; “q” is an integer of 1 or more; and “X” is any of —O—, —NHCO—, —COHN—, —COO— and —OCO—.
    • 通过具有由通式(1)表示的结构的化合物的树脂组合物提供热处理后的耐热性和介电常数低的树脂组合物,其清漆和使用该树脂组合物的半导体装置:其中“Ar “是一个芳香族群; “a”为0或1; R11是具有一个或多个碳原子的有机基团,并且至少一个是具有脂环结构的基团; 当“q”为2以上的整数时,R 11可以相同也可以不同, R 1〜R 5中的至少一个和各苯环上的R 6〜R 10中的至少一个为Ar结合位点或R 11结合位点,其中R 1〜R 5,R 6〜R 10为氢,具有脂环结构 具有1-10个碳原子的有机基团,羟基或羧基; 当“a”为0时,R 1至R 5和R 6至R 10中的至少一个为具有脂环结构的基团; “q”为1以上的整数, “X”是-O-,-NHCO-,-COHN-,-COO-和-OCO-中的任何一个。
    • 24. 发明申请
    • Benzoxazole Resin Precursor, Polybenzoxazole Resin, Resin Film And Semiconductor Device
    • 苯并恶唑树脂前体,聚苯并恶唑树脂,树脂膜和半导体器件
    • US20080206548A1
    • 2008-08-28
    • US11722625
    • 2005-06-20
    • Takashi EnokiAtsushi Izumi
    • Takashi EnokiAtsushi Izumi
    • B32B27/00C08G73/22
    • H01L21/02205C08G73/22H01L21/02118H01L21/312Y10T428/249991
    • A benzoxazole resin precursor comprising a first repeating unit which is obtained by the reaction of a bisaminophenol compound and a dicarboxylic acid compound, at least one of which has the diamondoid structure; a benzoxazole resin precursor further comprising a second repeating unit which is obtained by the reaction of a bisaminophenol compound having no diamondoid structure and a dicarboxylic acid compound having no diamondoid structure; a polybenzoxazole resin obtained by the ring-closing reaction with dehydration of the above benzoxazole resin precursor; a resin film constituted with the benzoxazole resin precursor or the polybenzoxazole resin. A polybenzoxazole resin and a resin film having excellent heat resistance and a small permittivity and a semiconductor device using the resin film can be obtained from the benzoxazole resin precursor.
    • 一种苯并恶唑树脂前体,其包含通过双氨基苯酚化合物和二羧酸化合物的反应获得的第一重复单元,其中至少一个具有金刚石结构; 进一步包含通过不具有金刚石结构的二氨基苯酚化合物与不具有类金刚石结构的二羧酸化合物的反应获得的第二重复单元的苯并恶唑树脂前体; 通过脱水上述苯并恶唑树脂前体进行闭环反应得到的聚苯并恶唑树脂; 由苯并恶唑树脂前体或聚苯并恶唑树脂构成的树脂膜。 可以从苯并恶唑树脂前体获得聚苯并恶唑树脂和具有优异的耐热性和小介电常数的树脂膜和使用树脂膜的半导体器件。
    • 25. 发明申请
    • Distortion compensation table creation method and distortion compensation method
    • 失真补偿表创建方法和失真补偿方法
    • US20060083330A1
    • 2006-04-20
    • US10537909
    • 2003-12-17
    • Hideo NagataTakashi Enoki
    • Hideo NagataTakashi Enoki
    • H04L25/49
    • H03F1/3294H03F1/3223H03F3/24H04B2001/0441
    • Fundamentals and IM waves comprising distortion signals are detected by vector measurement from an amplified baseband signal. Detected IM waves are related to power and frequency and plotted on the frequency axis. IM waves related to power and frequency are subjected to IFFT processing, and thereby converted so as to be related to time and power. Amplitude and phase components of IM waves subjected to IFFT processing are found. Compensation signal generation information is generated by relating a distortion compensation signal that has amplitude components of inverse amplitude to the amplitude components of IM waves and phase components of inverse phase to the phase components of IM waves to power, and creating a table by storing the generated compensation signal generation information in a compensation table. By this means, the circuit configuration can be made small and simple, processing can be simplified and speeded up, and distortion components can be suppressed with high precision.
    • 通过来自放大基带信号的矢量测量来检测包括失真信号的基波和IM波。 检测到的IM波与功率和频率有关,并绘制在频率轴上。 与功率和频率相关的IM波进行IFFT处理,从而被转换为与时间和功率有关。 发现经受IFFT处理的IM波的幅度和相位分量。 通过将具有逆振幅的振幅分量的失真补偿信号与IM波的振幅分量和反相的相位分量相关联,使IM波的相位分量发生功率而产生补偿信号生成信息,并通过存储生成的 补偿表中的补偿信号生成信息。 通过这种方式,可以使电路结构小而简单,可以简化和加速处理,并可以高精度地抑制失真分量。
    • 26. 发明申请
    • Distortion compensation device and distortion compensation method
    • 失真补偿装置和失真补偿方法
    • US20060029154A1
    • 2006-02-09
    • US10537799
    • 2003-12-16
    • Hideo NagataTakashi Enoki
    • Hideo NagataTakashi Enoki
    • H04L25/03
    • H04B1/0475H03F1/3223H03F3/24H04B2001/0441
    • A compensation data table 304 generates baseband signal nonlinear characteristic information. A determination section 305 determines from measured power whether power is on an upward trend or on a downward trend. An IM unbalance compensation computation section 306 generates an unbalance IM characteristic so that an amplitude component and phase component when power is identical differ when power is on an upward trend and when power is on a downward trend, and generates a compensation signal of a compensation characteristic that has an amplitude component and phase component that are symmetrical with the generated unbalance IM characteristic with respect to amplitude component and phase component fixed values when there is a linear characteristic. A complex multiplication section 307 combines the baseband signal with the compensation signal. An amplifier 312 amplifies the baseband signal and also suppresses distortion components generated during amplification by means of the compensation signal. By this means, distortion components in a state of lower/upper unbalance can be suppressed with high precision.
    • 补偿数据表304生成基带信号非线性特性信息。 确定部分305根据测量的功率确定功率是处于上升趋势还是处于下降趋势。 IM不平衡补偿计算部分306产生不平衡IM特性,使得当功率相同时的振幅分量和相位分量在功率处于上升趋势时和当电源处于下降趋势时不同,并且产生补偿特性的补偿信号 其具有当存在线性特性时相对于振幅分量和相位分量固定值与产生的不平衡IM特性对称的振幅分量和相位分量。 复数乘法部307将基带信号与补偿信号组合。 放大器312放大基带信号,并且还通过补偿信号抑制放大期间产生的失真分量。 通过这种方式,可以高精度地抑制处于较低/不平衡状态的失真分量。
    • 29. 发明授权
    • Receiving circuit for a portable telephone set
    • 便携式电话机的接收电路
    • US5794134A
    • 1998-08-11
    • US675984
    • 1996-07-09
    • Takashi EnokiFujio Sasaki
    • Takashi EnokiFujio Sasaki
    • H04B1/16H04B1/10
    • H04B1/1036
    • An unnecessary wave suppressing means suppresses unnecessary waves included in a reception high frequency signal in a frequency band that is changed in accordance with a switching signal. The unnecessary wave suppressing means changes the pass band by inserting a notch into a pass band at a range where a signal is to be suppressed, changing the pass band width so as to exclude a suppression band, retaining a plurality of narrow pass bands for respective frequency bands used and switching among those narrow pass bands in accordance with a frequency band of a receiving signal, or continuously changing the pass band by using a tuning filter.
    • 不必要的波形抑制装置抑制根据切换信号而改变的频带中的接收高频信号中包含的不必要的波。 不需要的波形抑制装置通过在要抑制信号的范围内将陷波插入通带来改变通带,改变通带宽度以排除抑制频带,保持多个窄带通 使用频带,并根据接收信号的频带在这些窄通带之间切换,或者通过使用调谐滤波器连续地改变通带。