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21. 发明申请

US20110241141A1 Magnetic Element Having Low Saturation Magnetization 有权
标题翻译：具有低饱和磁化的磁性元件
公开(公告)号：US20110241141A1
公开(公告)日：2011-10-06
申请号：US13160438
申请日：2011-06-14
申请人： Hide Nagai , Zhitao Diao , Yiming Huai
发明人： Hide Nagai , Zhitao Diao , Yiming Huai
IPC分类号： H01L29/82
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer. The free layer is includes low saturation magnetization materials.
摘要翻译：描述包括磁性元件的磁性装置。磁性元件包括具有固定层磁化的固定层，非磁性的间隔层和具有自由层磁化的自由层。当超过阈值的写入电流通过第一自由层时，由于自旋转移，自由层是可变的。自由层包括低饱和磁化材料。

22. 发明授权

US07982275B2 Magnetic element having low saturation magnetization 有权
标题翻译：具有低饱和磁化强度的磁性元件
公开(公告)号：US07982275B2
公开(公告)日：2011-07-19
申请号：US11843496
申请日：2007-08-22
申请人： Hide Nagai , Zhitao Diao , Yiming Huai
发明人： Hide Nagai , Zhitao Diao , Yiming Huai
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer. The free layer is includes low saturation magnetization materials.
摘要翻译：描述包括磁性元件的磁性装置。磁性元件包括具有固定层磁化的固定层，非磁性的间隔层和具有自由层磁化的自由层。当超过阈值的写入电流通过第一自由层时，由于自旋转移，自由层是可变的。自由层包括低饱和磁化材料。

23. 发明授权

US07738287B2 Method and system for providing field biased magnetic memory devices 有权
标题翻译：用于提供场偏置磁存储器件的方法和系统
公开(公告)号：US07738287B2
公开(公告)日：2010-06-15
申请号：US11692090
申请日：2007-03-27
申请人： Zhitao Diao , Lien-Chang Wang , Yiming Huai
发明人： Zhitao Diao , Lien-Chang Wang , Yiming Huai
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , Y10T29/49002
摘要： A method and system for providing a magnetic memory is disclosed. The method and system include providing a plurality of magnetic storage cells in an array, a plurality of bit lines, and at least one bias structure. Each of the plurality of magnetic storage cells includes at least one magnetic element having an easy axis and being programmable by at least one write current driven through the magnetic element. The plurality of bit lines corresponds to the plurality of magnetic storage cells. The at least one bias structure is magnetically coupled with the at least one magnetic element in each of the plurality of magnetic storage cells. The at least one bias structure provides a bias field in a direction greater than zero degrees and less than one hundred eighty degrees from the easy axis.
摘要翻译：公开了一种用于提供磁存储器的方法和系统。该方法和系统包括在阵列，多个位线以及至少一个偏置结构中提供多个磁存储单元。多个磁存储单元中的每一个包括至少一个具有容易轴的磁性元件，并且可由通过磁性元件驱动的至少一个写入电流来编程。多个位线对应于多个磁存储单元。所述至少一个偏置结构与所述多个磁存储单元中的每一个中的所述至少一个磁性元件磁耦合。所述至少一个偏置结构在大于零度且小于离开易轴的百分之八十度的方向上提供偏置场。

24. 发明授权

US07663848B1 Magnetic memories utilizing a magnetic element having an engineered free layer 有权
标题翻译：利用具有工程自由层的磁性元件的磁存储器
公开(公告)号：US07663848B1
公开(公告)日：2010-02-16
申请号：US11523872
申请日：2006-09-20
申请人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
IPC分类号： G11B5/127
CPC分类号： H01F10/3254 , B82Y25/00 , G11B5/3906 , G11C11/161 , G11C11/1675 , H01F10/325 , H01F10/3263 , H01F10/3272 , H01L43/08
摘要： A method and system for providing a magnetic memory are described. The method and system include providing a plurality of magnetic storage cells. Each of the magnetic storage cells includes at least one magnetic element. The magnetic element(s) includes a pinned layer, a barrier layer that is a crystalline insulator and has a first crystalline orientation, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first and second ferromagnetic layer. The barrier layer resides between the pinned and free layers. The first ferromagnetic layer resides between the barrier layer and the intermediate layer and is ferromagnetically coupled with the second ferromagnetic layer. The intermediate layer is configured such that the first ferromagnetic layer has the first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer. The magnetic element is configured to allow the free layer to be switched utilizing spin transfer when a write current is passed through the magnetic element.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供多个磁存储单元。每个磁存储单元包括至少一个磁性元件。磁性元件包括钉扎层，作为结晶绝缘体并具有第一结晶取向的阻挡层和自由层。自由层包括第一铁磁层，第二铁磁层和第一和第二铁磁层之间的中间层。阻挡层位于固定层和自由层之间。第一铁磁层位于阻挡层和中间层之间，并且与第二铁磁层铁磁耦合。中间层被配置为使得第一铁磁层具有第一晶体取向，而第二铁磁层具有不同于第一铁磁层的第二晶体取向。磁性元件配置成当写入电流通过磁性元件时允许利用自旋转移来切换自由层。

25. 发明申请

US20070159734A1 SPIN TRANSFER MAGNETIC ELEMENT HAVING LOW SATURATION MAGNETIZATION FREE LAYERS 有权
标题翻译：具有低饱和磁化自由层的旋转磁体元件
公开(公告)号：US20070159734A1
公开(公告)日：2007-07-12
申请号：US11685723
申请日：2007-03-13
申请人： Paul Nguyen , Yiming Huai , Zhitao Diao , Frank Albert
发明人： Paul Nguyen , Yiming Huai , Zhitao Diao , Frank Albert
IPC分类号： G11B5/127
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/16 , H01F10/3263 , H01F10/3272 , H01F41/303
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定，非磁性间隔物和自由层。间隔层位于固定层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。磁性元件还可以包括阻挡层，第二被钉扎层。或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。在一个方面，自由层包括用非磁性材料稀释的铁磁材料和/或亚铁磁掺杂以提供低的饱和磁化强度。

26. 发明授权

US08476723B2 Magnetic element having low saturation magnetization 有权
标题翻译：具有低饱和磁化强度的磁性元件
公开(公告)号：US08476723B2
公开(公告)日：2013-07-02
申请号：US13160438
申请日：2011-06-14
申请人： Hide Nagai , Zhitao Diao , Yiming Huai
发明人： Hide Nagai , Zhitao Diao , Yiming Huai
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer. The free layer is includes low saturation magnetization materials.
摘要翻译：描述包括磁性元件的磁性装置。磁性元件包括具有固定层磁化的固定层，非磁性的间隔层和具有自由层磁化的自由层。当超过阈值的写入电流通过第一自由层时，由于自旋转移，自由层是可变的。自由层包括低饱和磁化材料。

27. 发明授权

US07859034B2 Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer 有权
标题翻译：具有邻近自由铁磁层的氧化物反铁磁层的磁性器件
公开(公告)号：US07859034B2
公开(公告)日：2010-12-28
申请号：US12425370
申请日：2009-04-16
申请人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909 , G11C11/161 , H01F10/3218 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3268 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers to switch the magnetization of the free ferromagnetic layer.
摘要翻译：诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性领域。具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。可以通过驱动垂直于层的写入电流来转换自由铁磁层的磁化，使用自旋转移感应开关对这种多层结构进行编程。

28. 发明授权

US07851840B2 Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier 有权
标题翻译：基于利用多层屏障的磁隧道结的装置和电路
公开(公告)号：US07851840B2
公开(公告)日：2010-12-14
申请号：US11520868
申请日：2006-09-13
申请人： Zhitao Diao , Yiming Huai
发明人： Zhitao Diao , Yiming Huai
IPC分类号： H01L29/96 , H01L43/08
CPC分类号： H01L43/08 , G11C11/16
摘要： Devices having magnetic or magnetoresistive tunnel junctions (MTJS) have a multilayer insulator barrier layer to produce balanced write switching currents in the device circuitry, or to produce the magnetic devices with balanced critical spin currents required for spin torque transfer induced switching of the magnetization, or both for the MTJs under both the forward and reversed bias directions.
摘要翻译：具有磁或磁阻隧道结（MTJS）的器件具有多层绝缘体阻挡层，以在器件电路中产生平衡的写入开关电流，或者产生具有自旋转矩传递感应开关磁化所需的平衡临界自旋电流的磁性器件，或对于正向和反向偏置方向的MTJ都是这样。

29. 发明授权

US07777261B2 Magnetic device having stabilized free ferromagnetic layer 有权
标题翻译：具有稳定的自由铁磁层的磁性装置
公开(公告)号：US07777261B2
公开(公告)日：2010-08-17
申请号：US11232356
申请日：2005-09-20
申请人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
IPC分类号： H01L29/94
CPC分类号： H01L43/08 , B82Y25/00 , G11B5/3983 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3268 , H01L27/228 , H01L43/10
摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers.
摘要翻译：诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性领域。具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。可以通过驱动垂直于层的写入电流，使用自旋转移感应开关对这种多层结构进行编程。

30. 发明申请

US20100072524A1 Magnetic Devices Having Oxide Antiferromagnetic Layer Next To Free Ferromagnetic Layer 有权
标题翻译：具有接近自由铁磁层的氧化物反铁磁层的磁性器件
公开(公告)号：US20100072524A1
公开(公告)日：2010-03-25
申请号：US12425370
申请日：2009-04-16
申请人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909 , G11C11/161 , H01F10/3218 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3268 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers to switch the magnetization of the free ferromagnetic layer.
摘要翻译：诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性领域。具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。可以通过驱动垂直于层的写入电流来转换自由铁磁层的磁化，使用自旋转移感应开关对这种多层结构进行编程。

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