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    • 26. 发明授权
    • Method, device and system for automatic device failure recovery
    • 自动设备故障恢复的方法,设备和系统
    • US08375252B2
    • 2013-02-12
    • US11957547
    • 2007-12-17
    • Meng DiaoLei LiBo YangZhiyong Zhang
    • Meng DiaoLei LiBo YangZhiyong Zhang
    • G06F11/00
    • G06F9/4401H04L41/0672H04L67/125H04L67/34H04L69/40
    • Embodiments of the present invention provide a method, devices and a system for automatic device failure recovery. The method mainly includes: sending a recovery request message to a management device or a server; obtaining a program file used for failure recovery from the management device or the server; and performing the failure recovery by using the program file. With the implemention of the present invention, a device may recover from a failure fully automatically. No intervention of a local user is needed in the whole failure recovery process. Therefore, the implementation of the recovery is more convenient and more flexible. Meanwhile, the failure emergency recovery of the device may be implemented automatically, which makes the failure recovery processing safer and more reliable, and effectively reduces the cost of the local maintenance of a device.
    • 本发明的实施例提供一种用于自动装置故障恢复的方法,装置和系统。 该方法主要包括:向管理设备或服务器发送恢复请求消息; 从管理设备或服务器获取用于故障恢复的程序文件; 并通过使用程序文件执行故障恢复。 随着本发明的实施,设备可以完全自动地从故障中恢复。 在整个故障恢复过程中不需要本地用户的干预。 因此,恢复的实施更加方便和灵活。 同时,可以自动实现设备的故障应急恢复,使故障恢复处理更加安全可靠,有效降低设备本地维护成本。
    • 28. 发明授权
    • Self-aligned nano field-effect transistor and its fabrication
    • 自对准纳米场效应晶体管及其制造
    • US08063451B2
    • 2011-11-22
    • US12571453
    • 2009-10-01
    • Zhiyong ZhangLianmao PengSheng WangXuelei LiangQing Chen
    • Zhiyong ZhangLianmao PengSheng WangXuelei LiangQing Chen
    • H01L29/72
    • H01L29/0665B82Y10/00H01L29/0673H01L51/0048H01L51/0541Y10S977/938
    • Our invention discloses a self-aligned-gate structure for nano FET and its fabrication method. One dimension semiconductor material is used as conductive channel, whose two terminals are source and drain electrodes. Gate dielectric grown by ALD covers the area between source electrode and drain electrode, opposite sidewalls of source electrode and drain electrode, and part of upper source electrode and drain electrode. Gate electrode is deposited on gate dielectric by evaporation or sputtering. Total thickness of gate dielectric and electrode must less than source electrode or drain electrode. Gate electrode between source electrode and drain electrode is electrically separated from source and drain electrode by gate dielectric. The fabrication process of this self-aligned structure is simple, stable, and has high degree of freedom. Nearly the whole conductive channel between source electrode and drain electrode is covered by gate electrode, so the control efficiency of the gate over the conductive channel, described as transconductance, can be greatly enhanced. Additionally, there is no restriction on material of gate dielectric or electrode, so the devices' threshold voltage can be adjusted to satisfy the requirements of large scale integrated circuit.
    • 我们的发明公开了一种用于纳米FET的自对准栅极结构及其制造方法。 一维半导体材料用作导电通道,其两个端子是源极和漏极。 由ALD生长的栅极电介质覆盖源极和漏极之间的区域,源极和漏极的相对侧壁以及上部源极和漏极的一部分。 栅电极通过蒸发或溅射沉积在栅极电介质上。 栅极电介质和电极的总厚度必须小于源电极或漏电极。 源电极和漏电极之间的栅极电极通过栅极电介质与源极和漏极电气分离。 该自对准结构的制造工艺简单,稳定,具有高自由度。 源电极和漏电极之间的几乎整个导电通道被栅电极覆盖,因此可以大大提高导电沟道上栅极的控制效率,如跨导。 另外,对栅极电介质或电极的材料没有限制,因此可以调节器件的阈值电压以满足大规模集成电路的要求。