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21. 发明授权

US06542047B2 Ninety degree splitter with at least three windings on a single core 失效
标题翻译： 90度分离器，在单个芯上至少有三个绕组
公开(公告)号：US06542047B2
公开(公告)日：2003-04-01
申请号：US09729380
申请日：2000-12-05
申请人： Lu Chen , Radha Setty , Daxiong Ji
发明人： Lu Chen , Radha Setty , Daxiong Ji
IPC分类号： H01P516
CPC分类号： H03H7/19
摘要： A 90 degree splitter which covers a wide frequency range of 1500 to 2500 Mhz in a small footprint of only 0.2 inches by 0.2 inches. This device does not use any capacitors which greatly simplifies the construction and lowers the cost in comparison to conventional splitters.
摘要翻译： 90度分离器，覆盖范围广泛的1500至2500 Mhz，占地面积仅为0.2英寸×0.2英寸。该装置不使用任何电容器，与传统的分路器相比，这种电容器大大简化了结构并降低了成本。

22. 发明授权

US06320427B1 High-speed, low-power continuous-time CMOS current comparator 有权
标题翻译：高速，低功耗连续CMOS电流比较器
公开(公告)号：US06320427B1
公开(公告)日：2001-11-20
申请号：US09689567
申请日：2000-10-11
申请人： Bingxue Shi , Lu Chen
发明人： Bingxue Shi , Lu Chen
IPC分类号： H03K522
CPC分类号： H03K5/2472 , H03K5/086
摘要： A CMOS current comparator featuring shortened response delay times lower power consumption, smaller area and enhanced process robustness. The current comparator is comprised of a CMOS complementary amplifier, two resistive-load amplifiers and two CMOS inverters. The CMOS complementary amplifier receives an input current from an input node which generates an output voltage at a corresponding output node. The CMOS complementary amplifier is comprised of an N-type metal oxide semiconductor field effect transistor (NMOS) and a P-type metal oxide semiconductor field effect transistor (PMOS) connected in series. Control gates on both the NMOS and PMOS are connected to form the input node. NMOS and PMOS drain electrodes are also coupled to the output node. The CMOS complementary amplifier further has a resistive feedback circuit which is connected between the input and output nodes. The two resistive-load amplifiers are connected in cascade form to receive and amplify output voltage from the CMOS complementary amplifier. The result being a correspondingly output of amplified voltage. The two CMOS inverters are also connected in cascade form to receive the amplified voltage and output corresponding rail-to-rail result signal.
摘要翻译：具有缩短响应延迟的CMOS电流比较器，功耗更低，面积更小，工艺稳定性更强。电流比较器由CMOS互补放大器，两个电阻负载放大器和两个CMOS反相器组成。 CMOS互补放大器从输入节点接收输入电流，其在相应的输出节点处产生输出电压。 CMOS互补放大器由串联连接的N型金属氧化物半导体场效应晶体管（NMOS）和P型金属氧化物半导体场效应晶体管（PMOS）构成。连接NMOS和PMOS两端的控制栅极，形成输入节点。 NMOS和PMOS漏电极也耦合到输出节点。 CMOS互补放大器还具有连接在输入和输出节点之间的电阻反馈电路。两个电阻负载放大器以级联形式连接，以接收和放大CMOS互补放大器的输出电压。结果是放大电压的相应输出。两个CMOS反相器也以级联形式连接以接收放大的电压并输出相应的轨至轨结果信号。

23. 发明申请

US20150006623A1 Method and System for Transmitting Network File 审中-公开
标题翻译：传输网络文件的方法和系统
公开(公告)号：US20150006623A1
公开(公告)日：2015-01-01
申请号：US14361018
申请日：2012-03-15
申请人： Lu Chen , Sheng Zhong
发明人： Lu Chen , Sheng Zhong
IPC分类号： H04L29/06 , H04L29/08
CPC分类号： H04L67/42 , H04L67/02 , H04L67/06 , H04L69/04
摘要： Disclosed are a method and system for transmitting a network file. The method includes: a client sends to a server a network file request message carrying a first network file identifier, wherein the network file request message is used by the client to request to obtain the current content in the network file from the server, and the first network file identifier is used for indicating the content in the network file obtained by the client; the client receives a differential file from the server, wherein the differential file stores the difference between the current content in the network file and the content in the network file obtained by the client; and the client combines the differential file with the content in the network file obtained by the client to obtain the current content in the network file. The disclosure reduces the transmission traffic and shortens the transmission time.
摘要翻译：公开了一种用于发送网络文件的方法和系统。该方法包括：客户端向服务器发送携带第一网络文件标识符的网络文件请求消息，其中客户端使用网络文件请求消息来请求从服务器获取网络文件中的当前内容，并且第一网络文件标识符用于指示由客户端获取的网络文件中的内容; 客户端从服务器接收差分文件，其中差分文件存储网络文件中的当前内容与由客户端获取的网络文件中的内容之间的差异; 并且客户端将差分文件与客户端获取的网络文件中的内容相结合，以获取网络文件中的当前内容。本公开减少了传输流量并缩短了传输时间。

24. 发明授权

US08778783B2 Methods for improved growth of group III nitride buffer layers 有权
标题翻译：改善III族氮化物缓冲层生长的方法
公开(公告)号：US08778783B2
公开(公告)日：2014-07-15
申请号：US13469050
申请日：2012-05-10
申请人： Yuriy Melnik , Lu Chen , Hidehiro Kojiri
发明人： Yuriy Melnik , Lu Chen , Hidehiro Kojiri
IPC分类号： H01L21/20 , H01L21/02
CPC分类号： H01L21/02304 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/872
摘要： Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).
摘要翻译：公开了用于生长具有先进的多缓冲层技术的高结晶质量III族氮化物外延层的方法。在一个实施例中，一种方法包括在氢化物气相外延处理系统的处理室中形成在合适的衬底上含有铝的III族氮化物缓冲层。在沉积缓冲层期间，卤化氢或卤素气体流入生长区以抑制均匀的颗粒形成。可以使用含有铝的低温缓冲液（例如AlN，AlGaN）和含有铝的高温缓冲液（例如AlN，AlGaN）的一些组合来改善随后生长的III族氮化物外延层的晶体质量和形态。缓冲液可以沉积在衬底上，或者沉积在另一缓冲液的表面上。附加的缓冲层可以作为III族氮化物层（例如，GaN，AlGaN，AlN）中的中间层添加。

25. 发明申请

US20120295428A1 METHODS FOR PRETREATMENT OF GROUP III-NITRIDE DEPOSITIONS 有权
标题翻译：用于预处理III-NITRIDE沉积物的方法
公开(公告)号：US20120295428A1
公开(公告)日：2012-11-22
申请号：US13469048
申请日：2012-05-10
申请人： Yuriy Melnik , Lu Chen , Hidehiro Kojiri
发明人： Yuriy Melnik , Lu Chen , Hidehiro Kojiri
IPC分类号： H01L21/311
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/02458 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： Embodiments of the present disclosure relate to methods for pretreatment of substrates and group III-nitride layers for manufacturing devices such as light emitting diodes (LEDs), laser diodes (LDs) or power electronic devices. One embodiment of the present disclosure provides a method including providing one or more substrates having an aluminum containing surface in a processing chamber and exposing a surface of each of the one or more substrates having an aluminum containing surface to a pretreatment gas mixture to form a pretreated surface. The pretreatment gas mixture includes ammonia (NH3), an aluminum halide gas (e.g., AlCl3, AlCl) and an etchant containing gas that includes a halogen gas (e.g., Cl2) or hydrogen halide gas (e.g., HCl).
摘要翻译：本公开的实施例涉及用于制造诸如发光二极管（LED），激光二极管（LD）或功率电子器件的器件的衬底和III族氮化物层的预处理的方法。本公开的一个实施方案提供了一种方法，包括在处理室中提供具有含铝表面的一个或多个基材，并将具有含铝表面的一个或多个基材中的每一个的表面暴露于预处理气体混合物以形成预处理表面。预处理气体混合物包括氨（NH 3），卤化铝气体（例如AlCl 3，AlCl）和含有卤素气体（例如Cl 2）或卤化氢气体（例如HCl）的含蚀刻剂的气体。

26. 发明申请

US20120291698A1 METHODS FOR IMPROVED GROWTH OF GROUP III NITRIDE SEMICONDUCTOR COMPOUNDS 有权
标题翻译：改善III族氮化物半导体化合物生长的方法
公开(公告)号：US20120291698A1
公开(公告)日：2012-11-22
申请号：US13469045
申请日：2012-05-10
申请人： Yuriy Melnik , Lu Chen , Hidehiro Kojiri
发明人： Yuriy Melnik , Lu Chen , Hidehiro Kojiri
IPC分类号： C30B25/14 , C30B25/18
CPC分类号： C30B25/14 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/40 , C30B29/403 , C30B29/406
摘要： Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.
摘要翻译：公开了采用先进缓冲层技术生长III族氮化物半导体化合物的方法。在一个实施例中，一种方法包括在氢化物气相外延处理系统的处理室中提供合适的衬底。该方法包括通过使氨气流入处理室的生长区而形成AlN缓冲层，将含卤化铝的前体流过生长区，同时将另外的卤化氢或卤素气体流入生长区的生长区处理室。在缓冲层沉积期间流入生长区的附加卤化氢或卤素气体抑制均匀的AlN颗粒形成。卤化氢或卤素气体可以持续流动一段时间，同时关闭含卤化铝的前体的流动。

27. 发明申请

US20120235116A1 LIGHT EMITTING DIODE WITH ENHANCED QUANTUM EFFICIENCY AND METHOD OF FABRICATION 审中-公开
标题翻译：具有增强量子效率的发光二极管和制造方法
公开(公告)号：US20120235116A1
公开(公告)日：2012-09-20
申请号：US13387713
申请日：2010-07-30
申请人： Jie Su , Olga Kryliouk , Yuriy Melnik , Hidehiro Kojiri , Lu Chen , Tetsuya Ishikawa
发明人： Jie Su , Olga Kryliouk , Yuriy Melnik , Hidehiro Kojiri , Lu Chen , Tetsuya Ishikawa
IPC分类号： H01L33/04 , C30B25/02 , H01B1/02 , C30B25/08
CPC分类号： H01L33/06 , H01L33/04 , H01L33/325
摘要： One embodiment of a quantum well structure comprises an active region including active layers that comprise quantum wells and barrier layers wherein some or all of the active layers are p type doped. P type doping some or all of the active layers improves the quantum efficiency of III-V compound semiconductor light emitting diodes by locating the position of the P-N junction in the active region of the device thereby enabling the dominant radiative recombination to occur within the active region. In one embodiment, the quantum well structure is fabricated in a cluster tool having a hydride vapor phase epitaxial (HVPE) deposition chamber with a eutectic source alloy. In one embodiment, the indium gallium nitride (InGaN) layer and the magnesium doped gallium nitride (Mg—GaN) or magnesium doped aluminum gallium nitride (Mg—AlGaN) layer are grown in separate chambers by a cluster tool to avoid indium and magnesium cross contamination. Doping of group III-nitrides by hydride vapor phase epitaxy using group III-metal eutectics is also described. In one embodiment, a source is provided for HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the source including a liquid phase mechanical (eutectic) mixture with a group III species. In one embodiment, a method is provided for performing HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the method including using a liquid phase mechanical (eutectic) mixture with a group III species.
摘要翻译：量子阱结构的一个实施例包括有源区，包括有源层，其包括量子阱和阻挡层，其中一些或全部有源层是p型掺杂的。通过将PN结的位置定位在器件的有源区域中，P型掺杂部分或全部有源层提高了III-V族化合物半导体发光二极管的量子效率，从而能够在主动区域内发生主要的辐射复合。在一个实施例中，量子阱结构在具有共晶源合金的氢化物气相外延（HVPE）沉积室的簇工具中制造。在一个实施例中，氮化铟镓（InGaN）层和掺杂镁的氮化镓（Mg-GaN）或镁掺杂的氮化铝镓（Mg-AlGaN）层通过簇工具在分开的室中生长以避免铟和镁的交叉污染。还描述了使用III族金属共晶体通过氢化物气相外延掺杂的III族氮化物。在一个实施例中，提供了用于HVPE沉积p型或n型III族氮化物外延膜的源，该源包括具有III族的液相机械（共晶）混合物。在一个实施例中，提供了一种用于执行p型或n型III族氮化物外延膜的HVPE沉积的方法，该方法包括使用具有III族物质的液相机械（共晶）混合物。

28. 发明申请

US20110302999A1 DEVICE AND METHOD FOR CYLINDER-TORQUE EQUALIZATION OF AN INTERNAL COMBUSTION ENGINE, COMPUTER PROGRAM, COMPUTER PROGRAM PRODUCT 有权
标题翻译：内燃机，计算机程序，计算机程序产品的气缸 - 扭矩均衡的装置和方法
公开(公告)号：US20110302999A1
公开(公告)日：2011-12-15
申请号：US13141627
申请日：2009-12-17
申请人： Guido Porten , Lu Chen , Marc Schott
发明人： Guido Porten , Lu Chen , Marc Schott
IPC分类号： G01M15/00
CPC分类号： F02D41/221 , F02D41/0085 , F02D41/1498 , F02D41/3076 , Y02T10/40
摘要： A device, a method, a computer program and a computer program product for diagnosing an internal combustion engine (100), in which a first cylinder (102) includes a combustion chamber (101), a fuel quantity and a fresh air quantity being supplied to the combustion chamber (101) for combustion; a torque contribution (D), generated by the combustion, of the first cylinder (102) in a first operating mode (B1) of the internal combustion engine (100) being a function of the fresh air quantity supplied, and in a second operating mode (B2) of the internal combustion engine (100) being essentially a function of the fuel quantity, wherein a first variable (L1) characterizing a smooth running of the internal combustion engine (100) in the first operating mode (B1) is ascertained, a second variable (L2) characterizing the smooth running of the internal combustion engine (100) in the second operating mode is ascertained, the first variable (L1) is compared to the second variable (L2), a diagnosis of the internal combustion engine (100) is made as a function of the result of the comparison.
摘要翻译：一种用于诊断内燃机（100）的装置，方法，计算机程序和计算机程序产品，其中第一气缸（102）包括燃烧室（101），供应的燃料量和新鲜空气量到燃烧室（101）进行燃烧; 在内燃机（100）的第一操作模式（B1）中由第一气缸（102）产生的扭矩贡献（D）是所供应的新鲜空气量的函数，并且在第二操作确定内燃机（100）的模式（B2）基本上是燃料量的函数，其中确定表征第一运行模式（B1）中的内燃机（100）的平稳运行的第一变量（L1）确定表征内燃机（100）在第二运行模式下的平稳运行的第二变量（L2），将第一变量（L1）与第二变量（L2）进行比较，内燃机（100）作为比较结果的函数。

29. 发明申请

US20090106457A1 Sequencing control of functions on interacting devices 有权
标题翻译：交互设备功能的排序控制
公开(公告)号：US20090106457A1
公开(公告)日：2009-04-23
申请号：US11986542
申请日：2007-11-20
申请人： Hans Hillner , Klaus Herz , Lu Chen , Michael Ebert , Timo Koenig
发明人： Hans Hillner , Klaus Herz , Lu Chen , Michael Ebert , Timo Koenig
IPC分类号： G06F3/00
CPC分类号： G05B19/0421 , G05B2219/2222 , G05B2219/24063 , G05B2219/2623 , G05B2219/35283 , G06F9/52
摘要： A method for controlling the sequence of a plurality of functions which are executable on at least two interacting devices is provided, first of the functions being implemented on a first device and the second of the functions being implemented on a second device. A system for implementing the method is provided, including an administrative unit which controls a sequence of the functions in such a manner that it prevents a first function and a second function which interfere with one another from simultaneously running.
摘要翻译：提供了一种用于控制可在至少两个交互设备上执行的多个功能的序列的方法，第一功能在第一设备上实现，第二功能被实现在第二设备上。提供一种用于实现该方法的系统，包括一个管理单元，该管理单元以防止第一功能和彼此干扰的第二功能同时运行的方式来控制功能序列。

30. 发明申请

US20060164181A1 Coupling flatness compensated directional coupler 审中-公开
标题翻译：耦合平坦度补偿定向耦合器
公开(公告)号：US20060164181A1
公开(公告)日：2006-07-27
申请号：US11040793
申请日：2005-01-24
申请人： Lu Chen
发明人： Lu Chen
IPC分类号： H01P5/18
CPC分类号： H01P5/184
摘要： A directional coupler that has improved coupling flatness. The directional coupler includes a first, second and third coupler. Each of the couplers has an input port, an output port, a forward coupled port and a reverse coupled port. The forward coupled port of the first coupler is connected to the input port of the second coupler. The reverse coupled port of the first coupler is connected to ground. The output port of the second coupler is connected to the input port of the third coupler. The output port of the third coupler forms a second forward coupled port. The second and third couplers reduce the variation in coupling over a frequency range.
摘要翻译：具有改善的耦合平坦度的定向耦合器。定向耦合器包括第一，第二和第三耦合器。每个耦合器具有输入端口，输出端口，正向耦合端口和反向耦合端口。第一耦合器的正向耦合端口连接到第二耦合器的输入端口。第一耦合器的反向耦合端口连接到地。第二耦合器的输出端口连接到第三耦合器的输入端口。第三耦合器的输出端口形成第二前向耦合端口。第二和第三耦合器减少频率范围内的耦合变化。

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