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21. 发明授权

US06479836B1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US06479836B1
公开(公告)日：2002-11-12
申请号：US09641215
申请日：2000-08-18
申请人： Nobuhiro Suzuki , Hideto Sugawara
发明人： Nobuhiro Suzuki , Hideto Sugawara
IPC分类号： H01L2906
CPC分类号： H01L33/14 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/34333
摘要： According to the invention, there is provided a semiconductor light emitting device comprising: a contact layer formed of a nitride semiconductor; and a p-side electrode provided in contact with a surface of the contact layer, the contact layer having a superlattice including an alternative stacked structure of first nitride semiconductor layers having a wider bandgap and second nitride semiconductor layers having a narrower bandgap, the first semiconductor layers being selectively doped with a p-type dopant.
摘要翻译：根据本发明，提供了一种半导体发光器件，包括：由氮化物半导体形成的接触层; 以及设置成与所述接触层的表面接触的p侧电极，所述接触层具有超晶格，所述超晶格包括具有较宽带隙的第一氮化物半导体层和具有较窄带隙的第二氮化物半导体层的替代堆叠结构，所述第一半导体层被选择性地掺杂有p型掺杂剂。

22. 发明授权

US06232137B1 Semiconductor light emitting element and its manufacturing method 失效
公开(公告)号：US06232137B1
公开(公告)日：2001-05-15
申请号：US09089624
申请日：1998-06-03
申请人： Hideto Sugawara , Masayuki Ishikawa
发明人： Hideto Sugawara , Masayuki Ishikawa
IPC分类号： H01L2100
CPC分类号： H01L33/007 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01S5/32341
摘要： When a plurality of semiconductor layers including a nitride compound layer containing indium are stacked on a substrate, materials of layers above the indium containing nitride compound layer are limited to specific compounds, or their growth temperatures are limited within a predetermined range, to suppress thermal deterioration of the nitride compound layer containing indium or deterioration of the interface and to thereby grow a high-quality semiconductor light emitting element using nitride compound semiconductors. When manufacturing a nitride compound semiconductor light emitting element having a first layer made of a first nitride compound semiconductor containing indium and a second layer stacked on the first layer, conditions for stacking the second layer are selected those inside a closed region defined by connecting points plotted at x and y coordinates (364, 600), (364, 1010), (550, 1010), (650, 600) and (364, 600) on a graph taking emission wavelengths based on band-to-band transition of the first layer in nanometer on the x axis and taking growth temperatures of the second layer in ° C. on the y axis. Thus, a high-performance light emitting element can be made without inviting thermal deterioration of the first layer.

23. 发明授权

US6020602A GaN based optoelectronic device and method for manufacturing the same 失效
标题翻译： GaN基光电子器件及其制造方法
公开(公告)号：US6020602A
公开(公告)日：2000-02-01
申请号：US925271
申请日：1997-09-08
申请人： Hideto Sugawara , Masayuki Ishikawa
发明人： Hideto Sugawara , Masayuki Ishikawa
IPC分类号： H01L33/04 , H01L33/14 , H01L33/32 , H01L33/38 , H01L33/00 , H01S3/19
CPC分类号： H01S5/32 , H01L33/04 , H01L33/145 , H01L33/32 , H01L33/325 , H01L33/20 , H01L33/42
摘要： An n-cap layer is formed on a top surface of p-type clad layers, the p-type clad layer is a top layer of a stacked structure having a pn-junction for emitting carriers into light-emitting region of a GaN based light-emitting device, thus increasing the activation ratio of acceptor impurities in the p-type clad layers. The n-cap layer is used also as a current blocking layer, thereby constructing a current-blocked structure. The n-cap layer should preferably be made of In.sub.u Al.sub.v Ga.sub.1-u-v N (0
摘要翻译：在p型覆盖层的顶表面上形成n盖层，p型覆盖层是具有用于将载流子发射到GaN基光的发光区域的pn结的层叠结构的顶层从而增加p型覆层中受主杂质的活化率。 n帽层也用作电流阻挡层，从而构成电流阻挡结构。 n帽层应优选由厚度为1.0微米以上的InuAlvGa1-u-vN（0

24. 发明授权

US5202895A Semiconductor device having an active layer made of InGaAlP material 失效
标题翻译：具有活性层的半导体器件制成的材料
公开(公告)号：US5202895A
公开(公告)日：1993-04-13
申请号：US695088
申请日：1991-05-03
申请人： Koichi Nitta , Masayuki Ishikawa , Yukie Nishikawa , Hideto Sugawara , Minoru Watanabe , Masaki Okajima , Genichi Hatakoshi
发明人： Koichi Nitta , Masayuki Ishikawa , Yukie Nishikawa , Hideto Sugawara , Minoru Watanabe , Masaki Okajima , Genichi Hatakoshi
IPC分类号： H01S5/22 , H01S5/223 , H01S5/32 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/2231 , H01S5/34326 , H01S5/2206 , H01S5/2209 , H01S5/221 , H01S5/3201 , H01S5/321 , H01S5/32325
摘要： A semiconductor laser device comprises a compound semiconductor substrate, a first cladding layer formed on the substrate, an active layer formed on the first cladding layer, made of In.sub.1-y (Ga.sub.1-x Al.sub.x).sub.y P material (0.ltoreq.x

25. 发明授权

US5048035A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US5048035A
公开(公告)日：1991-09-10
申请号：US530120
申请日：1990-05-29
申请人： Hideto Sugawara , Masayuki Ishikawa , Yoshihiro Kokubun , Yukie Nishikawa , Shigeya Naritsuka
发明人： Hideto Sugawara , Masayuki Ishikawa , Yoshihiro Kokubun , Yukie Nishikawa , Shigeya Naritsuka
IPC分类号： H01L33/00 , H01L33/14 , H01L33/30 , H01L33/38 , H01S5/042 , H01S5/183 , H01S5/22 , H01S5/30 , H01S5/32 , H01S5/343
CPC分类号： H01L33/38 , B82Y20/00 , H01L33/0025 , H01L33/14 , H01L33/145 , H01L33/30 , H01L33/387
摘要： A semiconductor light emitting device, especially, a light emitting diode includes a compound semiconductor substrate of a first conductivity type, an InGaAlP layer formed on the substrate and having a light emitting region, a GaAlAs layer of a second conductivity type formed on the InGaAlP layer and having a larger band gap than that of the InGaAlP layer, and an electrode formed on a part of the GaAlAs layer. The light emitting diode emits light from a surface at the electrode side except for the electrode. A current from the electrode is widely spread by the GaAlAs layer to widely spread a light emitting region.
摘要翻译：一种半导体发光器件，特别是发光二极管，包括第一导电类型的化合物半导体衬底，形成在衬底上并具有发光区域的InGaAlP层，形成在InGaAlP层上的第二导电类型的GaAlAs层并且具有比InGaAlP层更大的带隙，以及形成在GaAlAs层的一部分上的电极。发光二极管从除了电极之外的电极侧的表面发光。来自电极的电流被GaAlAs层广泛扩散，以广泛扩散发光区域。

26. 发明授权

US5034957A Semiconductor laser device 失效
公开(公告)号：US5034957A
公开(公告)日：1991-07-23
申请号：US307278
申请日：1989-02-07
申请人： Yasuo Ohba , Yukie Nishikawa , Hajime Okuda , Masayuki Ishikawa , Hideto Sugawara , Hideo Shiozawa , Yoshihiro Kokubun
发明人： Yasuo Ohba , Yukie Nishikawa , Hajime Okuda , Masayuki Ishikawa , Hideto Sugawara , Hideo Shiozawa , Yoshihiro Kokubun
IPC分类号： H01L33/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/323
CPC分类号： H01S5/20 , H01L33/0062 , H01S5/305 , H01S5/32325 , H01S5/2059 , H01S5/2206 , H01S5/2231 , H01S5/3054
摘要： A semiconductor laser device using double heterostructure comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1), capable of preventing the leakage of the carriers and thereby reducing the threshold current, being operative with small threshold current density and at high temperature, and having a long lifetime. The device may include a double heterostructure formed on the GaAs substrate, comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) including an active layer, the active layer having an impurity concentration not greater than 5.times.10.sup.16 cm.sup.-3. The device may include a double heterostructure formed on the GaAs substrate, comprised of InGaP active layer and p-type In.sub.q (Ga.sub.1-z Al.sub.z).sub.q P (0.ltoreq.q.ltoreq.1, 0.ltoreq.z.ltoreq.1) cladding layer with a value of z between 0.65 and 0.75. The device may include a double heterostructure formed on the GaAs substrate, comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) including an n-type cladding layer and an p-type cladding layer, one of the n-type cladding layer and the p-type cladding layer being Si-doped. A method of manufacturing the device is also disclosed.

27. 发明授权

US08502350B2 Stacked layers of nitride semiconductor and method for manufacturing the same 有权
标题翻译：堆叠氮化物半导体层及其制造方法
公开(公告)号：US08502350B2
公开(公告)日：2013-08-06
申请号：US13102204
申请日：2011-05-06
申请人： Hideto Sugawara , Masaaki Onomura
发明人： Hideto Sugawara , Masaaki Onomura
IPC分类号： H01L29/20
CPC分类号： H01L33/0025 , H01L21/02381 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02661 , H01L29/2003 , H01L33/007
摘要： According to one embodiment, stacked layers of a nitride semiconductor include a substrate, a single crystal layer and a nitride semiconductor layer. The substrate does not include a nitride semiconductor and has a protrusion on a major surface. The single crystal layer is provided directly on the major surface of the substrate to cover the protrusion, and includes a crack therein. The nitride semiconductor layer is provided on the single crystal layer.
摘要翻译：根据一个实施例，氮化物半导体的堆叠层包括衬底，单晶层和氮化物半导体层。基板不包括氮化物半导体，并且在主表面上具有突起。单晶层直接设置在基板的主表面上以覆盖突起，并且在其中包括裂纹。氮化物半导体层设置在单晶层上。

28. 发明申请

US20120211784A1 NITRIDE SEMICONDUCTOR STACKED STRUCTURE AND METHOD FOR MANUFACTURING SAME AND NITRIDE SEMICONDUCTOR DEVICE 失效
标题翻译：氮化物半导体堆叠结构及其制造方法和氮化物半导体器件
公开(公告)号：US20120211784A1
公开(公告)日：2012-08-23
申请号：US13223853
申请日：2011-09-01
申请人： Hideto Sugawara
发明人： Hideto Sugawara
IPC分类号： H01L33/32 , H01L21/20 , H01L29/66
CPC分类号： H01L33/20 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L33/007
摘要： According to one embodiment, a nitride semiconductor stacked structure having a first surface includes a substrate, a first buffer layer, a first crystal layer, a second buffer layer and a second crystal layer. A step portion is provided in the substrate and includes an upper surface, a lower surface, and a side surface between the upper surface and the lower surface. The first buffer layer includes InsAltGa1-s-tN (0≦s≦0.05, 0≦t≦1) and covers the lower surface and the side surface. The first crystal layer is provided on the first buffer layer, includes InsAltGa1-s-tN (0≦s≦0.05, 0≦t≦0.05), and has an upper surface provided above the upper surface of the substrate. The second buffer layer includes InsAltGa1-s-tN (0≦s≦0.05, 0≦t≦1) and continuously covers the upper surface of the first crystal layer and the upper surface of the substrate. The second crystal layer covers the second buffer layer, includes InsAltGa1-s-tN (0≦s≦0.05, 0≦t≦0.05), and has the first surface.
摘要翻译：根据一个实施例，具有第一表面的氮化物半导体层叠结构包括基板，第一缓冲层，第一晶体层，第二缓冲层和第二晶体层。台阶部设置在基板中，并且包括上表面，下表面和上表面与下表面之间的侧表面。第一缓冲层包括InsAltGa1-s-tN（0＆nlE; s＆nlE; 0.05,0＆nlE; t＆nlE; 1）并且覆盖下表面和侧表面。第一晶体层设置在第一缓冲层上，包括InsAltGa1-s-tN（0＆nlE; s＆nlE; 0.05,0和nlE; t＆nlE; 0.05），并且在衬底的上表面上方设置上表面。第二缓冲层包括InsAltGa1-s-tN（0＆nlE; s＆nlE; 0.05,0＆nlE; t＆nlE; 1），并连续地覆盖第一晶体层的上表面和衬底的上表面。第二晶体层覆盖第二缓冲层，包括InsAltGa1-s-tN（0＆nlE; s＆nlE; 0.05,0和nlE; t＆nlE; 0.05），并具有第一表面。

29. 发明申请

US20110250714A1 NITRIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：氮化物半导体及其制造方法
公开(公告)号：US20110250714A1
公开(公告)日：2011-10-13
申请号：US13167052
申请日：2011-06-23
申请人： Hideto Sugawara
发明人： Hideto Sugawara
IPC分类号： H01L33/02
CPC分类号： H01L21/02639 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L33/0075 , H01L33/16 , H01S5/3202 , H01S5/3203 , H01S2304/12
摘要： A nitride semiconductor includes: a substrate having a major surface including a first crystal polarity surface and a second crystal polarity surface different from the first crystal polarity surface; and a single polarity layer provided above the major surface and having a single crystal polarity.
摘要翻译：氮化物半导体包括：具有包括第一晶体极性表面和与第一晶体极性表面不同的第二晶体极性表面的主表面的基板; 以及设置在主表面上并具有单晶极性的单极性层。

30. 发明授权

US07141445B2 Semiconductor light emitting device and method for manufacturing same 失效
公开(公告)号：US07141445B2
公开(公告)日：2006-11-28
申请号：US10956173
申请日：2004-09-30
申请人： Hideto Sugawara , Koichi Nitta , Hirohisa Abe , Kuniaki Konno , Yasuo Idei
发明人： Hideto Sugawara , Koichi Nitta , Hirohisa Abe , Kuniaki Konno , Yasuo Idei
IPC分类号： H01L21/328 , H01L21/329
CPC分类号： H01L33/30 , H01L25/0756 , H01L33/0079 , H01L33/32 , H01L33/502 , H01L2924/0002 , H01L2924/00
摘要： There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.

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