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21. 发明授权

US08718109B2 Laser array light source unit 有权
标题翻译：激光阵列光源单元
公开(公告)号：US08718109B2
公开(公告)日：2014-05-06
申请号：US13469102
申请日：2012-05-11
申请人： Naoto Saruwatari , Shigekazu Yamagishi , Shu Nanba , Shigeaki Sakatani , Fumio Yukimoto
发明人： Naoto Saruwatari , Shigekazu Yamagishi , Shu Nanba , Shigeaki Sakatani , Fumio Yukimoto
IPC分类号： H01S3/04
CPC分类号： H04N9/3111 , H01S5/02 , H01S5/02212 , H01S5/02469 , H01S5/4025 , H04N9/3161 , H04N9/3164
摘要： A laser array light source unit 1 includes: a plurality of semiconductor lasers 2 each including a main body portion 2a and a leg portion 2b with two leading electrodes; a laser holder 3 holding the main body portions 2a, and having through-holes for the leg portions 2b; a pressing member 5 for fixing the semiconductor lasers 2 to the laser holder 3; an insulator 4 including a plurality of electrode insertion portions 4f having through-holes for the leading electrodes; and a wiring base 6 for electrically connecting at least two of the semiconductor lasers 2 in series. The insulator 4 includes a connecting portion 4b for connecting the plurality of electrode insertion portions 4f in the same direction in which the plurality of semiconductor lasers 2 are arranged. The wiring base 6 includes first through-holes into which the leading electrodes of the semiconductor lasers 2 are inserted.
摘要翻译：激光阵列光源单元1包括：多个半导体激光器2，每个半导体激光器2包括具有两个引导电极的主体部分2a和腿部2b; 保持主体部2a的激光保持器3，并具有用于脚部2b的通孔; 用于将半导体激光器2固定到激光器保持器3的按压部件5; 绝缘体4，包括具有用于引导电极的通孔的多个电极插入部分4f; 以及用于将至少两个半导体激光器2串联连接的布线基座6。绝缘体4包括连接部分4b，用于在多个半导体激光器2的相同方向上连接多个电极插入部分4f。布线基底6包括插入半导体激光器2的引导电极的第一通孔。

22. 发明授权

US08691377B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08691377B2
公开(公告)日：2014-04-08
申请号：US13259009
申请日：2010-04-22
申请人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Takahiro Matsuo
发明人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Takahiro Matsuo
IPC分类号： H01L23/488
CPC分类号： H01L21/563 , H01L23/3733 , H01L23/3736 , H01L23/49568 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/83 , H01L2224/29 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/29213 , H01L2224/29309 , H01L2224/29311 , H01L2224/29318 , H01L2224/29339 , H01L2224/29347 , H01L2224/32245 , H01L2224/48227 , H01L2224/73203 , H01L2224/83101 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01058 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , Y10T428/25 , Y10T428/256 , H01L2924/00 , H01L2924/01083 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device of the present invention includes a supporting board, an electrode surface processing layer formed on the supporting board, a semiconductor element, and a solder material containing a first metal composed mainly of bismuth and a second metal having a higher melting point than the first metal and joining the electrode surface processing layer and the semiconductor element, the first metal containing particles of the second metal inside the first metal. The composition ratio of the second metal is higher than the first metal in a region of the solder material corresponding to the center portion of the semiconductor element, and the composition ratio of the second metal is at least 83.8 atomic percent in the region corresponding to the center portion.
摘要翻译：本发明的半导体器件包括支撑板，形成在支撑板上的电极表面处理层，半导体元件和包含主要由铋组成的第一金属和比第二金属高的熔点的第二金属的焊料材料第一金属，并且接合电极表面处理层和半导体元件，第一金属内的第一金属含有第二金属的颗粒。在对应于半导体元件的中心部分的焊料材料的区域中，第二金属的组成比高于第一金属，并且第二金属的组成比在对应于半导体元件的区域中至少为83.8原子％中心部分。

23. 发明授权

US08598464B2 Soldering material and electronic component assembly 有权
标题翻译：焊料和电子元器件组装
公开(公告)号：US08598464B2
公开(公告)日：2013-12-03
申请号：US12999411
申请日：2010-04-19
申请人： Shigeaki Sakatani , Akio Furusawa , Kenichiro Suetsugu , Taichi Nakamura
发明人： Shigeaki Sakatani , Akio Furusawa , Kenichiro Suetsugu , Taichi Nakamura
IPC分类号： H05K1/16 , B23K31/00 , C22C13/02
CPC分类号： H05K3/3463 , B23K35/262 , B23K2101/36 , B32B15/01 , C22C13/00 , H05K3/3442 , H05K2201/10992 , Y02P70/613
摘要： A solder material includes 1.0-4.0% by weight of Ag, 4.0-6.0% by weight of In, 0.1-1.0% by weight of Bi, 1% by weight or less (excluding 0% by weight) of a sum of one or more elements selected from the group consisting of Cu, Ni, Co, Fe and Sb, and a remainder of Sn. When a copper-containing electrode part of an electronic component is connected to a copper-containing electrode land of a substrate by using this solder material, a part having an excellent stress relaxation property can be formed in the solder-connecting part and a Cu—Sn intermetallic compound can be rapidly grown from the electrode land and the electrode part to form a strong blocking structure.
摘要翻译：焊料材料包括1.0-4.0重量％的Ag，4.0-6.0重量％的In，0.1-1.0重量％的Bi，1重量％以下（不包括0重量％）的1个或选自由Cu，Ni，Co，Fe和Sb组成的组中的更多元素，以及Sn的剩余部分。当通过使用该焊料将电子部件的含铜电极部分连接到基板的含铜电极焊盘时，可以在焊料连接部分中形成具有优异的应力松弛特性的部分， Sn金属间化合物可以从电极焊盘和电极部分快速生长，形成强阻挡结构。

24. 发明授权

US08268718B2 Bonded structure and manufacturing method for bonded structure 有权
标题翻译：粘结结构的粘结结构和制造方法
公开(公告)号：US08268718B2
公开(公告)日：2012-09-18
申请号：US13007693
申请日：2011-01-17
申请人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Takahiro Matsuo
发明人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Takahiro Matsuo
IPC分类号： H01L21/44
CPC分类号： H01L24/29 , H01L23/49513 , H01L24/27 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L2224/29 , H01L2224/29101 , H01L2224/2929 , H01L2224/29313 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2224/83192 , H01L2224/83439 , H01L2224/83444 , H01L2224/83455 , H01L2224/83464 , H01L2224/838 , H01L2224/85 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/10252 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/181 , H01L2924/00 , H01L2924/01014 , H01L2924/01007 , H01L2924/01031 , H01L2924/01013 , H01L2924/01025 , H01L2924/01015 , H01L2924/01016 , H01L2924/01034 , H01L2924/3512 , H01L2924/01028 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A manufacturing method for a bonded structure, in which a semiconductor device is bonded to an electrode by a bonding portion, the method including: first mounting a solder ball, in which a surface of a Bi ball is coated with Ni plating, on the electrode that is heated to a temperature equal to or more than a melting point of Bi; second pressing the solder ball against the heated electrode, cracking the Ni plating, spreading molten Bi on a surface of the heated electrode, and forming a bonding material containing Bi-based intermetallic compound of Bi and Ni; and third mounting the semiconductor device on the bonding material.
摘要翻译：一种接合结构的制造方法，其中半导体器件通过接合部分接合到电极上，所述方法包括：首先将其中Bi球的表面涂覆有Ni镀层的焊球安装在电极上加热到等于或大于Bi的熔点的温度; 第二次将焊球压在加热电极上，破裂Ni镀层，将熔融的Bi扩散到加热电极的表面，并形成含有Bi和Ni的Bi基金属间化合物的接合材料; 并且第三将半导体器件安装在接合材料上。

25. 发明申请

US20120018890A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120018890A1
公开(公告)日：2012-01-26
申请号：US13259009
申请日：2010-04-22
申请人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Takahiro Matsuo
发明人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Takahiro Matsuo
IPC分类号： H01L23/488
CPC分类号： H01L21/563 , H01L23/3733 , H01L23/3736 , H01L23/49568 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/83 , H01L2224/29 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/29213 , H01L2224/29309 , H01L2224/29311 , H01L2224/29318 , H01L2224/29339 , H01L2224/29347 , H01L2224/32245 , H01L2224/48227 , H01L2224/73203 , H01L2224/83101 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01058 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , Y10T428/25 , Y10T428/256 , H01L2924/00 , H01L2924/01083 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device of the present invention includes a supporting board, an electrode surface processing layer formed on the supporting board, a semiconductor element, and a solder material containing a first metal composed mainly of bismuth and a second metal having a higher melting point than the first metal and joining the electrode surface processing layer and the semiconductor element, the first metal containing particles of the second metal inside the first metal. The composition ratio of the second metal is higher than the first metal in a region of the solder material corresponding to the center portion of the semiconductor element, and the composition ratio of the second metal is at least 83.8 atomic percent in the region corresponding to the center portion.
摘要翻译：本发明的半导体器件包括支撑板，形成在支撑板上的电极表面处理层，半导体元件和包含主要由铋组成的第一金属和比第二金属高的熔点的第二金属的焊料材料第一金属，并且接合电极表面处理层和半导体元件，第一金属内的第一金属含有第二金属的颗粒。在对应于半导体元件的中心部分的焊料材料的区域中，第二金属的组成比高于第一金属，并且第二金属的组成比在对应于半导体元件的区域中至少为83.8原子％中心部分。

26. 发明申请

US20110108996A1 JOINT STRUCTURE, JOINING MATERIAL AND METHOD FOR PRODUCING JOINING MATERIAL 有权
标题翻译：接头结构，接合材料和生产接合材料的方法
公开(公告)号：US20110108996A1
公开(公告)日：2011-05-12
申请号：US13003024
申请日：2010-06-17
申请人： Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Taichi Nakamura , Takahiro Matsuo
发明人： Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Taichi Nakamura , Takahiro Matsuo
IPC分类号： H01L29/40 , C22C12/00 , B05D5/12
CPC分类号： C22C12/00 , B23K1/0016 , B23K1/20 , B23K35/264 , B23K35/362 , B23K2101/40 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/29118 , H01L2224/29144 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83439 , H01L2224/838 , H01L2224/83805 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01061 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10329 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/01014 , H01L2924/00012 , H01L2924/01007 , H01L2924/01031 , H01L2924/01049 , H01L2924/01016 , H01L2924/01083 , H01L2924/01034 , H01L2924/3512 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor component having a joint structure including a semiconductor device, an electrode disposed opposite the semiconductor device, and a joining material which contains Bi as main component and connects the semiconductor device to the electrode. Since the joining material contains a carbon compound, joint failure due to the difference in linear expansion coefficient between the semiconductor device and the electrode can be reduced compared with conventional materials. The joining material which contains Bi as main component enables provision of a joint structure in which a semiconductor device and an electrode are joined by a joint more reliable than a conventional joint.
摘要翻译：本发明提供一种具有接合结构的半导体部件，该接合结构包括半导体器件，与半导体器件相对设置的电极，以及包含Bi作为主要部件并将半导体器件连接到电极的接合材料。由于接合材料含有碳化合物，与常规材料相比，可以减少由于半导体器件和电极之间的线性膨胀系数的差异引起的接合故障。含有Bi作为主要成分的接合材料能够提供通过比常规接头更可靠的接头将半导体器件和电极接合的接合结构。

27. 发明申请

US20100301481A1 JOINT STRUCTURE AND ELECTRONIC COMPONENT 有权
标题翻译：联合结构与电子元件
公开(公告)号：US20100301481A1
公开(公告)日：2010-12-02
申请号：US12864826
申请日：2009-05-22
申请人： Akio Furusawa , Shigeaki Sakatani , Taichi Nakamura , Takahiro Matsuo
发明人： Akio Furusawa , Shigeaki Sakatani , Taichi Nakamura , Takahiro Matsuo
IPC分类号： H01L23/532
CPC分类号： B23K1/0016 , B23K35/0233 , B23K35/0238 , B23K35/264 , B23K2101/40 , C22C12/00 , C22C19/03 , H01L23/488 , H01L23/49503 , H01L23/49513 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/05556 , H01L2224/29101 , H01L2224/29113 , H01L2224/2919 , H01L2224/32245 , H01L2224/32257 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48699 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2224/838 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/10162 , H01L2924/10253 , H01L2924/10272 , H01L2924/1033 , H01L2924/1305 , H01L2924/13055 , H01L2924/15153 , H01L2924/15165 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/00 , H01L2924/01083 , H01L2924/3512 , H01L2924/00012
摘要： A joint structure joins an electronic element 12 included in an electronic component to an electrode 14 included in that electronic component. The joint structure includes a solder layer, which contains 0.2 to 6% by weight of copper, 0.02 to 0.2% by weight of germanium and 93.8 to 99.78% by weight of bismuth, a nickel layer provided between the solder layer and the electrode, and a barrier layer provided between the nickel layer and the solder layer. Here, the barrier layer is formed so as to have an average thickness of from 0.5 to 4.5 μm after the electronic element and the electrode are joined by the solder layer.
摘要翻译：接合结构将包括在电子部件中的电子元件12与包括在该电子部件中的电极14连接。接头结构包括焊料层，其含有0.2〜6重量％的铜，0.02〜0.2重量％的锗和93.8〜99.78重量％的铋，设置在焊料层和电极之间的镍层，以及设置在镍层和焊料层之间的阻挡层。这里，在电子元件和电极通过焊料层接合之后，阻挡层形成为具有0.5至4.5μm的平均厚度。

28. 发明申请

US20090173795A1 CARD TYPE INFORMATION DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：卡类型信息装置及其制造方法
公开(公告)号：US20090173795A1
公开(公告)日：2009-07-09
申请号：US12160541
申请日：2007-02-26
申请人： Shozo Ochi , Osamu Uchida , Shigeaki Sakatani , Daisuke Sakurai , Masato Mori , Hiroshi Sakurai , Hidenobu Nishikawa
发明人： Shozo Ochi , Osamu Uchida , Shigeaki Sakatani , Daisuke Sakurai , Masato Mori , Hiroshi Sakurai , Hidenobu Nishikawa
IPC分类号： G06K19/077 , H01Q1/38 , H01Q7/00 , H05K3/00
CPC分类号： H01Q1/22 , G06K19/07732 , G06K19/07749 , H01Q7/06 , H05K1/0218 , H05K1/144 , H05K1/148 , H05K1/16 , H05K2201/043 , H05K2201/086 , Y10T29/4913
摘要： Card type information device includes wiring board having a wiring pattern with an electronic component mounted on a first face of wiring board and an antenna connecting electrode, antenna board having antenna pattern with antenna terminal electrodes formed on a first face of antenna board, magnetic material placed between wiring board and antenna board confronting each other, flexible wiring board for coupling the antenna connecting electrode to antenna terminal electrode, and housing for accommodating wiring board, antenna board, magnetic material, and flexible wiring board. Wiring board and antenna board are made from one and the same insulating motherboard.
摘要翻译：卡类型信息装置包括具有安装在布线板的第一面上的电子部件和天线连接电极的布线图案的布线板，天线板天线阵列与天线端子电极形成在天线板的第一面上，磁性材料放置在布线板和天线板之间，用于将天线连接电极耦合到天线端子电极的柔性布线板和用于容纳布线板，天线板，磁性材料和柔性布线板的壳体。接线板和天线板由同一个绝缘母板制成。

29. 发明授权

US08810035B2 Semiconductor bonding structure body and manufacturing method of semiconductor bonding structure body 有权
标题翻译：半导体结合体和半导体结合体的制造方法
公开(公告)号：US08810035B2
公开(公告)日：2014-08-19
申请号：US13823463
申请日：2011-10-17
申请人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Yukihiro Ishimaru
发明人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Yukihiro Ishimaru
IPC分类号： H01L23/00 , B23K35/26 , H01L21/56 , B23K35/30 , C22C5/02 , C22C13/00 , C22C5/06 , B23K35/02 , B23K1/00 , C22C9/00 , C22C1/04
CPC分类号： H01L24/30 , B22F2999/00 , B23K1/0016 , B23K35/0238 , B23K35/26 , B23K35/262 , B23K35/3006 , B23K35/3013 , B23K35/302 , B23K2101/40 , B32B15/018 , C22C1/0483 , C22C5/02 , C22C5/06 , C22C9/00 , C22C9/02 , C22C13/00 , H01L21/563 , H01L23/4827 , H01L23/562 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/04026 , H01L2224/05147 , H01L2224/05639 , H01L2224/05647 , H01L2224/2733 , H01L2224/29 , H01L2224/29111 , H01L2224/29113 , H01L2224/32245 , H01L2224/32503 , H01L2224/32507 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83 , H01L2224/83065 , H01L2224/83439 , H01L2224/83444 , H01L2224/8381 , H01L2224/83815 , H01L2924/00015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/351 , H01L2924/3512 , H01L2924/00014 , B22F1/0003 , H01L2924/0105 , H01L2924/00 , H01L2924/00012 , H01L2924/01047 , H01L2924/01083 , H01L2924/01049 , H01L2924/01028 , H01L2224/45099
摘要： A bonding structure body in which a semiconductor element and an electrode are bonded via a solder material, wherein a part that allows bonding has a first intermetallic compound layer that has been formed on the electrode side, a second intermetallic compound layer that has been formed on the semiconductor element side, and a third layer that is constituted by a phase containing Sn and a sticks-like intermetallic compound part, which is sandwiched between the two layers of the first intermetallic compound layer and the second intermetallic compound layer, and the sticks-like intermetallic compound part is interlayer-bonded to both of the first intermetallic compound layer and the second intermetallic compound layer.
摘要翻译：一种接合结构体，其中半导体元件和电极通过焊料材料接合，其中允许接合的部分具有形成在电极侧的第一金属间化合物层，形成在第二金属间化合物层上的第二金属间化合物层半导体元件侧和由夹在第一金属间化合物层和第二金属间化合物层的两层之间的含有Sn和棒状金属间化合物部分的相位构成的第三层，类似金属间化合物部分被层间接合到第一金属间化合物层和第二金属间化合物层上。

30. 发明授权

US08552307B2 Mounting structure 有权
标题翻译：安装结构
公开(公告)号：US08552307B2
公开(公告)日：2013-10-08
申请号：US13110136
申请日：2011-05-18
申请人： Kiyohiro Hine , Shigeaki Sakatani , Akio Furusawa
发明人： Kiyohiro Hine , Shigeaki Sakatani , Akio Furusawa
IPC分类号： H05K1/18
CPC分类号： H05K1/111 , H05K3/3442 , H05K3/3484 , H05K2201/09381 , H05K2201/0939 , H05K2201/09663 , H05K2201/09745 , H05K2201/10636 , Y02P70/611 , Y02P70/613
摘要： A mounting structure includes an insulating substrate having a substrate electrode on which at least one electrode notch is provided and a resist, an electronic component having an electronic component electrode to be electrically connected to the substrate electrode, and solder paste printed on a surface of the substrate electrode. The substrate electrode has a following relation, 0
摘要翻译：安装结构包括绝缘基板，其具有设置有至少一个电极切口的基板电极和抗蚀剂，具有电连接到基板电极的电子部件电极的电子部件和印刷在基板电极的表面上的焊膏基板电极。基板电极具有以下关系：0

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