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21. 发明申请

US20130032928A1 GROUP III NITRIDE COMPOSITE SUBSTRATE 审中-公开
标题翻译：第III组氮化物复合基板
公开(公告)号：US20130032928A1
公开(公告)日：2013-02-07
申请号：US13641582
申请日：2011-11-07
申请人： Issei Satoh , Hiroaki Yoshida , Yoshiyuki Yamamoto , Akihiro Hachigo , Hideki Matsubara
发明人： Issei Satoh , Hiroaki Yoshida , Yoshiyuki Yamamoto , Akihiro Hachigo , Hideki Matsubara
IPC分类号： H01L29/20
CPC分类号： H01L21/76254 , H01L21/0242 , H01L21/02488 , H01L21/0254
摘要： A group III nitride composite substrate includes a support substrate, an oxide film formed on the support substrate, and a group III nitride layer formed on the oxide film. The oxide film may be a film selected from the group consisting of a TiO2 film and a SrTiO3 film, and an impurity may be added to the oxide film. Accordingly, the group III nitride composite substrate having a high bonding strength between the support substrate and the group III nitride layer is provided.
摘要翻译： III族氮化物复合衬底包括支撑衬底，形成在支撑衬底上的氧化物膜和形成在氧化物膜上的III族氮化物层。氧化物膜可以是选自TiO 2膜和SrTiO 3膜的膜，并且可以向氧化物膜中添加杂质。因此，提供了在支撑基板和III族氮化物层之间具有高结合强度的III族氮化物复合基板。

22. 发明申请

US20100103972A1 PHOTONIC CRYSTAL LASER AND METHOD OF MANUFACTURING PHOTONIC CRYSTAL LASER 失效
标题翻译：光子晶体激光器和制造光子晶体激光的方法
公开(公告)号：US20100103972A1
公开(公告)日：2010-04-29
申请号：US12531855
申请日：2008-01-29
申请人： Hirohisa Saito , Hideki Matsubara
发明人： Hirohisa Saito , Hideki Matsubara
IPC分类号： H01S5/343 , H01S5/18 , H01S5/042 , H01L21/18
CPC分类号： H01S5/18 , B82Y20/00 , H01L2224/48091 , H01L2224/48463 , H01S5/0206 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/105 , H01S5/2009 , H01S5/34333 , H01L2924/00014
摘要： A photonic crystal laser comprises an n-type substrate, an n-type clad layer, an active layer, a p-type clad layer, a photonic crystal layer, a p-type electrode, an n-type electrode and a package member. The n-type clad layer is formed on a first surface of the n-type substrate. The active layer is formed on the n-type clad layer. The p-type clad layer is formed on the active layer. The photonic crystal layer is formed between the n-type clad layer and the active layer or between the active layer and the p-type clad layer, and includes a photonic crystal portion. The p-type electrode is formed on the photonic crystal portion. The n-type electrode is formed on a second surface, and includes a light-transmitting portion arranged on a position opposed to the photonic crystal portion and an outer peripheral portion having lower light transmittance than the light-transmitting portion.
摘要翻译：光子晶体激光器包括n型衬底，n型覆盖层，有源层，p型覆盖层，光子晶体层，p型电极，n型电极和封装构件。 n型覆盖层形成在n型衬底的第一表面上。有源层形成在n型覆层上。 p型覆盖层形成在有源层上。光子晶体层形成在n型覆盖层与有源层之间或者在有源层与p型覆盖层之间，并且包括光子晶体部分。 p型电极形成在光子晶体部分上。 n型电极形成在第二表面上，并且包括布置在与光子晶体部分相对的位置的透光部分和具有比透光部分低的透光率的外周部分。

23. 发明授权

US06348140B1 Gas sensor with a high combined resistance to lead wire resistance ratio 有权
标题翻译：气体传感器具有较高的组合电阻与导线电阻比
公开(公告)号：US06348140B1
公开(公告)日：2002-02-19
申请号：US09541903
申请日：2000-04-03
申请人： Hideki Matsubara , Noboru Matsui , Nobuhiro Hayakawa
发明人： Hideki Matsubara , Noboru Matsui , Nobuhiro Hayakawa
IPC分类号： G01N27407
CPC分类号： G01N27/4067 , G01N27/419
摘要： A high temperature sensor allowing for accurate measurement including wires running through an oxygen ion conductor and connecting to electrodes sandwiching an oxygen ion conductor substrate having an electrical resistance far smaller than the combined resistance (Rpvs) appearing across the lead wires, where Rpvs is determined by way of a pulse voltage sensing method applied across the electrodes. In the case of a two cavity sensor for NOx measurement, Rpvs is not less than 2.6 times greater, or more preferably 4 times greater than the resistance of the wires. In another embodiment, a common internal oxygen reference source cavity is formed inside the oxygen ion conductor so as to provide the same oxygen partial pressure base for other cavities.
摘要翻译：一种高温传感器，允许精确测量，包括穿过氧离子导体的导线并连接到夹持氧离子导体衬底的电极，该氧离子导体衬底的电阻远远小于出现在引线两端的组合电阻（Rpvs），其中Rpvs由施加在电极上的脉冲电压感测方法。在用于NOx测量的两个空腔传感器的情况下，R pvs不小于电线的电阻的2.6倍或更优选的4倍。在另一个实施例中，在氧离子导体内部形成公共内部氧参考源腔，以便为其它空腔提供相同的氧分压基座。

24. 发明授权

US5864573A Epitaxial wafer and compound semiconductor light emitting device, and method of fabricating the same 失效
标题翻译：外延晶片和化合物半导体发光器件及其制造方法
公开(公告)号：US5864573A
公开(公告)日：1999-01-26
申请号：US636563
申请日：1996-04-23
申请人： Yoshiki Miura , Hideki Matsubara , Hisashi Seki , Akinori Koukitu
发明人： Yoshiki Miura , Hideki Matsubara , Hisashi Seki , Akinori Koukitu
IPC分类号： H01L21/205 , H01L33/12 , H01L33/32 , H01S5/02 , H01S5/323 , H01S3/19 , H01L21/20
CPC分类号： H01L21/02392 , H01L21/02395 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A compound semiconductor light emitting device having a long life and high performance and a method for industrially fabricating the same are provided. The compound semiconductor light emitting device includes a GaP substrate, a buffer layer consisting of InN which is formed on the substrate, a relaxation layer consisting of In.sub.x Ga.sub.1-x N which is formed on the buffer layer, and a luminescent layer consisting of In.sub.k Ga.sub.1-k N which is formed on the relaxation layer. In this description, k represents a constant value within the range of 0
摘要翻译：提供了具有长寿命和高性能的化合物半导体发光器件及其工业制造方法。化合物半导体发光器件包括GaP衬底，由衬底上形成的InN构成的缓冲层，形成在缓冲层上的由In x Ga 1-x N构成的弛豫层和由InkGa1-kN组成的发光层，形成在松弛层上。在本说明书中，k表示在0

25. 发明授权

US08962365B2 Method of manufacturing GaN-based film and composite substrate used therefor 有权
标题翻译：制造用于其的GaN基膜和复合基板的方法
公开(公告)号：US08962365B2
公开(公告)日：2015-02-24
申请号：US13696873
申请日：2011-12-21
申请人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
发明人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
IPC分类号： H01L21/00 , H01L21/02 , C30B23/02 , C30B25/18 , C30B29/40
CPC分类号： H01L21/0254 , C03C10/0018 , C04B35/106 , C04B35/16 , C04B35/185 , C04B35/481 , C04B35/486 , C04B35/488 , C04B35/645 , C04B35/6455 , C04B2235/3225 , C04B2235/3244 , C04B2235/3246 , C04B2235/3463 , C04B2235/9607 , C30B23/025 , C30B25/183 , C30B29/406 , H01L21/02002 , H01L21/02422 , H01L21/02436 , H01L21/02458 , H01L21/02658 , H01L21/02664
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.
摘要翻译：本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括可溶于氢氟酸的支撑基板和布置在支撑基板的主表面侧的单晶膜，热膨胀系数支撑基板的主表面比GaN晶体大0.8倍以上且小于热膨胀系数的1.2倍，在配置在该基板侧的单晶膜的主面上形成GaN基膜支撑基板的主表面，并且通过将支撑基板溶解在氢氟酸中来除去支撑基板。因此，提供了能够有效地获得具有较大主表面积，较少翘曲和良好结晶度的GaN基膜的GaN基膜的制造方法以及用于其的复合基板。

26. 发明授权

US08697550B2 Method of manufacturing GaN-based film 有权
标题翻译：制造GaN基膜的方法
公开(公告)号：US08697550B2
公开(公告)日：2014-04-15
申请号：US13643206
申请日：2011-11-10
申请人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
发明人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
IPC分类号： H01L21/20
CPC分类号： H01L33/007 , H01L21/76256 , H01L33/0079
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.
摘要翻译：本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括主表面的热膨胀系数大于0.8倍且小于1.2倍的支撑基板 GaN晶体沿轴向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于主表面的轴线具有三重对称性单晶膜，并且在复合衬底中的单晶膜的主表面上形成GaN基膜。因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

27. 发明申请

US20130040442A1 METHOD OF MANUFACTURING GaN-BASED FILM 有权
标题翻译：制造GaN基膜的方法
公开(公告)号：US20130040442A1
公开(公告)日：2013-02-14
申请号：US13643206
申请日：2011-11-10
申请人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
发明人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
IPC分类号： H01L21/20
CPC分类号： H01L33/007 , H01L21/76256 , H01L33/0079
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.
摘要翻译：本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括主表面的热膨胀系数大于0.8倍且小于1.2倍的支撑基板 GaN晶体沿轴向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于主表面的轴线具有三重对称性单晶膜，并且在复合衬底中的单晶膜的主表面上形成GaN基膜。因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

28. 发明申请

US20100172390A1 SURFACE-EMITTING LASER ELEMENT, FABRICATION METHOD THEREOF, SURFACE-EMITTING LASER ARRAY, AND FABRICATION METHOD THEREOF 失效
标题翻译：表面发射激光元件，其制造方法，表面发射激光阵列及其制造方法
公开(公告)号：US20100172390A1
公开(公告)日：2010-07-08
申请号：US12376911
申请日：2007-05-21
申请人： Hideki Matsubara , Hirohisa Saito , Fumitake Nakanishi , Shinji Matsukawa
发明人： Hideki Matsubara , Hirohisa Saito , Fumitake Nakanishi , Shinji Matsukawa
IPC分类号： H01S5/343 , H01L33/00 , H01S5/42
CPC分类号： H01S5/18369 , B82Y20/00 , H01S5/0206 , H01S5/0215 , H01S5/105 , H01S5/18308 , H01S5/18341 , H01S5/3202 , H01S5/34333 , H01S5/423 , H01S2301/173
摘要： A fabrication method of a surface-emitting laser element includes a step of preparing a conductive GaN multiple-region substrate including a high dislocation density high conductance region, a low dislocation density high conductance region and a low dislocation density low conductance region, as a conductive GaN substrate; a semiconductor layer stack formation step of forming a plurality of group III-V compound semiconductor layer stack including an emission layer on the substrate; and an electrode formation step of forming a semiconductor side electrode and a substrate side electrode. The semiconductor layer and electrodes are formed such that an emission region into which carriers flow in the emission layer is located above and within the span of the low dislocation density high conductance region. Thus, a surface-emitting laser element having uniform light emission at the emission region can be obtained with favorable yield.
摘要翻译：表面发射激光元件的制造方法包括制备包括高位错密度高电导区，低位错密度高电导区和低位错密度低电导区的导电GaN多区衬底作为导电 GaN衬底; 在衬底上形成包括发射层的多个III-V族化合物半导体层堆叠的半导体层堆叠形成步骤; 以及形成半导体侧电极和基板侧电极的电极形成工序。形成半导体层和电极，使得载流子在发射层中流动的发射区域位于低位错密度高电导区域的跨度之内和之内。因此，可以以良好的产率获得在发射区域具有均匀发光的表面发射激光元件。

29. 发明授权

US06642547B2 Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US06642547B2
公开(公告)日：2003-11-04
申请号：US10114082
申请日：2002-04-01
申请人： Hideki Matsubara , Toshihiko Takebe , Hiroki Ishinaga , Mamoru Maegawa
发明人： Hideki Matsubara , Toshihiko Takebe , Hiroki Ishinaga , Mamoru Maegawa
IPC分类号： H01L2918
CPC分类号： H01L33/28 , H01L33/56 , H01L33/60 , H01L2224/48091 , H01L2224/73265 , H01L2924/181 , H01L2933/0091 , H01L2924/00012 , H01L2924/00014
摘要： The present invention provide a light emitting device including: a resin base having a patterned interconnection; an n-type ZnSe substrate mounted on the resin base; an epitaxial light emission structure formed of a compound crystal relating to ZnSe serving as a matrix, formed on the ZnSe substrate and emitting light when an electric current is applied. A reflector is so constructed and positioned that a spatial distribution of the light emission intensity of the fluorescence light approximates the light emission intensity of the epitaxial light emission structure. The fluorescence light is produced in the ZnSe substrate excited by with the light emission from the epitaxial light emission structure.
摘要翻译：本发明提供一种发光器件，包括：具有图案化互连的树脂基底; 安装在树脂基材上的n型ZnSe基板; 由与ZnSe基体相关的复合晶体形成的外延发光结构，形成在ZnSe基板上，并在施加电流时发光。反射器的构造和定位使得荧光的发光强度的空间分布近似于外延发光结构的发光强度。在由外延发光结构的发光激发的ZnSe衬底中产生荧光。

30. 发明授权

US06509651B1 Substrate-fluorescent LED 失效
标题翻译：基板荧光LED
公开(公告)号：US06509651B1
公开(公告)日：2003-01-21
申请号：US09351323
申请日：1999-07-12
申请人： Hideki Matsubara , Toshihiko Takebe , Kensaku Motoki
发明人： Hideki Matsubara , Toshihiko Takebe , Kensaku Motoki
IPC分类号： H01L3300
CPC分类号： H01L33/08 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014
摘要： A substrate-fluorescent LED having a fluorescent-impurity doped substrate and an epitaxial emission structure including an active layer and being made on the substrate. The epitaxial emission structure emits blue or green light corresponding to the band gap of the active layer. The substrate absorbs a part of the blue or green light and makes fluorescence of a longer wavelength. Neutral color light or white light is emitted from the LED. The fluorescent substrate is n-AlGaAs(Si dope), GaP(Zn+O dope), ZnSe(Cu+I, Ag+I, Al+I dope), GaN(O.C.Va(N) dope) or so.
摘要翻译：具有荧光杂质掺杂衬底的衬底荧光LED和包括有源层的外延发射结构，并且被制成在衬底上。外延发射结构发射对应于有源层的带隙的蓝色或绿色光。衬底吸收一部分蓝色或绿色光，并使荧光波长更长。从LED发出中性色光或白光。荧光基板是n-AlGaAs（Si掺杂），GaP（Zn + O掺杂），ZnSe（Cu + I，Ag + I，Al + I掺杂），GaN（O.C.Va（N）掺杂）等。

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