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21. 发明授权

US08313795B2 Method and apparatus for manufacturing thin film, and method for manufacturing electronic device 失效
标题翻译：制造薄膜的方法和装置及其制造方法
公开(公告)号：US08313795B2
公开(公告)日：2012-11-20
申请号：US12538345
申请日：2009-08-10
申请人： Koji Kadono
发明人： Koji Kadono
IPC分类号： B05D5/12
CPC分类号： H01B1/04 , B05D1/00 , B82Y10/00 , B82Y20/00 , G02F1/13338 , G02F2001/13324 , G02F2202/36 , G06F3/045 , H01B1/24 , H01L21/02527 , H01L21/02628 , H01L51/0003 , H01L51/0048
摘要： A method for manufacturing a thin film, includes the steps of: mixing a thin-film forming material and a surfactant to prepare a dispersion in which the thin-film forming material is dispersed; forming a dispersion film from the dispersion at an inner circumference side of ring-shaped holding means; relatively moving a cylindrical supporter and the dispersion film while being in contact with each other so that the dispersion is transferred on a surface of the supporter to have a film shape, the supporter being disposed between a central portion of an inside space of the holding means and an outer circumference thereof and along an inner circumference of the holding means; drying the dispersion having a film shape formed on the surface of the supporter to form the thin film.
摘要翻译：一种制造薄膜的方法包括以下步骤：将薄膜形成材料和表面活性剂混合以制备其中分散有薄膜形成材料的分散体; 在环状保持装置的内周侧从分散体形成分散膜; 相对移动圆柱形支撑体和分散膜，同时彼此接触，使得分散体转移到支撑体的表面上以具有膜形状，该支撑体设置在保持装置的内部空间的中心部分之间并且其外周和沿着保持装置的内周; 干燥形成在支撑体表面上的具有薄膜形状的分散体以形成薄膜。

22. 发明授权

US07196386B2 Memory element and memory device 失效
标题翻译：存储器元件和存储器件
公开(公告)号：US07196386B2
公开(公告)日：2007-03-27
申请号：US10530006
申请日：2003-10-02
申请人： Koji Kadono , Masafumi Ata
发明人： Koji Kadono , Masafumi Ata
IPC分类号： H01L29/82
CPC分类号： G11C11/16 , B82Y10/00 , B82Y30/00 , G11C13/025 , H01L27/222 , H01L43/08
摘要： A memory element wherein a spin conduction layer having a sufficient spin coherence length and a uniform spin field can be obtained, and thereby practical use is attained and a memory device are provided. A spin conduction layer (paramagnetic layer) (24) is a fullerene thin film being from 0.5 nm to 5 μm thick, for example. The fullerene has a hollow sized, for example, from 0.1 nm to 50 nm. A paramagnetic material is included in this hollow. A fermi vector of the fullerene thin film well laps over small number of spin band or plenty of spin band of a ferromagnetic fixed layer (23) and a ferromagnetic free layer (25). Further, spin orientations of the included paramagnetic material are random. Further, electron spin in the fullerene is in a quantized state in a pseudo zero dimensional space. Thereby, a spin coherence length becomes long in the fullerene thin film, and scatteration of spin-polarized conduction electrons goes away.
摘要翻译：可以获得具有足够的自旋相干长度和均匀自旋场的自旋导电层的存储元件，从而实现实用性并提供存储器件。例如，自旋导电层（顺磁性层）（24）是0.5nm〜5μm厚的富勒烯薄膜。富勒烯具有例如0.1nm至50nm的中空尺寸。这个空心包含顺磁材料。富勒烯薄膜阱的费米子向量在铁磁固定层（23）和铁磁自由层（25）的少量自旋带或大量自旋带上交叉。此外，所包含的顺磁材料的自旋取向是随机的。此外，富勒烯中的电子自旋在伪零维空间中处于量化状态。因此，富勒烯薄膜中的自旋相干长度变长，自旋极化导电电子的散射消失。

23. 发明申请

US20060006334A1 Memory element and memory device 失效
标题翻译：存储器元件和存储器件
公开(公告)号：US20060006334A1
公开(公告)日：2006-01-12
申请号：US10530006
申请日：2003-10-02
申请人： Koji Kadono , Masafumi Ata
发明人： Koji Kadono , Masafumi Ata
IPC分类号： H01L37/00
CPC分类号： G11C11/16 , B82Y10/00 , B82Y30/00 , G11C13/025 , H01L27/222 , H01L43/08
摘要： A memory element wherein a spin conduction layer having a sufficient spin coherence length and a uniform spin field can be obtained, and thereby practical use is attained and a memory device are provided. A spin conduction layer (paramagnetic layer) (24) is a fullerene thin film being from 0.5 nm to 5 μm thick, for example. The fullerene has a hollow sized, for example, from 0.1 nm to 50 nm. A paramagnetic material is included in this hollow. A fermi vector of the fullerene thin film well laps over small number of spin band or plenty of spin band of a ferromagnetic fixed layer (23) and a ferromagnetic free layer (25). Further, spin orientations of the included paramagnetic material are random. Further, electron spin in the fullerene is in a quantized state in a pseudo zero dimensional space. Thereby, a spin coherence length becomes long in the fullerene thin film, and scatteration of spin-polarized conduction electrons goes away.
摘要翻译：可以获得具有足够的自旋相干长度和均匀自旋场的自旋导电层的存储元件，从而实现实用性并提供存储器件。例如，自旋导电层（顺磁性层）（24）是0.5nm〜5μm厚的富勒烯薄膜。富勒烯具有例如0.1nm至50nm的中空尺寸。这个空心包含顺磁材料。富勒烯薄膜阱的费米子向量在铁磁固定层（23）和铁磁自由层（25）的少量自旋带或大量自旋带上交叉。此外，所包含的顺磁材料的自旋取向是随机的。此外，富勒烯中的电子自旋在伪零维空间中处于量化状态。因此，富勒烯薄膜中的自旋相干长度变长，自旋极化导电电子的散射消失。

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