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21. 发明授权

US08546210B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08546210B2
公开(公告)日：2013-10-01
申请号：US12794120
申请日：2010-06-04
申请人： Yoshiaki Yamamoto , Koichiro Tanaka , Atsuo Isobe , Daisuke Ohgarane , Shunpei Yamazaki
发明人： Yoshiaki Yamamoto , Koichiro Tanaka , Atsuo Isobe , Daisuke Ohgarane , Shunpei Yamazaki
IPC分类号： H01L21/336
CPC分类号： H01L21/6835 , H01L21/02532 , H01L21/02683 , H01L21/02691 , H01L21/84 , H01L23/544 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L27/12 , H01L29/78603 , H01L29/78648 , H01L2221/6835 , H01L2223/5442 , H01L2223/54426 , H01L2223/6677 , H01L2224/16 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2224/83191 , H01L2224/838 , H01L2224/85 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/04941 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/10253 , H01L2924/12044 , H01L2924/14 , H01L2924/15788 , H01L2924/19043 , H01L2924/30105 , H01Q1/38 , H01Q9/285 , H01Q23/00 , Y10S438/982 , H01L2924/00 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.
摘要翻译：本发明的目的是提供一种通过与专利文献1中公开的方法不同的方法从衬底分离薄膜晶体管和包括薄膜晶体管的电路或半导体器件的方法，并且将薄膜晶体管，以及电路或半导体器件到具有柔性的衬底。根据本发明，在绝缘膜上形成大的开口或多个开口，在开口处形成连接到薄膜晶体管的导电膜，并且去除剥离层，然后，将具有薄的薄膜晶体管转置到具有导电膜等的基板上。根据本发明的薄膜晶体管具有通过激光照射而结晶的半导体膜，并且防止剥离层在不被激光照射的激光照射下曝光。

22. 发明授权

US07929154B2 Laser irradiation apparatus and laser irradiation method and method for manufacturing semiconductor device 有权
标题翻译：激光照射装置及激光照射方法及半导体装置的制造方法
公开(公告)号：US07929154B2
公开(公告)日：2011-04-19
申请号：US11640394
申请日：2006-12-18
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： G01B11/14
CPC分类号： B23K26/0853 , B23K26/04 , B23K26/0738 , G03F9/7088 , H01L21/02675 , H01L21/2026
摘要： The present invention provides a laser irradiation apparatus and a laser irradiation method which can conduct irradiation of a laser beam accurately by correcting misalignment of an irradiation position of the laser beam from the predetermined position due to temperature change. A laser irradiation apparatus includes a laser oscillator emitting a laser beam; an XY stage provided with an irradiation object; an optical system which shapes the laser beam into a linear beam on a surface of the irradiation object provided on the XY stage; an illumination device which emits light to the surface of the irradiation object; and a camera for imaging reflected light of the light on the surface of the irradiation object, in which misalignment of an irradiation position of the linear beam detected from the reflected light imaged by the camera is corrected.
摘要翻译：本发明提供一种激光照射装置和激光照射方法，该激光照射装置和激光照射方法能够通过校正由于温度变化导致的来自预定位置的激光束的照射位置的偏移而精确地进行激光束的照射。激光照射装置包括发射激光束的激光振荡器; 设置有照射物体的XY台阶; 光学系统，其将激光束成形为设置在XY台上的照射物体的表面上的线性光束; 向照射物体的表面发光的照明装置; 以及用于对照射物体的表面上的光的反射光进行成像的相机，其中从由照相机成像的反射光检测到的线性光束的照射位置的未对准被校正。

23. 发明授权

US07790533B2 Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device 有权
标题翻译：激光照射方法，激光照射装置以及半导体装置的制造方法
公开(公告)号：US07790533B2
公开(公告)日：2010-09-07
申请号：US10582614
申请日：2005-06-15
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/02675 , B23K26/0604 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0665 , H01L21/02678 , H01L21/2026 , H01L21/268 , H01L27/12 , H01L27/1285 , H01L29/78675 , H01S3/2383
摘要： The present invention is to provide a technique that can increase productivity with high output power by combining a plurality of laser beams on an irradiation surface without any difficulties in optical alignment. According to this technique, laser beams having different wavelengths are combined using a plurality of laser oscillators and a dichroic mirror, or additionally a polarizer. For example, a first laser beam emitted from a first laser oscillator is combined with a second laser beam emitted from a second laser oscillator having different wavelength from the first laser beam in such a way that the first laser beam passes through a dichroic mirror and the second laser beam is reflected on the dichroic mirror, and the combined laser beam is projected to an irradiation surface.
摘要翻译：本发明是提供一种通过在照射面上组合多个激光束而能够以高输出功率提高生产率的技术，而不会使光取向困难。根据该技术，使用多个激光振荡器和分色镜或另外的偏振器来组合具有不同波长的激光束。例如，从第一激光振荡器发射的第一激光束与从第一激光束具有不同波长的第二激光振荡器发射的第二激光束组合，使得第一激光束通过二向色镜，并且第二激光束在分色镜上反射，并且将组合的激光束投射到照射表面。

24. 发明授权

US07704765B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07704765B2
公开(公告)日：2010-04-27
申请号：US11889110
申请日：2007-08-09
申请人： Junya Maruyama , Atsuo Isobe , Susumu Okazaki , Koichiro Tanaka , Yoshiaki Yamamoto , Koji Dairiki , Tomoko Tamura
发明人： Junya Maruyama , Atsuo Isobe , Susumu Okazaki , Koichiro Tanaka , Yoshiaki Yamamoto , Koji Dairiki , Tomoko Tamura
IPC分类号： H01L21/00 , H01L21/76
CPC分类号： H01L27/1266 , H01L21/6835 , H01L24/83 , H01L27/1214 , H01L27/1218 , H01L2221/6835 , H01L2221/68368 , H01L2224/83 , H01L2924/01029 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15787 , H01L2924/19041 , H01L2924/3025 , H01L2924/3512 , H01L2924/00
摘要： It is an object of the present invention to provide a method for manufacturing a semiconductor device, capable of keeping a peeling layer from being peeled from a substrate in the phase before the completion of a semiconductor element and peeling a semiconductor element rapidly. It is considered that a peeling layer tends to be peeled from a substrate because the stress is applied to a peeling layer due to the difference in thermal expansion coefficient between a substrate and a peeling layer, or because the volume of a peeling layer is reduced and thus the stress is applied thereto by crystallization of the peeling layer due to heat treatment. Therefore, according to one feature of the invention, the adhesion of a substrate and a peeling layer is enhanced by forming an insulating film (buffer film) for relieving the stress on the peeling layer between the substrate and the peeling layer before forming the peeling layer over the substrate.
摘要翻译：本发明的目的是提供一种制造半导体器件的方法，该半导体器件的制造方法能够在半导体元件完成之前相位保持剥离层从基板剥离并快速剥离半导体元件。由于衬底和剥离层之间的热膨胀系数的差异，或者由于剥离层的体积减小，由于将剥离层施加到剥离层上，因此认为剥离层倾向于剥离，因此通过热处理使剥离层结晶而施加应力。因此，根据本发明的一个特征，通过在形成剥离层之前形成用于缓解基板和剥离层之间的剥离层上的应力的绝缘膜（缓冲膜），增强了基板和剥离层的粘附性在基板上。

25. 发明授权

US07615424B2 Laser irradiation apparatus and method for manufacturing semiconductor device using the laser irradiation apparatus 有权
标题翻译：激光照射装置及使用该激光照射装置的半导体装置的制造方法
公开(公告)号：US07615424B2
公开(公告)日：2009-11-10
申请号：US11087843
申请日：2005-03-24
申请人： Koichiro Tanaka , Yoshiaki Yamamoto , Nami Kosaka
发明人： Koichiro Tanaka , Yoshiaki Yamamoto , Nami Kosaka
IPC分类号： H01L21/00 , H01L21/84 , H01L31/036
CPC分类号： B23K26/04 , B23K26/0736 , B23K26/0853 , G02B27/0944 , H01L27/3244
摘要： An object of the present invention is to provide a laser irradiation method being able to control the irradiation position of the laser beam accurately compared with the conventional irradiation method. Another object of the present invention is to provide a method for manufacturing a semiconductor device with the use of the laser irradiation method being able to irradiate a large substrate accurately with the laser beam.The irradiation position of the laser beam is controlled by using a laser oscillator emitting a laser beam, an optical system for shaping the laser beam into rectangular on the irradiation object, means for moving the irradiation object relative to the laser beam in the long-side direction and the short-side direction of the beam spot, means for moving the irradiation object more slowly in the long-side direction than in the short-side direction, and a laser positioning mechanism.
摘要翻译：本发明的目的是提供一种能够与传统的照射方法相比准确地控制激光束的照射位置的激光照射方法。本发明的另一个目的是提供一种使用激光照射方法制造半导体器件的方法，该方法能够用激光束精确地照射大的衬底。激光束的照射位置通过使用发射激光束的激光振荡器，用于将激光束成形为照射对象上的矩形的光学系统来控制，用于使照射对象相对于激光束在长边移动的装置光束点的方向和短边方向，用于使照射物体在长边方向上比在短边方向上更慢地移动的装置，以及激光定位机构。

26. 发明授权

US07585791B2 Laser irradiation method, laser irradiation apparatus and method for manufacturing semiconductor device 有权
标题翻译：激光照射方法，激光照射装置以及半导体装置的制造方法
公开(公告)号：US07585791B2
公开(公告)日：2009-09-08
申请号：US10584729
申请日：2005-10-18
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： H01L21/00 , C30B13/00
CPC分类号： H01L21/02683 , B23K26/0736 , B23K26/0738 , B23K26/0853 , H01L21/02422 , H01L21/02532 , H01L21/02686 , H01L21/2026 , H01L21/268 , H01L27/1255 , H01L27/1266 , H01L27/1285 , H01L27/1296 , H01L29/78621 , H01L29/78648 , Y10T117/1076
摘要： In conducting laser annealing using a CW laser or a quasi-CW laser, productivity is not high as compared with an excimer laser and thus, it is necessary to further enhance productivity. According to the present invention, a fundamental wave is used without putting laser light into a non linear optical element, and laser annealing is conducted by irradiating a semiconductor thin film with pulsed laser light having a high repetition rate. A laser oscillator having a high output power can be used for laser annealing, since a non linear optical element is not used and thus light is not converted to a harmonic. Therefore, the width of a region having large grain crystals that is formed by scanning once can be increased, and thus the productivity can be enhanced dramatically.
摘要翻译：在使用CW激光或准CW激光进行激光退火时，与准分子激光相比，生产率不高，因此有必要进一步提高生产率。根据本发明，使用基波而不将激光投射到非线性光学元件中，并且通过用具有高重复率的脉冲激光照射半导体薄膜来进行激光退火。具有高输出功率的激光振荡器可用于激光退火，因为不使用非线性光学元件，因此光不转换成谐波。因此，可以增加通过扫描一次形成的具有大晶粒的区域的宽度，从而可以显着提高生产率。

27. 发明授权

US07566669B2 Laser irradiation apparatus and laser irradiation method 有权
标题翻译：激光照射装置和激光照射方法
公开(公告)号：US07566669B2
公开(公告)日：2009-07-28
申请号：US10584472
申请日：2005-06-15
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： H01L21/00 , C30B1/00 , B23K26/00
CPC分类号： H01L21/02691 , H01L21/02675 , H01L21/2026 , H01L21/268 , H01L27/1285
摘要： It is an object of the present invention to provide a laser irradiation apparatus which can manufacture a homogenously crystallized film by varying the energy intensity of an irradiation beam in forward and backward directions of the irradiation. A laser irradiation apparatus of the present invention comprises a laser oscillator and means for varying beam intensity wherein a laser beam is obliquely incident into the irradiation surface, the laser beam is scanned relative to the irradiation surface, and the beam intensity is varied in accordance with the scanning direction. Further, the laser oscillator is a continuous wave solid-state laser, gas laser, or metal laser. A pulsed laser having a repetition frequency of 10 MHz or more can also be used.
摘要翻译：本发明的目的是提供一种能够通过改变照射光束在照射的前后方向上的能量强度来制造均质结晶膜的激光照射装置。本发明的激光照射装置包括激光振荡器和用于改变光束强度的装置，其中激光束倾斜地入射到照射表面中，激光束相对于照射表面被扫描，并且光束强度根据扫描方向。此外，激光振荡器是连续波固体激光器，气体激光器或金属激光器。也可以使用重复频率为10MHz以上的脉冲激光。

28. 发明授权

US07393764B2 Laser treatment apparatus, laser treatment method, and manufacturing method of semiconductor device 有权
标题翻译：激光治疗装置，激光治疗方法及半导体装置的制造方法
公开(公告)号：US07393764B2
公开(公告)日：2008-07-01
申请号：US11274272
申请日：2005-11-16
申请人： Koichiro Tanaka , Yoshiaki Yamamoto , Takatsugu Omata
发明人： Koichiro Tanaka , Yoshiaki Yamamoto , Takatsugu Omata
IPC分类号： H01L21/20
CPC分类号： H01L21/02683 , B23K26/0853 , B23K2101/40 , H01L21/02686 , H01L21/2026 , H01L27/1285
摘要： The invention relates to a laser treatment apparatus including a laser oscillator, an interlock provided in the laser oscillator, a movable table which moves with a certain movement period, a timer, an interlock provided in the timer, a sensor which can detect movement of the movable table, and a computer, in which the timer starts measuring time when the sensor senses passage of the movable table, and when the movable table does not pass the sensor even after the movement period, conduction between contacts of the interlock provided in the timer is blocked to operate the interlock in the laser oscillator, thereby stopping laser output. The invention also relates to a laser treatment method using the laser treatment apparatus.
摘要翻译：本发明涉及一种激光治疗装置，包括激光振荡器，设置在激光振荡器中的联锁装置，以一定运动周期移动的可移动工作台，定时器，定时器中设置的互锁装置，能够检测活动台和计算机，其中定时器开始测量时间，当传感器感测到可移动台的通过时，并且当移动台甚至在移动时段之后也不通过传感器时，设置在定时器中的互锁装置的触点之间的传导被阻止在激光振荡器中操作互锁，从而停止激光输出。本发明还涉及使用激光治疗装置的激光治疗方法。

29. 发明申请

US20080151262A1 Light Exposure Apparatus and Manufacturing Method of Semiconductor Device Using the Same 失效
标题翻译：曝光装置及使用其的半导体装置的制造方法
公开(公告)号：US20080151262A1
公开(公告)日：2008-06-26
申请号：US10582616
申请日：2005-12-21
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： G01B11/30 , H01L21/027
CPC分类号： H01L21/02675 , G03F7/70383 , H01L21/2026 , H01L21/268 , H01L27/1266 , H01L27/1285 , Y10T29/41
摘要： When annealing of a semiconductor film is conducted using a plurality of lasers, each of the distances between laser irradiation regions is different. When a lithography step is conducted in accordance with a marker which is formed over a substrate in advance after the step, light-exposure is not correctly conducted to a portion crystallized by laser. By using a laser irradiation region obtained on a laser irradiation step as a marker, light-exposure is conducted by making a light-exposure position of a stepper coincide with a large grain size region in the laser irradiation region. A large grain size region and a poorly crystalline region are detected by utilizing a thing that scattering intensity of light is different between the large grain size region and the poorly crystalline region, thereby determining a light-exposure position.
摘要翻译：当使用多个激光器进行半导体膜的退火时，激光照射区域之间的距离各不相同。当根据在步骤之后预先在衬底上形成的标记进行光刻步骤时，曝光不能正确地传导到通过激光结晶的部分。通过使用在激光照射步骤中获得的激光照射区域作为标记，通过使激光照射区域中的步进曝光位置与大粒径区域一致来进行曝光。通过利用在大晶粒尺寸区域和不良结晶区域之间的散射光强度不同的物质来检测大晶粒尺寸区域和不良结晶区域，从而确定曝光位置。

30. 发明授权

US07282380B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US07282380B2
公开(公告)日：2007-10-16
申请号：US11079262
申请日：2005-03-15
申请人： Junya Maruyama , Atsuo Isobe , Susumu Okazaki , Koichiro Tanaka , Yoshiaki Yamamoto , Koji Dairiki , Tomoko Tamura
发明人： Junya Maruyama , Atsuo Isobe , Susumu Okazaki , Koichiro Tanaka , Yoshiaki Yamamoto , Koji Dairiki , Tomoko Tamura
IPC分类号： H01L21/00 , H01L21/76
CPC分类号： H01L27/1266 , H01L21/6835 , H01L24/83 , H01L27/1214 , H01L27/1218 , H01L2221/6835 , H01L2221/68368 , H01L2224/83 , H01L2924/01029 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15787 , H01L2924/19041 , H01L2924/3025 , H01L2924/3512 , H01L2924/00
摘要： It is an object of the present invention to provide a method for manufacturing a semiconductor device, capable of keeping a peeling layer from being peeled from a substrate in the phase before the completion of a semiconductor element and peeling a semiconductor element rapidly. It is considered that a peeling layer tends to be peeled from a substrate because the stress is applied to a peeling layer due to the difference in thermal expansion coefficient between a substrate and a peeling layer, or because the volume of a peeling layer is reduced and thus the stress is applied thereto by crystallization of the peeling layer due to heat treatment. Therefore, according to one feature of the invention, the adhesion of a substrate and a peeling layer is enhanced by forming an insulating film (buffer film) for relieving the stress on the peeling layer between the substrate and the peeling layer before forming the peeling layer over the substrate.

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