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21. 发明申请

US20120267686A1 Nitride semiconductor device and manufacturing method thereof 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20120267686A1
公开(公告)日：2012-10-25
申请号：US13137291
申请日：2011-08-03
申请人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park
发明人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park
IPC分类号： H01L29/778 , H01L21/338
CPC分类号： H01L29/66431 , H01L29/2003 , H01L29/404 , H01L29/42316 , H01L29/66462 , H01L29/7787
摘要： Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode spaced apart from the drain electrode, in Schottky contact with the nitride semiconductor layer, and having an ohmic pattern in ohmic contact with the nitride semiconductor layer inside; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and a gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof.
摘要翻译：提供一种氮化物半导体器件，其包括：氮化物半导体层，其在氮化物半导体内部具有二维电子气体（2DEG）通道的衬底上; 与氮化物半导体层欧姆接触的漏电极; 源极与漏极间隔开，与氮化物半导体层肖特基接触，并且具有与内部的氮化物半导体层欧姆接触的欧姆图案; 形成在所述氮化物半导体层上的所述漏电极和所述源电极之间以及所述源电极的至少一部分上的电介质层; 以及设置在所述电介质层上以与所述漏极间隔开的栅电极，其中所述栅电极的一部分形成在所述源电极的漏极侧边缘部分之间，并且介电层插入其间;以及其制造方法。

22. 发明授权

US08860087B2 Nitride semiconductor device and manufacturing method thereof 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US08860087B2
公开(公告)日：2014-10-14
申请号：US13442494
申请日：2012-04-09
申请人： Young Hwan Park , Woo Chul Jeon , Ki Yeol Park , Seok Yoon Hong
发明人： Young Hwan Park , Woo Chul Jeon , Ki Yeol Park , Seok Yoon Hong
IPC分类号： H01L29/66 , H01L29/778 , H01L29/417 , H01L29/423 , H01L29/20
CPC分类号： H01L29/41725 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/7787
摘要： The present invention relates to a nitride semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a nitride semiconductor device including: a nitride semiconductor layer having a 2DEG channel; a source electrode in ohmic contact with the nitride semiconductor layer; a drain electrode in ohmic contact with the nitride semiconductor layer; a plurality of p-type nitride semiconductor segments formed on the nitride semiconductor layer and each formed lengthways from a first sidewall thereof, which is spaced apart from the source electrode, to a drain side; and a gate electrode formed to be close to the source electrode and in contact with the nitride semiconductor layer between the plurality of p-type semiconductor segments and portions of the p-type semiconductor segments extending in the direction of a source-side sidewall of the gate electrode aligned with the first sidewalls of the p-type nitride semiconductor segments is provided.
摘要翻译：本发明涉及一种氮化物半导体器件及其制造方法。根据本发明的一个方面，一种氮化物半导体器件包括：具有2DEG通道的氮化物半导体层; 与氮化物半导体层欧姆接触的源电极; 与氮化物半导体层欧姆接触的漏电极; 多个p型氮化物半导体段形成在氮化物半导体层上，并且每个从源极电极间隔开的第一侧壁纵向形成到漏极侧; 以及栅电极，其形成为靠近所述源电极并且与所述多个p型半导体区段之间的所述氮化物半导体层和所述p型半导体区段的沿所述源极侧侧壁的方向延伸的部分接触提供了与p型氮化物半导体段的第一侧壁对准的栅电极。

23. 发明申请

US20130009165A1 NITRIDE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME AND NITRIDE SEMICONDUCTOR POWER DEVICE 审中-公开
标题翻译：氮化物半导体器件，其制造方法和氮化物半导体器件
公开(公告)号：US20130009165A1
公开(公告)日：2013-01-10
申请号：US13470807
申请日：2012-05-14
申请人： Young Hwan Park , Ki Yeol Park , Woo Chul Jeon
发明人： Young Hwan Park , Ki Yeol Park , Woo Chul Jeon
IPC分类号： H01L29/778 , H01L21/335 , H01L27/06
CPC分类号： H01L29/7787 , H01L21/8252 , H01L27/0605 , H01L27/0629 , H01L27/0883 , H01L29/0692 , H01L29/2003 , H01L29/66462 , H01L29/872
摘要： Disclosed herein are a nitride semiconductor device, a method for manufacturing the same, and a nitride semiconductor power device. According to an exemplary embodiment of the present invention, a nitride semiconductor device includes: a nitride semiconductor layer over a substrate wherein the nitride semiconductor layer has a two-dimensional electron gas (2DEG) channel formed therein; a D-mode FET that includes a gate electrode Schottky-contacting with the nitride semiconductor layer to form a normally-on operating depletion-mode (D-mode) HEMT structure; and a Schottky diode part that includes an anode electrode Schottky-contacting with the nitride semiconductor layer and increases a gate driving voltage of the D-mode FET, the anode electrode being connected to the gate electrode of the D-mode FET. In addition, the nitride semiconductor power device and the method for manufacturing a nitride semiconductor device are proposed.
摘要翻译：本文公开了氮化物半导体器件，其制造方法和氮化物半导体功率器件。根据本发明的示例性实施例，氮化物半导体器件包括：氮化物半导体层，其上形成有氮化物半导体层，其中形成有二维电子气（2DEG）沟道; D型FET，其包括与氮化物半导体层肖特基接触以形成正常工作耗尽型（D模式）HEMT结构的栅电极; 以及肖特基二极管部分，其包括与氮化物半导体层肖特基接触的阳极并增加D模式FET的栅极驱动电压，阳极电极连接到D型FET的栅电极。另外，提出了氮化物半导体功率器件和氮化物半导体器件的制造方法。

24. 发明申请

US20120267687A1 Nitride semiconductor device and manufacturing method thereof 审中-公开
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20120267687A1
公开(公告)日：2012-10-25
申请号：US13137312
申请日：2011-08-04
申请人： Woo Chul Jeon , Young Hwan Park , Ki Yeol Park
发明人： Woo Chul Jeon , Young Hwan Park , Ki Yeol Park
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/402 , H01L29/42316 , H01L29/66462
摘要： Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode in Schottky contact with the nitride semiconductor layer wherein the source electrode is spaced apart from the drain electrode; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode, wherein the dielectric layer has a recess formed between the drain electrode and the source electrode; and a gate electrode formed on the dielectric layer and in the recess to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof.
摘要翻译：提供一种氮化物半导体器件，其包括：氮化物半导体层，其在氮化物半导体内部具有二维电子气体（2DEG）通道的衬底上; 与氮化物半导体层欧姆接触的漏电极; 与氮化物半导体层肖特基接触的源电极，其中源电极与漏电极间隔开; 在所述氮化物半导体层上形成在所述漏电极和所述源电极之间以及所述源电极的至少一部分上的电介质层，其中所述电介质层具有形成在所述漏电极和所述源电极之间的凹部; 以及形成在所述电介质层上和所述凹部中以与所述漏电极间隔开的栅电极，其中所述栅电极的一部分形成在所述源电极的漏极侧边缘部分上，其间插入有所述电介质层，以及其制造方法。

25. 发明授权

US08896026B2 Semicondutor device 有权
标题翻译：半导体器件
公开(公告)号：US08896026B2
公开(公告)日：2014-11-25
申请号：US13137311
申请日：2011-08-04
申请人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park
发明人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park
IPC分类号： H01L31/072 , H01L31/109
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/402 , H01L29/42368 , H01L29/42376 , H01L29/475 , H01L29/66462
摘要： Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode in Schottky contact with the nitride semiconductor layer wherein the source electrode is spaced apart from the drain electrode; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and a gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof.
摘要翻译：提供一种氮化物半导体器件，其包括：氮化物半导体层，其在氮化物半导体内部具有二维电子气体（2DEG）通道的衬底上; 与氮化物半导体层欧姆接触的漏电极; 与氮化物半导体层肖特基接触的源电极，其中源电极与漏电极间隔开; 形成在所述氮化物半导体层上的所述漏电极和所述源电极之间以及所述源电极的至少一部分上的电介质层; 以及设置在所述电介质层上以与所述漏极间隔开的栅电极，其中所述栅电极的一部分形成在所述源电极的漏极侧边缘部分之间，并且介电层插入其间;以及其制造方法。

26. 发明授权

US08841704B2 Nitride based semiconductor device and manufacturing method thereof 有权
标题翻译：氮化物基半导体器件及其制造方法
公开(公告)号：US08841704B2
公开(公告)日：2014-09-23
申请号：US13406123
申请日：2012-02-27
申请人： Young Hwan Park , Woo Chul Jeon , Ki Yeol Park , Seok Yoon Hong
发明人： Young Hwan Park , Woo Chul Jeon , Ki Yeol Park , Seok Yoon Hong
IPC分类号： H01L29/66
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/7787
摘要： Disclosed herein is a nitride based semiconductor device, including: a substrate; a nitride based semiconductor layer having a lower nitride based semiconductor layer and an upper nitride based semiconductor layer on the substrate; an isolation area including an interface between the lower nitride based semiconductor layer and the upper nitride based semiconductor layer; and drain electrodes, source electrode, and gate electrodes formed on the upper nitride based semiconductor layer. According to preferred embodiments of the present invention, in the nitride based semiconductor device, by using the isolation area including the interface between the lower nitride based semiconductor layer and the upper nitride based semiconductor layer, problems of parasitic capacitance and leakage current are solved, and as a result, a switching speed can be improved through a gate pad.
摘要翻译：本文公开了一种氮化物基半导体器件，包括：衬底; 在衬底上具有下氮化物基半导体层和上部氮化物基半导体层的氮化物基半导体层; 隔离区域，包括下部氮化物基半导体层和上部氮化物基半导体层之间的界面; 以及形成在上部氮化物基半导体层上的漏电极，源电极和栅电极。根据本发明的优选实施例，在基于氮化物的半导体器件中，通过使用包括下部氮化物基半导体层和上部氮化物类半导体层之间的界面的隔离区域，解决寄生电容和漏电流的问题，结果，可以通过栅极焊盘改善切换速度。

27. 发明授权

US08716754B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US08716754B2
公开(公告)日：2014-05-06
申请号：US13429148
申请日：2012-03-23
申请人： Young Hwan Park , Woo Chul Jeon , Ki Yeol Park , Seok Yoon Hong
发明人： Young Hwan Park , Woo Chul Jeon , Ki Yeol Park , Seok Yoon Hong
IPC分类号： H01L31/072
CPC分类号： H01L29/42316 , H01L29/1066 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： The present invention relates to a nitride semiconductor device One aspect of the present invention provides a nitride semiconductor device including: a nitride semiconductor layer having a 2DEG channel; a source electrode in ohmic contact with the nitride semiconductor layer; a drain electrode in ohmic contact with the nitride semiconductor layer; a p-type nitride layer formed on the nitride semiconductor layer between the source and drain electrodes; an n-type nitride layer formed on the p-type nitride layer; and a gate electrode formed between the source and drain electrodes to be close to the source electrode and in contact with the n-type nitride layer so that a source-side sidewall thereof is aligned with source-side sidewalls of the p-type and n-type nitride layers.
摘要翻译：本发明涉及氮化物半导体器件本发明的一个方面提供一种氮化物半导体器件，其包括：具有2DEG通道的氮化物半导体层; 与氮化物半导体层欧姆接触的源电极; 与氮化物半导体层欧姆接触的漏电极; 形成在所述源极和漏极之间的所述氮化物半导体层上的p型氮化物层; 形成在p型氮化物层上的n型氮化物层; 以及形成在源电极和漏电极之间的栅电极，以接近源电极并与n型氮化物层接触，使得源侧侧壁与p型和n型源极侧的侧壁对准型氮化物层。

28. 发明申请

US20130146888A1 MONOLITHIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：单片半导体器件及其制造方法
公开(公告)号：US20130146888A1
公开(公告)日：2013-06-13
申请号：US13402692
申请日：2012-02-22
申请人： Young Hwan Park , Woo Chul Jeon , Ki Yeol Park , Seok Yoon Hong
发明人： Young Hwan Park , Woo Chul Jeon , Ki Yeol Park , Seok Yoon Hong
IPC分类号： H01L29/10
CPC分类号： H01L27/088 , H01L21/8258 , H01L27/0605 , H01L29/267 , H01L29/778 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a monolithic semiconductor device including: a substrate; a high electron mobility transistor (HEMT) structure that is a first device structure formed on the substrate; and a laterally diffused metal oxide field effect transistor (LDMOSFET) structure that is a second device structure formed to be connected with the HEMT structure on the substrate.The monolithic semiconductor device according to preferred embodiments of the present invention is a device having characteristics of a normally-off device while maintaining high current characteristics in a normally-on state, thereby improving high current and high voltage operation characteristics.
摘要翻译：本文公开了一种单片半导体器件，包括：衬底; 作为形成在基板上的第一器件结构的高电子迁移率晶体管（HEMT）结构; 以及横向扩散的金属氧化物场效应晶体管（LDMOSFET）结构，其是形成为与衬底上的HEMT结构连接的第二器件结构。根据本发明的优选实施例的单片半导体器件是具有常闭设备，同时在常开状态下保持高电流特性，从而改善高电流和高电压操作特性。

29. 发明授权

US08384130B2 Nitride semiconductor device having a two-dimensional electron gas (2DEG) channel 有权
标题翻译：具有二维电子气（2DEG）通道的氮化物半导体器件
公开(公告)号：US08384130B2
公开(公告)日：2013-02-26
申请号：US13137291
申请日：2011-08-03
申请人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park
发明人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park
IPC分类号： H01L29/739 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/66431 , H01L29/2003 , H01L29/404 , H01L29/42316 , H01L29/66462 , H01L29/7787
摘要： Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode spaced apart from the drain electrode, in Schottky contact with the nitride semiconductor layer, and having an ohmic pattern in ohmic contact with the nitride semiconductor layer inside; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and a gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof.
摘要翻译：提供一种氮化物半导体器件，其包括：氮化物半导体层，其在氮化物半导体内部具有二维电子气体（2DEG）通道的衬底上; 与氮化物半导体层欧姆接触的漏电极; 源极与漏极间隔开，与氮化物半导体层肖特基接触，并且具有与内部的氮化物半导体层欧姆接触的欧姆图案; 形成在所述氮化物半导体层上的所述漏电极和所述源电极之间以及所述源电极的至少一部分上的电介质层; 以及设置在所述电介质层上以与所述漏极间隔开的栅电极，其中所述栅电极的一部分形成在所述源电极的漏极侧边缘部分之间，并且介电层插入其间;以及其制造方法。

30. 发明申请

US20120267637A1 Nitride semiconductor device and manufacturing method thereof 审中-公开
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20120267637A1
公开(公告)日：2012-10-25
申请号：US13137310
申请日：2011-08-04
申请人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park
发明人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park
IPC分类号： H01L29/12 , H01L29/778 , H01L21/335
CPC分类号： H01L29/7787 , H01L29/0607 , H01L29/2003 , H01L29/402 , H01L29/42376 , H01L29/66462
摘要： Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode in Schottky contact with the nitride semiconductor layer wherein the source electrode is spaced apart from the drain electrode; a floating guard ring in Schottky contact with the nitride semiconductor layer between the drain electrode and the source electrode; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode wherein the dielectric layer is applied to the floating guard ring between the drain electrode and the source electrode; and a gate electrode formed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof.
摘要翻译：提供一种氮化物半导体器件，其包括：氮化物半导体层，其在氮化物半导体内部具有二维电子气体（2DEG）通道的衬底上; 与氮化物半导体层欧姆接触的漏电极; 与氮化物半导体层肖特基接触的源电极，其中源电极与漏电极间隔开; 与漏电极和源电极之间的氮化物半导体层肖特基接触的浮动保护环; 形成在所述氮化物半导体层上的所述漏电极和所述源电极之间以及所述源电极的至少一部分上的所述电介质层，其中所述电介质层被施加到所述漏电极和所述源电极之间的所述浮动保护环; 以及形成在与所述漏电极间隔开的所述电介质层上的栅电极，其中，所述栅电极的一部分形成在所述源电极的漏极侧边缘部分之间，并且所述栅电极的制造方法。

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