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    • 21. 发明申请
    • Battery-capacity supervisory control device and method thereof
    • 电池容量监控装置及其方法
    • US20100153037A1
    • 2010-06-17
    • US12316483
    • 2008-12-12
    • Michael Liu
    • Michael Liu
    • G01R31/36
    • G01R31/362
    • A battery-capacity supervisory control device includes a DC current/DC voltage detecting loop, a microprocessor and a display unit. The DC current/DC voltage detecting loop is connected between a battery and a power inverter for detecting a first voltage value before the battery electrically discharges, and a second voltage value as well as an output current value of the battery after electrically discharging for a time unit of the battery, to calculate the available capacity of the battery and to calculate the available time of the battery under loading according to the available capacity of the battery through the microprocessor. The display simultaneously displays the available time of the battery under loading and the available capacity of the battery. Therefore, a user effectively supervises and assures the battery is in the usable state.
    • 电池容量监控装置包括DC电流/ DC电压检测回路,微处理器和显示单元。 直流电流/直流电压检测回路连接在电池和电力逆变器之间,用于检测在电池放电之前的第一电压值,以及第二电压值以及在放电一段时间后的电池的输出电流值 计算电池的可用容量,并根据电池通过微处理器的可用容量计算负载下电池的可用时间。 显示屏同时显示电池正在加载的可用时间和电池的可用容量。 因此,用户有效地监督并确保电池处于可用状态。
    • 24. 发明授权
    • Proton and heavy ion SEU resistant SRAM
    • 质子和重离子SEU抗性SRAM
    • US07200031B2
    • 2007-04-03
    • US11082161
    • 2005-03-16
    • Michael LiuHarry Liu
    • Michael LiuHarry Liu
    • G11C11/00
    • G11C11/4125
    • A method and system is disclosed for reducing proton and heavy ion SEU sensitivity of a static random access memory (SRAM) cell. A first passive delay element has been inserted in series with an active delay element in a first feedback path of the SRAM cell, and a second passive delay element has been inserted in a second feedback path of the SRAM cell. The passive delay elements reduce the proton SEU sensitivity of the SRAM cell, and the active delay element reduces the heavy ion sensitivity of the SRAM cell. The passive delay elements also protect the SRAM cell against SEUs that may occur when the SRAM cell is in dynamic mode.
    • 公开了用于降低静态随机存取存储器(SRAM)单元的质子和重离子SEU灵敏度的方法和系统。 第一被动延迟元件已经与SRAM单元的第一反馈路径中的有源延迟元件串联插入,并且第二被动延迟元件已经插入到SRAM单元的第二反馈路径中。 被动延迟元件降低了SRAM单元的质子SEU灵敏度,并且主动延迟元件降低了SRAM单元的重离子灵敏度。 被动延迟元件还保护SRAM单元免受当SRAM单元处于动态模式时可能发生的SEU。