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22. 发明申请

US20070018162A1 Thin film transistor substrate and manufacturing method thereof 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US20070018162A1
公开(公告)日：2007-01-25
申请号：US11491013
申请日：2006-07-21
申请人： Keun-kyu Song , Young-min Kim , Tae-young Choi
发明人： Keun-kyu Song , Young-min Kim , Tae-young Choi
IPC分类号： H01L29/04
CPC分类号： H01L51/0533 , H01L51/0545
摘要： Embodiments of the invention provide a thin film transistor substrate, comprising: an insulating substrate; a gate wire formed on the insulating substrate; a first gate insulating layer made of an inorganic material, formed on the gate wire and having a first insulating layer contact hole for exposing at least a part of the gate wire; a second gate insulating layer made of an organic material, formed on the first gate insulating film and having a second insulating layer contact hole corresponding to the first insulating layer contact hole; a source electrode and a drain electrode formed on the second gate insulating layer and being aparted from each other to be defining a channel area; and an organic semiconductor layer formed on the channel area. Accordingly, the present invention provides an organic TFT substrate in which a characteristic of a TFT is improved.
摘要翻译：本发明的实施例提供一种薄膜晶体管衬底，包括：绝缘衬底; 形成在所述绝缘基板上的栅极线; 由无机材料制成的第一栅极绝缘层，形成在栅极线上并具有用于暴露栅极线的至少一部分的第一绝缘层接触孔; 形成在所述第一栅极绝缘膜上并且具有与所述第一绝缘层接触孔对应的第二绝缘层接触孔的由有机材料制成的第二栅极绝缘层; 源电极和漏电极，形成在第二栅极绝缘层上并且彼此分开以限定沟道区; 以及形成在沟道区上的有机半导体层。因此，本发明提供了TFT的特性提高的有机TFT基板。

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